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Journal Articles

Interfacial reaction between the nickel-based superalloy and the Al₂O₃ crucible during vacuum induction melting

Guodong Zhang, Jinhong Zhang, Haoxue Yang, Jun Wang, Xianghong Liu, Jinshan Li

J. Vac. Sci. Technol. B 42, 054203 (2024)

https://doi.org/10.1116/6.0003860

Published: August 2024

View article titled, Interfacial reaction between the nickel-based superalloy and the Al2O3 crucible during vacuum induction melting

Journal Articles

Roughness-generation mechanism of Ru etching using Cl₂/O₂-based plasma for advanced interconnect

Miyako Matsui, Yohei Ishii, Lucas Kovatch, Kathryn Maier, Masaya Imai, Makoto Miura, Kenichi Kuwahara

J. Vac. Sci. Technol. B 42, 042208 (2024)

https://doi.org/10.1116/6.0003736

Published: July 2024

View article titled, Roughness-generation mechanism of Ru etching using Cl2/O2-based plasma for advanced interconnect

Journal Articles

Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications

Hryhorii Stanchu, Grey Abernathy, Joshua Grant, Fernando M. de Oliveira, Yuriy I. Mazur, Jifeng Liu, Wei Du, Baohua Li, Gregory J. Salamo, Shui-Qing Yu

J. Vac. Sci. Technol. B 42, 042802 (2024)

https://doi.org/10.1116/6.0003734

Published: July 2024

View article titled, Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications

Journal Articles

Cu_1−xAl_x films as alternatives to copper for advanced interconnect metallization

Jean-Philippe Soulié, Kiroubanand Sankaran, Geoffrey Pourtois, Johan Swerts, Zsolt Tőkei, Christoph Adelmann

J. Vac. Sci. Technol. B 42, 043203 (2024)

https://doi.org/10.1116/6.0003634

Published: June 2024

View article titled, Cu1−xAlx films as alternatives to copper for advanced interconnect metallization

Journal Articles

Comparison of GeSn alloy films prepared by ion implantation and remote plasma-enhanced chemical vapor deposition methods

X. Huang, S. Q. Lim, T. Ratcliff, L. A. Smillie, G. J. Grzybowski, B. B. Claflin, J. M. Warrender, J. S. Williams

J. Vac. Sci. Technol. B 42, 044001 (2024)

https://doi.org/10.1116/6.0003668

Published: June 2024

View article titled, Comparison of GeSn alloy films prepared by ion implantation and remote plasma-enhanced chemical vapor deposition methods

Journal Articles

Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications

Haochen Zhao, Suho Park, Guangyang Lin, Yuying Zhang, Tuofu Zhama, Chandan Samanta, Lorry Chang, Xiaofeng Zhu, Xu Feng, Kevin O. Díaz-Aponte, Lin Cong, Yuping Zeng

J. Vac. Sci. Technol. B 42, 042205 (2024)

https://doi.org/10.1116/6.0003561

Published: June 2024

View article titled, Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications

Includes: Supplementary data

Journal Articles

Temperature-induced degradation of GaN HEMT: An in situ heating study

Md Abu Jafar Rasel, Di Zhang, Aiping Chen, Melonie Thomas, Stephen D. House, Winson Kuo, John Watt, Ahmad Islam, Nicholas Glavin, M. Smyth, Aman Haque, Douglas E. Wolfe, Stephen J. Pearton

J. Vac. Sci. Technol. B 42, 032209 (2024)

https://doi.org/10.1116/6.0003490

Published: April 2024

View article titled, Temperature-induced degradation of GaN HEMT: An in situ heating study

Includes: Supplementary data

Journal Articles

Temperature-dependent morphology and composition of ultra-thin GeSn epilayers prepared by remote plasma enhanced chemical vapor deposition

Jiechao Jiang, Nonso Martin Chetuya, Efstathios I. Meletis, Joseph H. Ngai, Gordon J. Grzybowski, Bruce Claflin

J. Vac. Sci. Technol. B 42, 034001 (2024)

https://doi.org/10.1116/6.0003445

Published: March 2024

View article titled, Temperature-dependent morphology and composition of ultra-thin GeSn epilayers prepared by remote plasma enhanced chemical vapor deposition

