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Journal Articles

Systematic study of the outgassing behavior of different ceramic materials

Katharina Battes, Christian Day, Volker Hauer
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 39, 034202 (2021)
https://doi.org/10.1116/6.0000954
Published: April 2021
View articletitled, Systematic study of the outgassing behavior of different ceramic materials
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Journal Articles

Fabrication of free-standing silicon carbide on silicon microstructures via massive silicon sublimation

Mojtaba Amjadipour, Jennifer MacLeod, Nunzio Motta, Francesca Iacopi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 38, 062202 (2020)
https://doi.org/10.1116/6.0000490
Published: September 2020
View articletitled, Fabrication of free-standing silicon carbide on silicon microstructures via massive silicon sublimation
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Journal Articles

Valence and conduction band offsets at beryllium oxide interfaces with silicon carbide and III-V nitrides

Donghyi Koh, Sanjay K. Banerjee, Chris Locke, Stephen E. Saddow, Justin Brockman, Markus Kuhn, Sean W. King
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 37, 041206 (2019)
https://doi.org/10.1116/1.5111049
Published: July 2019
View articletitled, Valence and conduction band offsets at beryllium oxide interfaces with silicon carbide and III-V nitrides
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Journal Articles

Dual ion beam grown silicon carbide thin films: Variation of refractive index and bandgap with film thickness

Aakash Mathur, Dipayan Pal, Ajaib Singh, Rinki Singh, Stefan Zollner, Sudeshna Chattopadhyay
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 37, 041802 (2019)
https://doi.org/10.1116/1.5097628
Published: July 2019
View articletitled, Dual ion beam grown silicon carbide thin films: Variation of refractive index and bandgap with film thickness
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Includes: Supplementary data
Journal Articles

Maskless random antireflective nanotexturing of single crystal SiC

Lars F. Voss, Clint D. Frye, Mihail Bora, David L. Hall, Paulius V. Grivickas, Adam M. Conway
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 37, 040601 (2019)
https://doi.org/10.1116/1.5108513
Published: May 2019
View articletitled, Maskless random antireflective nanotexturing of single crystal SiC
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Journal Articles

Hydrogen evolution in hydrogenated microcrystalline silicon carbide thin films

Soumia Nemmour, Siham Djoumi, Fatiha Kail, Pere Roura-Grabulosa, Pere Roca i Cabarrocas, Larbi Chahed
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 37, 031218 (2019)
https://doi.org/10.1116/1.5090174
Published: May 2019
View articletitled, Hydrogen evolution in hydrogenated microcrystalline silicon carbide thin films
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Journal Articles

Evaluation of interface trap characterization methods in 4H-SiC metal oxide semiconductor structures over a wide temperature range

Fabian Triendl, Gernot Fleckl, Michael Schneider, Georg Pfusterschmied, Ulrich Schmid
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 37, 032903 (2019)
https://doi.org/10.1116/1.5094137
Published: May 2019
View articletitled, Evaluation of interface trap characterization methods in 4H-SiC metal oxide semiconductor structures over a wide temperature range
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Journal Articles

Optimization of a nanoscale field emission cell with a planar blade-shaped multilayer graphene/SiC emitter

Igor L. Jityaev, Alexander M. Svetlichnyi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 37, 012201 (2019)
https://doi.org/10.1116/1.5051253
Published: January 2019
View articletitled, Optimization of a nanoscale field emission cell with a planar blade-shaped multilayer graphene/SiC emitter
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Journal Articles

Effect of carbon doping on threshold voltage and mobility of In-Si-O thin-film transistors

Kazunori Kurishima, Toshihide Nabatame, Nobuhiko Mitoma, Takio Kizu, Shinya Aikawa, Kazuhito Tsukagoshi, Akihiko Ohi, Toyohiro Chikyow, Atsushi Ogura
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 061206 (2018)
https://doi.org/10.1116/1.5039665
Published: October 2018
View articletitled, Effect of carbon doping on threshold voltage and mobility of In-Si-O thin-film transistors
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Journal Articles

Synchrotron radiation study of metallic titanium deposited on dielectric substrates

Justin Bogan, Venkateswaran Selvaraju, Anita Brady-Boyd, Greg Hughes, Robert O'Connor
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 040602 (2018)
https://doi.org/10.1116/1.5036943
Published: June 2018
View articletitled, Synchrotron radiation study of metallic titanium deposited on dielectric substrates
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Journal Articles

Emission properties of undoped and boron-doped nanocrystalline diamond films coated silicon carbide field emitter arrays

