1-20 of 25
Surface hardening
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Insights from evaluation of surface cracks in surface-hardened polydimethylsiloxane by means of video analysis

Miriam Schröer, Hella-Christin Scheer
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 39, 013001 (2021)
https://doi.org/10.1116/6.0000550
Published: December 2020
View articletitled, Insights from evaluation of surface cracks in surface-hardened polydimethylsiloxane by means of video analysis
Open the PDF for Insights from evaluation of surface cracks in surface-hardened polydimethylsiloxane by means of video analysis in another window
Journal Articles

Low reflection Fresnel lenses via double imprint combined with vacuum-UV surface hardening

Christian Steinberg, Nour Al-Hussainawi, Marc Papenheim, Andre Mayer, Hella-Christin Scheer, Maria Matschuk, Henrik Pranov
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 06G306 (2017)
https://doi.org/10.1116/1.4991863
Published: October 2017
View articletitled, Low reflection Fresnel lenses via double imprint combined with vacuum-UV surface hardening
Open the PDF for Low reflection Fresnel lenses via double imprint combined with vacuum-UV surface hardening in another window
Journal Articles

Electronic properties and charge storage effect of amorphous SiN passivated nanocrystalline silicon

Dameng Tan, Pei Zhang, Jie Xu, Yunqing Cao, Peng Lu, Wei Li, Jun Xu, Kunji Chen
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 041205 (2015)
https://doi.org/10.1116/1.4923228
Published: June 2015
View articletitled, Electronic properties and charge storage effect of amorphous SiN passivated nanocrystalline silicon
Open the PDF for Electronic properties and charge storage effect of amorphous SiN passivated nanocrystalline silicon in another window
Journal Articles

Laser nitriding of niobium for application to superconducting radio-frequency accelerator cavities

S. Singaravelu, J. M. Klopf, G. Krafft, M. J. Kelley
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 061803 (2011)
https://doi.org/10.1116/1.3656380
Published: November 2011
View articletitled, Laser nitriding of niobium for application to superconducting radio-frequency accelerator cavities
Open the PDF for Laser nitriding of niobium for application to superconducting radio-frequency accelerator cavities in another window
Journal Articles

Tool wear study in diamond turning of steels

T. F. Dai, F. Z. Fang, X. T. Hu
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 1335–1339 (2009)
https://doi.org/10.1116/1.3049516
Published: May 2009
View articletitled, Tool wear study in diamond turning of steels
Open the PDF for Tool wear study in diamond turning of steels in another window
Journal Articles

Diamond milling of nitrided steels for optical mold making

J. Osmer, R. Gläbe, O. Riemer, E. Brinksmeier, S. Bütepage, F. Hoffmann
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 1238–1240 (2009)
https://doi.org/10.1116/1.3049512
Published: May 2009
View articletitled, Diamond milling of nitrided steels for optical mold making
Open the PDF for Diamond milling of nitrided steels for optical mold making in another window
Journal Articles

Impact of nitridation on recoverable and permanent negative bias temperature instability degradation in high- k /metal-gate p -type metal oxide semiconductor field effect transistors

M. Aoulaiche, B. Kaczer, Ph. J. Roussel, R. O’Connor, M. Houssa, S. De Gendt, H. E. Maes, G. Groeseneken
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 463–467 (2009)
https://doi.org/10.1116/1.3058740
Published: February 2009
View articletitled, Impact of nitridation on recoverable and permanent negative bias temperature instability degradation in high- k /metal-gate p -type metal oxide semiconductor field effect transistors
Open the PDF for Impact of nitridation on recoverable and permanent negative bias temperature instability degradation in high- k /metal-gate p -type metal oxide semiconductor field effect transistors in another window
Journal Articles

Multilayer soft mold for UV imprinting the 50 nm pitch dot array

Duhyun Lee, E. H. Cho, H. S. Kim, B. K. Lee, M. B Lee, J. S. Sohn, C. H. Lee, S. J. Suh
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 514–517 (2008)
https://doi.org/10.1116/1.2839880
Published: March 2008
View articletitled, Multilayer soft mold for UV imprinting the 50 nm pitch dot array
Open the PDF for Multilayer soft mold for UV imprinting the 50 nm pitch dot array in another window
Journal Articles

Nanosized tungsten carbide for N O x reduction

A. K. Rumaiz, H. Y. Lin, I. Baldytchev, S. Ismat Shah
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 25, 893–898 (2007)
https://doi.org/10.1116/1.2738488
Published: May 2007
View articletitled, Nanosized tungsten carbide for N O x reduction
Open the PDF for Nanosized tungsten carbide for N O x reduction in another window
Journal Articles

Physical and electrical properties of plasma nitrided germanium oxynitride

Takuya Sugawara, Raghavasimhan Sreenivasan, Paul C. McIntyre
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 24, 2449–2456 (2006)
https://doi.org/10.1116/1.2348886
Published: September 2006
View articletitled, Physical and electrical properties of plasma nitrided germanium oxynitride
Open the PDF for Physical and electrical properties of plasma nitrided germanium oxynitride in another window
Journal Articles

Investigation of boron penetration through decoupled plasma nitrided gate oxide using backside secondary ion mass spectrometry depth profiling

