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Journal Articles

Low trap density of oxygen-rich HfO₂/GaN interface for GaN MIS-HEMT applications

Wei-Chih Cheng, Jiaqi He, Minghao He, Zepeng Qiao, Yang Jiang, Fangzhou Du, Xiang Wang, Haimin Hong, Qing Wang, Hongyu Yu

J. Vac. Sci. Technol. B 40, 022212 (2022)

https://doi.org/10.1116/6.0001654

Published: March 2022

View articletitled, Low trap density of oxygen-rich HfO2/GaN interface for GaN MIS-HEMT applications

Journal Articles

Analysis of multipole fields for a practical wire lens of an aberration corrector

Tomonori Nakano, Yu Yamazawa

J. Vac. Sci. Technol. B 37, 012901 (2019)

https://doi.org/10.1116/1.5065554

Published: December 2018

View articletitled, Analysis of multipole fields for a practical wire lens of an aberration corrector

Journal Articles

First-order reversal curve diagrams for characterizing ferroelectricity of Hf_0.5Zr_0.5O₂ films grown at different rates

Youngin Goh, Sanghun Jeon

J. Vac. Sci. Technol. B 36, 052204 (2018)

https://doi.org/10.1116/1.5046762

Published: September 2018

View articletitled, First-order reversal curve diagrams for characterizing ferroelectricity of Hf0.5Zr0.5O2 films grown at different rates

Journal Articles

1.5 MeV electron irradiation damage in β-Ga₂O₃ vertical rectifiers

Jiancheng Yang, Fan Ren, Stephen J. Pearton, Gwangseok Yang, Jihyun Kim, Akito Kuramata

J. Vac. Sci. Technol. B 35, 031208 (2017)

https://doi.org/10.1116/1.4983377

Published: May 2017

View articletitled, 1.5 MeV electron irradiation damage in β-Ga2O3 vertical rectifiers

Journal Articles

Voltage-amplitude-controlled complementary and self-compliance bipolar resistive switching of slender filaments in Pt/HfO₂/HfO_x/Pt memory devices

Mei Yang, Hong Wang, Xiaohua Ma, Haixia Gao, Yue Hao

J. Vac. Sci. Technol. B 35, 032203 (2017)

https://doi.org/10.1116/1.4983193

Published: May 2017

View articletitled, Voltage-amplitude-controlled complementary and self-compliance bipolar resistive switching of slender filaments in Pt/HfO2/HfOx/Pt memory devices

Journal Articles

Electrical and physical characteristics of metal–oxide–semiconductor structured nonvolatile memory with HfLa_xTi_yO_z charge trapping layers

Jin-Tsong Jeng, Yan-Lin Li, Chin-Lung Cheng

J. Vac. Sci. Technol. B 35, 022203 (2017)

https://doi.org/10.1116/1.4978048

Published: March 2017

View articletitled, Electrical and physical characteristics of metal–oxide–semiconductor structured nonvolatile memory with HfLaxTiyOz charge trapping layers

Journal Articles

AlN/GaN/AlN resonant tunneling diodes grown by rf-plasma assisted molecular beam epitaxy on freestanding GaN

David F. Storm, Tyler A. Growden, Weidong Zhang, Elliott R. Brown, Neeraj Nepal, D. Scott Katzer, Matthew T. Hardy, Paul R. Berger, David J. Meyer

J. Vac. Sci. Technol. B 35, 02B110 (2017)

https://doi.org/10.1116/1.4977779

Published: March 2017

View articletitled, AlN/GaN/AlN resonant tunneling diodes grown by rf-plasma assisted molecular beam epitaxy on freestanding GaN

Journal Articles

Effect of oxide traps on channel transport characteristics in graphene field effect transistors

Marlene Bonmann, Andrei Vorobiev, Jan Stake, Olof Engström

J. Vac. Sci. Technol. B 35, 01A115 (2017)

https://doi.org/10.1116/1.4973904

Published: January 2017

View articletitled, Effect of oxide traps on channel transport characteristics in graphene field effect transistors

Journal Articles

Electrical transport and magnetic properties of cobalt telluride nanostructures

Bishnu R. Dahal, Rajendra P. Dulal, Ian L. Pegg, John Philip

J. Vac. Sci. Technol. B 34, 051801 (2016)

https://doi.org/10.1116/1.4959576

Published: July 2016

View articletitled, Electrical transport and magnetic properties of cobalt telluride nanostructures

Journal Articles

Interfacial versus filamentary resistive switching in TiO₂ and HfO₂ devices

Gilbert Sassine, Selina La Barbera, Nabil Najjari, Marie Minvielle, Catherine Dubourdieu, Fabien Alibart

