1-20 of 165
Silicide
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Synchrotron radiation study of metallic titanium deposited on dielectric substrates

Justin Bogan, Venkateswaran Selvaraju, Anita Brady-Boyd, Greg Hughes, Robert O'Connor
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 040602 (2018)
https://doi.org/10.1116/1.5036943
Published: June 2018
View article titled, Synchrotron radiation study of metallic titanium deposited on dielectric substrates
Open the PDF for Synchrotron radiation study of metallic titanium deposited on dielectric substrates in another window
Journal Articles

Nanoscale Schottky barrier mapping of thermally evaporated and sputter deposited W/Si(001) diodes using ballistic electron emission microscopy

Westly Nolting, Chris Durcan, Avyaya J. Narasimham, Vincent P. LaBella
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 04J110 (2016)
https://doi.org/10.1116/1.4958721
Published: July 2016
View article titled, Nanoscale Schottky barrier mapping of thermally evaporated and sputter deposited W/Si(001) diodes using ballistic electron emission microscopy
Open the PDF for Nanoscale Schottky barrier mapping of thermally evaporated and sputter deposited W/Si(001) diodes using ballistic electron emission microscopy in another window
Journal Articles

1.5 nm fabrication of test patterns for characterization of metrological systems

Sergey Babin, Giuseppe Calafiore, Christophe Peroz, Raymond Conley, Nathalie Bouet, Stefano Cabrini, Elaine Chan, Ian Lacey, Wayne R. McKinney, Valeriy V. Yashchuk, Andras E. Vladar
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 06FL01 (2015)
https://doi.org/10.1116/1.4935253
Published: November 2015
View article titled, 1.5 nm fabrication of test patterns for characterization of metrological systems
Open the PDF for 1.5 nm fabrication of test patterns for characterization of metrological systems in another window
Journal Articles

Well-aligned NiSi/Si heterostructured nanowire arrays as field emitters

Shasha Lv, Zhengcao Li, Jiecui Liao, Zhengjun Zhang, Wei Miao
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 02B101 (2015)
https://doi.org/10.1116/1.4898782
Published: October 2014
View article titled, Well-aligned NiSi/Si heterostructured nanowire arrays as field emitters
Open the PDF for Well-aligned NiSi/Si heterostructured nanowire arrays as field emitters in another window
Journal Articles

Focused helium and neon ion beam induced etching for advanced extreme ultraviolet lithography mask repair

Carlos M. Gonzalez, Rajendra Timilsina, Guoliang Li, Gerd Duscher, Philip D. Rack, Winand Slingenbergh, Willem F. van Dorp, Jeff T. M. De Hosson, Kate L. Klein, Huimeng M. Wu, Lewis A. Stern
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 021602 (2014)
https://doi.org/10.1116/1.4868027
Published: March 2014
View article titled, Focused helium and neon ion beam induced etching for advanced extreme ultraviolet lithography mask repair
Open the PDF for Focused helium and neon ion beam induced etching for advanced extreme ultraviolet lithography mask repair in another window
Includes: Supplementary data
Journal Articles

Macroscopic and nanometer scale stress measurement of Ni(Pt)Si silicide: Impact of thermal treatments ranging from millisecond to several hours

Pierre Francois Morin, Remi Beneyton, Magali Gregoire, Alexandre Pofelski, Laurent Clement, Shankar Muthukrishnan, Abhilash J. Mayur
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 011211 (2014)
https://doi.org/10.1116/1.4855175
Published: December 2013
View article titled, Macroscopic and nanometer scale stress measurement of Ni(Pt)Si silicide: Impact of thermal treatments ranging from millisecond to several hours
Open the PDF for Macroscopic and nanometer scale stress measurement of Ni(Pt)Si silicide: Impact of thermal treatments ranging from millisecond to several hours in another window
Journal Articles

Removing imperceptible fluoride residue after chemical dry-cleaning to fabricate uniform low-resistance NiSi film

