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Journal Articles

Gradient-composition upper-waveguide and electron-blocking layers for enhanced performance in near-ultraviolet laser diodes

MaoLin Gao, Jing Yang, Wei Jia, DeGang Zhao, HaiLiang Dong, XiuYang Jia, GuangMei Zhai, BingShe Xu
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 43, 032201 (2025)
https://doi.org/10.1116/6.0004374
Published: March 2025
View article titled, Gradient-composition upper-waveguide and electron-blocking layers for enhanced performance in near-ultraviolet laser diodes
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Journal Articles

Realizing GaN-based blue laser diode with 7.5 W output power via electron blocking layer thickness adjustment

Zhenyu Chen, Feng Liang, Degang Zhao, Zongshun Liu, Jing Yang, Ping Chen
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 43, 032203 (2025)
https://doi.org/10.1116/6.0004426
Published: March 2025
View article titled, Realizing GaN-based blue laser diode with 7.5 W output power via electron blocking layer thickness adjustment
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Journal Articles

Retraction: “Dependence of structural and optical properties of In0.23Ga0.77As/GaAs quantum wells on misfit dislocations: Different critical thickness for dislocation generation and degradation of optical properties” [J. Vac. Sci. Technol. B 8 , 751–757 (1990)]

M. Grundmann, U. Lienert, J. Christen, D. Bimberg, A. Fischer-Colbrie, J. N. Miller
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 063402 (2023)
https://doi.org/10.1116/6.0003220
Published: November 2023
View article titled, Retraction: “Dependence of structural and optical properties of In<sub>0.23</sub>Ga<sub>0.77</sub>As/GaAs quantum wells on misfit dislocations: Different critical thickness for dislocation generation and degradation of optical properties” [J. Vac. Sci. Technol. B 8 , 751–757 (1990)]
Open the PDF for Retraction: “Dependence of structural and optical properties of In<sub>0.23</sub>Ga<sub>0.77</sub>As/GaAs quantum wells on misfit dislocations: Different critical thickness for dislocation generation and degradation of optical properties” [J. Vac. Sci. Technol. B 8 , 751–757 (1990)] in another window
Journal Articles

Effect of varying threading dislocation densities on the optical properties of InGaN/GaN quantum wells with intentionally created V-shaped pits

Kaitian Zhang, Chenxi Hu, Vijay Gopal Thirupakuzi Vangipuram, Lingyu Meng, Christopher Chae, Menglin Zhu, Jinwoo Hwang, Kathleen Kash, Hongping Zhao
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 062207 (2023)
https://doi.org/10.1116/6.0003141
Published: November 2023
View article titled, Effect of varying threading dislocation densities on the optical properties of InGaN/GaN quantum wells with intentionally created V-shaped pits
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Journal Articles

Photoluminescence properties of epitaxial asymmetric triple CdSe quantum wells

Liliana Fernanda Hernández-García, Frantisek Sutara, Isaac Hernández-Calderón
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 38, 042202 (2020)
https://doi.org/10.1116/6.0000091
Published: June 2020
View article titled, Photoluminescence properties of epitaxial asymmetric triple CdSe quantum wells
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Journal Articles

Optical properties of surface grated Si-based multilayer structure

Ayaz Bayramov, Elvin Alizade, Samir Mammadov, Avtandil Tavkhelidze, Nazim Mamedov, Yegana Aliyeva, Khuraman Ahmedova, Saida Asadullayeva, Larissa Jangidze, Givi Skhiladze
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 37, 061807 (2019)
https://doi.org/10.1116/1.5120799
Published: October 2019
View article titled, Optical properties of surface grated Si-based multilayer structure
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Journal Articles

Fabrication and optical properties of regularly arranged GaN-based nanocolumns on Si substrate

Hiroto Sekiguchi, Yukimasa Higashi, Keisuke Yamane, Akihiro Wakahara, Hiroshi Okada, Katsumi Kishino
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 37, 031207 (2019)
https://doi.org/10.1116/1.5088160
Published: April 2019
View article titled, Fabrication and optical properties of regularly arranged GaN-based nanocolumns on Si substrate
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Journal Articles

Planar nanowires fabricated by thermal gratings on the GaAs(001) surface

Anahita Haghizadeh, Haeyeon Yang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 031202 (2017)
https://doi.org/10.1116/1.4979330
Published: March 2017
View article titled, Planar nanowires fabricated by thermal gratings on the GaAs(001) surface
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Journal Articles

Engineering carrier lifetimes in type-II In(Ga)Sb/InAs mid-IR emitters

Editor’s Pick
Lan Yu, Yujun Zhong, Sukrith Dev, Daniel Wasserman
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 02B101 (2017)
https://doi.org/10.1116/1.4972978
Published: December 2016
View article titled, Engineering carrier lifetimes in type-II In(Ga)Sb/InAs mid-IR emitters
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Journal Articles

SIMS depth profiling and topography studies of repetitive III–V trenches under low energy oxygen ion beam sputtering

Viktoriia Gorbenko, Franck Bassani, Alexandre Merkulov, Thierry Baron, Mickael Martin, Sylvain David, Jean-Paul Barnes
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 03H131 (2016)
https://doi.org/10.1116/1.4944632
Published: March 2016
View article titled, SIMS depth profiling and topography studies of repetitive III–V trenches under low energy oxygen ion beam sputtering
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Journal Articles

MBE growth of sharp interfaces in dilute-nitride quantum wells with improved nitrogen-plasma design

