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Journal Articles

High-performance normally off AlGaN/GaN high electron mobility transistor with p-type h-BN cap layer

Nan Wang, Haiping Wang, Zhuokun He, Xiaohui Gao, Dunjun Chen, Yukun Wang, Haoran Ding, Yufei Yang, Qianyu Hou, Wenhong Sun

J. Vac. Sci. Technol. B 41, 062203 (2023)

https://doi.org/10.1116/5.0169900

Published: October 2023

View articletitled, High-performance normally off AlGaN/GaN high electron mobility transistor with p-type h-BN cap layer

Journal Articles

Radiation damage in GaN/AlGaN and SiC electronic and photonic devices

S. J. Pearton, Xinyi Xia, Fan Ren, Md Abu Jafar Rasel, Sergei Stepanoff, Nahid Al-Mamun, Aman Haque, Douglas E. Wolfe

J. Vac. Sci. Technol. B 41, 030802 (2023)

https://doi.org/10.1116/6.0002628

Published: April 2023

View articletitled, Radiation damage in GaN/AlGaN and SiC electronic and photonic devices

Journal Articles

Ionization probability of sputtered indium atoms under impact of slow highly charged ions

Matthias Herder, Philipp Ernst, Lucia Skopinski, Boris Weidtmann, Marika Schleberger, Andreas Wucher

J. Vac. Sci. Technol. B 38, 044003 (2020)

https://doi.org/10.1116/6.0000171

Published: May 2020

View articletitled, Ionization probability of sputtered indium atoms under impact of slow highly charged ions

Journal Articles

Improvement of ionization yield in sputtered neutral mass spectrometry using pulsed infrared and ultraviolet lasers

Reiko Saito, Haruko Akutsu, Jun Asakawa, Yue Zhao, Kei Kiyokawa, Masato Morita, Tetsuo Sakamoto, Masaaki Fujii

J. Vac. Sci. Technol. B 38, 034011 (2020)

https://doi.org/10.1116/6.0000088

Published: April 2020

View articletitled, Improvement of ionization yield in sputtered neutral mass spectrometry using pulsed infrared and ultraviolet lasers

Journal Articles

Comprehensive analysis of field-electron emission properties of nanosized silicon blade-type and needle-type field emitters

Gleb D. Demin, Nikolay A. Djuzhev, Nikolay A. Filippov, Petr Yu. Glagolev, Iliya D. Evsikov, Nikolay N. Patyukov

J. Vac. Sci. Technol. B 37, 022903 (2019)

https://doi.org/10.1116/1.5068688

Published: February 2019

View articletitled, Comprehensive analysis of field-electron emission properties of nanosized silicon blade-type and needle-type field emitters

Journal Articles

Mapping of CMOS FET degradation in bias space—Application to dram peripheral devices

B. Kaczer, J. Franco, S. Tyaginov, M. Jech, G. Rzepa, T. Grasser, B. J. O'Sullivan, R. Ritzenhaler, T. Schram, A. Spessot, D. Linten, N. Horiguchi

J. Vac. Sci. Technol. B 35, 01A109 (2017)

https://doi.org/10.1116/1.4972872

Published: December 2016

View articletitled, Mapping of CMOS FET degradation in bias space—Application to dram peripheral devices

Journal Articles

Investigation of kink effect in normally-off AlGaN/GaN recessed-gate MOS-heterostructure FETs

Youngjin Kang, Hyuk-kee Sung, Hyungtak Kim

J. Vac. Sci. Technol. B 34, 052202 (2016)

https://doi.org/10.1116/1.4959842

Published: July 2016

View articletitled, Investigation of kink effect in normally-off AlGaN/GaN recessed-gate MOS-heterostructure FETs

Journal Articles

Local oxide capacitance as a crucial parameter for characterization of hot-carrier degradation in long-channel n-MOSFETs

Ivan Starkov, Hubert Enichlmair

J. Vac. Sci. Technol. B 31, 01A118 (2013)

https://doi.org/10.1116/1.4774106

Published: January 2013

View articletitled, Local oxide capacitance as a crucial parameter for characterization of hot-carrier degradation in long-channel n-MOSFETs

Journal Articles

Highly efficient and long life metal–insulator–metal cathodes

Toshiaki Kusunoki, Mutsumi Suzuki, Masakazu Sagawa, Yoshiro Mikami, Etsuko Nishimura, Mitsuharu Ikeda, Tatsumi Hirano, Kazutaka Tsuji

