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Journal Articles

Threshold switching stabilization of NbO2 films via nanoscale devices

Editor’s Pick
M. C. Sullivan, Zachary R. Robinson, Karsten Beckmann, Alex Powell, Ted Mburu, Katherine Pittman, Nathaniel Cady
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 063202 (2022)
https://doi.org/10.1116/6.0002129
Published: November 2022
View article titled, Threshold switching stabilization of NbO<sub>2</sub> films via nanoscale devices
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Journal Articles

Negative differential resistance in photoassisted field emission from Si nanowires

M. Choueib, A. Derouet, P. Vincent, A. Ayari, S. Perisanu, P. Poncharal, C. S. Cojocaru, R. Martel, S. T. Purcell
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 022802 (2022)
https://doi.org/10.1116/6.0001650
Published: February 2022
View article titled, Negative differential resistance in photoassisted field emission from Si nanowires
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Includes: Supplementary data
Journal Articles

Electroforming and threshold switching characteristics of NbOx films with crystalline NbO2 phase

Jimin Lee, Jaeyeon Kim, Juyoung Jeong, Hyunchul Sohn
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 39, 053206 (2021)
https://doi.org/10.1116/6.0001215
Published: September 2021
View article titled, Electroforming and threshold switching characteristics of NbO<sub>x</sub> films with crystalline NbO<sub>2</sub> phase
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Journal Articles

Dependence of growth temperature on the electrical properties and microstructure of MBE-grown AlN/GaN resonant tunneling diodes on sapphire

David F. Storm, Tyler A. Growden, Evan M. Cornuelle, Prudhvi R. Peri, Thomas Osadchy, Jeffrey W. Daulton, Wei-Dong Zhang, D. Scott Katzer, Matthew T. Hardy, Neeraj Nepal, Richard Molnar, Elliott R. Brown, Paul R. Berger, David J. Smith, David J. Meyer
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 38, 032214 (2020)
https://doi.org/10.1116/6.0000052
Published: May 2020
View article titled, Dependence of growth temperature on the electrical properties and microstructure of MBE-grown AlN/GaN resonant tunneling diodes on sapphire
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Journal Articles

Observation of negative differential resistance in GaN-based multiple-quantum-well light-emitting diodes

J. Yang, D. G. Zhao, D. S. Jiang, P. Chen, J. J. Zhu, Z. S. Liu, L. C. Le, X. J. Li, X. G. He, J. P. Liu, L. Q. Zhang, H. Yang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 011206 (2016)
https://doi.org/10.1116/1.4937265
Published: December 2015
View article titled, Observation of negative differential resistance in GaN-based multiple-quantum-well light-emitting diodes
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Journal Articles

Characteristics of electron emission of Al-Al2O3-Ti/Au diode with a new double-layer insulator

Yihua Hu, Xiaoning Zhang, Tao Xue, Chunliang Liu
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 062204 (2014)
https://doi.org/10.1116/1.4900632
Published: November 2014
View article titled, Characteristics of electron emission of Al-Al<sub>2</sub>O<sub>3</sub>-Ti/Au diode with a new double-layer insulator
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Journal Articles

Single nanowire AlN/GaN double barrier resonant tunneling diodes with bipolar tunneling at room and cryogenic temperatures

Ye Shao, Santino D. Carnevale, A. T. M. G. Sarwar, Roberto C. Myers, Wu Lu
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 31, 06FA03 (2013)
https://doi.org/10.1116/1.4829432
Published: November 2013
View article titled, Single nanowire AlN/GaN double barrier resonant tunneling diodes with bipolar tunneling at room and cryogenic temperatures
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Journal Articles

Electrical characterization of high- k based metal-insulator-semiconductor structures with negative resistance effect when using Al 2 O 3 and nanolaminated films deposited on p -Si

A. Gómez, H. Castán, H. García, S. Dueñas, L. Bailón, F. Campabadal, J. M. Rafí, M. Zabala
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 01A901 (2011)
https://doi.org/10.1116/1.3521383
Published: January 2011
View article titled, Electrical characterization of high- k based metal-insulator-semiconductor structures with negative resistance effect when using Al 2 O 3 and nanolaminated films deposited on p -Si
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Journal Articles

Temperature hysteresis of the capacitance dependence C ( T ) for ferroelectric ceramics

Antonina Dedyk, Yulia Pavlova, Sergey Karmanenko, Alexander Semenov, Dmitry Semikin, Oleg Pakhomov, Alexander Starkov, Ivan Starkov
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 01A501 (2011)
https://doi.org/10.1116/1.3532944
Published: January 2011
View article titled, Temperature hysteresis of the capacitance dependence C ( T ) for ferroelectric ceramics
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Journal Articles

