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Journal Articles

Electrical characteristics of tungsten-doped InZnSnO thin film transistors by RF magnetron sputtering

Jinbao Su, Hui Yang, Weiguang Yang, Xiqing Zhang

J. Vac. Sci. Technol. B 40, 032201 (2022)

https://doi.org/10.1116/6.0001702

Published: March 2022

View article titled, Electrical characteristics of tungsten-doped InZnSnO thin film transistors by RF magnetron sputtering

Journal Articles

Rapid preparation of amorphous Al₂O₃ on graphene surface by plasma electrolysis technology

Yongfu Zhang, Yunjie Yang, Xiaolin Wei, Ben Ma, Weiwei Chen, Huanwu Cheng, Lu Wang, Tianyu Hou, Maoyuan Li, Lin Lu

J. Vac. Sci. Technol. B 40, 013601 (2022)

https://doi.org/10.1116/6.0001361

Published: January 2022

View article titled, Rapid preparation of amorphous Al2O3 on graphene surface by plasma electrolysis technology

Journal Articles

Postdeposition annealing effect on atomic-layer-deposited Al₂O₃ gate insulator on (001) β-Ga₂O₃

Atsushi Hiraiwa (平岩篤), 平岩篤, Kiyotaka Horikawa (堀川清貴), 堀川清貴, Hiroshi Kawarada (川原田洋), 川原田洋, Motohisa Kado (加渡幹尚), 加渡幹尚, Katsunori Danno (旦野克典), 旦野克典

J. Vac. Sci. Technol. B 39, 062205 (2021)

https://doi.org/10.1116/6.0001360

Published: October 2021

View article titled, Postdeposition annealing effect on atomic-layer-deposited Al2O3 gate insulator on (001) β-Ga2O3

Journal Articles

Direct imprinting of TiO₂ patterns on highly curved substrates

Ming Luo, Xin Hu

J. Vac. Sci. Technol. B 38, 062604 (2020)

https://doi.org/10.1116/6.0000554

Published: October 2020

View article titled, Direct imprinting of TiO2 patterns on highly curved substrates

Includes: Supplementary data

Journal Articles

Ellipsometric characterization of Bi and Al₂O₃ coatings for plasmon excitation in an optical fiber sensor

Eva Rodríguez-Schwendtner, Alberto Álvarez-Herrero, Antonio Mariscal, Rosalía Serna, Agustín González-Cano, María-Cruz Navarrete, Natalia Díaz-Herrera

J. Vac. Sci. Technol. B 37, 062914 (2019)

https://doi.org/10.1116/1.5121590

Published: October 2019

View article titled, Ellipsometric characterization of Bi and Al2O3 coatings for plasmon excitation in an optical fiber sensor

Journal Articles

Effects of solvents and polymer on photoluminescence of transferred WS₂ monolayers

Xiaotian Wang, Kyungnam Kang, Kyle Godin, Shichen Fu, Siwei Chen, Eui-Hyeok Yang

J. Vac. Sci. Technol. B 37, 052902 (2019)

https://doi.org/10.1116/1.5094543

Published: August 2019

View article titled, Effects of solvents and polymer on photoluminescence of transferred WS2 monolayers

Includes: Supplementary data

Journal Articles

High-breakdown-voltage AlGaN-channel metal-insulator-semiconductor heterostructure field-effect transistors employing a quaternary AlGaInN barrier layer and an Al₂O₃ gate insulator

Daiki Hosomi, Keita Furuoka, Heng Chen, Saki Saito, Toshiharu Kubo, Takashi Egawa, Makoto Miyoshi

J. Vac. Sci. Technol. B 37, 041205 (2019)

https://doi.org/10.1116/1.5097338

Published: July 2019

View article titled, High-breakdown-voltage AlGaN-channel metal-insulator-semiconductor heterostructure field-effect transistors employing a quaternary AlGaInN barrier layer and an Al2O3 gate insulator

Journal Articles

Interface trap characterization of AlN/GaN heterostructure with Al₂O₃, HfO₂, and HfO₂/Al₂O₃ dielectrics

