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Journal Articles

Plasma confinement by an optoelectronic system

Editor’s Pick
Ryuta Tsukazaki (塚嵜 琉太), Haruhiro Naito (内藤 陽大), Hisashi Koga (古賀 永), Akito Fukuda (福田 旺土), Naoki Kato (加藤 直樹), Takayuki Watanabe (渡辺 貴之), Susumu Takabayashi (鷹林 将)
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 034201 (2024)
https://doi.org/10.1116/6.0003520
Published: April 2024
View article titled, Plasma confinement by an optoelectronic system
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Includes: Supplementary data
Journal Articles

Improved impedance matching speed with gradient descent for advanced RF plasma system

Dongwon Shin, Sang Jeen Hong
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 064002 (2023)
https://doi.org/10.1116/6.0003034
Published: October 2023
View article titled, Improved impedance matching speed with gradient descent for advanced RF plasma system
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Journal Articles

Influence of external circuitry on CF4 breakdown process in capacitively coupled plasma

Zhaoyu Chen, Jingwen Xu, Hongyu Wang, Hao Wu, Wei Jiang, Ya Zhang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 053203 (2023)
https://doi.org/10.1116/5.0161552
Published: September 2023
View article titled, Influence of external circuitry on CF<sub>4</sub> breakdown process in capacitively coupled plasma
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Journal Articles

Development of the electron cyclotron resonance heating system for Divertor Tokamak Test

Saul Garavaglia, Luca Balbinot, Alessandro Bruschi, Daniele Busi, Andrea Bussolan, Francesco Fanale, Gustavo Granucci, Alessandro Moro, Paola Platania, Natale Rispoli, Afra Romano, Emanuele Sartori, Stefan Schmuck, Alessandro Simonetto, Espedito Vassallo
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 044201 (2023)
https://doi.org/10.1116/6.0002396
Published: May 2023
View article titled, Development of the electron cyclotron resonance heating system for Divertor Tokamak Test
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Journal Articles

On the chemistry mechanism for low-pressure chlorine process plasmas

Dmitry Levko, Laxminarayan L. Raja
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 052205 (2022)
https://doi.org/10.1116/6.0002055
Published: September 2022
View article titled, On the chemistry mechanism for low-pressure chlorine process plasmas
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Journal Articles

Miniature plasma source for in situ extreme ultraviolet lithographic scanner cleaning

Mark van de Kerkhof, Edgar Osorio, Vladimir Krivtsun, Maxim Spiridonov, Dmitry Astakhov, Viacheslav Medvedev
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 022601 (2022)
https://doi.org/10.1116/6.0001636
Published: March 2022
View article titled, Miniature plasma source for <em>in situ</em> extreme ultraviolet lithographic scanner cleaning
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Journal Articles

Simulation-aided design of very-high-frequency excited nitrogen plasma confinement using a shield plate

Yasuhiro Isobe, Takayuki Sakai, Kyoichi Suguro, Naoto Miyashita, Hiroki Kondo, Kenji Ishikawa, Amalraj Frank Wilson, Naohiro Shimizu, Osamu Oda, Makoto Sekine, Masaru Hori
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 37, 061215 (2019)
https://doi.org/10.1116/1.5114831
Published: December 2019
View article titled, Simulation-aided design of very-high-frequency excited nitrogen plasma confinement using a shield plate
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Journal Articles

Effects of plasma shield plate design on epitaxial GaN films grown for large-sized wafers in radical-enhanced metalorganic chemical vapor deposition

Yasuhiro Isobe, Takayuki Sakai, Naoharu Sugiyama, Ichiro Mizushima, Kyoichi Suguro, Naoto Miyashita, Yi Lu, Amalraj Frank Wilson, Dhasiyan Arun Kumar, Nobuyuki Ikarashi, Hiroki Kondo, Kenji Ishikawa, Naohiro Shimizu, Osamu Oda, Makoto Sekine, Masaru Hori
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 37, 031201 (2019)
https://doi.org/10.1116/1.5083970
Published: April 2019
View article titled, Effects of plasma shield plate design on epitaxial GaN films grown for large-sized wafers in radical-enhanced metalorganic chemical vapor deposition
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Journal Articles

Pore surface grafting of porous low-k dielectrics by selective polymers

Askar Rezvanov, Liping Zhang, Mitsuhiro Watanabe, Mikhail B. Krishtab, Lin Zhang, Nigel Hacker, Patrick Verdonck, Silvia Armini, Jean-François G. N. G. de Marneffe
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 021211 (2017)
https://doi.org/10.1116/1.4978046
Published: March 2017
View article titled, Pore surface grafting of porous low-k dielectrics by selective polymers
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Journal Articles

Effect of BCl3 in chlorine-based plasma on etching 4H-SiC for photoconductive semiconductor switch applications