Gopi Krishna Vijaya, Alex Freundlich, Dinghao Tang, David J. Smith
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 031209 (2015)
https://doi.org/10.1116/1.4918711
Published: April 2015
View article titled, MBE growth of sharp interfaces in dilute-nitride quantum wells with improved nitrogen-plasma design
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Journal Articles

Deep ultraviolet photopumped stimulated emission from partially relaxed AlGaN multiple quantum well heterostructures grown on sapphire substrates

Fatima Asif, Mohamed Lachab, Antwon Coleman, Iftikhar Ahmad, Bin Zhang, Vinod Adivarahan, Asif Khan
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 061204 (2014)
https://doi.org/10.1116/1.4898694
Published: October 2014
View article titled, Deep ultraviolet photopumped stimulated emission from partially relaxed AlGaN multiple quantum well heterostructures grown on sapphire substrates
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Journal Articles

Composition and interface analysis of InGaN/GaN multiquantum-wells on GaN substrates using atom probe tomography

Fang Liu, Li Huang, Robert F. Davis, Lisa M. Porter, Daniel K. Schreiber, Satyanarayana V. N. T. Kuchibatla, Vaithiyalingam Shutthanandan, Suntharampillai Thevuthasan, Edward A. Preble, Tania Paskova, Keith R. Evans
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 051209 (2014)
https://doi.org/10.1116/1.4893976
Published: September 2014
View article titled, Composition and interface analysis of InGaN/GaN multiquantum-wells on GaN substrates using atom probe tomography
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Journal Articles

Molecular beam epitaxy using bismuth as a constituent in InAs and a surfactant in InAs/InAsSb superlattices

Preston T. Webster, Nathaniel A. Riordan, Chaturvedi Gogineni, Shi Liu, Jing Lu, Xin-Hao Zhao, David J. Smith, Yong-Hang Zhang, Shane R. Johnson
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 02C120 (2014)
https://doi.org/10.1116/1.4868111
Published: March 2014
View article titled, Molecular beam epitaxy using bismuth as a constituent in InAs and a surfactant in InAs/InAsSb superlattices
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Journal Articles

Semipolar ( 20 2 ¯ 1 ) GaN laser diodes operating at 388 nm grown by plasma-assisted molecular beam epitaxy

Marta Sawicka, Grzegorz Muziol, Henryk Turski, Anna Feduniewicz-Żmuda, Marcin Kryśko, Szymon Grzanka, Ewa Grzanka, Julita Smalc-Koziorowska, Martin Albrecht, Robert Kucharski, Piotr Perlin, Czeslaw Skierbiszewski
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 02C115 (2014)
https://doi.org/10.1116/1.4865913
Published: February 2014
View article titled, Semipolar ( 20 2 ¯ 1 ) GaN laser diodes operating at 388 nm grown by plasma-assisted molecular beam epitaxy
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Journal Articles

Engineering the color rendering index of phosphor-free InGaN/(Al)GaN nanowire white light emitting diodes grown by molecular beam epitaxy

Ashfiqua T. Connie, Hieu P. T. Nguyen, Sharif M. Sadaf, Ishiang Shih, Zetian Mi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 02C113 (2014)
https://doi.org/10.1116/1.4865914
Published: February 2014
View article titled, Engineering the color rendering index of phosphor-free InGaN/(Al)GaN nanowire white light emitting diodes grown by molecular beam epitaxy
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Journal Articles

AlGaN cladding-free 482 nm continuous wave nitride laser diodes grown by plasma-assisted molecular beam epitaxy

Czesław Skierbiszewski, Henryk Turski, Grzegorz Muziol, Paweł Wolny, Grzegorz Cywiński, Szymon Grzanka, Julita Smalc-Koziorowska, Marta Sawicka, Piotr Perlin, Zbig R. Wasilewski, Sylwester Porowski
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 02C112 (2014)
https://doi.org/10.1116/1.4865478
Published: February 2014
View article titled, AlGaN cladding-free 482 nm continuous wave nitride laser diodes grown by plasma-assisted molecular beam epitaxy
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Journal Articles

MBE growth of P-doped 1.3 μm InAs quantum dot lasers on silicon

Alan Y. Liu, Chong Zhang, Andrew Snyder, Dmitri Lubyshev, Joel M. Fastenau, Amy W. K. Liu, Arthur C. Gossard, John E. Bowers
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 02C108 (2014)
https://doi.org/10.1116/1.4864148
Published: February 2014
View article titled, MBE growth of P-doped 1.3 <em>μ</em>m InAs quantum dot lasers on silicon
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Journal Articles

Semiempirical method of suppressing interference effects in photoluminescence spectra of GaN heterostructures

Yu-Li Wang, Kuan-Yu Chen, Wei-Chen Yang, Shao-Yen Chiu, Keh-Yung Cheng
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 02C107 (2014)
https://doi.org/10.1116/1.4864054
Published: February 2014
View article titled, Semiempirical method of suppressing interference effects in photoluminescence spectra of GaN heterostructures
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Journal Articles

Near infrared intersubband absorption of CdSe/MgSe quantum wells grown on InP substrate with an InAlAs buffer layer

Guopeng Chen, Kuaile Zhao, Maria C. Tamargo, Aidong Shen
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 02C105 (2014)
https://doi.org/10.1116/1.4863496
Published: January 2014
View article titled, Near infrared intersubband absorption of CdSe/MgSe quantum wells grown on InP substrate with an InAlAs buffer layer
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