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Journal Articles

Investigation of polymer template removal techniques in three-dimensional thin-shell nanolattices

Vijay Anirudh Premnath, Chih-Hao Chang

J. Vac. Sci. Technol. B 41, 062805 (2023)

https://doi.org/10.1116/6.0003036

Published: October 2023

View article titled, Investigation of polymer template removal techniques in three-dimensional thin-shell nanolattices

Journal Articles

Investigation of tetrakis(ethylmethylamido)hafnium adsorption mechanism in initial growth of atomic layer deposited-HfO₂ thin films on H-/OH-terminated Si (100) surfaces

Jihye Park, Minji Jeong, Young Joon Cho, Kyung Joong Kim, Truong Ba Tai, Hyeyoung Shin, Jong Chul Lim, Hyo Sik Chang

J. Vac. Sci. Technol. B 41, 062801 (2023)

https://doi.org/10.1116/6.0002920

Published: September 2023

View article titled, Investigation of tetrakis(ethylmethylamido)hafnium adsorption mechanism in initial growth of atomic layer deposited-HfO2 thin films on H-/OH-terminated Si (100) surfaces

Includes: Supplementary data

Journal Articles

Heat-transfer modeling of the gas gap under a wafer

E. Gonzalez-Juez

J. Vac. Sci. Technol. B 41, 044206 (2023)

https://doi.org/10.1116/6.0002851

Published: July 2023

View article titled, Heat-transfer modeling of the gas gap under a wafer

Journal Articles

Characterization of GaN structures for power electronics by secondary ion mass spectrometry and atomic force microscope approach

Tarek Spelta, Marc Veillerot, Eugénie Martinez, Nicolas Chevalier, Denis Mariolle, Roselyne Templier, Bassem Salem, Pedro Fernandes Paes Pinto Rocha, Laura Vauche, Sarah Boubenia, Bérangère Hyot

J. Vac. Sci. Technol. B 41, 034003 (2023)

https://doi.org/10.1116/6.0002573

Published: April 2023

View article titled, Characterization of GaN structures for power electronics by secondary ion mass spectrometry and atomic force microscope approach

Journal Articles

Close-packed silicon field emitter arrays with integrated anode fabricated by electron-beam lithography

S. Ghotbi, S. Mohammadi

J. Vac. Sci. Technol. B 41, 013202 (2023)

https://doi.org/10.1116/6.0002295

Published: December 2022

View article titled, Close-packed silicon field emitter arrays with integrated anode fabricated by electron-beam lithography

Journal Articles

Role of dose optimization in Ru atomic layer deposition for low resistivity films

Victor Wang, Michael Breeden, Nickolas Ashburn, Matthew Bergschneider, Jacob Spiegelman, Harsono Simka, Kyeongjae Cho, Andrew C. Kummel

J. Vac. Sci. Technol. B 41, 012201 (2023)

https://doi.org/10.1116/6.0002153

Published: December 2022

View article titled, Role of dose optimization in Ru atomic layer deposition for low resistivity films

Includes: Supplementary data

Journal Articles

Influence of the Cl₂ etching on the Al₂O₃/GaN metal–oxide–semiconductor interface

T. Meyer, S. Boubenia, C. Petit-Etienne, B. Salem, E. Pargon

J. Vac. Sci. Technol. B 40, 062208 (2022)

https://doi.org/10.1116/6.0002133

Published: November 2022

View article titled, Influence of the Cl2 etching on the Al2O3/GaN metal–oxide–semiconductor interface

Journal Articles

Fabrication of three-dimensional opal nanolattices using template-directed colloidal assembly

Vijay Anirudh Premnath, I.-Te Chen, Kun-Chieh Chien, Chih-Hao Chang

J. Vac. Sci. Technol. B 40, 062803 (2022)

https://doi.org/10.1116/6.0002112

Published: November 2022

View article titled, Fabrication of three-dimensional opal nanolattices using template-directed colloidal assembly

Journal Articles

Erratum: ‘‘Hollow cathode enhanced capacitively coupled plasmas in Ar/N₂/H₂ mixtures and implications for plasma enhanced ALD” [J. Vac. Sci. Technol. B 40, 044002 (2022)]