J. Vac. Sci. Technol. B 30, 041202 (2012)

https://doi.org/10.1116/1.4720096

Published: May 2012

View articletitled, Highly efficient and long life metal–insulator–metal cathodes

Journal Articles

Processing dependences of channel hot-carrier degradation on strained-Si p -channel metal-oxide semiconductor field-effect transistors

E. Amat, J. Martin-Martínez, M. B. Gonzalez, R. Rodríguez, M. Nafría, X. Aymerich, P. Verheyen, E. Simoen

J. Vac. Sci. Technol. B 29, 01AB07 (2011)

https://doi.org/10.1116/1.3523396

Published: January 2011

View articletitled, Processing dependences of channel hot-carrier degradation on strained-Si p -channel metal-oxide semiconductor field-effect transistors

Journal Articles

Antimonide-based depletion-mode metal-oxide-semiconductor field-effect transistors using small-bandgap InAs channel layers

H.-K. Lin, G.-Y. Liau, H.-K. Liu

J. Vac. Sci. Technol. B 28, 1235–1238 (2010)

https://doi.org/10.1116/1.3506111

Published: November 2010

View articletitled, Antimonide-based depletion-mode metal-oxide-semiconductor field-effect transistors using small-bandgap InAs channel layers

Journal Articles

Al Ga As ∕ Ga As high-electron mobility transistor with In 0.1 Ga 0.9 As ∕ In 0.22 Ga 0.78 As ∕ In 0.1 Ga 0.9 As channel grown by metal-organic chemical vapor deposition

Yu-Shyan Lin, Bo-Yuan Chen

J. Vac. Sci. Technol. B 27, 606–611 (2009)

https://doi.org/10.1116/1.3093883

Published: March 2009

View articletitled, Al Ga As ∕ Ga As high-electron mobility transistor with In 0.1 Ga 0.9 As ∕ In 0.22 Ga 0.78 As ∕ In 0.1 Ga 0.9 As channel grown by metal-organic chemical vapor deposition

Journal Articles

Hot carrier degradation in Hf Si O N ∕ Ti N fin shaped field effect transistor with different substrate orientations

Chadwin D. Young, Ji-Woon Yang, Kenneth Matthews, Sagar Suthram, Muhammad Mustafa Hussain, Gennadi Bersuker, Casey Smith, Rusty Harris, Rino Choi, Byoung Hun Lee, Hsing-Huang Tseng

J. Vac. Sci. Technol. B 27, 468–471 (2009)

https://doi.org/10.1116/1.3072919

Published: February 2009

View articletitled, Hot carrier degradation in Hf Si O N ∕ Ti N fin shaped field effect transistor with different substrate orientations

Journal Articles

Comparative study on temperature-dependent characteristics of In P ∕ In Ga As single- and double-heterojunction bipolar transistors

Wei-Hsin Chen, Tzu-Pin Chen, Chi-Jhung Lee, Ching-Wen Hung, Kuei-Yi Chu, Li-Yang Chen, Tsung-Han Tsai, Wen-Chau Liu

J. Vac. Sci. Technol. B 26, 618–623 (2008)

https://doi.org/10.1116/1.2890707

Published: March 2008

View articletitled, Comparative study on temperature-dependent characteristics of In P ∕ In Ga As single- and double-heterojunction bipolar transistors

Journal Articles

Fabrication of GaN-based metal-oxide-semiconductor light-emitting diodes operating in ultraviolet spectral region

T. Honda, T. Kobayashi, S. Komiyama, Y. Mashiyama

J. Vac. Sci. Technol. B 25, 1529–1532 (2007)

https://doi.org/10.1116/1.2746343

Published: July 2007

View articletitled, Fabrication of GaN-based metal-oxide-semiconductor light-emitting diodes operating in ultraviolet spectral region

Journal Articles

Gate oxide reliability in an integrated metal-oxide-semiconductor field-effect transistor-microelectromechanical system technology

Robert M. Fleming, Bruce L. Draper

J. Vac. Sci. Technol. B 24, 91–96 (2006)

https://doi.org/10.1116/1.2141628

Published: January 2006

View articletitled, Gate oxide reliability in an integrated metal-oxide-semiconductor field-effect transistor-microelectromechanical system technology