Journal Articles

Field emission characterization of field-aligned carbon nanotubes synthesized in an environmental transmission electron microscope

Pascal Vincent, Federico Panciera, Ileana Florea, Anthony Ayari, Sorin Perisanu, Costel Sorin Cojocaru, Haifa Taoum, Chen Wei, Khakimjon Saidov, Utkur Mirsaidov, Ilias Aguili, Nicholas Blanchard, Pierre Legagneux, Stephen Thomas Purcell

J. Vac. Sci. Technol. B 42, 022802 (2024)

https://doi.org/10.1116/6.0003413

Published: March 2024

View article titled, Field emission characterization of field-aligned carbon nanotubes synthesized in an environmental transmission electron microscope

Includes: Supplementary data

Journal Articles

Improved optical and electrical response by glancing angle synthesized Al₂O₃ nanorod array device

Abhijit Das, Naorem Khelchand Singh, Laishram Robindro Singh, Mitra Barun Sarkar

J. Vac. Sci. Technol. B 42, 022211 (2024)

https://doi.org/10.1116/6.0003416

Published: March 2024

View article titled, Improved optical and electrical response by glancing angle synthesized Al2O3 nanorod array device

Journal Articles

In situ plasma pin-up clean process for backside bevel polymer removal, defect reduction, and queue time relaxation

Benjamin B. Ye, Ganquan Song, Jeff J. Ye

J. Vac. Sci. Technol. B 42, 022202 (2024)

https://doi.org/10.1116/6.0003300

Published: February 2024

View article titled, In situ plasma pin-up clean process for backside bevel polymer removal, defect reduction, and queue time relaxation

Journal Articles

Development of “GaSb-on-silicon” metamorphic substrates for optoelectronic device growth

Fatih F. Ince, Mega Frost, Darryl Shima, Thomas J. Rotter, Sadhvikas Addamane, Chadwick L. Canedy, Stephanie Tomasulo, Chul Soo Kim, William W. Bewley, Igor Vurgaftman, Jerry R. Meyer, Ganesh Balakrishnan

J. Vac. Sci. Technol. B 42, 012205 (2024)

https://doi.org/10.1116/6.0003211

Published: January 2024

View article titled, Development of “GaSb-on-silicon” metamorphic substrates for optoelectronic device growth

Journal Articles

Electron emission properties of titanium nitride coated volcano-structured silicon emitters

Hiromasa Murata, Katsuhisa Murakami, Masayoshi Nagao

J. Vac. Sci. Technol. B 42, 013203 (2024)

https://doi.org/10.1116/6.0003234

Published: January 2024

View article titled, Electron emission properties of titanium nitride coated volcano-structured silicon emitters

Journal Articles

Effect of varying threading dislocation densities on the optical properties of InGaN/GaN quantum wells with intentionally created V-shaped pits

Kaitian Zhang, Chenxi Hu, Vijay Gopal Thirupakuzi Vangipuram, Lingyu Meng, Christopher Chae, Menglin Zhu, Jinwoo Hwang, Kathleen Kash, Hongping Zhao

J. Vac. Sci. Technol. B 41, 062207 (2023)

https://doi.org/10.1116/6.0003141

Published: November 2023

View article titled, Effect of varying threading dislocation densities on the optical properties of InGaN/GaN quantum wells with intentionally created V-shaped pits

Journal Articles

Study of surface damage in silicon by irradiation with focused rubidium ions using a cold-atom ion source

S. Xu, Y. Li, M. A. Verheijen, E. R. Kieft, E. J. D. Vredenbregt

J. Vac. Sci. Technol. B 41, 042804 (2023)

https://doi.org/10.1116/6.0002643

Published: June 2023

View article titled, Study of surface damage in silicon by irradiation with focused rubidium ions using a cold-atom ion source

Includes: Supplementary data

Journal Articles

Ohmic contact structures on β-Ga₂O₃ with n+ β-Ga₂O₃ pulsed laser deposition layers

Elizabeth V. Favela, Hyung Min Jeon, Kevin D. Leedy, Kun Zhang, Szu-Wei Tung, Francelia Sanchez Escobar, C. V. Ramana, Lisa M. Porter

