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Journal Articles

100 keV vacuum sealed field emission gun for high resolution electron microscopy

Mohamed M. El-Gomati, Torquil Wells, Xiaoping Zha, Richard Sykes, Christopher J. Russo, Richard Henderson, Greg McMullan
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 39, 062804 (2021)
https://doi.org/10.1116/6.0001275
Published: November 2021
View article titled, 100 keV vacuum sealed field emission gun for high resolution electron microscopy
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Journal Articles

Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition

Chiyu Zhu, David J. Smith, Robert J. Nemanich
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 30, 051807 (2012)
https://doi.org/10.1116/1.4752089
Published: September 2012
View article titled, Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition
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Journal Articles

Monochromatic electron-emission from planar AlN/GaN multilayers with carbon nanotube gate electrode

Oktay Yilmazoglu, Laurence Considine, Ravi Joshi, Hidenori Mimura, Dimitris Pavlidis, Hans L. Hartnagel, Jörg J. Schneider, Anatoli Evtukh, Mykola Semenenko, Vladimir Litovchenko
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 30, 042203 (2012)
https://doi.org/10.1116/1.4732117
Published: June 2012
View article titled, Monochromatic electron-emission from planar AlN/GaN multilayers with carbon nanotube gate electrode
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Journal Articles

Structural properties of InAs/InAs1–xSbx type-II superlattices grown by molecular beam epitaxy

Lu Ouyang, Elizabeth H. Steenbergen, Yong-Hang Zhang, Kalyan Nunna, Diana L. Huffaker, David J. Smith
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 30, 02B106 (2012)
https://doi.org/10.1116/1.3672026
Published: December 2011
View article titled, Structural properties of InAs/InAs<sub>1–x</sub>Sb<sub>x</sub> type-II superlattices grown by molecular beam epitaxy
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Journal Articles

Early stages of direct L 1 0 FePt nanocluster formation: The effects of plasma characteristics

M. M. Patterson, A. Cochran, J. Ferina, X. Rui, T. A. Zimmerman, Z. Sun, M. J. Kramer, D. J. Sellmyer, J. E. Shield
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, 273–276 (2010)
https://doi.org/10.1116/1.3298888
Published: March 2010
View article titled, Early stages of direct L 1 0 FePt nanocluster formation: The effects of plasma characteristics
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Journal Articles

Thermodynamically stable nanotips of Au–Mo alloy

K. Nomura, T. Nagao, B. L. Cho, H. Katsuda, T. Matsumura, C. Oshima
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 2432–2434 (2009)
https://doi.org/10.1116/1.3263248
Published: November 2009
View article titled, Thermodynamically stable nanotips of Au–Mo alloy
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Journal Articles

Oxidation behavior of In 95 Sn 5 solid solution

S. Ramasamy, V. Sabarinathan, Nipun Agarwal, David J. Smith
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 1670–1674 (2008)
https://doi.org/10.1116/1.2966429
Published: September 2008
View article titled, Oxidation behavior of In 95 Sn 5 solid solution
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Journal Articles

Investigation of Ta ∕ Ti ∕ Al ∕ Ni ∕ Au ohmic contact to Al Ga N ∕ Ga N heterostructure field-effect transistor

Ki Hong Kim, Chang Min Jeon, Sang Ho Oh, Jong-Lam Lee, Chan Gyung Park, Jung Hee Lee, Kyu Seok Lee, Yang Mo Koo
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 23, 322–326 (2005)
https://doi.org/10.1116/1.1856479
Published: January 2005
View article titled, Investigation of Ta ∕ Ti ∕ Al ∕ Ni ∕ Au ohmic contact to Al Ga N ∕ Ga N heterostructure field-effect transistor
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Journal Articles

Microtwin formation mechanism in GaP/AlGaInP/GaAs double heterostructure light-emitting diodes

W. Zeng, Y. S. Li, G. Ji, N. Y. Huang, J. J. Wang, X. F. Zong
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 19, 502–505 (2001)
https://doi.org/10.1116/1.1356067
Published: March 2001
View article titled, Microtwin formation mechanism in GaP/AlGaInP/GaAs double heterostructure light-emitting diodes
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Journal Articles

Defect structure of epitaxial ZnO films on (0001) sapphire studied by transmission electron microscopy

