1-20 of 129
Diffusion barriers
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

AlGe wafer bonding in ultra-high vacuum environment

Thomas Stöttinger, Bernhard Rebhan, Kurt Hingerl
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 042802 (2023)
https://doi.org/10.1116/6.0002539
Published: June 2023
View article titled, AlGe wafer bonding in ultra-high vacuum environment
Open the PDF for AlGe wafer bonding in ultra-high vacuum environment in another window
Journal Articles

Quantitative thermodynamic investigation of thermal stability and diffusion barrier property of an amorphous cobalt alloy interlayer

Yuki Yamada, Masataka Yahagi, Junichi Koike
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 013204 (2022)
https://doi.org/10.1116/6.0001536
Published: January 2022
View article titled, Quantitative thermodynamic investigation of thermal stability and diffusion barrier property of an amorphous cobalt alloy interlayer
Open the PDF for Quantitative thermodynamic investigation of thermal stability and diffusion barrier property of an amorphous cobalt alloy interlayer in another window
Journal Articles

Synchrotron radiation study of metallic titanium deposited on dielectric substrates

Justin Bogan, Venkateswaran Selvaraju, Anita Brady-Boyd, Greg Hughes, Robert O'Connor
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 040602 (2018)
https://doi.org/10.1116/1.5036943
Published: June 2018
View article titled, Synchrotron radiation study of metallic titanium deposited on dielectric substrates
Open the PDF for Synchrotron radiation study of metallic titanium deposited on dielectric substrates in another window
Journal Articles

Direct formation of graphene on dielectric substrate: Controlling the location of graphene formation adopting carbon diffusion barrier

Ki-Ju Kim, Seong-Yong Cho, Hyun-Mi Kim, Ki-Bum Kim
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 021802 (2018)
https://doi.org/10.1116/1.5016591
Published: February 2018
View article titled, Direct formation of graphene on dielectric substrate: Controlling the location of graphene formation adopting carbon diffusion barrier
Open the PDF for Direct formation of graphene on dielectric substrate: Controlling the location of graphene formation adopting carbon diffusion barrier in another window
Journal Articles

Effects of aging on nanoscale planar metal-insulator-metal tunnel junctions

Gabriel Droulers, Serge Ecoffey, Michel Pioro-Ladrière, Dominique Drouin
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 062203 (2016)
https://doi.org/10.1116/1.4967786
Published: November 2016
View article titled, Effects of aging on nanoscale planar metal-insulator-metal tunnel junctions
Open the PDF for Effects of aging on nanoscale planar metal-insulator-metal tunnel junctions in another window
Journal Articles

Replication of nanopits and nanopillars by roll-to-roll extrusion coating using a structured cooling roll

Swathi Murthy, Henrik Pranov, Henrik C. Pedersen, Rafael Taboryski
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 06KM02 (2016)
https://doi.org/10.1116/1.4967217
Published: November 2016
View article titled, Replication of nanopits and nanopillars by roll-to-roll extrusion coating using a structured cooling roll
Open the PDF for Replication of nanopits and nanopillars by roll-to-roll extrusion coating using a structured cooling roll in another window
Journal Articles

Aluminum-based contacts for use in GaSb-based diode lasers

Thanh-Nam Tran, Saroj Kumar Patra, Magnus Breivik, Bjørn-Ove Fimland
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 061207 (2016)
https://doi.org/10.1116/1.4967300
Published: November 2016
View article titled, Aluminum-based contacts for use in GaSb-based diode lasers
Open the PDF for Aluminum-based contacts for use in GaSb-based diode lasers in another window
Journal Articles

TiN diffusion barrier failure by the formation of Cu3Si investigated by electron microscopy and atom probe tomography

Marlene Mühlbacher, Grzegorz Greczynski, Bernhard Sartory, Francisca Mendez-Martin, Nina Schalk, Jun Lu, Lars Hultman, Christian Mitterer
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 022202 (2016)
https://doi.org/10.1116/1.4942003
Published: February 2016
View article titled, TiN diffusion barrier failure by the formation of Cu<sub>3</sub>Si investigated by electron microscopy and atom probe tomography
Open the PDF for TiN diffusion barrier failure by the formation of Cu<sub>3</sub>Si investigated by electron microscopy and atom probe tomography in another window
Journal Articles

Improved performance of InGaN/GaN flip-chip light-emitting diodes through the use of robust Ni/Ag/TiW mirror contacts

Namig Hasanov, Binbin Zhu, Vijay Kumar Sharma, Shunpeng Lu, Yiping Zhang, Wei Liu, Swee Tiam Tan, Xiao Wei Sun, Hilmi Volkan Demir
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 011209 (2016)
https://doi.org/10.1116/1.4939186
Published: December 2015
View article titled, Improved performance of InGaN/GaN flip-chip light-emitting diodes through the use of robust Ni/Ag/TiW mirror contacts
Open the PDF for Improved performance of InGaN/GaN flip-chip light-emitting diodes through the use of robust Ni/Ag/TiW mirror contacts in another window
Journal Articles

Demonstration of electrical connectivity between self-assembled structures

Madhav Rao, John C. Lusth, Susan L. Burkett
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 31, 032002 (2013)
https://doi.org/10.1116/1.4802914
Published: May 2013
View article titled, Demonstration of electrical connectivity between self-assembled structures
Open the PDF for Demonstration of electrical connectivity between self-assembled structures in another window
Journal Articles

