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Journal Articles

Novel surface wave technique for moderate-pressure plasma measurements

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Shadhin Hussain, Matthew Goeckner
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 034005 (2024)
https://doi.org/10.1116/6.0003331
Published: April 2024
View articletitled, Novel surface wave technique for moderate-pressure plasma measurements
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Journal Articles

Dependence of mode transition points and hysteresis upon plasma pressure in a re-entrant configuration of inductively coupled plasma

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Jian Wang, Jin-xiang Cao, Xiao Zhang, Yin-chang Du, Zhe Zheng, Yu Liu, Liang Xu, Pi Wang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 022601 (2015)
https://doi.org/10.1116/1.4908170
Published: February 2015
View articletitled, Dependence of mode transition points and hysteresis upon plasma pressure in a re-entrant configuration of inductively coupled plasma
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Journal Articles

Doped semiconductors with band-edge plasma frequencies

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Stephanie Law, Runyu Liu, Daniel Wasserman
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 052601 (2014)
https://doi.org/10.1116/1.4891170
Published: July 2014
View articletitled, Doped semiconductors with band-edge plasma frequencies
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Journal Articles

Epitaxial growth of engineered metals for mid-infrared plasmonics

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Stephanie Law, Lan Yu, Daniel Wasserman
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 31, 03C121 (2013)
https://doi.org/10.1116/1.4797487
Published: March 2013
View articletitled, Epitaxial growth of engineered metals for mid-infrared plasmonics
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Journal Articles

High-aspect-ratio deep Si etching in SF 6 / O 2 plasma. II. Mechanism of lateral etching in high-aspect-ratio features

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Takahiro Maruyama, Takeshi Narukage, Ryota Onuki, Nobuo Fujiwara
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, 862–868 (2010)
https://doi.org/10.1116/1.3466884
Published: July 2010
View articletitled, High-aspect-ratio deep Si etching in SF 6 / O 2 plasma. II. Mechanism of lateral etching in high-aspect-ratio features
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Journal Articles

Optical properties of n -doped Ga 1 − x Mn x N epitaxial layers grown by metal-organic chemical-vapor deposition in mid and far ( 5 − 50   μ m ) IR range

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A. B. Weerasekara, Z. G. Hu, N. Dietz, A. G. U. Perera, A. Asghar, M. H. Kane, M. Strassburg, I. T. Ferguson
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 52–55 (2008)
https://doi.org/10.1116/1.2819259
Published: January 2008
View articletitled, Optical properties of n -doped Ga 1 − x Mn x N epitaxial layers grown by metal-organic chemical-vapor deposition in mid and far ( 5 − 50   μ m ) IR range
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Journal Articles

Mechanisms of porous dielectric film modification induced by reducing and oxidizing ash plasmas

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N. Posseme, T. Chevolleau, T. David, M. Darnon, O. Louveau, O. Joubert
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 25, 1928–1940 (2007)
https://doi.org/10.1116/1.2804615
Published: December 2007
View articletitled, Mechanisms of porous dielectric film modification induced by reducing and oxidizing ash plasmas
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Journal Articles

Deposition of sacrificial silicon oxide layers by electron cyclotron resonance plasma

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C. Biasotto, A. M. Daltrini, R. C. Teixeira, F. A. Boscoli, J. A. Diniz, S. A. Moshkalev, I. Doi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 25, 1166–1170 (2007)
https://doi.org/10.1116/1.2746331
Published: June 2007
View articletitled, Deposition of sacrificial silicon oxide layers by electron cyclotron resonance plasma
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Journal Articles

In situ spectroscopic ellipsometry to monitor surface plasmon resonant group-III metals deposited by molecular beam epitaxy

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Pae C Wu, Maria Losurdo, Tong-Ho Kim, Soojeong Choi, Giovanni Bruno, April S. Brown
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 25, 1019–1023 (2007)
https://doi.org/10.1116/1.2734163
Published: May 2007
View articletitled, In situ spectroscopic ellipsometry to monitor surface plasmon resonant group-III metals deposited by molecular beam epitaxy
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Journal Articles

Towards nondestructive carrier depth profiling

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T. Clarysse, W. Vandervorst, M. Bakshi, L. Nicolaides, A. Salnik, J. Opsal
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 24, 1139–1146 (2006)
https://doi.org/10.1116/1.2190655
Published: April 2006
View articletitled, Towards nondestructive carrier depth profiling
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Journal Articles

