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Journal Articles

Role of the oxidation conditions on the orientation of TiNxOy grown by atomic layer deposition: Impact on the optical and electrical properties

Kou Ihara, Julien Cardin, Maxime Leménager, Xavier Portier, Hind Bousbia, Christophe Labbé
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 054001 (2024)
https://doi.org/10.1116/6.0003646
Published: August 2024
View article titled, Role of the oxidation conditions on the orientation of TiN<sub>x</sub>O<sub>y</sub> grown by atomic layer deposition: Impact on the optical and electrical properties
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Journal Articles

Fabrication of silicon sharp nanocones using dry etch with periodic oxygen plasma shrinking and wet etch

Renqiang Kang, Aixi Pan, Bo Cui
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 033002 (2024)
https://doi.org/10.1116/6.0003516
Published: April 2024
View article titled, Fabrication of silicon sharp nanocones using dry etch with periodic oxygen plasma shrinking and wet etch
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Journal Articles

Surface and functional characterization of nanostructured thin films for environmental remediation

Enrica Maria Malannata, Alessandro Auditore, Antonino Licciardello
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 044008 (2023)
https://doi.org/10.1116/6.0002611
Published: June 2023
View article titled, Surface and functional characterization of nanostructured thin films for environmental remediation
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Includes: Supplementary data
Journal Articles

Characterization of GeO2 films formed on Ge substrate using high pressure oxidation

Juhyun Bae, Ilsub Chung
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 39, 043201 (2021)
https://doi.org/10.1116/6.0000963
Published: June 2021
View article titled, Characterization of GeO<sub>2</sub> films formed on Ge substrate using high pressure oxidation
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Journal Articles

Absorption, discharge, and internal partitioning behavior of hydrogen in the tantalum and tantalum oxide system investigated by in situ oxidation SIMS and ab initio calculations

Tsutomu Asakawa, Daisuke Nagano, Hiromu Miyazawa, Ian Clark
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 38, 034008 (2020)
https://doi.org/10.1116/6.0000100
Published: April 2020
View article titled, Absorption, discharge, and internal partitioning behavior of hydrogen in the tantalum and tantalum oxide system investigated by <em>in situ</em> oxidation SIMS and <em>ab initio</em> calculations
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Journal Articles

In situ spectroelectrochemical ellipsometry using super continuum white laser: Study of the anodization of magnesium alloy

Alexandre Zimmer, Delphine Veys-Renaux, Laurent Broch, Nicolas Stein, Emmanuel Rocca
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 37, 062911 (2019)
https://doi.org/10.1116/1.5122320
Published: October 2019
View article titled, <em>In situ</em> spectroelectrochemical ellipsometry using super continuum white laser: Study of the anodization of magnesium alloy
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Includes: Supplementary data
Journal Articles

Use of TRIDYN and medium energy ion scattering to calibrate an industrial arsenic plasma doping process

Jonathan England, Jaap Van den Berg, Andrew Rossall
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 37, 031206 (2019)
https://doi.org/10.1116/1.5088958
Published: April 2019
View article titled, Use of TRIDYN and medium energy ion scattering to calibrate an industrial arsenic plasma doping process
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Journal Articles

Analysis of conductive filament density in resistive random access memories: a 3D kinetic Monte Carlo approach

Samuel Aldana, Pedro García-Fernández, Rocío Romero-Zaliz, Francisco Jiménez-Molinos, Francisco Gómez-Campos, Juan Bautista Roldán
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 062201 (2018)
https://doi.org/10.1116/1.5049213
Published: October 2018
View article titled, Analysis of conductive filament density in resistive random access memories: a 3D kinetic Monte Carlo approach
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Journal Articles

Interface states reduction in atomic layer deposited TiN/ZrO2/Al2O3/Ge gate stacks

Lakshmi Ganapathi Kolla, Yiming Ding, Durga Misra, Navakanta Bhat
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 021201 (2018)
https://doi.org/10.1116/1.5006789
Published: January 2018
View article titled, Interface states reduction in atomic layer deposited TiN/ZrO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/Ge gate stacks
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Journal Articles

Electrical characterization of dry and wet processed interface layer in Ge/High-K devices

Y. M. Ding, D. Misra, M. N. Bhuyian, Kandabara Tapily, Robert D. Clark, Steve Consiglio, Cory S. Wajda, Gert J. Leusink
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 021203 (2016)
https://doi.org/10.1116/1.4943559
Published: March 2016
View article titled, Electrical characterization of dry and wet processed interface layer in Ge/High-K devices
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Journal Articles

Carbon contamination and oxidation of Au surfaces under extreme ultraviolet radiation: An x-ray photoelectron spectroscopy study

