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Journal Articles

Enhancement of performance and reliability in MOSFETs via high-pressure microwave annealing

Geonhyeong Kang, Hunbeom Shin, Seungyeob Kim, Lingwei Zhang, Giuk Kim, Sujeong Lee, Yunseok Nam, Chaeheon Kim, Hoon Kim, Jinho Ahn, Sanghun Jeon
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 43, 012206 (2025)
https://doi.org/10.1116/6.0004086
Published: January 2025
View articletitled, Enhancement of performance and reliability in MOSFETs via high-pressure microwave annealing
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Journal Articles

Thermally stable radio frequency power and noise behaviors of AlGaN/GaN high electron mobility transistor without voltage-blocking buffer layer design

Chong-Rong Huang, Hsien-Chin Chiu, Hsuan-Ling Kao, Hsiang-Chun Wang, Shinn-Yn Lin, Chih-Tien Chen, Kuo-Jen Chang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 043201 (2024)
https://doi.org/10.1116/6.0003551
Published: May 2024
View articletitled, Thermally stable radio frequency power and noise behaviors of AlGaN/GaN high electron mobility transistor without voltage-blocking buffer layer design
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Journal Articles

Influence of Al2O3 atomic-layer deposition temperature on positive-bias instability of metal/Al2O3/β-Ga2O3 capacitors

Editor’s Pick
Atsushi Hiraiwa, Kiyotaka Horikawa, Hiroshi Kawarada, Motohisa Kado, Katsunori Danno
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 012207 (2024)
https://doi.org/10.1116/6.0003186
Published: January 2024
View articletitled, Influence of Al2O3 atomic-layer deposition temperature on positive-bias instability of metal/Al2O3/β-Ga2O3 capacitors
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Journal Articles

E-mode AlGaN/GaN HEMTs using p-NiO gates

Chao-Ching Chiang, Hsiao-Hsuan Wan, Jian-Sian Li, Fan Ren, Timothy Jinsoo Yoo, Honggyu Kim, S. J. Pearton
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 062205 (2023)
https://doi.org/10.1116/6.0003119
Published: November 2023
View articletitled, E-mode AlGaN/GaN HEMTs using p-NiO gates
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Journal Articles

Defect characterization in floating body transistors using a single pulse charge pumping method

Manh-Cuong Nguyen, An Hoang-Thuy Nguyen, Jiyong Yim, Anh-Duy Nguyen, Mingyu Kim, Jeonghan Kim, Jongyeon Baek, Rino Choi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 39, 053205 (2021)
https://doi.org/10.1116/6.0001172
Published: September 2021
View articletitled, Defect characterization in floating body transistors using a single pulse charge pumping method
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Journal Articles

Dark and photo-induced charge transport across molecular spacers

Nirit Kantor-Uriel, Partha Roy, Keti Lerman, Chaim N. Sukenik, Hagai Cohen
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 04H104 (2018)
https://doi.org/10.1116/1.5037219
Published: July 2018
View articletitled, Dark and photo-induced charge transport across molecular spacers
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Includes: Supplementary data
Journal Articles

Dry etch damage in n-type crystalline silicon wafers assessed by deep-level transient spectroscopy and minority carrier lifetime

Eddy Simoen, Hariharsudan Sivaramakrishnan Radhakrishnan, Md. Gius Uddin, Ivan Gordon, Jef Poortmans, Chong Wang, Wei Li
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 041201 (2018)
https://doi.org/10.1116/1.5026529
Published: June 2018
View articletitled, Dry etch damage in n-type crystalline silicon wafers assessed by deep-level transient spectroscopy and minority carrier lifetime
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Journal Articles

Effect of Al2O3 passivation layer on the stability of aluminum-indium-zinc oxide thin film transistors

Ji-In Park, Yooseong Lim, Minhyung Jang, Namgyung Hwang, Moonsuk Yi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 04E103 (2017)
https://doi.org/10.1116/1.4994803
Published: July 2017
View articletitled, Effect of Al2O3 passivation layer on the stability of aluminum-indium-zinc oxide thin film transistors
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Journal Articles

Miniaturized magnet-less RF electron trap. II. Experimental verification

Shiyang Deng, Scott R. Green, Aram H. Markosyan, Mark J. Kushner, Yogesh B. Gianchandani
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 042002 (2017)
https://doi.org/10.1116/1.4984752
Published: June 2017
View articletitled, Miniaturized magnet-less RF electron trap. II. Experimental verification
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Journal Articles

Miniaturized magnet-less RF electron trap. I. Modeling and analysis

Aram H. Markosyan, Scott R. Green, Shiyang Deng, Yogesh B. Gianchandani, Mark J. Kushner
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 042001 (2017)
https://doi.org/10.1116/1.4984751
Published: June 2017
View articletitled, Miniaturized magnet-less RF electron trap. I. Modeling and analysis
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Journal Articles