Tunneling through MnAs particles at a GaAs p + n + junction

F. L. Bloom, A. C. Young, R. C. Myers, E. R. Brown, A. C. Gossard, E. G. Gwinn
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 24, 1639–1643 (2006)
https://doi.org/10.1116/1.2190680
Published: May 2006
View article titled, Tunneling through MnAs particles at a GaAs p + n + junction
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Journal Articles

Nanowell device for the electrical characterization of metal–molecule–metal junctions

Nabanita Majumdar, Nadine Gergel, David Routenberg, J. C. Bean, L. R. Harriott, B. Li, L. Pu, Y. Yao, J. M. Tour
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 23, 1417–1421 (2005)
https://doi.org/10.1116/1.1935528
Published: July 2005
View article titled, Nanowell device for the electrical characterization of metal–molecule–metal junctions
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Journal Articles

Characterization of an advanced high-efficiency electron emission device

Nobuyasu Negishi, Tomonari Nakada, Kazuto Sakemura, Yoshiyuki Okuda, Hideo Satoh, Atsushi Watanabe, Takamasa Yoshikawa, Kiyohide Ogasawara, Nobuyoshi Koshida
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 23, 682–686 (2005)
https://doi.org/10.1116/1.1884119
Published: April 2005
View article titled, Characterization of an advanced high-efficiency electron emission device
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Journal Articles

Photoconductive characteristics in a trench-type InGaAs quantum-wire field effect transistor

Kee-Youn Jang, Takeyoshi Sugaya, Cheol-Koo Hahn, Mutsuo Ogura, Kazuhiro Komori, Akito Shinoda, Kenji Yonei
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 22, 1523–1525 (2004)
https://doi.org/10.1116/1.1752911
Published: June 2004
View article titled, Photoconductive characteristics in a trench-type InGaAs quantum-wire field effect transistor
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Journal Articles

Enhancement-mode In 0.52 Al 0.48 As/In 0.6 Ga 0.4 As tunneling real space transfer high electron mobility transistor

Yen-Wei Chen, Yeong-Jia Chen, Wei-Chou Hsu, Rong-Tay Hsu, Yue-Huei Wu, Yu-Shyan Lin
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 22, 974–976 (2004)
https://doi.org/10.1116/1.1715090
Published: April 2004
View article titled, Enhancement-mode In 0.52 Al 0.48 As/In 0.6 Ga 0.4 As tunneling real space transfer high electron mobility transistor
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Journal Articles

Lateral field emitter arrays with high emission currents and wide operation region by high field activation

Jae-Hoon Lee, Myoung-Bok Lee, Sung-Ho Hahm, Jung-Hee Lee, Hwa-Il Seo, Dae-Hyuk Kwon, Jin-Sup Kim, Kyu-Man Choi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 21, 506–510 (2003)
https://doi.org/10.1116/1.1527638
Published: February 2003
View article titled, Lateral field emitter arrays with high emission currents and wide operation region by high field activation
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Journal Articles

Scanning tunneling spectroscopy of field-induced Au nanodots on ultrathin oxides on Si(100)

Jeong Young Park, R. J. Phaneuf, E. D. Williams
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 19, 523–526 (2001)
https://doi.org/10.1116/1.1358883
Published: March 2001
View article titled, Scanning tunneling spectroscopy of field-induced Au nanodots on ultrathin oxides on Si(100)
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Journal Articles

Negative differential resistance of a ridge-type InGaAs quantum wire field-effect transistor

Takeyoshi Sugaya, Seong-Jin Kim, Tadashi Nakagawa, Yoshinobu Sugiyama, Mutsuo Ogura
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 18, 1680–1683 (2000)
https://doi.org/10.1116/1.591451
Published: May 2000
View article titled, Negative differential resistance of a ridge-type InGaAs quantum wire field-effect transistor
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Journal Articles

Superlatticed negative differential-resistance heterojunction bipolar transistor

Shiou-Ying Cheng, Jung-Hui Tsai, Po-Hung Lin, Wen-Chau Liu
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 17, 1477–1481 (1999)
https://doi.org/10.1116/1.590777
Published: July 1999
View article titled, Superlatticed negative differential-resistance heterojunction bipolar transistor
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Journal Articles

Electron field emission from a silicon subsurface based on a generalized Airy function approach

Khairurrijal, Seiichi Miyazaki, Masataka Hirose
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 17, 306–310 (1999)
https://doi.org/10.1116/1.590555
Published: March 1999
View article titled, Electron field emission from a silicon subsurface based on a generalized Airy function approach
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Journal Articles

Double electron layer tunneling transistors by dual-side electron beam lithography

J. R. Wendt, J. A. Simmons, J. S. Moon, M. A. Blount, W. E. Baca, J. L. Reno
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 16, 3808–3811 (1998)
https://doi.org/10.1116/1.590413
Published: November 1998
View article titled, Double electron layer tunneling transistors by dual-side electron beam lithography
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