Page 1 | Search Results | Journal of Vacuum Science & Technology B

1-20 of 261

Sort by

Sort Order Select

Journal Articles

Engineering of ZrO₂-based RRAM devices for low power in-memory computing

Aseel Zeinati, Durga Misra, Dina H. Triyoso, Kandabara Tapily, Robert D. Clark, Sarah Lombardo, Cory S. Wajda, Gert J. Leusink

J. Vac. Sci. Technol. B 42, 063207 (2024)

https://doi.org/10.1116/6.0004007

Published: November 2024

View article titled, Engineering of ZrO2-based RRAM devices for low power in-memory computing

Journal Articles

Dynamic switching operation of diamond MOSFETs with NO₂ p-type doping and Al₂O₃ gate insulation and passivation

Niloy Chandra Saha, Tomoki Shiratsuchi, Masanori Eguchi, Toshiyuki Oishi, Makoto Kasu

J. Vac. Sci. Technol. B 42, 052207 (2024)

https://doi.org/10.1116/5.0218780

Published: August 2024

View article titled, Dynamic switching operation of diamond MOSFETs with NO2 p-type doping and Al2O3 gate insulation and passivation

Journal Articles

Role of the oxidation conditions on the orientation of TiN_xO_y grown by atomic layer deposition: Impact on the optical and electrical properties

Kou Ihara, Julien Cardin, Maxime Leménager, Xavier Portier, Hind Bousbia, Christophe Labbé

J. Vac. Sci. Technol. B 42, 054001 (2024)

https://doi.org/10.1116/6.0003646

Published: August 2024

View article titled, Role of the oxidation conditions on the orientation of TiNxOy grown by atomic layer deposition: Impact on the optical and electrical properties

Journal Articles

Performance enhancement in spin transfer torque magnetic random access memory through in situ cap layer optimization

Zhenghui Ji, Yongzhao Peng, Guoxiu Qiu, Guchang Han, Qijun Guo

J. Vac. Sci. Technol. B 42, 043801 (2024)

https://doi.org/10.1116/6.0003661

Published: June 2024

View article titled, Performance enhancement in spin transfer torque magnetic random access memory through in situ cap layer optimization

Journal Articles

Sodium adsorption on nanometer-thick TiO₂ channel thin-film transistors for enhanced drain currents

Ryo Miyazawa, Haruto Suzuki, Hibiki Takeda, Masanori Miura, Bashir Ahmmad, Fumihiko Hirose

J. Vac. Sci. Technol. B 42, 022213 (2024)

https://doi.org/10.1116/6.0003217

Published: March 2024

View article titled, Sodium adsorption on nanometer-thick TiO2 channel thin-film transistors for enhanced drain currents

Journal Articles

Performance evaluation of atomic layer deposited TiO₂/TiN nanolaminates used as infrared photodetectors

G. Scarel, O. Kokhan, V. D. Wheeler

J. Vac. Sci. Technol. B 42, 023401 (2024)

https://doi.org/10.1116/6.0003139

Published: February 2024

View article titled, Performance evaluation of atomic layer deposited TiO2/TiN nanolaminates used as infrared photodetectors

Includes: Supplementary data

Journal Articles

Influence of Al₂O₃ atomic-layer deposition temperature on positive-bias instability of metal/Al₂O₃/β-Ga₂O₃ capacitors

Atsushi Hiraiwa, Kiyotaka Horikawa, Hiroshi Kawarada, Motohisa Kado, Katsunori Danno

J. Vac. Sci. Technol. B 42, 012207 (2024)

https://doi.org/10.1116/6.0003186

Published: January 2024

View article titled, Influence of Al2O3 atomic-layer deposition temperature on positive-bias instability of metal/Al2O3/β-Ga2O3 capacitors

Journal Articles

Investigation of polymer template removal techniques in three-dimensional thin-shell nanolattices

Vijay Anirudh Premnath, Chih-Hao Chang

J. Vac. Sci. Technol. B 41, 062805 (2023)

https://doi.org/10.1116/6.0003036

Published: October 2023

View article titled, Investigation of polymer template removal techniques in three-dimensional thin-shell nanolattices

Journal Articles

Investigation of tetrakis(ethylmethylamido)hafnium adsorption mechanism in initial growth of atomic layer deposited-HfO₂ thin films on H-/OH-terminated Si (100) surfaces

