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Journal Articles

Understanding plasma enhanced chemical vapor deposition mechanisms in tetraethoxysilane-based plasma

Hu Li, Koichi Ishii, Shun Sasaki, Mao Kamiyama, Akinori Oda, Kazuki Denpoh
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 022208 (2023)
https://doi.org/10.1116/6.0002409
Published: March 2023
View article titled, Understanding plasma enhanced chemical vapor deposition mechanisms in tetraethoxysilane-based plasma
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Includes: Supplementary data
Journal Articles

Zr-Al 16 wt. % and Na2CrO4 composite particles used for Na dispenser and its reaction kinetic

Wentao Song, Chao Zhang, Ruibin Ma, Ziyuan Zhong, Heng Zhao, Wenhuai Tian
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 054201 (2022)
https://doi.org/10.1116/6.0001863
Published: August 2022
View article titled, Zr-Al 16 wt. % and Na<sub>2</sub>CrO<sub>4</sub> composite particles used for Na dispenser and its reaction kinetic
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Includes: Supplementary data
Journal Articles

Numerical analysis of pattern shape deformation in UV imprint considering thermal deformation with UV shrinkage and curing

Yuki Onishi, Ryunosuke Yamashita, Kenji Amaya, Yoshihiko Hirai
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 39, 024002 (2021)
https://doi.org/10.1116/6.0000817
Published: February 2021
View article titled, Numerical analysis of pattern shape deformation in UV imprint considering thermal deformation with UV shrinkage and curing
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Journal Articles

Impact of preparation conditions on the properties of materials for replica stamps

Marc Papenheim, Wolfgang Eidemüller, Christian Steinberg, Andre Mayer, Hella-Christin Scheer
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 06G305 (2017)
https://doi.org/10.1116/1.4991868
Published: October 2017
View article titled, Impact of preparation conditions on the properties of materials for replica stamps
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Journal Articles

Isotope effects on plasma species of Ar/H2/D2 plasmas

Nick Fox-Lyon, Gottlieb S. Oehrlein
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 041206 (2014)
https://doi.org/10.1116/1.4889858
Published: July 2014
View article titled, Isotope effects on plasma species of Ar/H<sub>2</sub>/D<sub>2</sub> plasmas
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Journal Articles

Process effects of copper film over a step etched with a plasma-based process

Chi-Chou Lin, Yue Kuo
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 30, 021204 (2012)
https://doi.org/10.1116/1.3692251
Published: March 2012
View article titled, Process effects of copper film over a step etched with a plasma-based process
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Journal Articles

Probing temporal evolution of extreme ultraviolet assisted contamination on Ru mirror by x-ray photoelectron spectroscopy

A. Al-Ajlony, A. Kanjilal, M. Catalfano, M. Fields, S. S. Harilal, A. Hassanein, B. Rice
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 30, 021601 (2012)
https://doi.org/10.1116/1.3680122
Published: February 2012
View article titled, Probing temporal evolution of extreme ultraviolet assisted contamination on Ru mirror by x-ray photoelectron spectroscopy
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Journal Articles

In situ study of hydrogen silsesquioxane dissolution rate in salty and electrochemical developers

Katherine J. Harry, Sebastian Strobel, Joel K. W. Yang, Huigao Duan, Karl K. Berggren
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 06FJ01 (2011)
https://doi.org/10.1116/1.3644339
Published: September 2011
View article titled, <em>In situ</em> study of hydrogen silsesquioxane dissolution rate in salty and electrochemical developers
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Journal Articles

Multistage etching process for microscopically smooth tellurite glass surfaces in optical fibers

Aidong Zhang, Aoxiang Lin, Jau-Sheng Wang, Jean Toulouse
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, 682–686 (2010)
https://doi.org/10.1116/1.3437017
Published: June 2010
View article titled, Multistage etching process for microscopically smooth tellurite glass surfaces in optical fibers
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Journal Articles

Contributions of resist polymers to innate material roughness

Theodore H. Fedynyshyn, David K. Astolfi, Russell B. Goodman, Susan Cann, Jeanette Roberts
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 2281–2289 (2008)
https://doi.org/10.1116/1.2993259
Published: December 2008
View article titled, Contributions of resist polymers to innate material roughness
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Journal Articles

