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Journal Articles

InAs nanostructures on InGaAsP/InP(001): Interaction of InAs quantum-dash formation with InGaAsP decomposition

F. Genz, A. Lenz, H. Eisele, L. Ivanova, R. Timm, U. W. Pohl, M. Dähne, D. Franke, H. Künzel
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, C5E1–C5E7 (2010)
https://doi.org/10.1116/1.3456173
Published: July 2010
View article titled, InAs nanostructures on InGaAsP/InP(001): Interaction of InAs quantum-dash formation with InGaAsP decomposition
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Journal Articles

Effect of n - and p -type dopants on patterned amorphous regrowth

S. Morarka, N. G. Rudawski, M. E. Law, K. S. Jones, R. G. Elliman
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, C1F1–C1F5 (2010)
https://doi.org/10.1116/1.3207953
Published: March 2010
View article titled, Effect of n - and p -type dopants on patterned amorphous regrowth
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Journal Articles

Statistical representation of intrinsic electronic tunneling characteristics through alkyl self-assembled monolayers in nanowell device structures

Hyunwook Song, Takhee Lee, Nak-Jin Choi, Hyoyoung Lee
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 904–908 (2008)
https://doi.org/10.1116/1.2905237
Published: April 2008
View article titled, Statistical representation of intrinsic electronic tunneling characteristics through alkyl self-assembled monolayers in nanowell device structures
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Journal Articles

Possible role of oxygen impurities in degradation of n c - Ti N ∕ a - Si 3 N 4 nanocomposites

Stan Veprek, Pavla Karvankova, Maritza G. J. Veprek-Heijman
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 23, L17–L21 (2005)
https://doi.org/10.1116/1.2131086
Published: November 2005
View article titled, Possible role of oxygen impurities in degradation of n c - Ti N ∕ a - Si 3 N 4 nanocomposites
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Journal Articles

Scanning tunneling microscopy investigation of nanostructures produced by Ar + and He + bombardment of Mo S 2 surfaces

J. B. Park, C. B. France, B. A. Parkinson
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 23, 1532–1542 (2005)
https://doi.org/10.1116/1.1993622
Published: July 2005
View article titled, Scanning tunneling microscopy investigation of nanostructures produced by Ar + and He + bombardment of Mo S 2 surfaces
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Journal Articles

Structural and electrical investigation of high temperature annealed As-implanted Si crystals

C. Bocchi, L. Felisari, A. Catellani, G. Cicero, F. Germini, E. Gombia, R. Mosca, L. Nasi, E. Kh. Mukhamedzhanov, M. A. Chuev, V. Privitera, M. Camalleri, D. Calì
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 23, 1504–1514 (2005)
https://doi.org/10.1116/1.1990130
Published: July 2005
View article titled, Structural and electrical investigation of high temperature annealed As-implanted Si crystals
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Journal Articles

Structural and electronic effects of argon sputtering and reactive ion etching on In0.53Ga0.47As and In0.52Al0.48As studied by inelastic light scattering

J. E. Maslar, J. F. Dorsten, P. W. Bohn, S. Agarwala, I. Adesida, C. Caneau, R. Bhat
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 13, 988–994 (1995)
https://doi.org/10.1116/1.588217
Published: May 1995
View article titled, Structural and electronic effects of argon sputtering and reactive ion etching on In<sub>0.53</sub>Ga<sub>0.47</sub>As and In<sub>0.52</sub>Al<sub>0.48</sub>As studied by inelastic light scattering
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Journal Articles

Ring structures on natural molybdenum disulfide investigated by scanning tunneling and scanning force microscopy

Wolfgang M. Heckl, Frank Ohnesorge, Gerd Binnig, Martin Specht, M. Hashmi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 9, 1072–1078 (1991)
https://doi.org/10.1116/1.585263
Published: March 1991
View article titled, Ring structures on natural molybdenum disulfide investigated by scanning tunneling and scanning force microscopy
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