Jihye Park, Minji Jeong, Young Joon Cho, Kyung Joong Kim, Truong Ba Tai, Hyeyoung Shin, Jong Chul Lim, Hyo Sik Chang

J. Vac. Sci. Technol. B 41, 062801 (2023)

https://doi.org/10.1116/6.0002920

Published: September 2023

View article titled, Investigation of tetrakis(ethylmethylamido)hafnium adsorption mechanism in initial growth of atomic layer deposited-HfO2 thin films on H-/OH-terminated Si (100) surfaces

Includes: Supplementary data

Journal Articles

Heat-transfer modeling of the gas gap under a wafer

E. Gonzalez-Juez

J. Vac. Sci. Technol. B 41, 044206 (2023)

https://doi.org/10.1116/6.0002851

Published: July 2023

View article titled, Heat-transfer modeling of the gas gap under a wafer

Journal Articles

Characterization of GaN structures for power electronics by secondary ion mass spectrometry and atomic force microscope approach

Tarek Spelta, Marc Veillerot, Eugénie Martinez, Nicolas Chevalier, Denis Mariolle, Roselyne Templier, Bassem Salem, Pedro Fernandes Paes Pinto Rocha, Laura Vauche, Sarah Boubenia, Bérangère Hyot

J. Vac. Sci. Technol. B 41, 034003 (2023)

https://doi.org/10.1116/6.0002573

Published: April 2023

View article titled, Characterization of GaN structures for power electronics by secondary ion mass spectrometry and atomic force microscope approach

Journal Articles

Close-packed silicon field emitter arrays with integrated anode fabricated by electron-beam lithography

S. Ghotbi, S. Mohammadi

J. Vac. Sci. Technol. B 41, 013202 (2023)

https://doi.org/10.1116/6.0002295

Published: December 2022

View article titled, Close-packed silicon field emitter arrays with integrated anode fabricated by electron-beam lithography

Journal Articles

Role of dose optimization in Ru atomic layer deposition for low resistivity films

Victor Wang, Michael Breeden, Nickolas Ashburn, Matthew Bergschneider, Jacob Spiegelman, Harsono Simka, Kyeongjae Cho, Andrew C. Kummel

J. Vac. Sci. Technol. B 41, 012201 (2023)

https://doi.org/10.1116/6.0002153

Published: December 2022

View article titled, Role of dose optimization in Ru atomic layer deposition for low resistivity films

Includes: Supplementary data

Journal Articles

Influence of the Cl₂ etching on the Al₂O₃/GaN metal–oxide–semiconductor interface

T. Meyer, S. Boubenia, C. Petit-Etienne, B. Salem, E. Pargon

J. Vac. Sci. Technol. B 40, 062208 (2022)

https://doi.org/10.1116/6.0002133

Published: November 2022

View article titled, Influence of the Cl2 etching on the Al2O3/GaN metal–oxide–semiconductor interface

Journal Articles

Fabrication of three-dimensional opal nanolattices using template-directed colloidal assembly

Vijay Anirudh Premnath, I.-Te Chen, Kun-Chieh Chien, Chih-Hao Chang

J. Vac. Sci. Technol. B 40, 062803 (2022)

https://doi.org/10.1116/6.0002112

Published: November 2022

View article titled, Fabrication of three-dimensional opal nanolattices using template-directed colloidal assembly

Journal Articles

Erratum: ‘‘Hollow cathode enhanced capacitively coupled plasmas in Ar/N₂/H₂ mixtures and implications for plasma enhanced ALD” [J. Vac. Sci. Technol. B 40, 044002 (2022)]

David R. Boris, Michael J. Johnson, Charles R. Eddy, Jr., Scott G. Walton

J. Vac. Sci. Technol. B 40, 057001 (2022)

https://doi.org/10.1116/6.0002172

Published: September 2022

View article titled, Erratum: ‘‘Hollow cathode enhanced capacitively coupled plasmas in Ar/N2/H2 mixtures and implications for plasma enhanced ALD” [J. Vac. Sci. Technol. B 40, 044002 (2022)]

Journal Articles

Hollow cathode enhanced capacitively coupled plasmas in Ar/N₂/H₂ mixtures and implications for plasma enhanced ALD