Effect of microstructure on deprotection kinetics in photoresist

David S. Fryer, Vivek Singh, Srinivas B. Bollepalli, Alex A. Granovsky
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 2311–2315 (2008)
https://doi.org/10.1116/1.2998700
Published: December 2008
View article titled, Effect of microstructure on deprotection kinetics in photoresist
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Journal Articles

Observation and control of electrochemical etching effects in the fabrication of In As ∕ Al Sb ∕ Ga Sb heterostructure devices

Ning Su, Yong Tang, Ze Zhang, T. F. Kuech, P. Fay
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 1025–1029 (2008)
https://doi.org/10.1116/1.2924328
Published: May 2008
View article titled, Observation and control of electrochemical etching effects in the fabrication of In As ∕ Al Sb ∕ Ga Sb heterostructure devices
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Journal Articles

Using high-contrast salty development of hydrogen silsesquioxane for sub- 10 ‐ nm half-pitch lithography

Joel K. W. Yang, Karl K. Berggren
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 25, 2025–2029 (2007)
https://doi.org/10.1116/1.2801881
Published: December 2007
View article titled, Using high-contrast salty development of hydrogen silsesquioxane for sub- 10 ‐ nm half-pitch lithography
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Journal Articles

Initial stages of GaP heteroepitaxy on nanoscopically roughened (001)Si

X. Liu, I. K. Kim, D. E. Aspnes
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 25, 1448–1452 (2007)
https://doi.org/10.1116/1.2750345
Published: July 2007
View article titled, Initial stages of GaP heteroepitaxy on nanoscopically roughened (001)Si
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Journal Articles

Demonstration of spatially programmable chemical vapor deposition: Model-based uniformity∕nonuniformity control

Ramaswamy Sreenivasan, Raymond A. Adomaitis, Gary W. Rubloff
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 24, 2706–2715 (2006)
https://doi.org/10.1116/1.2359735
Published: November 2006
View article titled, Demonstration of spatially programmable chemical vapor deposition: Model-based uniformity∕nonuniformity control
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Journal Articles

Effects of various plasma pretreatments on 193 nm photoresist and linewidth roughness after etching

Myeong-Cheol Kim, Denis Shamiryan, Youngjae Jung, Werner Boullart, Chang-Jin Kang, Han-Ku Cho
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 24, 2645–2652 (2006)
https://doi.org/10.1116/1.2366616
Published: November 2006
View article titled, Effects of various plasma pretreatments on 193 nm photoresist and linewidth roughness after etching
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Journal Articles

Oxidation of silicon nanowires

D. Shir, B. Z. Liu, A. M. Mohammad, K. K. Lew, S. E. Mohney
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 24, 1333–1336 (2006)
https://doi.org/10.1116/1.2198847
Published: May 2006
View article titled, Oxidation of silicon nanowires
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Journal Articles

Modeling the suppression of boron diffusion in Si ∕ Si Ge due to carbon incorporation

Samer Rizk, Yaser M. Haddara, A. Sibaja-Hernandez
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 24, 1365–1370 (2006)
https://doi.org/10.1116/1.2198858
Published: May 2006
View article titled, Modeling the suppression of boron diffusion in Si ∕ Si Ge due to carbon incorporation
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Journal Articles

Modeling of B diffusion in the presence of Ge

Ljubo Radic, Antonio F. Saavedra, Kevin S. Jones, Mark E. Law
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 24, 478–481 (2006)
https://doi.org/10.1116/1.2151905
Published: January 2006
View article titled, Modeling of B diffusion in the presence of Ge
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Journal Articles

Maximum achievable aspect ratio in deep reactive ion etching of silicon due to aspect ratio dependent transport and the microloading effect

Junghoon Yeom, Yan Wu, John C. Selby, Mark A. Shannon
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 23, 2319–2329 (2005)
https://doi.org/10.1116/1.2101678
Published: October 2005
View article titled, Maximum achievable aspect ratio in deep reactive ion etching of silicon due to aspect ratio dependent transport and the microloading effect
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