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Journal Articles

Roughness-generation mechanism of Ru etching using Cl2/O2-based plasma for advanced interconnect

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Miyako Matsui, Yohei Ishii, Lucas Kovatch, Kathryn Maier, Masaya Imai, Makoto Miura, Kenichi Kuwahara
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 042208 (2024)
https://doi.org/10.1116/6.0003736
Published: July 2024
View articletitled, Roughness-generation mechanism of Ru etching using Cl2/O2-based plasma for advanced interconnect
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Journal Articles

Relationship between formation of surface-reaction layers and flux of dissociated species in C4F8/Ar plasma for SiO2 etching using pulsed-microwave plasma

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Miyako Matsui, Tatehito Usui, Hisao Yasunami, Tetsuo Ono
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 051204 (2016)
https://doi.org/10.1116/1.4961456
Published: August 2016
View articletitled, Relationship between formation of surface-reaction layers and flux of dissociated species in C4F8/Ar plasma for SiO2 etching using pulsed-microwave plasma
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Journal Articles

Conductance fluctuations in graphene subjected to short-range disorder

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Bobo Liu, Richard Akis, David K Ferry
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 04E101 (2015)
https://doi.org/10.1116/1.4917496
Published: April 2015
View articletitled, Conductance fluctuations in graphene subjected to short-range disorder
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Journal Articles

Feature profile evolution during shallow trench isolation etching in chlorine-based plasmas. III. The effect of oxygen addition

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Cheng-che Hsu, Nathan Marchack, Ryan M. Martin, Calvin Pham, John Hoang, Jane P. Chang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 31, 042201 (2013)
https://doi.org/10.1116/1.4810908
Published: July 2013
View articletitled, Feature profile evolution during shallow trench isolation etching in chlorine-based plasmas. III. The effect of oxygen addition
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Journal Articles

Effect of strain and confinement on the effective mass of holes in InSb quantum wells

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C. K. Gaspe, M. Edirisooriya, T. D. Mishima, P. A. R. Dilhani Jayathilaka, R. E. Doezema, S. Q. Murphy, M. B. Santos, L. C. Tung, Y.-J. Wang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 03C110 (2011)
https://doi.org/10.1116/1.3553457
Published: February 2011
View articletitled, Effect of strain and confinement on the effective mass of holes in InSb quantum wells
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Journal Articles

Electron field emission from well-aligned GaP nanotips

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Hung-Chun Lo, Jeff T. H. Tsai, Jih-Perng Leu, Chia-Fu Chen
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, 1284–1286 (2010)
https://doi.org/10.1116/1.3506089
Published: November 2010
View articletitled, Electron field emission from well-aligned GaP nanotips
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Journal Articles

Characteristics of lanthanum hafnium oxide deposited by electron cyclotron resonance atomic layer deposition

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Woong-Sun Kim, Tae-Sub Kim, Byung-Woo Kang, Myoung-Gyun Ko, Sang-Kyun Park, Jong-Wan Park
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 1588–1591 (2008)
https://doi.org/10.1116/1.2936233
Published: August 2008
View articletitled, Characteristics of lanthanum hafnium oxide deposited by electron cyclotron resonance atomic layer deposition
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Journal Articles

Characterization and modeling of antireflective coatings of Si O 2 , Si 3 N 4 , and Si O x N y deposited by electron cyclotron resonance enhanced plasma chemical vapor deposition

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S. N. M. Mestanza, M. P. Obrador, E. Rodriguez, C. Biasotto, I. Doi, J. A. Diniz, J. W. Swart
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 24, 823–827 (2006)
https://doi.org/10.1116/1.2181577
Published: March 2006
View articletitled, Characterization and modeling of antireflective coatings of Si O 2 , Si 3 N 4 , and Si O x N y deposited by electron cyclotron resonance enhanced plasma chemical vapor deposition
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Journal Articles

Role of neutral molecule chemistry in electron cyclotron resonance microwave plasmas capable of diamond deposition

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R. Blumenthal, S. F. Webb
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 24, 643–650 (2006)
https://doi.org/10.1116/1.2174028
Published: March 2006
View articletitled, Role of neutral molecule chemistry in electron cyclotron resonance microwave plasmas capable of diamond deposition
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Journal Articles

Cl 2 ∕ O 2 -inductively coupled plasma etching of deep hole-type photonic crystals in InP

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C. F. Carlström, R. van der Heijden, F. Karouta, R. W. van der Heijden, H. W. M. Salemink, E. van der Drift
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 24, L6–L9 (2006)
https://doi.org/10.1116/1.2151915
Published: January 2006
View articletitled, Cl 2 ∕ O 2 -inductively coupled plasma etching of deep hole-type photonic crystals in InP
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Journal Articles