Takuya Futase, Hisanori Tanioto, Mitsuo Kimoto, Hideaki Tsugane, Hidenori Suzuki, Hiroshi Tobimatsu
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 051203 (2011)
https://doi.org/10.1116/1.3622301
Published: August 2011
View article titled, Removing imperceptible fluoride residue after chemical dry-cleaning to fabricate uniform low-resistance NiSi film
Open the PDF for Removing imperceptible fluoride residue after chemical dry-cleaning to fabricate uniform low-resistance NiSi film in another window
Journal Articles

Effective mobility characteristics of platinum-silicided p -type Schottky barrier metal-oxide-semiconductor field-effect transistor

Moongyu Jang, Myungsim Jun, Taehyoung Zyung
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, 799–801 (2010)
https://doi.org/10.1116/1.3457936
Published: July 2010
View article titled, Effective mobility characteristics of platinum-silicided p -type Schottky barrier metal-oxide-semiconductor field-effect transistor
Open the PDF for Effective mobility characteristics of platinum-silicided p -type Schottky barrier metal-oxide-semiconductor field-effect transistor in another window
Journal Articles

Advanced in situ pre-Ni silicide (Siconi) cleaning at 65 nm to resolve defects in Ni Si x modules

Ruipeng Yang, Na Su, Paolo Bonfanti, Jiaxiang Nie, Jay Ning, Tomi T. Li
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, 56–61 (2010)
https://doi.org/10.1116/1.3271334
Published: January 2010
View article titled, Advanced <em>in situ</em> pre-Ni silicide (Siconi) cleaning at 65 nm to resolve defects in Ni Si x modules
Open the PDF for Advanced <em>in situ</em> pre-Ni silicide (Siconi) cleaning at 65 nm to resolve defects in Ni Si x modules in another window
Journal Articles

Fabrication of high-aspect ratio silicon nanopillars and nanocones using deep reactive ion etching

C. Fischer, J. W. Menezes, S. A. Moshkalev, C. Veríssimo, A. R. Vaz, J. W. Swart
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 2732–2736 (2009)
https://doi.org/10.1116/1.3246359
Published: December 2009
View article titled, Fabrication of high-aspect ratio silicon nanopillars and nanocones using deep reactive ion etching
Open the PDF for Fabrication of high-aspect ratio silicon nanopillars and nanocones using deep reactive ion etching in another window
Journal Articles

Hot carrier degradation in Hf Si O N ∕ Ti N fin shaped field effect transistor with different substrate orientations

Chadwin D. Young, Ji-Woon Yang, Kenneth Matthews, Sagar Suthram, Muhammad Mustafa Hussain, Gennadi Bersuker, Casey Smith, Rusty Harris, Rino Choi, Byoung Hun Lee, Hsing-Huang Tseng
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 468–471 (2009)
https://doi.org/10.1116/1.3072919
Published: February 2009
View article titled, Hot carrier degradation in Hf Si O N ∕ Ti N fin shaped field effect transistor with different substrate orientations
Open the PDF for Hot carrier degradation in Hf Si O N ∕ Ti N fin shaped field effect transistor with different substrate orientations in another window
Journal Articles

Stable tungsten disilicide contacts for surface and thin film resistivity measurements

G. Jnawali, F.-J. Meyer zu Heringdorf, D. Wall, S. Sindermann, M. Horn-von Hoegen
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 180–183 (2009)
https://doi.org/10.1116/1.3071851
Published: February 2009
View article titled, Stable tungsten disilicide contacts for surface and thin film resistivity measurements
Open the PDF for Stable tungsten disilicide contacts for surface and thin film resistivity measurements in another window
Journal Articles

Nickel and nickel silicide Schottky barrier contacts to n -type silicon nanowires

S. M. Woodruff, N. S. Dellas, B. Z. Liu, S. M. Eichfeld, T. S. Mayer, J. M. Redwing, S. E. Mohney
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 1592–1596 (2008)
https://doi.org/10.1116/1.2939256
Published: August 2008
View article titled, Nickel and nickel silicide Schottky barrier contacts to n -type silicon nanowires
Open the PDF for Nickel and nickel silicide Schottky barrier contacts to n -type silicon nanowires in another window
Journal Articles

