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Journal Articles

Emission enhancement of GaN field emitter arrays in an N2 environment

Reza Farsad Asadi, Tao Zheng, Pao-Chuan Shih, Tomás Palacios, Akintunde I. Akinwande, Bruce Gnade
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 044004 (2024)
https://doi.org/10.1116/6.0003704
Published: July 2024
View article titled, Emission enhancement of GaN field emitter arrays in an N<sub>2</sub> environment
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Journal Articles

Degradation of GaN field emitter arrays induced by O2 exposure

Editor’s Pick
Reza Farsad Asadi, Tao Zheng, Pao-Chuan Shih, Tomás Palacios, Akintunde I. Akinwande, Bruce Gnade
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 014001 (2024)
https://doi.org/10.1116/6.0003314
Published: January 2024
View article titled, Degradation of GaN field emitter arrays induced by O<sub>2</sub> exposure
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Journal Articles

Effect of rapid thermal annealing on the mechanical stress and physico-chemical properties in plasma enhanced atomic layer deposited silicon nitride thin films

Antony Premkumar Peter, Alfonso Sepulveda Marquez, Johan Meersschaut, Praveen Dara, Timothee Blanquart, Takayama Tomomi, Ebisudani Taishi, Shiba Elichiro, Yosuke Kimura, Sander van Gompel, Pierre Morin
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 054001 (2022)
https://doi.org/10.1116/6.0001922
Published: August 2022
View article titled, Effect of rapid thermal annealing on the mechanical stress and physico-chemical properties in plasma enhanced atomic layer deposited silicon nitride thin films
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Journal Articles

Hollow cathode enhanced capacitively coupled plasmas in Ar/N2/H2 mixtures and implications for plasma enhanced ALD

Editor’s Pick
David R. Boris, Michael J. Johnson, Charles R. Eddy, Jr., Scott G. Walton
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 044002 (2022)
https://doi.org/10.1116/6.0001840
Published: July 2022
View article titled, Hollow cathode enhanced capacitively coupled plasmas in Ar/N<sub>2</sub>/H<sub>2</sub> mixtures and implications for plasma enhanced ALD
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Journal Articles

Simplified CVD route to near-zero thickness silicon nitride films

Barry Arkles, Chad Brick, Jonathan Goff, Alain E. Kaloyeros
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 040601 (2022)
https://doi.org/10.1116/6.0001820
Published: June 2022
View article titled, Simplified CVD route to near-zero thickness silicon nitride films
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Journal Articles

Fabrication of ultrathin suspended membranes from atomic layer deposition films

Editor’s Pick
Michael J. Elowson, Rohan Dhall, Adam Schwartzberg, Stephanie Y. Chang, Vittoria Tommasini, Sardar B. Alam, Emory M. Chan, Stefano Cabrini, Shaul Aloni
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 023001 (2022)
https://doi.org/10.1116/6.0001309
Published: February 2022
View article titled, Fabrication of ultrathin suspended membranes from atomic layer deposition films
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Includes: Supplementary data
Journal Articles

Enhancement of thermionic emission and conversion characteristics using polarization- and band-engineered n-type AlGaN/GaN cathodes

Shigeya Kimura, Hisashi Yoshida, Hisao Miyazaki, Takuya Fujimoto, Akihisa Ogino
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 39, 062207 (2021)
https://doi.org/10.1116/6.0001357
Published: November 2021
View article titled, Enhancement of thermionic emission and conversion characteristics using polarization- and band-engineered n-type AlGaN/GaN cathodes
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Journal Articles

Systematic study of the outgassing behavior of different ceramic materials

Katharina Battes, Christian Day, Volker Hauer
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 39, 034202 (2021)
https://doi.org/10.1116/6.0000954
Published: April 2021
View article titled, Systematic study of the outgassing behavior of different ceramic materials
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Journal Articles

Surface polarity dependence of thermionic emission and conversion characteristics of n-type GaN cathodes

Shigeya Kimura, Hisashi Yoshida, Hisao Miyazaki, Takuya Fujimoto, Akihisa Ogino
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 39, 014201 (2021)
https://doi.org/10.1116/6.0000710
Published: January 2021
View article titled, Surface polarity dependence of thermionic emission and conversion characteristics of n-type GaN cathodes
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Journal Articles

Photoassisted chemical smoothing of AlGaN surface after laser lift-off

Zhongming Zheng, Hao Long, Samuel Matta, Mathieu Leroux, Julien Brault, Leiying Ying, Zhiwei Zheng, Baoping Zhang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 38, 042207 (2020)
https://doi.org/10.1116/6.0000192
Published: July 2020
View article titled, Photoassisted chemical smoothing of AlGaN surface after laser lift-off
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Journal Articles

Analysis of useful ion yield for the Mg dopant in GaN by quadrupole—SIMS

M. K. Indika Senevirathna, Michael D. Williams, Graham A. Cooke, Alexander Kozhanov, Mark Vernon, Garnett B. Cross
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 38, 034015 (2020)
https://doi.org/10.1116/1.5144500
Published: April 2020
View article titled, Analysis of useful ion yield for the Mg dopant in GaN by quadrupole—SIMS
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Journal Articles

