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Journal Articles

Stable and low loss oxide layer on α-Ta (110) film for superconducting qubits

Editor’s Pick
Zengqian Ding, Boyi Zhou, Tao Wang, Lina Yang, Yanfu Wu, Xiao Cai, Kanglin Xiong, Jiagui Feng
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 022209 (2024)
https://doi.org/10.1116/6.0003368
Published: February 2024
View article titled, Stable and low loss oxide layer on α-Ta (110) film for superconducting qubits
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Includes: Supplementary data
Journal Articles

Extending the metal-induced gap state model of Schottky barriers

Scilight
John Robertson, Yuzheng Guo, Zhaofu Zhang, Hongfei Li
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 38, 042208 (2020)
https://doi.org/10.1116/6.0000164
Published: July 2020
View article titled, Extending the metal-induced gap state model of Schottky barriers
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Journal Articles

Effect of annealing of NbLaO dielectric on the electrical properties of ZnO thin-film transistor

Yurong Liu, Yinxue Xiang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 37, 062202 (2019)
https://doi.org/10.1116/1.5126044
Published: October 2019
View article titled, Effect of annealing of NbLaO dielectric on the electrical properties of ZnO thin-film transistor
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Journal Articles

Numerical simulations of perovskite thin-film solar cells using a CdS hole blocking layer

Nisha Devi, Khursheed A. Parrey, Anver Aziz, Shouvik Datta
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 04G105 (2018)
https://doi.org/10.1116/1.5026163
Published: July 2018
View article titled, Numerical simulations of perovskite thin-film solar cells using a CdS hole blocking layer
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Journal Articles

Temperature-dependent electrical instability of p-type SnO thin-film transistors

Jeong-Hwan Lee, Yong-Jin Choi, Chan-Yong Jeong, Chang-Woo Lee, Hyuck-In Kwon
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 041210 (2016)
https://doi.org/10.1116/1.4949558
Published: May 2016
View article titled, Temperature-dependent electrical instability of p-type SnO thin-film transistors
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Journal Articles

Electrical characterization of dry and wet processed interface layer in Ge/High-K devices

Y. M. Ding, D. Misra, M. N. Bhuyian, Kandabara Tapily, Robert D. Clark, Steve Consiglio, Cory S. Wajda, Gert J. Leusink
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 021203 (2016)
https://doi.org/10.1116/1.4943559
Published: March 2016
View article titled, Electrical characterization of dry and wet processed interface layer in Ge/High-K devices
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Journal Articles

Fluorine interface treatments within the gate stack for defect passivation in 28 nm high-k metal gate technology

Maximilian Drescher, Andreas Naumann, Jonas Sundqvist, Elke Erben, Carsten Grass, Martin Trentzsch, Florian Lazarevic, Roman Leitsmann, Philipp Plaenitz
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 022204 (2015)
https://doi.org/10.1116/1.4913947
Published: March 2015
View article titled, Fluorine interface treatments within the gate stack for defect passivation in 28 nm high-k metal gate technology
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Journal Articles

Oxide structure-dependent interfacial layer defects of HfAlO/SiO2/Si stack analyzed by conductance method

Yi Ming Ding, Durgamadhab Misra
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 021203 (2015)
https://doi.org/10.1116/1.4913280
Published: February 2015
View article titled, Oxide structure-dependent interfacial layer defects of HfAlO/SiO<sub>2</sub>/Si stack analyzed by conductance method
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Journal Articles

Chemical kinetics of the hydrogen-GePb1 defect interaction at the (100)GexSi1−x/SiO2 interface

Nguyen Hoang Thoan, Andre Stesmans, Anh Phuc Duc Nguyen, Koen Keunen, Valery V. Afanas'ev
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 31, 010603 (2013)
https://doi.org/10.1116/1.4773000
Published: January 2013
View article titled, Chemical kinetics of the hydrogen-GeP<sub>b1</sub> defect interaction at the (100)Ge<sub>x</sub>Si<sub>1−x</sub>/SiO<sub>2</sub> interface
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Journal Articles

Analysis of the effect of germanium preamorphization on interface defects and leakage current for high- k metal-oxide-semiconductor field-effect transistor

G. Roll, S. Jakschik, M. Goldbach, A. Wachowiak, T. Mikolajick, L. Frey
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 01AA05 (2011)
https://doi.org/10.1116/1.3521479
Published: January 2011
View article titled, Analysis of the effect of germanium preamorphization on interface defects and leakage current for high- k metal-oxide-semiconductor field-effect transistor
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Journal Articles

Current instabilities in rare-earth oxides- HfO 2 gate stacks grown on germanium based metal-oxide-semiconductor devices due to Maxwell–Wagner instabilities and dielectrics relaxation