1.5 MeV electron irradiation damage in β-Ga2O3 vertical rectifiers

Jiancheng Yang, Fan Ren, Stephen J. Pearton, Gwangseok Yang, Jihyun Kim, Akito Kuramata
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 031208 (2017)
https://doi.org/10.1116/1.4983377
Published: May 2017
View articletitled, 1.5 MeV electron irradiation damage in β-Ga2O3 vertical rectifiers
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Journal Articles

Investigation on deep level defects in polycrystalline ZnO thin films

Christos Tsiarapas, Dimitra Girginoudi, Evangelos Ioannou Dimitriadis, Nikolaos Georgoulas
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 031203 (2017)
https://doi.org/10.1116/1.4979691
Published: April 2017
View articletitled, Investigation on deep level defects in polycrystalline ZnO thin films
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Journal Articles

Current conduction mechanisms through thin tunnel oxide during erase operation of flash electrically erasable programmable read-only memory devices

Piyas Samanta
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 032202 (2017)
https://doi.org/10.1116/1.4981134
Published: April 2017
View articletitled, Current conduction mechanisms through thin tunnel oxide during erase operation of flash electrically erasable programmable read-only memory devices
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Journal Articles

Mapping of CMOS FET degradation in bias space—Application to dram peripheral devices

B. Kaczer, J. Franco, S. Tyaginov, M. Jech, G. Rzepa, T. Grasser, B. J. O'Sullivan, R. Ritzenhaler, T. Schram, A. Spessot, D. Linten, N. Horiguchi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 01A109 (2017)
https://doi.org/10.1116/1.4972872
Published: December 2016
View articletitled, Mapping of CMOS FET degradation in bias space—Application to dram peripheral devices
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Journal Articles

Effects of interface states and near interface traps on the threshold voltage stability of GaN and SiC transistors employing SiO2 as gate dielectric

Patrick Fiorenza, Giuseppe Greco, Filippo Giannazzo, Ferdinando Iucolano, Fabrizio Roccaforte
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 01A101 (2017)
https://doi.org/10.1116/1.4967306
Published: November 2016
View articletitled, Effects of interface states and near interface traps on the threshold voltage stability of GaN and SiC transistors employing SiO2 as gate dielectric
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Journal Articles

Investigation of kink effect in normally-off AlGaN/GaN recessed-gate MOS-heterostructure FETs

Youngjin Kang, Hyuk-kee Sung, Hyungtak Kim
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 052202 (2016)
https://doi.org/10.1116/1.4959842
Published: July 2016
View articletitled, Investigation of kink effect in normally-off AlGaN/GaN recessed-gate MOS-heterostructure FETs
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Journal Articles

Deep traps and instabilities in AlGaN/GaN high electron mobility transistors on Si substrates

Alexander Y. Polyakov, N. B. Smirnov, A. V. Turutin, I. S. Shemerov, Fan Ren, S. J. Pearton, J. Wayne Johnson
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 041216 (2016)
https://doi.org/10.1116/1.4953347
Published: June 2016
View articletitled, Deep traps and instabilities in AlGaN/GaN high electron mobility transistors on Si substrates
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Journal Articles

Temperature-dependent electrical instability of p-type SnO thin-film transistors

Jeong-Hwan Lee, Yong-Jin Choi, Chan-Yong Jeong, Chang-Woo Lee, Hyuck-In Kwon
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 041210 (2016)
https://doi.org/10.1116/1.4949558
Published: May 2016
View articletitled, Temperature-dependent electrical instability of p-type SnO thin-film transistors
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Journal Articles

Device characteristics comparisons for the InGaZnO thin film transistors fabricated on two-type surfaces of the plastic poly(ethylene naphthalate) substrates with hybrid barrier layers

Min-Ji Park, Da-Jeong Yun, Min-Ki Ryu, Jong-Heon Yang, Jae-Eun Pi, Oh-Sang Kwon, Gi Heon Kim, Chi-Sun Hwang, Sung-Min Yoon
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 051209 (2015)
https://doi.org/10.1116/1.4929414
Published: August 2015
View articletitled, Device characteristics comparisons for the InGaZnO thin film transistors fabricated on two-type surfaces of the plastic poly(ethylene naphthalate) substrates with hybrid barrier layers
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Journal Articles

Properties of bottom and top channel interfaces in double-gate back-channel-etched amorphous indium-gallium-zinc oxide thin-film transistors

Chan-Yong Jeong, Daeun Lee, Sang-Hun Song, Jong In Kim, Jong-Ho Lee, Jae-Gwang Um, Jin Jang, Hyuck-In Kwon
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 030603 (2015)
https://doi.org/10.1116/1.4919234
Published: April 2015
View articletitled, Properties of bottom and top channel interfaces in double-gate back-channel-etched amorphous indium-gallium-zinc oxide thin-film transistors
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