Au-free recessed Ohmic contacts to AlGaN/GaN high electron mobility transistor: Study of etch chemistry and metal scheme

Niranjan S, Ivor Guiney, Colin J. Humphreys, Prosenjit Sen, Rangarajan Muralidharan, Digbijoy N. Nath
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 38, 032207 (2020)
https://doi.org/10.1116/1.5144509
Published: April 2020
View article titled, Au-free recessed Ohmic contacts to AlGaN/GaN high electron mobility transistor: Study of etch chemistry and metal scheme
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Journal Articles

High temperature operation to 500 °C of AlGaN graded polarization-doped field-effect transistors

Patrick H. Carey, IV, Fan Ren, Andrew M. Armstrong, Brianna A. Klein, Andrew A. Allerman, Erica A. Douglas, Albert G. Baca, Stephen J. Pearton
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 38, 033202 (2020)
https://doi.org/10.1116/1.5135590
Published: April 2020
View article titled, High temperature operation to 500 °C of AlGaN graded polarization-doped field-effect transistors
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Journal Articles

Low-temperature AlN film deposition using magnetic mirror-type magnetron cathode for low gas pressure operation

Taisei Motomura, Tatsuo Tabaru, Masato Uehara, Yuki Fujio, Tetsuya Okuyama
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 38, 032205 (2020)
https://doi.org/10.1116/1.5129720
Published: April 2020
View article titled, Low-temperature AlN film deposition using magnetic mirror-type magnetron cathode for low gas pressure operation
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Journal Articles

Growth-induced temperature changes during transition metal nitride epitaxy on transparent SiC substrates

Douglas Scott Katzer, Matthew T. Hardy, Neeraj Nepal, Brian P. Downey, Eric N. Jin, David J. Meyer
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 38, 032204 (2020)
https://doi.org/10.1116/6.0000063
Published: April 2020
View article titled, Growth-induced temperature changes during transition metal nitride epitaxy on transparent SiC substrates
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Journal Articles

AlGaN/GaN high electron mobility transistors on diamond substrate obtained through aluminum nitride bonding technology

Mahmoud Abou Daher, Marie Lesecq, Pascal Tilmant, Nicolas Defrance, Michel Rousseau, Yvon Cordier, Jean Claude De Jaeger, Jean Guy Tartarin
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 38, 033201 (2020)
https://doi.org/10.1116/1.5143418
Published: March 2020
View article titled, AlGaN/GaN high electron mobility transistors on diamond substrate obtained through aluminum nitride bonding technology
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Journal Articles

Effect of AlxGa1−xN buffer layer on the structural and electrical properties of AlGaN/GaN/AlxGa1−xN double heterojunction high electron mobility transistor structures

Yongjun Nam, Uiho Choi, Kyeongjae Lee, Taehoon Jang, Donghyeop Jung, Okhyun Nam
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 38, 022204 (2020)
https://doi.org/10.1116/1.5129031
Published: January 2020
View article titled, Effect of Al<sub>x</sub>Ga<sub>1−x</sub>N buffer layer on the structural and electrical properties of AlGaN/GaN/Al<sub>x</sub>Ga<sub>1−x</sub>N double heterojunction high electron mobility transistor structures
Open the PDF for Effect of Al<sub>x</sub>Ga<sub>1−x</sub>N buffer layer on the structural and electrical properties of AlGaN/GaN/Al<sub>x</sub>Ga<sub>1−x</sub>N double heterojunction high electron mobility transistor structures in another window
Journal Articles

Optical, electrical, and structural properties of single-phase Ti2 − xN films deposited by cathodic cage

C. H. Verbeno, A. C. Kröhling, M. C. Miranda, T. C. Freitas, V. P. Nascimento, E. C. Passamani, L. C. Gontijo
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 37, 061214 (2019)
https://doi.org/10.1116/1.5120836
Published: November 2019
View article titled, Optical, electrical, and structural properties of single-phase Ti<sub>2 − x</sub>N films deposited by cathodic cage
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Journal Articles

Valence and conduction band offsets at beryllium oxide interfaces with silicon carbide and III-V nitrides

Donghyi Koh, Sanjay K. Banerjee, Chris Locke, Stephen E. Saddow, Justin Brockman, Markus Kuhn, Sean W. King
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 37, 041206 (2019)
https://doi.org/10.1116/1.5111049
Published: July 2019
View article titled, Valence and conduction band offsets at beryllium oxide interfaces with silicon carbide and III-V nitrides
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Journal Articles

Multi-staged deposition of trench-gate oxides for power MOSFETs

Markus Neuber, Olaf Storbeck, Maik Langner, Knut Stahrenberg, Thomas Mikolajick
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 37, 032202 (2019)
https://doi.org/10.1116/1.5080527
Published: May 2019
View article titled, Multi-staged deposition of trench-gate oxides for power MOSFETs
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