David R. Boris, Michael J. Johnson, Charles R. Eddy, Jr., Scott G. Walton

J. Vac. Sci. Technol. B 40, 044002 (2022)

https://doi.org/10.1116/6.0001840

Published: July 2022

View article titled, Hollow cathode enhanced capacitively coupled plasmas in Ar/N2/H2 mixtures and implications for plasma enhanced ALD

Journal Articles

Device feasibility and performance improvement methodologies for thin film transistors using In-Ga-Sn-O channels prepared by atomic-layer deposition

Shin-Ho Noh, Hyo-Eun Kim, Young-Ha Kwon, Nak-Jin Seong, Kyu-Jeong Choi, Sung-Min Yoon

J. Vac. Sci. Technol. B 40, 040602 (2022)

https://doi.org/10.1116/6.0001945

Published: June 2022

View article titled, Device feasibility and performance improvement methodologies for thin film transistors using In-Ga-Sn-O channels prepared by atomic-layer deposition

Journal Articles

Simplified CVD route to near-zero thickness silicon nitride films

Barry Arkles, Chad Brick, Jonathan Goff, Alain E. Kaloyeros

J. Vac. Sci. Technol. B 40, 040601 (2022)

https://doi.org/10.1116/6.0001820

Published: June 2022

View article titled, Simplified CVD route to near-zero thickness silicon nitride films

Journal Articles

In-depth feasibility study of extreme ultraviolet damascene extension: Patterning, dielectric etch, and metallization

Xinghua Sun, Yann Mignot, Christopher Cole, Eric Liu, Daniel Santos, Angelique Raley, Jennifer Church, Luciana Meli, Stuart A. Sieg, Peter Biolsi

J. Vac. Sci. Technol. B 40, 023207 (2022)

https://doi.org/10.1116/6.0001671

Published: February 2022

View article titled, In-depth feasibility study of extreme ultraviolet damascene extension: Patterning, dielectric etch, and metallization

NARROW

Topics

Engineering of ZrO₂-based RRAM devices for low power in-memory computing

Dynamic switching operation of diamond MOSFETs with NO₂ p-type doping and Al₂O₃ gate insulation and passivation

Role of the oxidation conditions on the orientation of TiN_xO_y grown by atomic layer deposition: Impact on the optical and electrical properties

Performance enhancement in spin transfer torque magnetic random access memory through in situ cap layer optimization

Sodium adsorption on nanometer-thick TiO₂ channel thin-film transistors for enhanced drain currents

Performance evaluation of atomic layer deposited TiO₂/TiN nanolaminates used as infrared photodetectors

Influence of Al₂O₃ atomic-layer deposition temperature on positive-bias instability of metal/Al₂O₃/β-Ga₂O₃ capacitors

Investigation of polymer template removal techniques in three-dimensional thin-shell nanolattices

Investigation of tetrakis(ethylmethylamido)hafnium adsorption mechanism in initial growth of atomic layer deposited-HfO₂ thin films on H-/OH-terminated Si (100) surfaces

Heat-transfer modeling of the gas gap under a wafer

Characterization of GaN structures for power electronics by secondary ion mass spectrometry and atomic force microscope approach

Close-packed silicon field emitter arrays with integrated anode fabricated by electron-beam lithography

Role of dose optimization in Ru atomic layer deposition for low resistivity films

Influence of the Cl₂ etching on the Al₂O₃/GaN metal–oxide–semiconductor interface

Fabrication of three-dimensional opal nanolattices using template-directed colloidal assembly

Erratum: ‘‘Hollow cathode enhanced capacitively coupled plasmas in Ar/N₂/H₂ mixtures and implications for plasma enhanced ALD” [J. Vac. Sci. Technol. B 40, 044002 (2022)]

Hollow cathode enhanced capacitively coupled plasmas in Ar/N₂/H₂ mixtures and implications for plasma enhanced ALD

Device feasibility and performance improvement methodologies for thin film transistors using In-Ga-Sn-O channels prepared by atomic-layer deposition

Simplified CVD route to near-zero thickness silicon nitride films

In-depth feasibility study of extreme ultraviolet damascene extension: Patterning, dielectric etch, and metallization

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only