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Journal Articles

Effect of quality improvement in active region on temperature characteristics of GaN-based ultraviolet laser diode

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Yujie Huang, Jing Yang, Degang Zhao, Zongshun Liu, Feng Liang, Ping Chen
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 43, 032204 (2025)
https://doi.org/10.1116/6.0004363
Published: April 2025
View articletitled, Effect of quality improvement in active region on temperature characteristics of GaN-based ultraviolet laser diode
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Journal Articles

Ultrathin tantalum films for Schottky contacts on 4H silicon carbide

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Renato M. Beraldo, Rodrigo R. César, Melissa Mederos, Jacilene M. Medeiros, Andrei Alaferdov, Érick A. Santos, Ednan Joanni, Thebano E. A. Santos, Ricardo C. Teixeira, Marcos V. Puydinger dos Santos, Renato A. Minamisawa, José Alexandre Diniz
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 43, 033202 (2025)
https://doi.org/10.1116/6.0004313
Published: April 2025
View articletitled, Ultrathin tantalum films for Schottky contacts on 4H silicon carbide
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Journal Articles

Experimental current-voltage-temperature and thermal sensitivity behaviors of an ideal Schottky barrier diode over a wide temperature range

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Hasan Efeoǧlu, Abdulmecit Turut
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 43, 022212 (2025)
https://doi.org/10.1116/6.0004273
Published: March 2025
View articletitled, Experimental current-voltage-temperature and thermal sensitivity behaviors of an ideal Schottky barrier diode over a wide temperature range
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Journal Articles

Observation of low-resistance Al and Ni p-type ohmic contacts to dilute GeC and GeCSn alloys

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Jibesh K. Saha, Saif A. A. Taqy, Pallab K. Sarkar, Imteaz Rahaman, Augustus W. Arbogast, Tuhin Dey, Andrei Dolocan, Md. Reaz Rahman Munna, Khorshed Alam, Daniel Wasserman, Seth R. Bank, Mark A. Wistey
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 062211 (2024)
https://doi.org/10.1116/6.0003739
Published: December 2024
View articletitled, Observation of low-resistance Al and Ni p-type ohmic contacts to dilute GeC and GeCSn alloys
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Journal Articles

Design, modeling, and fabrication of high frequency Oersted lines for electron spin manipulation in silicon based quantum devices

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Mark-Yves Gaunin, Pradeep Namboodiri, Alessandro Restelli, Ranjit Kashid, Xiqiao Wang, Fan Fei, Brian Courts, Utsav, Vijith Kamalon Pulikodan, Jonathan Wyrick, Richard Silver
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 062802 (2024)
https://doi.org/10.1116/6.0004051
Published: October 2024
View articletitled, Design, modeling, and fabrication of high frequency Oersted lines for electron spin manipulation in silicon based quantum devices
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Journal Articles

Numerical analysis of Gaussian potential patches model depending on the substrate doping in inhomogeneous Schottky barrier diodes over a wide temperature range

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Abdulmecit Turut
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 062201 (2024)
https://doi.org/10.1116/6.0003898
Published: October 2024
View articletitled, Numerical analysis of Gaussian potential patches model depending on the substrate doping in inhomogeneous Schottky barrier diodes over a wide temperature range
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Journal Articles

Current–voltage characteristics of Ag/Nb:SrTiO3/Ag and Au/Nb:SrTiO3/Ag heterostructures

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Weibai Bian, Chen Han, Jiqiang Jia, Xiaoqin Liu
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 054005 (2024)
https://doi.org/10.1116/6.0003843
Published: September 2024
View articletitled, Current–voltage characteristics of Ag/Nb:SrTiO3/Ag and Au/Nb:SrTiO3/Ag heterostructures
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Journal Articles

Radio frequency side-gate nanoscale vacuum channel triode

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Zhihua Shen, Qiaoning Li, Bin Ge, Xiao Wang, Shengli Wu
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 052801 (2024)
https://doi.org/10.1116/6.0003823
Published: August 2024
View articletitled, Radio frequency side-gate nanoscale vacuum channel triode
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Journal Articles

Mitigation of electronic crosstalk interference in graphene transistor biosensors

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Rahul Deshmukh, Alexander James Wright, Moeid Jamalzadeh, Hashem Hassan Nasralla, Elisa Riedo, Davood Shahrjerdi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 040602 (2024)
https://doi.org/10.1116/6.0003783
Published: July 2024
View articletitled, Mitigation of electronic crosstalk interference in graphene transistor biosensors
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Journal Articles

Enhanced contact resistance reduction in MoS2 transistors via ultrathin LiPON electrode interface doping