Progress in the physical modeling of carrier illumination

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Fabian Dortu, Trudo Clarysse, Roger Loo, Bartek Pawlak, Romain Delhougne, Wilfried Vandervorst
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 24, 1131–1138 (2006)
https://doi.org/10.1116/1.2190654
Published: April 2006
View articletitled, Progress in the physical modeling of carrier illumination
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Journal Articles

Morphology control of silicon nanotips fabricated by electron cyclotron resonance plasma etching

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C. H. Hsu, Y. F. Huang, L. C. Chen, S. Chattopadhyay, K. H. Chen, H. C. Lo, C. F. Chen
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 24, 308–311 (2006)
https://doi.org/10.1116/1.2163894
Published: January 2006
View articletitled, Morphology control of silicon nanotips fabricated by electron cyclotron resonance plasma etching
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Journal Articles

Reduction of oxide layer on Ru surface by atomic-hydrogen treatment

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I. Nishiyama, H. Oizumi, K. Motai, A. Izumi, T. Ueno, H. Akiyama, A. Namiki
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 23, 3129–3131 (2005)
https://doi.org/10.1116/1.2130356
Published: December 2005
View articletitled, Reduction of oxide layer on Ru surface by atomic-hydrogen treatment
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Journal Articles

Metal etching with organic based plasmas. II. CO ∕ NH 3 plasmas

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A. S. Orland, R. Blumenthal
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 23, 1597–1602 (2005)
https://doi.org/10.1116/1.1935531
Published: July 2005
View articletitled, Metal etching with organic based plasmas. II. CO ∕ NH 3 plasmas
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Journal Articles

MOS-diode characteristics of ultrathin Al 2 O 3 gate dielectrics after exposure to an electron-cyclotron-resonance plasma stream

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Yoshito Jin, Kunio Saito, Masaru Shimada, Toshiro Ono
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 23, 1480–1486 (2005)
https://doi.org/10.1116/1.1941250
Published: July 2005
View articletitled, MOS-diode characteristics of ultrathin Al 2 O 3 gate dielectrics after exposure to an electron-cyclotron-resonance plasma stream
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Journal Articles

Study of neutral-beam etching conditions for the fabrication of 7-nm-diameter nanocolumn structures using ferritin iron-core masks

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Tomohiro Kubota, Tomohiro Baba, Hiroyuki Kawashima, Yukiharu Uraoka, Takashi Fuyuki, Ichiro Yamashita, Seiji Samukawa
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 23, 534–539 (2005)
https://doi.org/10.1116/1.1880232
Published: March 2005
View articletitled, Study of neutral-beam etching conditions for the fabrication of 7-nm-diameter nanocolumn structures using ferritin iron-core masks
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Journal Articles

Nanostructures produced by ultraviolet laser irradiation of silicon. I. Rippled structures

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A. J. Pedraza, Y. F. Guan, J. D. Fowlkes, D. A. Smith
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 22, 2823–2835 (2004)
https://doi.org/10.1116/1.1821575
Published: November 2004
View articletitled, Nanostructures produced by ultraviolet laser irradiation of silicon. I. Rippled structures
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Journal Articles

Real time spectroscopic ellipsometry study during the growth of nanocrystalline nitride protective coatings

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S. M. Aouadi, M. Debessai, R. Tomek, T. Maeruf
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 22, 1822–1829 (2004)
https://doi.org/10.1116/1.1771662
Published: July 2004
View articletitled, Real time spectroscopic ellipsometry study during the growth of nanocrystalline nitride protective coatings
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Journal Articles

Conduction and trapping mechanisms in SiO 2 films grown near room temperature by multipolar electron cyclotron resonance plasma enhanced chemical vapor deposition

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Gratiela I. Isai, Jisk Holleman, Hans Wallinga, Pierre H. Woerlee
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 22, 1022–1029 (2004)
https://doi.org/10.1116/1.1736645
Published: May 2004
View articletitled, Conduction and trapping mechanisms in SiO 2 films grown near room temperature by multipolar electron cyclotron resonance plasma enhanced chemical vapor deposition
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Journal Articles

Tantalum film for x-ray lithography mask deposited by electron cyclotron resonance plasma source coupled with divided microwaves

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H. Nishimura, T. Ono, M. Oda, S. Matsuo
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 22, 40–45 (2004)
https://doi.org/10.1116/1.1633769
Published: December 2003
View articletitled, Tantalum film for x-ray lithography mask deposited by electron cyclotron resonance plasma source coupled with divided microwaves
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