Page 1 | Search Results | Journal of Vacuum Science & Technology B

1-20 of 386

Sort by

Sort Order Select

Journal Articles

Low power silicon evaporation source—Construction, performances, and applications

S. Kovalchuk, M. Nowicki, I. Morawski

J. Vac. Sci. Technol. B 42, 024003 (2024)

https://doi.org/10.1116/6.0003284

Published: March 2024

View article titled, Low power silicon evaporation source—Construction, performances, and applications

Journal Articles

Characterization of pulsed laser deposited La₂O₂S:Eu³⁺ thin films and effect of coating with graphene oxide layers

Boitumelo C. Tladi, Hendrik C. Swart, Robin E. Kroon

J. Vac. Sci. Technol. B 41, 022204 (2023)

https://doi.org/10.1116/6.0002266

Published: February 2023

View article titled, Characterization of pulsed laser deposited La2O2S:Eu3+ thin films and effect of coating with graphene oxide layers

Journal Articles

Diffusion of zirconium on the surface of Schottky electron sources

Soichiro Matsunaga, Aki Takei, Souichi Katagiri, Yusuke Sakai, Takashi Doi

J. Vac. Sci. Technol. B 39, 062806 (2021)

https://doi.org/10.1116/6.0001381

Published: November 2021

View article titled, Diffusion of zirconium on the surface of Schottky electron sources

Journal Articles

Blue and near infrared luminescence degradation by electron beam irradiation in Y₂O₃:Tm³⁺ nanophosphors

Shivaramu Nagarasanakote Jayaramu, Elizabeth Coetsee, Hendrik C. Swart

J. Vac. Sci. Technol. B 39, 022805 (2021)

https://doi.org/10.1116/6.0000919

Published: March 2021

View article titled, Blue and near infrared luminescence degradation by electron beam irradiation in Y2O3:Tm3+ nanophosphors

Includes: Supplementary data

Journal Articles

Implementation of the inductively coupled plasma etching processes for forming gallium nitride nanorods used in ultraviolet light-emitting diode technology

Marek Ekielski, Marek Wzorek, Krystyna Gołaszewska, Alina Domanowska, Andrzej Taube, Mariusz Sochacki

J. Vac. Sci. Technol. B 38, 042802 (2020)

https://doi.org/10.1116/6.0000133

Published: June 2020

View article titled, Implementation of the inductively coupled plasma etching processes for forming gallium nitride nanorods used in ultraviolet light-emitting diode technology

Journal Articles

Correlation of Auger electron spectroscopy and microsynchrotron radiation x-ray photoelectron spectroscopy investigations of Ba-Sc-O desorption on W(100)

Michael V. Mroz, Martin E. Kordesch, Jerzy T. Sadowski, Samuel A. Tenney, Calley N. Eads

J. Vac. Sci. Technol. B 38, 024003 (2020)

https://doi.org/10.1116/1.5134649

Published: February 2020

View article titled, Correlation of Auger electron spectroscopy and microsynchrotron radiation x-ray photoelectron spectroscopy investigations of Ba-Sc-O desorption on W(100)

Journal Articles

Effect of thermal annealing for W/β-Ga₂O₃ Schottky diodes up to 600 °C

Minghan Xian, Chaker Fares, Fan Ren, Brent P. Gila, Yen-Ting Chen, Yu-Te Liao, Marko Tadjer, Stephen J. Pearton

J. Vac. Sci. Technol. B 37, 061201 (2019)

https://doi.org/10.1116/1.5125006

Published: September 2019

View article titled, Effect of thermal annealing for W/β-Ga2O3 Schottky diodes up to 600 °C

Journal Articles

Luminescence properties and cathodoluminescence degradation of Bi doped SrO powder

Mogahid H. M. Abdelrehman, Robin E. Kroon, Abdelrhman Yousif, Hassan A. A. Seed Ahmed, Hendrik C. Swart

J. Vac. Sci. Technol. B 37, 011206 (2019)

https://doi.org/10.1116/1.5075492

Published: January 2019

View article titled, Luminescence properties and cathodoluminescence degradation of Bi doped SrO powder