Oleg A. Ivanov, Sergey A. Bogdanov, Anatoly L. Vikharev, Victor V. Luchinin, Vladimir A. Golubkov, Alexey S. Ivanov, Vladimir A. Ilyin
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 021204 (2018)
https://doi.org/10.1116/1.5012977
Published: March 2018
View articletitled, Emission properties of undoped and boron-doped nanocrystalline diamond films coated silicon carbide field emitter arrays
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Journal Articles

Rapid feedback of chemical vapor deposition growth mechanisms by operando X-ray diffraction

Aiden A. Martin, Philip J. Depond, Michael Bagge-Hansen, Jonathan R. I. Lee, Jae-Hyuck Yoo, Selim Elhadj, Manyalibo J. Matthews, Tony van Buuren
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 020601 (2018)
https://doi.org/10.1116/1.5019742
Published: March 2018
View articletitled, Rapid feedback of chemical vapor deposition growth mechanisms by operando X-ray diffraction
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Journal Articles

High temperature diode sensors based on InGaN/AlGaN structures

Vasily A. Krasnov, Stanislav V. Shutov, Sergey Y. Yerochin, Aleksey N. Demenskiy
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 022905 (2018)
https://doi.org/10.1116/1.5016967
Published: March 2018
View articletitled, High temperature diode sensors based on InGaN/AlGaN structures
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Journal Articles

Dynamic SIMS for materials analysis in nuclear science

Paula Peres, Seo-Youn Choi, François Desse, Philippe Bienvenu, Ingrid Roure, Yves Pipon, Clotilde Gaillard, Nathalie Moncoffre, Lola Sarrasin, Denis Mangin
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 03F117 (2018)
https://doi.org/10.1116/1.5017027
Published: February 2018
View articletitled, Dynamic SIMS for materials analysis in nuclear science
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Journal Articles

Improved a-B10C2+xHy/Si p-n heterojunction performance after neutron irradiation

George Glenn Peterson, Qing Su, Yongqiang Wang, Natale J. Ianno, Peter A. Dowben, Michael Nastasi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 011207 (2018)
https://doi.org/10.1116/1.5008999
Published: January 2018
View articletitled, Improved a-B10C2+xHy/Si p-n heterojunction performance after neutron irradiation
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Journal Articles

DC sputtering of highly c-axis AlN films on top of 3C-SiC (111)-on-Si (111) substrates under various N2 concentrations

Abid Iqbal, Glenn Walker, Leonie Hold, Alanna Fernandes, Alan Iacopi, Faisal Mohd-Yasin
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 06GH01 (2017)
https://doi.org/10.1116/1.4991748
Published: September 2017
View articletitled, DC sputtering of highly c-axis AlN films on top of 3C-SiC (111)-on-Si (111) substrates under various N2 concentrations
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Journal Articles

Reducing curtaining effects in FIB/SEM applications by a goniometer stage and an image processing method

Thomas Henning Loeber, Bert Laegel, Sandra Wolff, Sebastian Schuff, Frank Balle, Tilmann Beck, Dietmar Eifler, Jan Henrik Fitschen, Gabriele Steidl
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 06GK01 (2017)
https://doi.org/10.1116/1.4991638
Published: September 2017
View articletitled, Reducing curtaining effects in FIB/SEM applications by a goniometer stage and an image processing method
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Journal Articles

High-etch rate processes for performing deep, highly anisotropic etches in silicon carbide using inductively coupled plasma etching

Mehmet Ozgur, Michael Huff
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 042003 (2017)
https://doi.org/10.1116/1.4994785
Published: July 2017
View articletitled, High-etch rate processes for performing deep, highly anisotropic etches in silicon carbide using inductively coupled plasma etching
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Journal Articles

Electron field emission from SiC nanopillars produced by using nanosphere lithography

Damla Yeşilpınar, Cem Çelebi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 041801 (2017)
https://doi.org/10.1116/1.4989853
Published: June 2017
View articletitled, Electron field emission from SiC nanopillars produced by using nanosphere lithography
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Journal Articles

Theoretical investigations on the stability and electronic structures of two-dimensional group-IV ternary alloy monolayers

Toru Akiyama, Go Yoshimura, Kohji Nakamura, Tomonori Ito
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 04F103 (2017)
https://doi.org/10.1116/1.4980048
Published: April 2017
View articletitled, Theoretical investigations on the stability and electronic structures of two-dimensional group-IV ternary alloy monolayers
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Includes: Supplementary data