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Journal Articles

Silicon nanostructures with very large negatively tapered profile by inductively coupled plasma-RIE

Asma Ayari-Kanoun, Ferhat Aydinoglu, Bo Cui, Faycal Saffih
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 06KD01 (2016)
https://doi.org/10.1116/1.4964402
Published: October 2016
View article titled, Silicon nanostructures with very large negatively tapered profile by inductively coupled plasma-RIE
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Journal Articles

Interactions of higher order tip effects in critical dimension-AFM linewidth metrology

Ronald Dixson, Boon Ping Ng, Xavier Bonnaud, Ndubuisi Orji
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 031806 (2015)
https://doi.org/10.1116/1.4919090
Published: April 2015
View article titled, Interactions of higher order tip effects in critical dimension-AFM linewidth metrology
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Journal Articles

Transfer of nanopantography-defined patterns using highly selective plasma etching

Siyuan Tian, Vincent M. Donnelly, Demetre J. Economou
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 030602 (2015)
https://doi.org/10.1116/1.4918716
Published: April 2015
View article titled, Transfer of nanopantography-defined patterns using highly selective plasma etching
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Journal Articles

Thermally reflowed ZEP 520A for gate length reduction and profile rounding in T-gate fabrication

Brian P. Downey, David J. Meyer, Robert Bass, D. Scott Katzer, Steven C. Binari
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 30, 051603 (2012)
https://doi.org/10.1116/1.4740502
Published: August 2012
View article titled, Thermally reflowed ZEP 520A for gate length reduction and profile rounding in T-gate fabrication
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Journal Articles

Investigation of the 100 GHz reentrant linear magnetron using particle-in-cell simulation

Jung-Il Kim, Seok-Gy Jeon, Yun-Sik Jin, Geun-Ju Kim, Dae-Ho Kim, Sun-Shin Jung
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 687–691 (2009)
https://doi.org/10.1116/1.3072885
Published: March 2009
View article titled, Investigation of the 100 GHz reentrant linear magnetron using particle-in-cell simulation
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Journal Articles

Fabrication of sub-transistor via holes for small and efficient power amplifiers using highly selective GaAs ∕ InGaP wet etching

Hiroyuki Uchiyama, Hiroshi Ohta, Takashi Shiota, Chisaki Takubo, Kenichi Tanaka, Kazuhiro Mochizuki
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 24, 664–668 (2006)
https://doi.org/10.1116/1.2178368
Published: March 2006
View article titled, Fabrication of sub-transistor via holes for small and efficient power amplifiers using highly selective GaAs ∕ InGaP wet etching
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Journal Articles

Tip characterization and surface reconstruction of complex structures with critical dimension atomic force microscopy

G. Dahlen, M. Osborn, N. Okulan, W. Foreman, A. Chand, J. Foucher
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 23, 2297–2303 (2005)
https://doi.org/10.1116/1.2101601
Published: October 2005
View article titled, Tip characterization and surface reconstruction of complex structures with critical dimension atomic force microscopy
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Journal Articles

Scanning thermal lithography: Maskless, submicron thermochemical patterning of photoresist by ultracompliant probes

Amar S. Basu, Shamus McNamara, Yogesh B. Gianchandani
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 22, 3217–3220 (2004)
https://doi.org/10.1116/1.1808732
Published: December 2004
View article titled, Scanning thermal lithography: Maskless, submicron thermochemical patterning of photoresist by ultracompliant probes
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Journal Articles

Small aperture fabrication for single quantum dot spectroscopy

D. Park, C. R. K. Marrian, D. Gammon, R. Bass, P. Isaacson, E. Snow
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 16, 3891–3893 (1998)
https://doi.org/10.1116/1.590429
Published: November 1998
View article titled, Small aperture fabrication for single quantum dot spectroscopy
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Journal Articles

Contrast of ion beam proximity printing with nonideal masks

D. P. Stumbo, J. C. Wolfe
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 12, 3539–3542 (1994)
https://doi.org/10.1116/1.587466
Published: November 1994
View article titled, Contrast of ion beam proximity printing with nonideal masks
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Journal Articles

Radio‐frequency Ar sputter etch rates: Theory and experiment

C. M. Horwitz, T. Puzzer, J. Melngailis
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 11, 1895–1902 (1993)
https://doi.org/10.1116/1.586518
Published: September 1993
View article titled, Radio‐frequency Ar sputter etch rates: Theory and experiment
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Journal Articles

Comparison of exposure, bake, and dissolution characteristics of electron beam and optically exposed chemically amplified resists

N. N. Tam, R. A. Ferguson, A. Titus, J. M. Hutchinson, C. A. Spence, A. R. Neureuther
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 8, 1470–1475 (1990)
https://doi.org/10.1116/1.585099
Published: November 1990
View article titled, Comparison of exposure, bake, and dissolution characteristics of electron beam and optically exposed chemically amplified resists
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Journal Articles

Approaches to deep ultraviolet photolithography utilizing acid hardened resin photoresist systems

James W. Thackeray, George W. Orsula, John F. Bohland, Andrew W. McCullough
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 7, 1620–1623 (1989)
https://doi.org/10.1116/1.584502
Published: November 1989
View article titled, Approaches to deep ultraviolet photolithography utilizing acid hardened resin photoresist systems
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Journal Articles

A metal liftoff process facilitated by the use of contrast enhanced photolithography

P. R. West, K. J. Polasko, C. L. Fasoldt
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 5, 449–453 (1987)
https://doi.org/10.1116/1.583924
Published: January 1987
View article titled, A metal liftoff process facilitated by the use of contrast enhanced photolithography
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