Journal Articles

Characterization of thin carbon films capable of low-field electron emission

Alexander Andronov, Ekaterina Budylina, Pavel Shkitun, Pavel Gabdullin, Nikolay Gnuchev, Olga Kvashenkina, Alexander Arkhipov

J. Vac. Sci. Technol. B 36, 02C108 (2018)

https://doi.org/10.1116/1.5009906

Published: January 2018

View article titled, Characterization of thin carbon films capable of low-field electron emission

Journal Articles

Auger electron spectroscopy study of semiconductor surfaces: Effect of cleaning in inert atmosphere

Jolien Debehets, Sérgio M. C. Miranda, Pía Homm, Michel Houssa, Marc Seefeldt, Jean-Pierre Locquet, Jin Won Seo

J. Vac. Sci. Technol. B 34, 041227 (2016)

https://doi.org/10.1116/1.4955149

Published: July 2016

View article titled, Auger electron spectroscopy study of semiconductor surfaces: Effect of cleaning in inert atmosphere

Journal Articles

Composition analysis of III–V materials grown in nanostructures: The self-focusing-SIMS approach

Alexis Franquet, Bastien Douhard, Thierry Conard, Davit Melkonyan, Wilfried Vandervorst

J. Vac. Sci. Technol. B 34, 03H127 (2016)

https://doi.org/10.1116/1.4943950

Published: March 2016

View article titled, Composition analysis of III–V materials grown in nanostructures: The self-focusing-SIMS approach

Journal Articles

Flux dependent Sb-incorporation during molecular beam epitaxy of InAsSb

Wendy L. Sarney, Stefan P. Svensson

J. Vac. Sci. Technol. B 33, 060604 (2015)

https://doi.org/10.1116/1.4935892

Published: November 2015

View article titled, Flux dependent Sb-incorporation during molecular beam epitaxy of InAsSb

Journal Articles

Facile technique for the removal of metal contamination from graphene

George H. Wells, Michael R. C. Hunt, Toby Hopf, Konstantin V. Vassilevski, Enrique Escobedo-Cousin, Alton B. Horsfall, Jonathan P. Goss, Anthony O'Neill

J. Vac. Sci. Technol. B 33, 051802 (2015)

https://doi.org/10.1116/1.4928422

Published: August 2015

View article titled, Facile technique for the removal of metal contamination from graphene

Journal Articles

Lanthanum quantification for optimization of advanced high-k/metal gate stacks using low energy electron x-ray emission spectrometry

Eugénie Martinez, François Bertin, C. Trouiller, P. Caubet, M. P. Moret, A.-S. Robbes, K.-A. Bui-T Meura, O. Dulac, N. Morel

J. Vac. Sci. Technol. B 33, 032206 (2015)

https://doi.org/10.1116/1.4921014

Published: May 2015

View article titled, Lanthanum quantification for optimization of advanced high-k/metal gate stacks using low energy electron x-ray emission spectrometry

Journal Articles

Degradation mechanisms of Ti/Al/Ni/Au-based Ohmic contacts on AlGaN/GaN HEMTs

Ya-Hsi Hwang, Shihyun Ahn, Chen Dong, Weidi Zhu, Byung-Jae Kim, Lingcong Le, Fan Ren, Aaron G. Lind, James Dahl, Kevin S. Jones, Stephen J. Pearton, Ivan I. Kravchenko, Ming-Lan Zhang

J. Vac. Sci. Technol. B 33, 031212 (2015)

https://doi.org/10.1116/1.4919237

Published: April 2015

View article titled, Degradation mechanisms of Ti/Al/Ni/Au-based Ohmic contacts on AlGaN/GaN HEMTs

Journal Articles

III-As heterostructure field-effect transistors with recessed ex-situ gate oxide by O₂ plasma-oxidized GaAs cap

Filip Gucmann, Róbert Kúdela, Peter Kordoš, Edmund Dobročka, Štefan Gaži, Ján Dérer, Jozef Liday, Peter Vogrinčič, Dagmar Gregušová

J. Vac. Sci. Technol. B 33, 01A111 (2015)

https://doi.org/10.1116/1.4905938

Published: January 2015

View article titled, III-As heterostructure field-effect transistors with recessed ex-situ gate oxide by O2 plasma-oxidized GaAs cap

Journal Articles

Growth of strained InGaSb quantum wells for p-FET on Si: Defects, interfaces, and electrical properties

