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Journal Articles

Fluorine clustering and diffusion in silicon: Ab initio calculations and kinetic Monte Carlo model

Kilian Vollenweider, Beat Sahli, Nikolas Zographos, Christoph Zechner
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, C1G1–C1G6 (2010)
https://doi.org/10.1116/1.3253328
Published: March 2010
View article titled, Fluorine clustering and diffusion in silicon: <em>Ab initio</em> calculations and kinetic Monte Carlo model
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Journal Articles

Defect engineering: An approach on ultrashallow junction in silicon

Lin Shao, Xinming Lu, Xuemei Wang, Irene Rusakova, Jiarui Liu, Wei-Kan Chu
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 20, 419–421 (2002)
https://doi.org/10.1116/1.1424283
Published: January 2002
View article titled, Defect engineering: An approach on ultrashallow junction in silicon
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Journal Articles

Nitrogen redistribution in SiO2 under ion bombardment

Indrajit Banerjee, Dimitry Kuzminov
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 12, 205–208 (1994)
https://doi.org/10.1116/1.587183
Published: January 1994
View article titled, Nitrogen redistribution in SiO<sub>2</sub> under ion bombardment
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