David R. Boris, Michael J. Johnson, Charles R. Eddy, Jr., Scott G. Walton

J. Vac. Sci. Technol. B 40, 057001 (2022)

https://doi.org/10.1116/6.0002172

Published: September 2022

View article titled, Erratum: ‘‘Hollow cathode enhanced capacitively coupled plasmas in Ar/N2/H2 mixtures and implications for plasma enhanced ALD” [J. Vac. Sci. Technol. B 40, 044002 (2022)]

Journal Articles

Hollow cathode enhanced capacitively coupled plasmas in Ar/N₂/H₂ mixtures and implications for plasma enhanced ALD

David R. Boris, Michael J. Johnson, Charles R. Eddy, Jr., Scott G. Walton

J. Vac. Sci. Technol. B 40, 044002 (2022)

https://doi.org/10.1116/6.0001840

Published: July 2022

View article titled, Hollow cathode enhanced capacitively coupled plasmas in Ar/N2/H2 mixtures and implications for plasma enhanced ALD

Journal Articles

Device feasibility and performance improvement methodologies for thin film transistors using In-Ga-Sn-O channels prepared by atomic-layer deposition

Shin-Ho Noh, Hyo-Eun Kim, Young-Ha Kwon, Nak-Jin Seong, Kyu-Jeong Choi, Sung-Min Yoon

J. Vac. Sci. Technol. B 40, 040602 (2022)

https://doi.org/10.1116/6.0001945

Published: June 2022

View article titled, Device feasibility and performance improvement methodologies for thin film transistors using In-Ga-Sn-O channels prepared by atomic-layer deposition

Journal Articles

Simplified CVD route to near-zero thickness silicon nitride films

Barry Arkles, Chad Brick, Jonathan Goff, Alain E. Kaloyeros

J. Vac. Sci. Technol. B 40, 040601 (2022)

https://doi.org/10.1116/6.0001820

Published: June 2022

View article titled, Simplified CVD route to near-zero thickness silicon nitride films

Journal Articles

In-depth feasibility study of extreme ultraviolet damascene extension: Patterning, dielectric etch, and metallization

Xinghua Sun, Yann Mignot, Christopher Cole, Eric Liu, Daniel Santos, Angelique Raley, Jennifer Church, Luciana Meli, Stuart A. Sieg, Peter Biolsi

J. Vac. Sci. Technol. B 40, 023207 (2022)

https://doi.org/10.1116/6.0001671

Published: February 2022

View article titled, In-depth feasibility study of extreme ultraviolet damascene extension: Patterning, dielectric etch, and metallization

Journal Articles

Molecular dynamics study of silicon atomic layer etching by chlorine gas and argon ions

Joseph R. Vella, David Humbird, David B. Graves

J. Vac. Sci. Technol. B 40, 023205 (2022)

https://doi.org/10.1116/6.0001681

Published: February 2022

View article titled, Molecular dynamics study of silicon atomic layer etching by chlorine gas and argon ions

Includes: Supplementary data

Journal Articles

Fabrication of ultrathin suspended membranes from atomic layer deposition films

Michael J. Elowson, Rohan Dhall, Adam Schwartzberg, Stephanie Y. Chang, Vittoria Tommasini, Sardar B. Alam, Emory M. Chan, Stefano Cabrini, Shaul Aloni

J. Vac. Sci. Technol. B 40, 023001 (2022)

https://doi.org/10.1116/6.0001309

Published: February 2022

View article titled, Fabrication of ultrathin suspended membranes from atomic layer deposition films

Includes: Supplementary data

Journal Articles

Rapid preparation of amorphous Al₂O₃ on graphene surface by plasma electrolysis technology

Yongfu Zhang, Yunjie Yang, Xiaolin Wei, Ben Ma, Weiwei Chen, Huanwu Cheng, Lu Wang, Tianyu Hou, Maoyuan Li, Lin Lu

J. Vac. Sci. Technol. B 40, 013601 (2022)

https://doi.org/10.1116/6.0001361

Published: January 2022

View article titled, Rapid preparation of amorphous Al2O3 on graphene surface by plasma electrolysis technology