Shailesh Madisetti, Vadim Tokranov, Andrew Greene, Michael Yakimov, Makoto Hirayama, Serge Oktyabrsky, Steven Bentley, Ajey P. Jacob

J. Vac. Sci. Technol. B 32, 051206 (2014)

https://doi.org/10.1116/1.4892797

Published: August 2014

View article titled, Growth of strained InGaSb quantum wells for p-FET on Si: Defects, interfaces, and electrical properties

Journal Articles

In situ Auger probe enabling epitaxy composition control of alloys by elemental surface analysis

W. Laws Calley, Jordan D. Greenlee, Walter E. Henderson, Jonathan Lowder, Michael W. Moseley, W. Alan Doolittle, Philippe G. Staib

J. Vac. Sci. Technol. B 31, 03C126 (2013)

https://doi.org/10.1116/1.4798653

Published: April 2013

View article titled, In situ Auger probe enabling epitaxy composition control of alloys by elemental surface analysis

Journal Articles

Optical and structural characterization of epitaxial graphene on vicinal 6H-SiC(0001)–Si by spectroscopic ellipsometry, Auger spectroscopy, and STM

Florence Nelson, Andreas Sandin, Daniel B. Dougherty, David E. Aspnes, Jack E. Rowe, Alain C. Diebold

J. Vac. Sci. Technol. B 30, 04E106 (2012)

https://doi.org/10.1116/1.4726199

Published: June 2012

View article titled, Optical and structural characterization of epitaxial graphene on vicinal 6H-SiC(0001)–Si by spectroscopic ellipsometry, Auger spectroscopy, and STM

Journal Articles

Surface functionalization of graphenelike materials by carbon monoxide atmospheric plasma treatment for improved wetting without structural degradation

Rafael J. Zaldivar, Paul M. Adams, Jim Nokes, Hyun I. Kim

J. Vac. Sci. Technol. B 30, 03D107 (2012)

https://doi.org/10.1116/1.3695337

Published: March 2012

View article titled, Surface functionalization of graphenelike materials by carbon monoxide atmospheric plasma treatment for improved wetting without structural degradation

NARROW

Topics

Low power silicon evaporation source—Construction, performances, and applications

Characterization of pulsed laser deposited La₂O₂S:Eu³⁺ thin films and effect of coating with graphene oxide layers

Diffusion of zirconium on the surface of Schottky electron sources

Blue and near infrared luminescence degradation by electron beam irradiation in Y₂O₃:Tm³⁺ nanophosphors

Implementation of the inductively coupled plasma etching processes for forming gallium nitride nanorods used in ultraviolet light-emitting diode technology

Correlation of Auger electron spectroscopy and microsynchrotron radiation x-ray photoelectron spectroscopy investigations of Ba-Sc-O desorption on W(100)

Effect of thermal annealing for W/β-Ga₂O₃ Schottky diodes up to 600 °C

Luminescence properties and cathodoluminescence degradation of Bi doped SrO powder

Characterization of thin carbon films capable of low-field electron emission

Auger electron spectroscopy study of semiconductor surfaces: Effect of cleaning in inert atmosphere

Composition analysis of III–V materials grown in nanostructures: The self-focusing-SIMS approach

Flux dependent Sb-incorporation during molecular beam epitaxy of InAsSb

Facile technique for the removal of metal contamination from graphene

Lanthanum quantification for optimization of advanced high-k/metal gate stacks using low energy electron x-ray emission spectrometry

Degradation mechanisms of Ti/Al/Ni/Au-based Ohmic contacts on AlGaN/GaN HEMTs

III-As heterostructure field-effect transistors with recessed ex-situ gate oxide by O₂ plasma-oxidized GaAs cap

Growth of strained InGaSb quantum wells for p-FET on Si: Defects, interfaces, and electrical properties

In situ Auger probe enabling epitaxy composition control of alloys by elemental surface analysis

Optical and structural characterization of epitaxial graphene on vicinal 6H-SiC(0001)–Si by spectroscopic ellipsometry, Auger spectroscopy, and STM

Surface functionalization of graphenelike materials by carbon monoxide atmospheric plasma treatment for improved wetting without structural degradation

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only