J. Vac. Sci. Technol. B 41, 032205 (2023)

https://doi.org/10.1116/6.0002620

Published: May 2023

View article titled, Ohmic contact structures on β-Ga2O3 with n+ β-Ga2O3 pulsed laser deposition layers

Includes: Supplementary data

Journal Articles

Characterization of GaN structures for power electronics by secondary ion mass spectrometry and atomic force microscope approach

Tarek Spelta, Marc Veillerot, Eugénie Martinez, Nicolas Chevalier, Denis Mariolle, Roselyne Templier, Bassem Salem, Pedro Fernandes Paes Pinto Rocha, Laura Vauche, Sarah Boubenia, Bérangère Hyot

J. Vac. Sci. Technol. B 41, 034003 (2023)

https://doi.org/10.1116/6.0002573

Published: April 2023

View article titled, Characterization of GaN structures for power electronics by secondary ion mass spectrometry and atomic force microscope approach

Journal Articles

Thickness dependent field emission study of LaB₆ coated Si nanowire arrays

Amol Deore, Krishna Jagtap, Onkar Bhorade, Angela Vella, Mahendra More

J. Vac. Sci. Technol. B 41, 022806 (2023)

https://doi.org/10.1116/6.0002464

Published: March 2023

View article titled, Thickness dependent field emission study of LaB6 coated Si nanowire arrays

Includes: Supplementary data

Journal Articles

Implementation of high-performance and high-yield nanoscale hafnium zirconium oxide based ferroelectric tunnel junction devices on 300 mm wafer platform

Maximilian Liehr, Jubin Hazra, Karsten Beckmann, Vineetha Mukundan, Ioannis Alexandrou, Timothy Yeow, Joseph Race, Kandabara Tapily, Steven Consiglio, Santosh K. Kurinec, Alain C. Diebold, Nathaniel Cady

J. Vac. Sci. Technol. B 41, 012805 (2023)

https://doi.org/10.1116/6.0002097

Published: January 2023

View article titled, Implementation of high-performance and high-yield nanoscale hafnium zirconium oxide based ferroelectric tunnel junction devices on 300 mm wafer platform

Journal Articles

System for interpolating work function for a cold-field emitter

A. Bahm

J. Vac. Sci. Technol. B 41, 014201 (2023)

https://doi.org/10.1116/6.0002283

Published: December 2022

View article titled, System for interpolating work function for a cold-field emitter

NARROW

Topics

Interfacial reaction between the nickel-based superalloy and the Al₂O₃ crucible during vacuum induction melting

Roughness-generation mechanism of Ru etching using Cl₂/O₂-based plasma for advanced interconnect

Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications

Cu_1−xAl_x films as alternatives to copper for advanced interconnect metallization

Comparison of GeSn alloy films prepared by ion implantation and remote plasma-enhanced chemical vapor deposition methods

Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications

Temperature-induced degradation of GaN HEMT: An in situ heating study

Temperature-dependent morphology and composition of ultra-thin GeSn epilayers prepared by remote plasma enhanced chemical vapor deposition

Field emission characterization of field-aligned carbon nanotubes synthesized in an environmental transmission electron microscope

Improved optical and electrical response by glancing angle synthesized Al₂O₃ nanorod array device

In situ plasma pin-up clean process for backside bevel polymer removal, defect reduction, and queue time relaxation

Development of “GaSb-on-silicon” metamorphic substrates for optoelectronic device growth

Electron emission properties of titanium nitride coated volcano-structured silicon emitters

Effect of varying threading dislocation densities on the optical properties of InGaN/GaN quantum wells with intentionally created V-shaped pits

Study of surface damage in silicon by irradiation with focused rubidium ions using a cold-atom ion source

Ohmic contact structures on β-Ga₂O₃ with n+ β-Ga₂O₃ pulsed laser deposition layers

Characterization of GaN structures for power electronics by secondary ion mass spectrometry and atomic force microscope approach

Thickness dependent field emission study of LaB₆ coated Si nanowire arrays

Implementation of high-performance and high-yield nanoscale hafnium zirconium oxide based ferroelectric tunnel junction devices on 300 mm wafer platform

System for interpolating work function for a cold-field emitter

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