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Journal Articles

Effect of rapid thermal annealing on the mechanical stress and physico-chemical properties in plasma enhanced atomic layer deposited silicon nitride thin films

Antony Premkumar Peter, Alfonso Sepulveda Marquez, Johan Meersschaut, Praveen Dara, Timothee Blanquart, Takayama Tomomi, Ebisudani Taishi, Shiba Elichiro, Yosuke Kimura, Sander van Gompel, Pierre Morin
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 054001 (2022)
https://doi.org/10.1116/6.0001922
Published: August 2022
View article titled, Effect of rapid thermal annealing on the mechanical stress and physico-chemical properties in plasma enhanced atomic layer deposited silicon nitride thin films
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Journal Articles

Aluminum metallization of III–V semiconductors for the study of proximity superconductivity

Wendy L. Sarney, Stefan P. Svensson, Asher C. Leff, William F. Schiela, Joseph O. Yuan, Matthieu C. Dartiailh, William Mayer, Kaushini S. Wickramasinghe, Javad Shabani
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 38, 032212 (2020)
https://doi.org/10.1116/1.5145073
Published: May 2020
View article titled, Aluminum metallization of III–V semiconductors for the study of proximity superconductivity
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Journal Articles

Toward understanding weak matrix effects in TOF SIMS

Lev D. Gelb, Amy V. Walker
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 03F127 (2018)
https://doi.org/10.1116/1.5019682
Published: March 2018
View article titled, Toward understanding weak matrix effects in TOF SIMS
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Journal Articles

Dependence of ferromagnetic properties on phosphorus concentration in Ga1-xMnxAs1-yPy

Xiang Li, Xinyu Liu, Sining Dong, Cameron Gorsak, Jacek K. Furdyna, Margaret Dobrowolska, Seul-Ki Bac, Sanghoon Lee, Sergei Rouvimov
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 02D104 (2018)
https://doi.org/10.1116/1.5014055
Published: February 2018
View article titled, Dependence of ferromagnetic properties on phosphorus concentration in Ga<sub>1-</sub><sub><em>x</em></sub>Mn<sub><em>x</em></sub>As<sub>1-</sub><sub><em>y</em></sub>P<sub><em>y</em></sub>
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Journal Articles

Fabrication and comparative study of DC and low frequency noise characterization of GaN/AlGaN based MOS-HEMT and HEMT

Md Rezaul Hasan, Abhishek Motayed, Md Shamiul Fahad, Mulpuri V. Rao
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 052202 (2017)
https://doi.org/10.1116/1.4998937
Published: August 2017
View article titled, Fabrication and comparative study of DC and low frequency noise characterization of GaN/AlGaN based MOS-HEMT and HEMT
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Journal Articles

On the study of antimony incorporation in InAs/InAsSb superlattices for infrared sensing

Heather J. Haugan, Gail J. Brown, Joseph A. Peoples
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 02B107 (2017)
https://doi.org/10.1116/1.4977009
Published: February 2017
View article titled, On the study of antimony incorporation in InAs/InAsSb superlattices for infrared sensing
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Journal Articles

Modulation of the work function of graphene by Na and Cl coadsorbed on opposite sides on graphene

Guang Yuan, Xinxiang Song, Hidenori Mimura
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 02C104 (2017)
https://doi.org/10.1116/1.4972772
Published: January 2017
View article titled, Modulation of the work function of graphene by Na and Cl coadsorbed on opposite sides on graphene
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Journal Articles

X-ray diffraction analysis for step and linearly graded InxGa1−xAs/GaAs (001) heterostructures using various hkl reflections

Fahad A. Althowibi, Paul B. Rago, John E. Ayers
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 041209 (2016)
https://doi.org/10.1116/1.4949517
Published: May 2016
View article titled, X-ray diffraction analysis for step and linearly graded In<sub>x</sub>Ga<sub>1−x</sub>As/GaAs (001) heterostructures using various hkl reflections
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Journal Articles

Quantification of matrix and impurity elements in AlxGa1−xN compounds by secondary ion mass spectrometry

Peter Jörchel, Peter Helm, Frank Brunner, Andreas Thies, Olaf Krüger, Markus Weyers
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 03H128 (2016)
https://doi.org/10.1116/1.4943658
Published: March 2016
View article titled, Quantification of matrix and impurity elements in Al<sub>x</sub>Ga<sub>1−x</sub>N compounds by secondary ion mass spectrometry
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Journal Articles

MBE grown GaN/AlGaN lateral Schottky barrier diodes for high frequency applications