Huseyin Ekinci, Vladimir V. Kuryatkov, Daniel L. Mauch, James C. Dickens, Sergey A. Nikishin
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 051205 (2014)
https://doi.org/10.1116/1.4892172
Published: August 2014
View article titled, Effect of BCl<sub>3</sub> in chlorine-based plasma on etching 4H-SiC for photoconductive semiconductor switch applications
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Journal Articles

Differences in erosion mechanism and selectivity between Ti and TiN in fluorocarbon plasmas for dielectric etch

Florian Weilnboeck, Elliot Bartis, Sivan Shachar, Gottlieb S. Oehrlein, David Farber, Tom Lii, Chet Lenox
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 30, 041811 (2012)
https://doi.org/10.1116/1.4736979
Published: July 2012
View article titled, Differences in erosion mechanism and selectivity between Ti and TiN in fluorocarbon plasmas for dielectric etch
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Journal Articles

Anomalous Rashba effect of bismuth(111) thin films studied by high-resolution spin- and angle-resolved photoemission spectroscopy

Akari Takayama, Takafumi Sato, Seigo Souma, Takashi Takahashi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 30, 04E107 (2012)
https://doi.org/10.1116/1.4731467
Published: June 2012
View article titled, Anomalous Rashba effect of bismuth(111) thin films studied by high-resolution spin- and angle-resolved photoemission spectroscopy
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Journal Articles

Study of Ti etching and selectivity mechanism in fluorocarbon plasmas for dielectric etch

F. Weilnboeck, E. Bartis, S. Shachar, G. S. Oehrlein, D. Farber, T. Lii, C. Lenox
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 30, 021804 (2012)
https://doi.org/10.1116/1.3690643
Published: March 2012
View article titled, Study of Ti etching and selectivity mechanism in fluorocarbon plasmas for dielectric etch
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Journal Articles

Efficient high-current field emission from arrays of carbon nanotube columns

A. Navitski, G. Müller, V. Sakharuk, A. L. Prudnikava, B. G. Shulitski, V. A. Labunov
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, C2B14–C2B19 (2010)
https://doi.org/10.1116/1.3300062
Published: March 2010
View article titled, Efficient high-current field emission from arrays of carbon nanotube columns
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Journal Articles

High performance of compact radical monitoring probe in H 2 / N 2 mixture plasma

Chang Sung Moon, Keigo Takeda, Seigo Takashima, Makoto Sekine, Yuichi Setsuhara, Masaharu Shiratani, Masaru Hori
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, L17–L20 (2010)
https://doi.org/10.1116/1.3327926
Published: March 2010
View article titled, High performance of compact radical monitoring probe in H 2 / N 2 mixture plasma
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Journal Articles

Low temperature plasma-initiated copolymerization of styrene and maleic anhydride

Da Yan, Xu-Bo Yuan, Gui-Qiu Ma, Jing Sheng
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 1450–1453 (2009)
https://doi.org/10.1116/1.3058728
Published: May 2009
View article titled, Low temperature plasma-initiated copolymerization of styrene and maleic anhydride
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Journal Articles

Dry etching of GaAs in high pressure, capacitively coupled B Cl 3 ∕ N 2 plasmas

J. W. Lee, J. K. Kim, J. H. Lee, Y. W. Joo, Y. H. Park, H. S. Noh, S. J. Pearton
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 681–683 (2009)
https://doi.org/10.1116/1.3079665
Published: March 2009
View article titled, Dry etching of GaAs in high pressure, capacitively coupled B Cl 3 ∕ N 2 plasmas
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Journal Articles

Hydrogen plasma-enhanced atomic layer deposition of copper thin films

Liqi Wu, Eric Eisenbraun
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 25, 2581–2585 (2007)
https://doi.org/10.1116/1.2779050
Published: December 2007
View article titled, Hydrogen plasma-enhanced atomic layer deposition of copper thin films
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Journal Articles

On-wafer monitoring of charge accumulation and sidewall conductivity in high-aspect-ratio contact holes during Si O 2 etching process

Butsurin Jinnai, Toshiyuki Orita, Mamoru Konishi, Jun Hashimoto, Yoshinari Ichihashi, Akito Nishitani, Shingo Kadomura, Hiroto Ohtake, Seiji Samukawa
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 25, 1808–1813 (2007)
https://doi.org/10.1116/1.2794050
Published: October 2007
View article titled, On-wafer monitoring of charge accumulation and sidewall conductivity in high-aspect-ratio contact holes during Si O 2 etching process
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Journal Articles

Formation of atomic hydrogen during radio frequency nitrogen plasma assisted chemical beam epitaxy of III–V dilute nitrides

A. Fotkatzikis, M.-A. Pinault, J. A. H. Coaquira, A. Freundlich
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 23, 1333–1336 (2005)
https://doi.org/10.1116/1.1885016
Published: June 2005
View article titled, Formation of atomic hydrogen during radio frequency nitrogen plasma assisted chemical beam epitaxy of III–V dilute nitrides
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