S.-H. Lim, D. Shindo, H.-B. Kang, K. Nakamura
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 19, 506–510 (2001)
https://doi.org/10.1116/1.1349210
Published: March 2001
View article titled, Defect structure of epitaxial ZnO films on (0001) sapphire studied by transmission electron microscopy
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Journal Articles

Structural characterization of ultrathin nanocrystalline silicon films formed by annealing amorphous silicon

J. Lützen, A. H. M. Kamal, M. N. Kozicki, D. K. Ferry, M. V. Sidorov, David J. Smith
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 16, 2802–2805 (1998)
https://doi.org/10.1116/1.590275
Published: September 1998
View article titled, Structural characterization of ultrathin nanocrystalline silicon films formed by annealing amorphous silicon
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Journal Articles

Kinetic roughening of Si surfaces and surfactant effect in low temperature molecular beam epitaxy growth

B. Gallas, I. Berbezier, J. Derrien, D. Gandolfo, J. Ruiz, V. A. Zagrebnov
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 16, 1564–1567 (1998)
https://doi.org/10.1116/1.589940
Published: May 1998
View article titled, Kinetic roughening of Si surfaces and surfactant effect in low temperature molecular beam epitaxy growth
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Journal Articles

Low‐damage specimen preparation technique for transmission electron microscopy using iodine gas‐assisted focused ion beam milling

Akira Yamaguchi, Takeshi Nishikawa
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 13, 962–966 (1995)
https://doi.org/10.1116/1.588213
Published: May 1995
View article titled, Low‐damage specimen preparation technique for transmission electron microscopy using iodine gas‐assisted focused ion beam milling
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Journal Articles

Microstructures of nanosize hydrogenated crystalline silicon studied by scanning tunneling microscopy

C. L. Bai, Z. H. Wang, C. C. Dai, P. C. Zhang, Y. L. He
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 12, 1823–1826 (1994)
https://doi.org/10.1116/1.587647
Published: May 1994
View article titled, Microstructures of nanosize hydrogenated crystalline silicon studied by scanning tunneling microscopy
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Journal Articles

Tunable generation of microscopic and mesoscopic step arrays on non‐(100)‐oriented GaAs: A new route to quantum wire structures by epitaxial growth

Klaus H. Ploog, Richard Nötzel, Matthias Ilg
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 11, 1675–1680 (1993)
https://doi.org/10.1116/1.586502
Published: July 1993
View article titled, Tunable generation of microscopic and mesoscopic step arrays on non‐(100)‐oriented GaAs: A new route to quantum wire structures by epitaxial growth
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Journal Articles

Structural characterization of encapsulated Au/Zn/Au ohmic contacts to p‐type GaAs

X. W. Lin, Z. Liliental‐Weber, J. Washburn, A. Piotrowska, E. Kaminska
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 11, 44–50 (1993)
https://doi.org/10.1116/1.586724
Published: January 1993
View article titled, Structural characterization of encapsulated Au/Zn/Au ohmic contacts to <em>p</em>‐type GaAs
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Journal Articles

Chemically assisted ion beam etching of InP and InSb using reactive flux of iodine and Ar+ beam

L. M. Bharadwaj, P. Bonhomme, J. Faure, G. Balossier, R. P. Bajpai
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 9, 1440–1444 (1991)
https://doi.org/10.1116/1.585447
Published: May 1991
View article titled, Chemically assisted ion beam etching of InP and InSb using reactive flux of iodine and Ar<sup>+</sup> beam
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Journal Articles

Growth of AlN/GaN layered structures by gas source molecular‐beam epitaxy

Z. Sitar, M. J. Paisley, B. Yan, J. Ruan, W. J. Choyke, R. F. Davis
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 8, 316–322 (1990)
https://doi.org/10.1116/1.585061
Published: March 1990
View article titled, Growth of AlN/GaN layered structures by gas source molecular‐beam epitaxy
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Journal Articles

A combined high‐resolution electron microscopy, x‐ray photoemission spectroscopy, and electrical properties study of the InP–SiO2 interface

O. L. Krivanek, Z. Liliental, J. F. Wager, R. G. Gan, S. M. Goodnick, C. W. Wilmsen
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 3, 1081–1086 (1985)
https://doi.org/10.1116/1.583056
Published: July 1985
View article titled, A combined high‐resolution electron microscopy, x‐ray photoemission spectroscopy, and electrical properties study of the InP–SiO<sub>2</sub> interface
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