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Journal Articles
Scalable fabrication of vertically arranged Bi2Se3 crossbar arrays for memristive device applications
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J. Vac. Sci. Technol. B 42, 063203 (2024)
Published: October 2024
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Room-temperature nanostructured PbSe/CdSe mid-infrared photodetector: Annealing effects
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J. Vac. Sci. Technol. B 42, 012204 (2024)
Published: January 2024
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III–V semiconductor devices grown by metalorganic chemical vapor deposition—The development of the Swiss Army Knife for semiconductor epitaxial growth
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J. Vac. Sci. Technol. B 41, 060803 (2023)
Published: October 2023
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J. Vac. Sci. Technol. B 40, 052804 (2022)
Published: September 2022
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Thermal degradation behavior of self-assembled monolayer surfactant on silicon substrate
Available to Purchase
J. Vac. Sci. Technol. B 38, 032602 (2020)
Published: April 2020
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Probing doping conformality in fin shaped field effect transistor structures using resistors
Available to PurchaseW. Vandervorst, M. Jurczak, J.-L. Everaert, B. J. Pawlak, R. Duffy, J.-I. Del-Agua-Bomiquel, T. Poon
J. Vac. Sci. Technol. B 26, 396–401 (2008)
Published: January 2008
Journal Articles
Vapor phase deposition of oligo(phenylene ethynylene) molecules for use in molecular electronic devices
Available to PurchaseNadine Gergel-Hackett, Michael J. Cabral, Timothy L. Pernell, Lloyd R. Harriott, John C. Bean, Bo Chen, Meng Lu, James M. Tour
J. Vac. Sci. Technol. B 25, 252–257 (2007)
Published: January 2007
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Advanced atomic force microscopy probes: Wear resistant designs
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J. Vac. Sci. Technol. B 23, 3090–3093 (2005)
Published: December 2005
Journal Articles
Topas-based lab-on-a-chip microsystems fabricated by thermal nanoimprint lithography
Available to PurchaseB. Bilenberg, M. Hansen, D. Johansen, V. Özkapici, C. Jeppesen, P. Szabo, I. M. Obieta, O. Arroyo, J. O. Tegenfeldt, A. Kristensen
J. Vac. Sci. Technol. B 23, 2944–2949 (2005)
Published: December 2005
Journal Articles
Synthesis of multiwalled carbon nanotubes using C 14 H 10 O 7 W catalyst
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J. Vac. Sci. Technol. B 23, 458–462 (2005)
Published: March 2005
Journal Articles
Structural properties of AlGaN/GaN heterostructures on Si(111) substrates suitable for high-electron mobility transistors
Available to PurchaseS. Kaiser, M. Jakob, J. Zweck, W. Gebhardt, O. Ambacher, R. Dimitrov, A. T. Schremer, J. A. Smart, J. R. Shealy
J. Vac. Sci. Technol. B 18, 733–740 (2000)
Published: March 2000