Hogyoung Kim, Hee Ju Yun, Seok Choi, Byung Joon Choi

J. Vac. Sci. Technol. B 37, 041203 (2019)

https://doi.org/10.1116/1.5094174

Published: June 2019

View article titled, Interface trap characterization of AlN/GaN heterostructure with Al2O3, HfO2, and HfO2/Al2O3 dielectrics

Journal Articles

Determination of border/bulk traps parameters based on (C-G-V) admittance measurements

Andrzej Mazurak, Jakub Jasin´ski, Bogdan Majkusiak

J. Vac. Sci. Technol. B 37, 032904 (2019)

https://doi.org/10.1116/1.5060674

Published: May 2019

View article titled, Determination of border/bulk traps parameters based on (C-G-V) admittance measurements

Includes: Supplementary data

Journal Articles

Substrate temperature effect on migration behavior of fluorocarbon film precursors in high-aspect ratio structures

Andrew J. Knoll, Adam Pranda, Hoki Lee, Gottlieb S. Oehrlein

J. Vac. Sci. Technol. B 37, 031802 (2019)

https://doi.org/10.1116/1.5092969

Published: April 2019

View article titled, Substrate temperature effect on migration behavior of fluorocarbon film precursors in high-aspect ratio structures

Journal Articles

Set compliance current induced resistive memory characteristics of W/Hf/HfOx/TiN devices

S. Maji, S. Samanta, P. Das, S. Maikap, V. R. Dhanak, I. Z. Mitrovic, R. Mahapatra

J. Vac. Sci. Technol. B 37, 021204 (2019)

https://doi.org/10.1116/1.5079574

Published: February 2019

View article titled, Set compliance current induced resistive memory characteristics of W/Hf/HfOx/TiN devices

Journal Articles

High-density energy storage in Si-doped hafnium oxide thin films on area-enhanced substrates

Kati Kühnel, Malte Czernohorsky, Clemens Mart, Wenke Weinreich

J. Vac. Sci. Technol. B 37, 021401 (2019)

https://doi.org/10.1116/1.5060738

Published: February 2019

View article titled, High-density energy storage in Si-doped hafnium oxide thin films on area-enhanced substrates

Journal Articles

Enhanced red emission of Eu³⁺ in ZnO-TiO₂:Dy³⁺, Eu³⁺ nanocomposites by UV downconversion process

Sefako J. Mofokeng, Vinod Kumar, Robin E. Kroon, So-Hye Cho, Odireleng M. Ntwaeaborwa

J. Vac. Sci. Technol. B 37, 022901 (2019)

https://doi.org/10.1116/1.5081953

Published: January 2019

View article titled, Enhanced red emission of Eu3+ in ZnO-TiO2:Dy3+, Eu3+ nanocomposites by UV downconversion process

Journal Articles

High-voltage metal-insulator-metal capacitor based on crystalline HfAlO_x film grown by atomic layer deposition

Michael Lisiansky, Inna Popov, Vladimir Uvarov, Valentina Korchnoy, Boris Meyler, Svetlana Yofis, Yacov Shneider

J. Vac. Sci. Technol. B 37, 011209 (2019)

https://doi.org/10.1116/1.5054848

Published: January 2019

View article titled, High-voltage metal-insulator-metal capacitor based on crystalline HfAlOx film grown by atomic layer deposition

Journal Articles

Thermal study of multilayer resistive random access memories based on HfO₂ and Al₂O₃ oxides

Manuel Cazorla, Samuel Aldana, Marcos Maestro, Mireia Bargalló González, Francesca Campabadal, Enrique Moreno, Francisco Jiménez-Molinos, Juan Bautista Roldán

J. Vac. Sci. Technol. B 37, 012204 (2019)

https://doi.org/10.1116/1.5058294

Published: January 2019

View article titled, Thermal study of multilayer resistive random access memories based on HfO2 and Al2O3 oxides

Journal Articles

Structure-specific photoluminescence of ZnGa₂O₄:Eu³⁺ thin films deposited on sapphire C-plane substrates

Housei Akazawa

J. Vac. Sci. Technol. B 37, 011205 (2019)

https://doi.org/10.1116/1.5063942

Published: January 2019

View article titled, Structure-specific photoluminescence of ZnGa2O4:Eu3+ thin films deposited on sapphire C-plane substrates