Journal Articles

Temperature-dependent dc characteristics of an In Ga As ∕ In Ga As P heterojunction bipolar transistor with an InGaAsP spacer and a composite-collector structure

Jing-Yuh Chen, Chun-Yuan Chen, Kuan-Ming Lee, Chih-Hung Yen, Sheng-Fu Tsai, Shiou-Ying Cheng, Wen-Chau Liu

J. Vac. Sci. Technol. B 22, 2727–2733 (2004)

https://doi.org/10.1116/1.1807840

Published: November 2004

View articletitled, Temperature-dependent dc characteristics of an In Ga As ∕ In Ga As P heterojunction bipolar transistor with an InGaAsP spacer and a composite-collector structure

Journal Articles

Carbon-doped In P ∕ In 0.53 Ga 0.47 As single and double heterojunction bipolar transistors grown by solid-source molecular-beam epitaxy

R. Zhang, S. F. Yoon, K. H. Tan, K. L. Lew, Z. Z. Sun

J. Vac. Sci. Technol. B 22, 2499–2503 (2004)

https://doi.org/10.1116/1.1800355

Published: October 2004

View articletitled, Carbon-doped In P ∕ In 0.53 Ga 0.47 As single and double heterojunction bipolar transistors grown by solid-source molecular-beam epitaxy

Journal Articles

Field emitters for space application

S. E. Huq, B. J. Kent, R. Stevens, R. A. Lawes, N. S. Xu, J. C. She

J. Vac. Sci. Technol. B 19, 988–991 (2001)

https://doi.org/10.1116/1.1366705

Published: May 2001

View articletitled, Field emitters for space application

Journal Articles

Low-voltage operation from the tower structure metal–oxide–semiconductor field-effect transistor Si field emitter

Keisuke Koga, Seigo Kanemaru, Takashi Matsukawa, Junji Itoh

J. Vac. Sci. Technol. B 17, 588–591 (1999)

https://doi.org/10.1116/1.590599

Published: March 1999

View articletitled, Low-voltage operation from the tower structure metal–oxide–semiconductor field-effect transistor Si field emitter

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High-performance normally off AlGaN/GaN high electron mobility transistor with p-type h-BN cap layer

Radiation damage in GaN/AlGaN and SiC electronic and photonic devices

Ionization probability of sputtered indium atoms under impact of slow highly charged ions

Improvement of ionization yield in sputtered neutral mass spectrometry using pulsed infrared and ultraviolet lasers

Comprehensive analysis of field-electron emission properties of nanosized silicon blade-type and needle-type field emitters

Mapping of CMOS FET degradation in bias space—Application to dram peripheral devices

Investigation of kink effect in normally-off AlGaN/GaN recessed-gate MOS-heterostructure FETs

Local oxide capacitance as a crucial parameter for characterization of hot-carrier degradation in long-channel n-MOSFETs

Highly efficient and long life metal–insulator–metal cathodes

Processing dependences of channel hot-carrier degradation on strained-Si p -channel metal-oxide semiconductor field-effect transistors

Antimonide-based depletion-mode metal-oxide-semiconductor field-effect transistors using small-bandgap InAs channel layers

Al Ga As ∕ Ga As high-electron mobility transistor with In 0.1 Ga 0.9 As ∕ In 0.22 Ga 0.78 As ∕ In 0.1 Ga 0.9 As channel grown by metal-organic chemical vapor deposition

Hot carrier degradation in Hf Si O N ∕ Ti N fin shaped field effect transistor with different substrate orientations

Comparative study on temperature-dependent characteristics of In P ∕ In Ga As single- and double-heterojunction bipolar transistors

Fabrication of GaN-based metal-oxide-semiconductor light-emitting diodes operating in ultraviolet spectral region

Gate oxide reliability in an integrated metal-oxide-semiconductor field-effect transistor-microelectromechanical system technology

Temperature-dependent dc characteristics of an In Ga As ∕ In Ga As P heterojunction bipolar transistor with an InGaAsP spacer and a composite-collector structure

Carbon-doped In P ∕ In 0.53 Ga 0.47 As single and double heterojunction bipolar transistors grown by solid-source molecular-beam epitaxy

Field emitters for space application

Low-voltage operation from the tower structure metal–oxide–semiconductor field-effect transistor Si field emitter

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