M. S. Rahman, E. K. Evangelou, A. Dimoulas, G. Mavrou, S. Galata
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 01AB06 (2011)
https://doi.org/10.1116/1.3532946
Published: January 2011
View article titled, Current instabilities in rare-earth oxides- HfO 2 gate stacks grown on germanium based metal-oxide-semiconductor devices due to Maxwell–Wagner instabilities and dielectrics relaxation
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Journal Articles

X-ray diffraction and electron paramagnetic resonance study of porous 6 H -SiC

T. V. Torchynska, V. Bratus, J. Palacios Gomez
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 849–853 (2009)
https://doi.org/10.1116/1.3043462
Published: March 2009
View article titled, X-ray diffraction and electron paramagnetic resonance study of porous 6 H -SiC
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Journal Articles

Photoluminescence of bioconjugated core-shell Cd Se ∕ Zn S quantum dots

T. V. Torchynska, J. Douda, P. A. Calva, S. S. Ostapenko, R. Peña Sierra
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 836–838 (2009)
https://doi.org/10.1116/1.3032904
Published: March 2009
View article titled, Photoluminescence of bioconjugated core-shell Cd Se ∕ Zn S quantum dots
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Journal Articles

Impact of near-surface native point defects, chemical reactions, and surface morphology on ZnO interfaces

D. R. Doutt, C. Zgrabik, H. L. Mosbacker, L. J. Brillson
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 1477–1482 (2008)
https://doi.org/10.1116/1.2919158
Published: August 2008
View article titled, Impact of near-surface native point defects, chemical reactions, and surface morphology on ZnO interfaces
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Journal Articles

Instability of junctions formed by low energy B implant and low temperature solid phase epitaxy growth

Lei Zhu, M. Martin, M. Hollander, Y. Q. Wang, Q. Chen, K. Ma, X. K. Yu, J. R. Liu, Wei-Kan Chu, Lin Shao
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 25, 1276–1279 (2007)
https://doi.org/10.1116/1.2749529
Published: July 2007
View article titled, Instability of junctions formed by low energy B implant and low temperature solid phase epitaxy growth
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Journal Articles

Mechanism of dopant segregation to SiO 2 / Si (001) interfaces

J. Dabrowski, R. A. Casali, H.-J. Müssig, R. Baierle, M. J. Caldas, V. Zavodinsky
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 18, 2160–2164 (2000)
https://doi.org/10.1116/1.1306310
Published: July 2000
View article titled, Mechanism of dopant segregation to SiO 2 / Si (001) interfaces
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Journal Articles

Depth-resolved spectroscopy of interface defects in AlGaN/GaN heterostructure field effect transistors device structures

A. P. Young, J. Bae, L. J. Brillson, M. J. Murphy, W. J. Schaff
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 18, 2309–2312 (2000)
https://doi.org/10.1116/1.1305283
Published: July 2000
View article titled, Depth-resolved spectroscopy of interface defects in AlGaN/GaN heterostructure field effect transistors device structures
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Journal Articles

Hydrogen diffusion through silicon/silicon dioxide interfaces

N. H. Nickel
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 18, 1770–1772 (2000)
https://doi.org/10.1116/1.591469
Published: May 2000
View article titled, Hydrogen diffusion through silicon/silicon dioxide interfaces
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Journal Articles

Characterization of an n -GaAs layer grown on a GaAs substrate cleaned by an electron cyclotron resonance hydrogen plasma

Yoshifumi Takanashi, Naoto Kondo
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 16, 216–222 (1998)
https://doi.org/10.1116/1.589782
Published: January 1998
View article titled, Characterization of an n -GaAs layer grown on a GaAs substrate cleaned by an electron cyclotron resonance hydrogen plasma
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Journal Articles

Effect of interface defect formation on carrier diffusion and luminescence in In0.2Ga0.8As/AlxGa1−xAs quantum wells

D. H. Rich, K. Rammohan, H. T. Lin, Y. Tang, M. Meshkinpour, M. S. Goorsky
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 14, 2922–2935 (1996)
https://doi.org/10.1116/1.588936
Published: July 1996
View article titled, Effect of interface defect formation on carrier diffusion and luminescence in In<sub>0.2</sub>Ga<sub>0.8</sub>As/Al<sub><em>x</em></sub>Ga<sub>1−<em>x</em></sub>As quantum wells
Open the PDF for Effect of interface defect formation on carrier diffusion and luminescence in In<sub>0.2</sub>Ga<sub>0.8</sub>As/Al<sub><em>x</em></sub>Ga<sub>1−<em>x</em></sub>As quantum wells in another window