Journal Articles

New method to analyze random telegraph signals in resistive random access memories

Gerardo González-Cordero, Mireia B. González, Francisco Jiménez-Molinos, Francesca Campabadal, Juan Bautista Roldán

J. Vac. Sci. Technol. B 37, 012203 (2019)

https://doi.org/10.1116/1.5059384

Published: January 2019

View article titled, New method to analyze random telegraph signals in resistive random access memories

Journal Articles

Drude and Kukharskii mobility of doped semiconductors extracted from Fourier-transform infrared ellipsometry spectra

Stefan Zollner, Pablo P. Paradis, Farzin Abadizaman, Nuwanjula S. Samarasingha

J. Vac. Sci. Technol. B 37, 012904 (2019)

https://doi.org/10.1116/1.5081055

Published: January 2019

View article titled, Drude and Kukharskii mobility of doped semiconductors extracted from Fourier-transform infrared ellipsometry spectra

Includes: Supplementary data

Journal Articles

Data retention investigation in Al:HfO₂-based resistive random access memory arrays by using high-temperature accelerated tests

Eduardo Perez, Mamathamba K. Mahadevaiah, Cristian Zambelli, Piero Olivo, Christian Wenger

J. Vac. Sci. Technol. B 37, 012202 (2019)

https://doi.org/10.1116/1.5054983

Published: January 2019

View article titled, Data retention investigation in Al:HfO2-based resistive random access memory arrays by using high-temperature accelerated tests

Journal Articles

Enhanced green luminescence from ZnO nanorods

Emad H. H. Hasabeldaim, Odireleng M. Ntwaeaborwa, Robin E. Kroon, Elizabeth Coetsee, Hendrik C. Swart

J. Vac. Sci. Technol. B 37, 011201 (2019)

https://doi.org/10.1116/1.5052543

Published: January 2019

View article titled, Enhanced green luminescence from ZnO nanorods

NARROW

Topics

Electrical characteristics of tungsten-doped InZnSnO thin film transistors by RF magnetron sputtering

Rapid preparation of amorphous Al₂O₃ on graphene surface by plasma electrolysis technology

Postdeposition annealing effect on atomic-layer-deposited Al₂O₃ gate insulator on (001) β-Ga₂O₃

Direct imprinting of TiO₂ patterns on highly curved substrates

Ellipsometric characterization of Bi and Al₂O₃ coatings for plasmon excitation in an optical fiber sensor

Effects of solvents and polymer on photoluminescence of transferred WS₂ monolayers

High-breakdown-voltage AlGaN-channel metal-insulator-semiconductor heterostructure field-effect transistors employing a quaternary AlGaInN barrier layer and an Al₂O₃ gate insulator

Interface trap characterization of AlN/GaN heterostructure with Al₂O₃, HfO₂, and HfO₂/Al₂O₃ dielectrics

Determination of border/bulk traps parameters based on (C-G-V) admittance measurements

Substrate temperature effect on migration behavior of fluorocarbon film precursors in high-aspect ratio structures

Set compliance current induced resistive memory characteristics of W/Hf/HfOx/TiN devices

High-density energy storage in Si-doped hafnium oxide thin films on area-enhanced substrates

Enhanced red emission of Eu³⁺ in ZnO-TiO₂:Dy³⁺, Eu³⁺ nanocomposites by UV downconversion process

High-voltage metal-insulator-metal capacitor based on crystalline HfAlO_x film grown by atomic layer deposition

Thermal study of multilayer resistive random access memories based on HfO₂ and Al₂O₃ oxides

Structure-specific photoluminescence of ZnGa₂O₄:Eu³⁺ thin films deposited on sapphire C-plane substrates

New method to analyze random telegraph signals in resistive random access memories

Drude and Kukharskii mobility of doped semiconductors extracted from Fourier-transform infrared ellipsometry spectra

Data retention investigation in Al:HfO₂-based resistive random access memory arrays by using high-temperature accelerated tests

Enhanced green luminescence from ZnO nanorods

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