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Journal Articles

Dimerization of 4-cyano-4′-n-pentylbiphenyl in vacuum and under constant electric field

Tatiana Andreeva, Marina Bedrina, Nikolay Egorov
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 03D102 (2015)
https://doi.org/10.1116/1.4917491
Published: May 2015
View article titled, Dimerization of 4-cyano-4′-<em>n</em>-pentylbiphenyl in vacuum and under constant electric field
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Journal Articles

Patterned atomic layer epitaxy of Si/Si(001):H

James H. G. Owen, Joshua Ballard, John N. Randall, Justin Alexander, James R. Von Ehr
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 06F201 (2011)
https://doi.org/10.1116/1.3628673
Published: August 2011
View article titled, Patterned atomic layer epitaxy of Si/Si(001):H
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Journal Articles

Simultaneous observation of surface topography and elasticity at atomic scale by multifrequency frequency modulation atomic force microscopy

Yoshitaka Naitoh, Zongmin Ma, Yan Jun Li, Masami Kageshima, Yasuhiro Sugawara
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, 1210–1214 (2010)
https://doi.org/10.1116/1.3503611
Published: October 2010
View article titled, Simultaneous observation of surface topography and elasticity at atomic scale by multifrequency frequency modulation atomic force microscopy
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Journal Articles

Atomic scale Pb chains on Si(100)

Zhen-Chao Dong, Daisuke Fujita, Taro Yakabe, Hanyi Sheng, Hitoshi Nejoh
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 18, 2371–2376 (2000)
https://doi.org/10.1116/1.1288198
Published: September 2000
View article titled, Atomic scale Pb chains on Si(100)
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Journal Articles

Atomic arrangement at the CuBr(100) surface and CuBr/GaAs(100) interface: Application of the electron counting method

U. M. Dassanayake, W. Chen, A. Kahn
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 11, 1467–1471 (1993)
https://doi.org/10.1116/1.586914
Published: July 1993
View article titled, Atomic arrangement at the CuBr(100) surface and CuBr/GaAs(100) interface: Application of the electron counting method
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Journal Articles

Generation of fast‐switching As2 and P2 beams from AsH3 and PH3 for gas‐source molecular‐beam epitaxial growth of InGaAs/InP multiple quantum well and superlattice structures

S. L. Jackson, J. N. Baillargeon, A. P. Curtis, X. Liu, J. E. Baker, J. I. Malin, K. C. Hsieh, S. G. Bishop, K. Y. Cheng, G. E. Stillman
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 11, 1045–1049 (1993)
https://doi.org/10.1116/1.587005
Published: May 1993
View article titled, Generation of fast‐switching As<sub>2</sub> and P<sub>2</sub> beams from AsH<sub>3</sub> and PH<sub>3</sub> for gas‐source molecular‐beam epitaxial growth of InGaAs/InP multiple quantum well and superlattice structures
Open the PDF for Generation of fast‐switching As<sub>2</sub> and P<sub>2</sub> beams from AsH<sub>3</sub> and PH<sub>3</sub> for gas‐source molecular‐beam epitaxial growth of InGaAs/InP multiple quantum well and superlattice structures in another window
Journal Articles

Surface reconstructions and surface energies of monolayer‐coverage cation‐terminated Ga0.5In0.5P(001) surfaces

Sverre Froyen, Alex Zunger
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 9, 2176–2181 (1991)
https://doi.org/10.1116/1.585760
Published: July 1991
View article titled, Surface reconstructions and surface energies of monolayer‐coverage cation‐terminated Ga<sub>0.5</sub>In<sub>0.5</sub>P(001) surfaces
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Journal Articles

Electronic properties of the reconstructed Si(111) 7×7 surface

Yia‐Chung Chang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 1, 709–713 (1983)
https://doi.org/10.1116/1.582585
Published: July 1983
View article titled, Electronic properties of the reconstructed Si(111) 7×7 surface
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