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Journal Articles

New method of fabrication of suspended metallic single electron transistor (SET)

Mohammad Istiaque Rahaman, G. P. Szakmany, A. O. Orlov, G. L. Snider

J. Vac. Sci. Technol. B 42, 013201 (2024)

https://doi.org/10.1116/6.0003025

Published: January 2024

View article titled, New method of fabrication of suspended metallic single electron transistor (SET)

Journal Articles

Effects of various bias and temperature stresses on low-frequency noise properties of amorphous InGaZnO thin-film transistors

Hee-Joong Kim, Chan-Yong Jeong, Sang-Dae Bae, Hyuck-In Kwon

J. Vac. Sci. Technol. B 35, 010601 (2017)

https://doi.org/10.1116/1.4972524

Published: December 2016

View article titled, Effects of various bias and temperature stresses on low-frequency noise properties of amorphous InGaZnO thin-film transistors

Journal Articles

Novel method for fabrication of nanoscale single-electron transistors: Electron beam induced deposition of Pt and atomic layer deposition of tunnel barriers

Hubert C. George, Tatyana A. Orlova, Alexei O. Orlov, Gregory L. Snider

J. Vac. Sci. Technol. B 29, 06FB01 (2011)

https://doi.org/10.1116/1.3640752

Published: September 2011

View article titled, Novel method for fabrication of nanoscale single-electron transistors: Electron beam induced deposition of Pt and atomic layer deposition of tunnel barriers