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Journal Articles

Influence of the Cl₂ etching on the Al₂O₃/GaN metal–oxide–semiconductor interface

T. Meyer, S. Boubenia, C. Petit-Etienne, B. Salem, E. Pargon

J. Vac. Sci. Technol. B 40, 062208 (2022)

https://doi.org/10.1116/6.0002133

Published: November 2022

View articletitled, Influence of the Cl2 etching on the Al2O3/GaN metal–oxide–semiconductor interface

Journal Articles

Optimal temperature for development of poly(methylmethacrylate)

Bryan Cord, Jodie Lutkenhaus, Karl K. Berggren

J. Vac. Sci. Technol. B 25, 2013–2016 (2007)

https://doi.org/10.1116/1.2799978

Published: December 2007

View articletitled, Optimal temperature for development of poly(methylmethacrylate)

Journal Articles

Study of AlGaAs/GaAs quantum wells overgrown on in situ Cl 2 -etched GaAs substrates

M. López-López, J. Luyo-Alvarado, M. Meléndez-Lira, O. Cano-Aguilar, C. Megı́a-Garcı́a, J. Ortiz-López, G. Contreras-Puente, T. Ishikawa

J. Vac. Sci. Technol. B 18, 1553–1556 (2000)

https://doi.org/10.1116/1.591425

Published: May 2000

View articletitled, Study of AlGaAs/GaAs quantum wells overgrown on in situ Cl 2 -etched GaAs substrates

Journal Articles

In situ preparation of the semiconductor–superconductor interface: Nb contacts on InAs quantum wells

G. Bellomi, W. J. Mitchell, E. L. Hu

J. Vac. Sci. Technol. B 17, 2001–2004 (1999)

https://doi.org/10.1116/1.590861

Published: September 1999

View articletitled, In situ preparation of the semiconductor–superconductor interface: Nb contacts on InAs quantum wells

Journal Articles

Quantum dots fabricated in InP/InGaAs by free Cl₂ gas etching and metalorganic chemical vapor deposition regrowth

R. Panepucci, E. Reuter, P. Fay, C. Youtsey, J. Kluender, C. Caneau, J. J. Coleman, S. G. Bishop, I. Adesida

J. Vac. Sci. Technol. B 14, 3641–3645 (1996)

https://doi.org/10.1116/1.588741

Published: November 1996

View articletitled, Quantum dots fabricated in InP/InGaAs by free Cl2 gas etching and metalorganic chemical vapor deposition regrowth

Journal Articles

Fabrication of InP/InGaAs quantum wires by free Cl₂

R. Panepucci, C. Youtsey, D. A. Turnbull, S. Q. Gu, C. Caneau, S. G. Bishop, I. Adesida

J. Vac. Sci. Technol. B 13, 2752–2756 (1995)

https://doi.org/10.1116/1.588259

Published: November 1995

View articletitled, Fabrication of InP/InGaAs quantum wires by free Cl2

Journal Articles

Etching temperature dependence of the surface composition and reconstruction for Cl₂‐etched GaAs layers

N. Tanaka, M. López, I. Matsuyama, T. Ishikawa

J. Vac. Sci. Technol. B 13, 2250–2254 (1995)

https://doi.org/10.1116/1.588058

Published: November 1995

View articletitled, Etching temperature dependence of the surface composition and reconstruction for Cl2‐etched GaAs layers

Journal Articles

In situ GaAs/AlGaAs patterning using a thin epitaxial InGaAs layer mask as a negative‐type electron‐beam resist in Cl₂ gas

S. Kohmoto, Y. Sugimoto, N. Takado, K. Asakawa

J. Vac. Sci. Technol. B 12, 3699–3703 (1994)

https://doi.org/10.1116/1.587643

Published: November 1994

View articletitled, In situ GaAs/AlGaAs patterning using a thin epitaxial InGaAs layer mask as a negative‐type electron‐beam resist in Cl2 gas

Journal Articles

Electron cyclotron resonance ion stream etching with high uniformity and accuracy for metal–oxide–semiconductor gate fabrication

Chiharu Takahashi, Seitaro Matsuo

J. Vac. Sci. Technol. B 12, 3347–3350 (1994)

https://doi.org/10.1116/1.587510

Published: November 1994

View articletitled, Electron cyclotron resonance ion stream etching with high uniformity and accuracy for metal–oxide–semiconductor gate fabrication

Journal Articles

Characteristics of in situ Cl₂ etched/regrown GaAs/GaAs interfaces

D. S. L. Mui, T. A. Strand, B. J. Thibeault, L. A. Coldren, P. M. Petroff, E. L. Hu

J. Vac. Sci. Technol. B 11, 2266–2269 (1993)

https://doi.org/10.1116/1.586887

Published: November 1993

View articletitled, Characteristics of in situ Cl2 etched/regrown GaAs/GaAs interfaces