Thermal stability of Ti, Pt, and Ru interfacial layers between seedless copper and a tantalum diffusion barrier

Xin Liu, Sean W. King, Robert J. Nemanich
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 31, 022205 (2013)
https://doi.org/10.1116/1.4792523
Published: February 2013
View article titled, Thermal stability of Ti, Pt, and Ru interfacial layers between seedless copper and a tantalum diffusion barrier
Open the PDF for Thermal stability of Ti, Pt, and Ru interfacial layers between seedless copper and a tantalum diffusion barrier in another window
Journal Articles

Low-temperature Al–Ge bonding for 3D integration

Filip Crnogorac, Fabian R. W. Pease, Ryan P. Birringer, Reinhold H. Dauskardt
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 30, 06FK01 (2012)
https://doi.org/10.1116/1.4762844
Published: October 2012
View article titled, Low-temperature Al–Ge bonding for 3D integration
Open the PDF for Low-temperature Al–Ge bonding for 3D integration in another window
Journal Articles

Creating nanoscale Ag patterns on the Si(111)–(√3 × √3)R30°-Ag surface via guided self-assembly

Alex Belianinov, Barış Ünal, Michael C. Tringides, Patricia A. Thiel
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 30, 050601 (2012)
https://doi.org/10.1116/1.4738745
Published: July 2012
View article titled, Creating nanoscale Ag patterns on the Si(111)–(√3<em> ×</em> √3)<em>R</em>30°-Ag surface via guided self-assembly
Open the PDF for Creating nanoscale Ag patterns on the Si(111)–(√3<em> ×</em> √3)<em>R</em>30°-Ag surface via guided self-assembly in another window
Journal Articles

Graphene as a diffusion barrier for Al and Ni/Au contacts on silicon

Hong-Yeol Kim, Chongmin Lee, Jihyun Kim, Fan Ren, S. J. Pearton
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 30, 030602 (2012)
https://doi.org/10.1116/1.3701711
Published: April 2012
View article titled, Graphene as a diffusion barrier for Al and Ni/Au contacts on silicon
Open the PDF for Graphene as a diffusion barrier for Al and Ni/Au contacts on silicon in another window
Journal Articles

Fabrication and characterization of cesium-based photocathodes for free electron lasers

Saara A. Khan, Eric J. Montgomery, Blake C. Riddick, Patrick O’Shea
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 30, 031207 (2012)
https://doi.org/10.1116/1.3696731
Published: April 2012
View article titled, Fabrication and characterization of cesium-based photocathodes for free electron lasers
Open the PDF for Fabrication and characterization of cesium-based photocathodes for free electron lasers in another window
Journal Articles

Low resistance and thermally stable Ti/Al-based Ohmic contacts to N-face n-GaN for vertical light-emitting diodes by using Ti(Ga) solid solution and TiN layers

Joon-Woo Jeon, Woong-Sun Yum, Tae-Yeon Seong, Sang Youl Lee, June-O Song
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 30, 020601 (2012)
https://doi.org/10.1116/1.3678490
Published: January 2012
View article titled, Low resistance and thermally stable Ti/Al-based Ohmic contacts to N-face n-GaN for vertical light-emitting diodes by using Ti(Ga) solid solution and TiN layers
Open the PDF for Low resistance and thermally stable Ti/Al-based Ohmic contacts to N-face n-GaN for vertical light-emitting diodes by using Ti(Ga) solid solution and TiN layers in another window
Journal Articles

Improved time dependent performance of hydrogen silsesquioxane resist using a spin on top coat

Daron A. Westly, Donald M. Tennant, Yukinori Aida, Hirofumi Ohki, Takashi Ohkubo
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 06FJ02 (2011)
https://doi.org/10.1116/1.3660788
Published: December 2011
View article titled, Improved time dependent performance of hydrogen silsesquioxane resist using a spin on top coat
Open the PDF for Improved time dependent performance of hydrogen silsesquioxane resist using a spin on top coat in another window
Journal Articles

Patterned atomic layer epitaxy of Si/Si(001):H

James H. G. Owen, Joshua Ballard, John N. Randall, Justin Alexander, James R. Von Ehr
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 06F201 (2011)
https://doi.org/10.1116/1.3628673
Published: August 2011
View article titled, Patterned atomic layer epitaxy of Si/Si(001):H
Open the PDF for Patterned atomic layer epitaxy of Si/Si(001):H in another window
Journal Articles

High quality m-plane GaN grown under nitrogen-rich conditions by plasma assisted molecular beam epitaxy

Marta Sawicka, Anna Feduniewicz-Żmuda, Henryk Turski, Marcin Siekacz, Szymon Grzanka, Marcin Kryśko, Igor Dzięcielewski, Izabella Grzegory, Czesław Skierbiszewski
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 03C135 (2011)
https://doi.org/10.1116/1.3589228
Published: May 2011
View article titled, High quality m-plane GaN grown under nitrogen-rich conditions by plasma assisted molecular beam epitaxy
Open the PDF for High quality m-plane GaN grown under nitrogen-rich conditions by plasma assisted molecular beam epitaxy in another window
Journal Articles

Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers

Tonmoy Chakraborty, Daniel Greenslit, Eric T. Eisenbraun
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 030605 (2011)
https://doi.org/10.1116/1.3585664
Published: May 2011
View article titled, Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
Open the PDF for Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers in another window