Journal Articles

Postdeposition annealing effect on atomic-layer-deposited Al₂O₃ gate insulator on (001) β-Ga₂O₃

Atsushi Hiraiwa (平岩篤), Kiyotaka Horikawa (堀川清貴), Hiroshi Kawarada (川原田洋), Motohisa Kado (加渡幹尚), Katsunori Danno (旦野克典)

J. Vac. Sci. Technol. B 39, 062205 (2021)

https://doi.org/10.1116/6.0001360

Published: October 2021

View article titled, Postdeposition annealing effect on atomic-layer-deposited Al2O3 gate insulator on (001) β-Ga2O3

Journal Articles

Selective dry etching of UV-nanoimprinted resin passivation masks for area selective atomic layer deposition of aluminum oxide

Chiaki Miyajima, Shunya Ito, Masaru Nakagawa

J. Vac. Sci. Technol. B 39, 052804 (2021)

https://doi.org/10.1116/6.0001250

Published: September 2021

View article titled, Selective dry etching of UV-nanoimprinted resin passivation masks for area selective atomic layer deposition of aluminum oxide

Journal Articles

Tunable and scalable fabrication of plasmonic dimer arrays with sub-10 nm nanogaps by area-selective atomic layer deposition

Chengwu Zhang, Tuo Gao, Donal Sheets, Jason N. Hancock, Jason Tresback, Brian Willis

J. Vac. Sci. Technol. B 39, 053203 (2021)

https://doi.org/10.1116/6.0001205

Published: August 2021

View article titled, Tunable and scalable fabrication of plasmonic dimer arrays with sub-10 nm nanogaps by area-selective atomic layer deposition

Includes: Supplementary data

Journal Articles

Modeling the initial monolayer formation in thermally localized surface deposition

Bart de Braaf, Cor M. Rops, Cornelis Storm

J. Vac. Sci. Technol. B 39, 052802 (2021)

https://doi.org/10.1116/6.0001098

Published: August 2021

View article titled, Modeling the initial monolayer formation in thermally localized surface deposition

NARROW

Topics

Investigation of polymer template removal techniques in three-dimensional thin-shell nanolattices

Investigation of tetrakis(ethylmethylamido)hafnium adsorption mechanism in initial growth of atomic layer deposited-HfO₂ thin films on H-/OH-terminated Si (100) surfaces

Heat-transfer modeling of the gas gap under a wafer

Characterization of GaN structures for power electronics by secondary ion mass spectrometry and atomic force microscope approach

Close-packed silicon field emitter arrays with integrated anode fabricated by electron-beam lithography

Role of dose optimization in Ru atomic layer deposition for low resistivity films

Influence of the Cl₂ etching on the Al₂O₃/GaN metal–oxide–semiconductor interface

Fabrication of three-dimensional opal nanolattices using template-directed colloidal assembly

Erratum: ‘‘Hollow cathode enhanced capacitively coupled plasmas in Ar/N₂/H₂ mixtures and implications for plasma enhanced ALD” [J. Vac. Sci. Technol. B 40, 044002 (2022)]

Hollow cathode enhanced capacitively coupled plasmas in Ar/N₂/H₂ mixtures and implications for plasma enhanced ALD

Device feasibility and performance improvement methodologies for thin film transistors using In-Ga-Sn-O channels prepared by atomic-layer deposition

Simplified CVD route to near-zero thickness silicon nitride films

In-depth feasibility study of extreme ultraviolet damascene extension: Patterning, dielectric etch, and metallization

Molecular dynamics study of silicon atomic layer etching by chlorine gas and argon ions

Fabrication of ultrathin suspended membranes from atomic layer deposition films

Rapid preparation of amorphous Al₂O₃ on graphene surface by plasma electrolysis technology

Postdeposition annealing effect on atomic-layer-deposited Al₂O₃ gate insulator on (001) β-Ga₂O₃

Selective dry etching of UV-nanoimprinted resin passivation masks for area selective atomic layer deposition of aluminum oxide

Tunable and scalable fabrication of plasmonic dimer arrays with sub-10 nm nanogaps by area-selective atomic layer deposition

Modeling the initial monolayer formation in thermally localized surface deposition

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