Journal Articles

Hydrogen plasma processing of GaAs and AlGaAs

Kent D. Choquette, R. S. Freund, M. Hong, H. S. Luftman, S. N. G. Chu, J. P. Mannaerts, R. C. Wetzel

J. Vac. Sci. Technol. B 11, 2025–2032 (1993)

https://doi.org/10.1116/1.586538

Published: November 1993

View articletitled, Hydrogen plasma processing of GaAs and AlGaAs

Journal Articles

Selective and uniform high rate etching of polysilicon in a magnetically confined microwave discharge

P. Gadgil, D. Dane, T. D. Mantei

J. Vac. Sci. Technol. B 11, 216–223 (1993)

https://doi.org/10.1116/1.586705

Published: March 1993

View articletitled, Selective and uniform high rate etching of polysilicon in a magnetically confined microwave discharge

Journal Articles

In situ overgrowth on GaAs patterned by focused‐ion‐beam‐assisted Cl₂ etching

Y. Sugimoto, M. Taneya, K. Akita

J. Vac. Sci. Technol. B 9, 2703–2708 (1991)

https://doi.org/10.1116/1.585676

Published: September 1991

View articletitled, In situ overgrowth on GaAs patterned by focused‐ion‐beam‐assisted Cl2 etching

Journal Articles

Assessing thermal Cl₂ etching and regrowth as methods for surface passivation

E. M. Clausen, Jr., J. P. Harbison, L. T. Florez, B. Van der Gaag

J. Vac. Sci. Technol. B 8, 1960–1965 (1990)

https://doi.org/10.1116/1.584883

Published: November 1990

View articletitled, Assessing thermal Cl2 etching and regrowth as methods for surface passivation

Journal Articles

Electron beam induced modification of GaAs surfaces for maskless thermal Cl₂ etching

E. M. Clausen, Jr., J. P. Harbison, C. C. Chang, H. G. Craighead, L. T. Florez

J. Vac. Sci. Technol. B 8, 1830–1835 (1990)

https://doi.org/10.1116/1.585168

Published: November 1990

View articletitled, Electron beam induced modification of GaAs surfaces for maskless thermal Cl2 etching

Journal Articles

Si surface study after Ar ion‐assisted Cl₂ etching

Nahomi Aoto Takasaki, Eiji Ikawa, Yukinori Kurogi

J. Vac. Sci. Technol. B 4, 806–811 (1986)

https://doi.org/10.1116/1.583516

Published: July 1986

View articletitled, Si surface study after Ar ion‐assisted Cl2 etching

Journal Articles

Surface studies of and a mass balance model for Ar⁺ ion‐assisted Cl₂ etching of Si

R. A. Barker, T. M. Mayer, W. C. Pearson

J. Vac. Sci. Technol. B 1, 37–42 (1983)

https://doi.org/10.1116/1.582539

Published: January 1983

View articletitled, Surface studies of and a mass balance model for Ar+ ion‐assisted Cl2 etching of Si

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Influence of the Cl₂ etching on the Al₂O₃/GaN metal–oxide–semiconductor interface

Optimal temperature for development of poly(methylmethacrylate)

Study of AlGaAs/GaAs quantum wells overgrown on in situ Cl 2 -etched GaAs substrates

In situ preparation of the semiconductor–superconductor interface: Nb contacts on InAs quantum wells

Quantum dots fabricated in InP/InGaAs by free Cl₂ gas etching and metalorganic chemical vapor deposition regrowth

Fabrication of InP/InGaAs quantum wires by free Cl₂

Etching temperature dependence of the surface composition and reconstruction for Cl₂‐etched GaAs layers

In situ GaAs/AlGaAs patterning using a thin epitaxial InGaAs layer mask as a negative‐type electron‐beam resist in Cl₂ gas

Electron cyclotron resonance ion stream etching with high uniformity and accuracy for metal–oxide–semiconductor gate fabrication

Characteristics of in situ Cl₂ etched/regrown GaAs/GaAs interfaces

Hydrogen plasma processing of GaAs and AlGaAs

Selective and uniform high rate etching of polysilicon in a magnetically confined microwave discharge

In situ overgrowth on GaAs patterned by focused‐ion‐beam‐assisted Cl₂ etching

Assessing thermal Cl₂ etching and regrowth as methods for surface passivation

Electron beam induced modification of GaAs surfaces for maskless thermal Cl₂ etching

Si surface study after Ar ion‐assisted Cl₂ etching

Surface studies of and a mass balance model for Ar⁺ ion‐assisted Cl₂ etching of Si

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