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Ting Pan, Yonghuang Wu, Run Shi, Haowen Liu, Ruoyu Tong, Ruixuan Peng, Bochen Zhao, Kai Liu, Yuegang Zhang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 042803 (2024)
https://doi.org/10.1116/5.0215419
Published: July 2024
View articletitled, Enhanced contact resistance reduction in MoS2 transistors via ultrathin LiPON electrode interface doping
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Journal Articles

Effect of inductively coupled plasma etch on the interface barrier behavior of (001) β-Ga2O3 Schottky barrier diode

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Hoon-Ki Lee, V. Janardhanam, Woojin Chang, Kyujun Cho, Chel-Jong Choi, Jae Kyoung Mun
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 042204 (2024)
https://doi.org/10.1116/6.0003608
Published: June 2024
View articletitled, Effect of inductively coupled plasma etch on the interface barrier behavior of (001) β-Ga2O3 Schottky barrier diode
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Journal Articles

Temperature-induced degradation of GaN HEMT: An in situ heating study

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Md Abu Jafar Rasel, Di Zhang, Aiping Chen, Melonie Thomas, Stephen D. House, Winson Kuo, John Watt, Ahmad Islam, Nicholas Glavin, M. Smyth, Aman Haque, Douglas E. Wolfe, Stephen J. Pearton
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 032209 (2024)
https://doi.org/10.1116/6.0003490
Published: April 2024
View articletitled, Temperature-induced degradation of GaN HEMT: An in situ heating study
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Includes: Supplementary data
Journal Articles

Analysis of temperature-dependent current–voltage characteristics of Schottky diodes by the modified thermionic emission current model

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Abdulmecit Turut
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 032201 (2024)
https://doi.org/10.1116/6.0003463
Published: March 2024
View articletitled, Analysis of temperature-dependent current–voltage characteristics of Schottky diodes by the modified thermionic emission current model
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Journal Articles

Sodium adsorption on nanometer-thick TiO2 channel thin-film transistors for enhanced drain currents

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Ryo Miyazawa, Haruto Suzuki, Hibiki Takeda, Masanori Miura, Bashir Ahmmad, Fumihiko Hirose
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 022213 (2024)
https://doi.org/10.1116/6.0003217
Published: March 2024
View articletitled, Sodium adsorption on nanometer-thick TiO2 channel thin-film transistors for enhanced drain currents
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Journal Articles

Low-temperature electrical properties and barrier inhomogeneities in ITO/β-Ga2O3 Schottky diode

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Sanjoy Paul, Roberto Lopez, Adam T. Neal, Shin Mou, Jian V. Li
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 024004 (2024)
https://doi.org/10.1116/6.0003401
Published: March 2024
View articletitled, Low-temperature electrical properties and barrier inhomogeneities in ITO/β-Ga2O3 Schottky diode
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Journal Articles

In situ plasma pin-up clean process for backside bevel polymer removal, defect reduction, and queue time relaxation

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Benjamin B. Ye, Ganquan Song, Jeff J. Ye
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 022202 (2024)
https://doi.org/10.1116/6.0003300
Published: February 2024
View articletitled, In situ plasma pin-up clean process for backside bevel polymer removal, defect reduction, and queue time relaxation
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Journal Articles

Room-temperature nanostructured PbSe/CdSe mid-infrared photodetector: Annealing effects

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Milad Rastkar Mirzaei, Zhisheng Shi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 012204 (2024)
https://doi.org/10.1116/6.0003193
Published: January 2024
View articletitled, Room-temperature nanostructured PbSe/CdSe mid-infrared photodetector: Annealing effects
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Journal Articles

4H-SiC layer with multiple trenches in lateral double-diffused metal-oxide-semiconductor transistors for high temperature and high voltage applications

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Amir Sohrabi-Movahed, Ali Asghar Orouji
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 063201 (2023)
https://doi.org/10.1116/6.0002971
Published: November 2023
View articletitled, 4H-SiC layer with multiple trenches in lateral double-diffused metal-oxide-semiconductor transistors for high temperature and high voltage applications
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Journal Articles

Theoretical approach to thermal sensitivity capability of metal-semiconductor diodes with different Schottky contact area

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Abdulmecit Turut
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 062202 (2023)
https://doi.org/10.1116/6.0002976
Published: September 2023
View articletitled, Theoretical approach to thermal sensitivity capability of metal-semiconductor diodes with different Schottky contact area
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Journal Articles

Top electrode dependence of the write-once-read-many-times resistance switching in BiFeO3 films

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Yajun Fu, Wei Tang, Jin Wang, Linhong Cao
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 052207 (2023)
https://doi.org/10.1116/6.0002946
Published: September 2023
View articletitled, Top electrode dependence of the write-once-read-many-times resistance switching in BiFeO3 films
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