Grzegorz Cywiński, Krzesimir Szkudlarek, Piotr Kruszewski, Ivan Yahniuk, Sergey Yatsunenko, Grzegorz Muzioł, Marcin Siekacz, Czesław Skierbiszewski, Sergey Rumyantsev, Wojciech Knap
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 02L118 (2016)
https://doi.org/10.1116/1.4944320
Published: March 2016
View article titled, MBE grown GaN/AlGaN lateral Schottky barrier diodes for high frequency applications
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Journal Articles

PECVD low and ultralow dielectric constant materials: From invention and research to products

Alfred Grill
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 020801 (2016)
https://doi.org/10.1116/1.4943049
Published: March 2016
View article titled, PECVD low and ultralow dielectric constant materials: From invention and research to products
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Journal Articles

Study of the electrical and chemical properties of the multistep deposited and two-step (ultraviolet ozone cum rapid thermal) annealed HfO2 gate stack

Kwang Sing Yew, Diing Shenp Ang, Lei Jun Tang, Jisheng Pan
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 011205 (2016)
https://doi.org/10.1116/1.4936893
Published: December 2015
View article titled, Study of the electrical and chemical properties of the multistep deposited and two-step (ultraviolet ozone cum rapid thermal) annealed HfO<sub>2</sub> gate stack
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Journal Articles

Flux dependent Sb-incorporation during molecular beam epitaxy of InAsSb

Wendy L. Sarney, Stefan P. Svensson
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 060604 (2015)
https://doi.org/10.1116/1.4935892
Published: November 2015
View article titled, Flux dependent Sb-incorporation during molecular beam epitaxy of InAsSb
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Journal Articles

Correlation of lithographic performance of the electron beam resists SML and ZEP with their chemical structure

Anushka Gangnaik, Yordan M. Georgiev, Justin D. Holmes
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 041601 (2015)
https://doi.org/10.1116/1.4926387
Published: July 2015
View article titled, Correlation of lithographic performance of the electron beam resists SML and ZEP with their chemical structure
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Journal Articles

Shortwave-infrared photoluminescence from Ge1−xSnx thin films on silicon

Seyed Amir Ghetmiri, Wei Du, Benjamin R. Conley, Aboozar Mosleh, Amjad Nazzal, Greg Sun, Richard A. Soref, Joe Margetis, John Tolle, Hameed A. Naseem, Shui-Qing Yu
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 060601 (2014)
https://doi.org/10.1116/1.4897917
Published: October 2014
View article titled, Shortwave-infrared photoluminescence from Ge<sub>1−x</sub>Sn<sub>x</sub> thin films on silicon
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Journal Articles

Effects of MoS2 thickness and air humidity on transport characteristics of plasma-doped MoS2 field-effect transistors

Mikai Chen, Sungjin Wi, Hongsuk Nam, Greg Priessnitz, Xiaogan Liang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 06FF02 (2014)
https://doi.org/10.1116/1.4897133
Published: October 2014
View article titled, Effects of MoS<sub>2</sub> thickness and air humidity on transport characteristics of plasma-doped MoS<sub>2</sub> field-effect transistors
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Journal Articles

Dual-superlattice calibrations for group-III species in III-V semiconductor epitaxial structure growth

Richard P. Leavitt, Lei He, Christopher J. K. Richardson
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 041205 (2014)
https://doi.org/10.1116/1.4887482
Published: July 2014
View article titled, Dual-superlattice calibrations for group-III species in III-V semiconductor epitaxial structure growth
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Journal Articles

Rapid thermal annealing effect on GaAsBi/GaAs single quantum wells grown by molecular beam epitaxy

Perry C. Grant, Dongsheng Fan, Aboozar Mosleh, Shui-Qing Yu, Vitaliy G. Dorogan, Michael E. Hawkridge, Yuriy I. Mazur, Mourad Benamara, Gregory J. Salamo, Shane R. Johnson
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 02C119 (2014)
https://doi.org/10.1116/1.4868110
Published: March 2014
View article titled, Rapid thermal annealing effect on GaAsBi/GaAs single quantum wells grown by molecular beam epitaxy
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Journal Articles

Discrepancies in the nature of nitrogen incorporation in dilute-nitride GaSbN and GaAsN films

Wendy L. Sarney, Stefan P. Svensson
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 31, 051206 (2013)
https://doi.org/10.1116/1.4819303
Published: August 2013
View article titled, Discrepancies in the nature of nitrogen incorporation in dilute-nitride GaSbN and GaAsN films
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Journal Articles

Inducing a junction in n-type InxGa(1−x)N

Joshua J. Williams, Todd L. Williamson, Mark A. Hoffbauer, Alec M. Fischer, Stephen M. Goodnick, Nikolai N. Faleev, Kunal Ghosh, Christiana B. Honsberg
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 31, 03C127 (2013)
https://doi.org/10.1116/1.4797489
Published: April 2013
View article titled, Inducing a junction in n-type In<sub>x</sub>Ga<sub>(1−x)</sub>N
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