Al-Montaser Bellah Al-Ajlony, Aloke Kanjilal, Sivanandan S. Harilal, Ahmed Hassanein
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 30, 041603 (2012)
https://doi.org/10.1116/1.4737160
Published: July 2012
View article titled, Carbon contamination and oxidation of Au surfaces under extreme ultraviolet radiation: An x-ray photoelectron spectroscopy study
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Journal Articles

Probing temporal evolution of extreme ultraviolet assisted contamination on Ru mirror by x-ray photoelectron spectroscopy

A. Al-Ajlony, A. Kanjilal, M. Catalfano, M. Fields, S. S. Harilal, A. Hassanein, B. Rice
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 30, 021601 (2012)
https://doi.org/10.1116/1.3680122
Published: February 2012
View article titled, Probing temporal evolution of extreme ultraviolet assisted contamination on Ru mirror by x-ray photoelectron spectroscopy
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Journal Articles

Geometry enhanced asymmetric rectifying tunneling diodes

Kwangsik Choi, Geunmin Ryu, Filiz Yesilkoy, Athanasios Chryssis, Neil Goldsman, Mario Dagenais, Martin Peckerar
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, C6O50–C6O55 (2010)
https://doi.org/10.1116/1.3501350
Published: November 2010
View article titled, Geometry enhanced asymmetric rectifying tunneling diodes
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Journal Articles

Removing GaAs substrate by nitric acid solution

C. C. Li, B. L. Guan, D. X. Chuai, X. Guo, G. D. Shen
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, 635–637 (2010)
https://doi.org/10.1116/1.3431082
Published: May 2010
View article titled, Removing GaAs substrate by nitric acid solution
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Journal Articles

Development of dry-processed silicon nanodot planar cold cathode and its electron emission properties

Yoshiyuki Hirano, Masakazu Nanba, Norifumi Egami, Susumu Yamazaki, Nobuyoshi Koshida
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, C2B6–C2B10 (2010)
https://doi.org/10.1116/1.3275746
Published: March 2010
View article titled, Development of dry-processed silicon nanodot planar cold cathode and its electron emission properties
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Journal Articles

Improvement of scanning probe microscopy local oxidation nanolithography

Shinya Nishimura, Takashi Toyofuku, Kazuya Miyashita, Yasushi Takemura, Jun-ichi Shirakashi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 948–952 (2009)
https://doi.org/10.1116/1.3093907
Published: April 2009
View article titled, Improvement of scanning probe microscopy local oxidation nanolithography
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Journal Articles

Initial oxidation of Si(110) as studied by real-time synchrotron-radiation x-ray photomission spectroscopy

M. Suemitsu, Y. Yamamoto, H. Togashi, Y. Enta, A. Yoshigoe, Y. Teraoka
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 547–550 (2009)
https://doi.org/10.1116/1.3021032
Published: February 2009
View article titled, Initial oxidation of Si(110) as studied by real-time synchrotron-radiation x-ray photomission spectroscopy
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Journal Articles

Different mechanism to explain the 1 ∕ f noise in n - and p -SOI-MOS transistors fabricated on (110) and (100) silicon-oriented wafers

Philippe Gaubert, Akinobu Teramoto, Weitao Cheng, Tatsufumi Hamada, Tadahiro Ohmi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 394–401 (2009)
https://doi.org/10.1116/1.3054280
Published: February 2009
View article titled, Different mechanism to explain the 1 ∕ f noise in n - and p -SOI-MOS transistors fabricated on (110) and (100) silicon-oriented wafers
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Journal Articles

Study of overlay metrology in atomic force microscope lithography (overlaying lithography with atomic force microscope)

Xiaona Li, Li Han, Wenqi Gu
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 24, 3101–3104 (2006)
https://doi.org/10.1116/1.2375087
Published: December 2006
View article titled, Study of overlay metrology in atomic force microscope lithography (overlaying lithography with atomic force microscope)
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Journal Articles

Chemical bonding and interdiffusion in scaled down Si O 2 ∕ Si 3 N 4 ∕ Si O 2 stacks with top oxide formed by thermal ed copyoxidation

Meirav Saraf, Rachel Edrei, Roza Akhvlediani, Yakov Roizin, Ruth Shima-Edelstein, Alon Hoffman
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 24, 1716–1723 (2006)
https://doi.org/10.1116/1.2209990
Published: June 2006
View article titled, Chemical bonding and interdiffusion in scaled down Si O 2 ∕ Si 3 N 4 ∕ Si O 2 stacks with top oxide formed by thermal ed copyoxidation
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