Interfacial and electrical properties of Zr x Ti 1 − x O 4   ( x = 0.66 ) films deposited by liquid-delivery metal organic chemical vapor deposition to be used as high- k gate dielectric

B. S. Sahu, S. V. N. Pammi, Nak-Jin Seong, Soon-Gil Yoon
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 1338–1343 (2008)
https://doi.org/10.1116/1.2945302
Published: August 2008
View article titled, Interfacial and electrical properties of Zr x Ti 1 − x O 4   ( x = 0.66 ) films deposited by liquid-delivery metal organic chemical vapor deposition to be used as high- k gate dielectric
Open the PDF for Interfacial and electrical properties of Zr x Ti 1 − x O 4   ( x = 0.66 ) films deposited by liquid-delivery metal organic chemical vapor deposition to be used as high- k gate dielectric in another window
Journal Articles

Ti ∕ Ni bilayer Ohmic contact on 4 H - Si C

Takasumi Ohyanagi, Yasuo Onose, Atsuo Watanabe
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 1359–1362 (2008)
https://doi.org/10.1116/1.2949116
Published: August 2008
View article titled, Ti ∕ Ni bilayer Ohmic contact on 4 H - Si C
Open the PDF for Ti ∕ Ni bilayer Ohmic contact on 4 H - Si C in another window
Journal Articles

Erbium silicide formation and its contact properties on Si(100)

W. Huang, G. P. Ru, Y. L. Jiang, X. P. Qu, B. Z. Li, R. Liu, F. Lu
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 164–170 (2008)
https://doi.org/10.1116/1.2831485
Published: January 2008
View article titled, Erbium silicide formation and its contact properties on Si(100)
Open the PDF for Erbium silicide formation and its contact properties on Si(100) in another window
Journal Articles

Analysis of temperature-dependent barrier heights in erbium-silicided Schottky diodes

Myungsim Jun, Moongyu Jang, Yarkeon Kim, Cheljong Choi, Taeyoub Kim, Soonyoung Oh, Seongjae Lee
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 137–140 (2008)
https://doi.org/10.1116/1.2825172
Published: January 2008
View article titled, Analysis of temperature-dependent barrier heights in erbium-silicided Schottky diodes
Open the PDF for Analysis of temperature-dependent barrier heights in erbium-silicided Schottky diodes in another window
Journal Articles

Influence of hydrogen plasma surface treatment of Si substrate on nickel silicide formation

Aniruddha Vengurlekar, Satheesh Balasubramanian, S. Ashok, David Theodore, Dongzhi Chi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 24, 1449–1454 (2006)
https://doi.org/10.1116/1.2200373
Published: May 2006
View article titled, Influence of hydrogen plasma surface treatment of Si substrate on nickel silicide formation
Open the PDF for Influence of hydrogen plasma surface treatment of Si substrate on nickel silicide formation in another window
Journal Articles

Annealing effect on the surface plasmon resonance absorption of a Ti – Si O 2 nanoparticle composite

J. P. Zhao, Z. Y. Chen, X. J. Cai, J. W. Rabalais
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 24, 1104–1108 (2006)
https://doi.org/10.1116/1.2188410
Published: April 2006
View article titled, Annealing effect on the surface plasmon resonance absorption of a Ti – Si O 2 nanoparticle composite
Open the PDF for Annealing effect on the surface plasmon resonance absorption of a Ti – Si O 2 nanoparticle composite in another window
Journal Articles

Photoelectron spectroscopic analysis of Hf-silicate/ Si O 2 ∕ Si stacks deposited by atomic layer chemical vapor deposition

Jaehyun Kim, Kijung Yong
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 24, 1147–1150 (2006)
https://doi.org/10.1116/1.2190656
Published: April 2006
View article titled, Photoelectron spectroscopic analysis of Hf-silicate/ Si O 2 ∕ Si stacks deposited by atomic layer chemical vapor deposition
Open the PDF for Photoelectron spectroscopic analysis of Hf-silicate/ Si O 2 ∕ Si stacks deposited by atomic layer chemical vapor deposition in another window