K. L. Yeo, A. T. S. Wee, R. Liu, F. F. Zhou, A. See
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 21, 193–197 (2003)
https://doi.org/10.1116/1.1535925
Published: January 2003
View articletitled, Investigation of boron penetration through decoupled plasma nitrided gate oxide using backside secondary ion mass spectrometry depth profiling
Open the PDF for Investigation of boron penetration through decoupled plasma nitrided gate oxide using backside secondary ion mass spectrometry depth profiling in another window
Journal Articles

Edge transistor elimination in oxide trench isolated N-channel metal–oxide–semiconductor field effect transistors

Jianan Yang, John P. Denton, Gerold W. Neudeck
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 19, 327–332 (2001)
https://doi.org/10.1116/1.1358854
Published: March 2001
View articletitled, Edge transistor elimination in oxide trench isolated N-channel metal–oxide–semiconductor field effect transistors
Open the PDF for Edge transistor elimination in oxide trench isolated N-channel metal–oxide–semiconductor field effect transistors in another window
Journal Articles

Enhancement in field emission of silicon microtips by bias-assisted carburization

P. D. Kichambare, F. G. Tarntair, L. C. Chen, K. H. Chen, H. C. Cheng
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 18, 2722–2729 (2000)
https://doi.org/10.1116/1.1320809
Published: November 2000
View articletitled, Enhancement in field emission of silicon microtips by bias-assisted carburization
Open the PDF for Enhancement in field emission of silicon microtips by bias-assisted carburization in another window
Journal Articles

Surface treatment of pure and alloyed aluminum using a new plasma-based ion implanter apparatus

D. Popovici, B. Terreault, M. Bolduc, R. W. Paynter, G. G. Ross, A. H. Sarkissian, B. L. Stansfield
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 17, 859–862 (1999)
https://doi.org/10.1116/1.590651
Published: March 1999
View articletitled, Surface treatment of pure and alloyed aluminum using a new plasma-based ion implanter apparatus
Open the PDF for Surface treatment of pure and alloyed aluminum using a new plasma-based ion implanter apparatus in another window
Journal Articles

Nitriding stainless steels at moderate temperature: Time- and depth-resolved characterization of the near surface composition during the nitriding process

S. Parascandola, O. Kruse, E. Richter, W. Moeller
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 17, 855–858 (1999)
https://doi.org/10.1116/1.590650
Published: March 1999
View articletitled, Nitriding stainless steels at moderate temperature: Time- and depth-resolved characterization of the near surface composition during the nitriding process
Open the PDF for Nitriding stainless steels at moderate temperature: Time- and depth-resolved characterization of the near surface composition during the nitriding process in another window
Journal Articles

Electrical properties of ion beam sputtered and ion assisted SiO 2 ,   SiO X N Y , and SiN X films on silicon

M. F. Lambrinos, R. Valizadeh, J. S. Colligon
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 16, 589–598 (1998)
https://doi.org/10.1116/1.589868
Published: March 1998
View articletitled, Electrical properties of ion beam sputtered and ion assisted SiO 2 ,   SiO X N Y , and SiN X films on silicon
Open the PDF for Electrical properties of ion beam sputtered and ion assisted SiO 2 ,   SiO X N Y , and SiN X films on silicon in another window
Journal Articles

Surface nitridation of silicon dioxide with a high density nitrogen plasma

R. Kraft, T. P. Schneider, W. W. Dostalik, S. Hattangady
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 15, 967–970 (1997)
https://doi.org/10.1116/1.589516
Published: July 1997
View articletitled, Surface nitridation of silicon dioxide with a high density nitrogen plasma
Open the PDF for Surface nitridation of silicon dioxide with a high density nitrogen plasma in another window
Journal Articles

Ammonia nitridation of thermal polyoxide to eliminate epitaxial ambient induced dielectric pinhole formation

W. W. Fultz, G. W. Neudeck
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 14, 3465–3469 (1996)
https://doi.org/10.1116/1.588781
Published: November 1996
View articletitled, Ammonia nitridation of thermal polyoxide to eliminate epitaxial ambient induced dielectric pinhole formation
Open the PDF for Ammonia nitridation of thermal polyoxide to eliminate epitaxial ambient induced dielectric pinhole formation in another window
Journal Articles

Field emission characteristics of transition‐metal nitrides

Michiaki Endo, Hideaki Nakane, Hiroshi Adachi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 14, 2114–2118 (1996)
https://doi.org/10.1116/1.588882
Published: May 1996
View articletitled, Field emission characteristics of transition‐metal nitrides
Open the PDF for Field emission characteristics of transition‐metal nitrides in another window
Journal Articles

Improved emission stability of carburized HfC〈100〉 and ultrasharp tungsten field emitters

Ming L. Yu, Brian W. Hussey, Ernst Kratschmer, T. H. Philip Chang, William A. Mackie
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 13, 2436–2440 (1995)
https://doi.org/10.1116/1.588016
Published: November 1995
View articletitled, Improved emission stability of carburized HfC〈100〉 and ultrasharp tungsten field emitters
Open the PDF for Improved emission stability of carburized HfC〈100〉 and ultrasharp tungsten field emitters in another window