Reduction of oxide layer on Ru surface by atomic-hydrogen treatment

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I. Nishiyama, H. Oizumi, K. Motai, A. Izumi, T. Ueno, H. Akiyama, A. Namiki
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 23, 3129–3131 (2005)
https://doi.org/10.1116/1.2130356
Published: December 2005
View articletitled, Reduction of oxide layer on Ru surface by atomic-hydrogen treatment
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Journal Articles

MOS-diode characteristics of ultrathin Al 2 O 3 gate dielectrics after exposure to an electron-cyclotron-resonance plasma stream

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Yoshito Jin, Kunio Saito, Masaru Shimada, Toshiro Ono
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 23, 1480–1486 (2005)
https://doi.org/10.1116/1.1941250
Published: July 2005
View articletitled, MOS-diode characteristics of ultrathin Al 2 O 3 gate dielectrics after exposure to an electron-cyclotron-resonance plasma stream
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Journal Articles

Technology of polycrystalline diamond thin films for microsystems applications

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Yuxing Tang, Dean M. Aslam
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 23, 1088–1095 (2005)
https://doi.org/10.1116/1.1926290
Published: June 2005
View articletitled, Technology of polycrystalline diamond thin films for microsystems applications
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Journal Articles

Photonic crystal waveguides with propagation losses in the 1 dB ∕ mm range

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J. Zimmermann, H. Scherer, M. Kamp, S. Deubert, J. P. Reithmaier, A. Forchel, R. März, S. Anand
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 22, 3356–3358 (2004)
https://doi.org/10.1116/1.1824053
Published: December 2004
View articletitled, Photonic crystal waveguides with propagation losses in the 1 dB ∕ mm range
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Journal Articles

Analysis and control of excess leakage currents in nitride-based Schottky diodes based on thin surface barrier model

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Junji Kotani, Tamotsu Hashizume, Hideki Hasegawa
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 22, 2179–2189 (2004)
https://doi.org/10.1116/1.1771678
Published: August 2004
View articletitled, Analysis and control of excess leakage currents in nitride-based Schottky diodes based on thin surface barrier model
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Journal Articles

Etching of submicron holes in SiO 2 ,   Ta 2 O 5 , and Nb 2 O 5

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R. Boucher, W. Morgenroth, H. Roth, H. G. Meyer, C. Liguda, M. Eich
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 22, 519–522 (2004)
https://doi.org/10.1116/1.1648068
Published: February 2004
View articletitled, Etching of submicron holes in SiO 2 ,   Ta 2 O 5 , and Nb 2 O 5
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Journal Articles

Tantalum film for x-ray lithography mask deposited by electron cyclotron resonance plasma source coupled with divided microwaves

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H. Nishimura, T. Ono, M. Oda, S. Matsuo
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 22, 40–45 (2004)
https://doi.org/10.1116/1.1633769
Published: December 2003
View articletitled, Tantalum film for x-ray lithography mask deposited by electron cyclotron resonance plasma source coupled with divided microwaves
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Journal Articles

Fabrication and characteristics of lateral type GaN field-emission arrays using metalorganic chemical vapor deposition

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Jae-Hoon Lee, Myoung-Bok Lee, Sung-Ho Hahm, Jung-Hee Lee, Jin-Sup Kim, Kyu-Man Choi, Yeo-Hwan Kim
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 21, 1566–1569 (2003)
https://doi.org/10.1116/1.1575759
Published: July 2003
View articletitled, Fabrication and characteristics of lateral type GaN field-emission arrays using metalorganic chemical vapor deposition
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Journal Articles

Using electron cyclotron resonance sputtering in the deposition of ultrathin Al 2 O 3 gate dielectrics

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Yoshito Jin, Kunio Saito, Masaru Shimada, Toshiro Ono
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 21, 942–948 (2003)
https://doi.org/10.1116/1.1565347
Published: April 2003
View articletitled, Using electron cyclotron resonance sputtering in the deposition of ultrathin Al 2 O 3 gate dielectrics
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Journal Articles

Thermal effects in atomic-order nitridation of Si by a nitrogen plasma

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Takuya Seino, Daisuke Muto, Takashi Matsuura, Junichi Murota
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 20, 1431–1435 (2002)
https://doi.org/10.1116/1.1491553
Published: August 2002
View articletitled, Thermal effects in atomic-order nitridation of Si by a nitrogen plasma
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