J. Vac. Sci. Technol. B 34, 012202 (2016)

https://doi.org/10.1116/1.4940129

Published: January 2016

View articletitled, Interfacial versus filamentary resistive switching in TiO2 and HfO2 devices

Includes: Supplementary data

Journal Articles

Observation of negative differential resistance in GaN-based multiple-quantum-well light-emitting diodes

J. Yang, D. G. Zhao, D. S. Jiang, P. Chen, J. J. Zhu, Z. S. Liu, L. C. Le, X. J. Li, X. G. He, J. P. Liu, L. Q. Zhang, H. Yang

J. Vac. Sci. Technol. B 34, 011206 (2016)

https://doi.org/10.1116/1.4937265

Published: December 2015

View articletitled, Observation of negative differential resistance in GaN-based multiple-quantum-well light-emitting diodes

Journal Articles

Ferromagnetic, spin glass, and antiferromagnetic behaviors in Cd_1−xMn_xTe nanowires

Keshab R. Sapkota, Rajendra Dulal, Bishnu R. Dahal, Ian L. Pegg, John Philip

J. Vac. Sci. Technol. B 33, 051807 (2015)

https://doi.org/10.1116/1.4929897

Published: September 2015

View articletitled, Ferromagnetic, spin glass, and antiferromagnetic behaviors in Cd1−xMnxTe nanowires

Journal Articles

Passivation of oxide traps in gallium arsenide (semiconductor) metal-oxide-semiconductor capacitor with high-k dielectric by using fluorine incorporation

Lining Liu, Hoi Wai Choi, Pui To Lai, Jingping Xu

J. Vac. Sci. Technol. B 33, 050601 (2015)

https://doi.org/10.1116/1.4927483

Published: July 2015

View articletitled, Passivation of oxide traps in gallium arsenide (semiconductor) metal-oxide-semiconductor capacitor with high-k dielectric by using fluorine incorporation

Journal Articles

Properties of epitaxial barium titanate thin films using a highly volatile Ba(hfa)₂triglyme precursor

Young Kyu Jeong, Bruce W. Wessels

J. Vac. Sci. Technol. B 33, 051206 (2015)

https://doi.org/10.1116/1.4927380

Published: July 2015

View articletitled, Properties of epitaxial barium titanate thin films using a highly volatile Ba(hfa)2triglyme precursor

Journal Articles

Core–shell FeNi–Ni_xFe_3−xO₄ nanowires

Wiaam Al Salmi, Parshu Gyawali, Bishnu Dahal, Ian L. Pegg, John Philip

J. Vac. Sci. Technol. B 33, 040604 (2015)

https://doi.org/10.1116/1.4926959

Published: July 2015

View articletitled, Core–shell FeNi–NixFe3−xO4 nanowires

Journal Articles

Photoresponse of an oxide semiconductor photosensor

Seung-Eon Ahn, Sungho Park, Taeho Kim, Junghak Park, Sanghun Jeon

J. Vac. Sci. Technol. B 33, 031205 (2015)

https://doi.org/10.1116/1.4916626

Published: April 2015

View articletitled, Photoresponse of an oxide semiconductor photosensor

Journal Articles

Surface analytical investigation on organometal triiodide perovskite

Chenggong Wang, Xiaoliang Liu, Congcong Wang, Zhengguo Xiao, Cheng Bi, Yuchuan Shao, Jinsong Huang, Yongli Gao

J. Vac. Sci. Technol. B 33, 032401 (2015)

https://doi.org/10.1116/1.4915499

Published: March 2015

View articletitled, Surface analytical investigation on organometal triiodide perovskite

Journal Articles

Fabrication of pseudo-spin-valve giant magnetoresistance arrays for nanomagnet logic by liftoff and the snow-jet process

Peng Li, Vijay Sankar, Faisal Shah, Himadri Dey, Gyorgy Csaba, Wolfgang Porod, Gary H. Bernstein, Michael Niemier, Xiaobo S. Hu, Joseph Nahas

J. Vac. Sci. Technol. B 33, 022801 (2015)

https://doi.org/10.1116/1.4907408

Published: February 2015

View articletitled, Fabrication of pseudo-spin-valve giant magnetoresistance arrays for nanomagnet logic by liftoff and the snow-jet process

Journal Articles

Dependence of mode transition points and hysteresis upon plasma pressure in a re-entrant configuration of inductively coupled plasma

Jian Wang, Jin-xiang Cao, Xiao Zhang, Yin-chang Du, Zhe Zheng, Yu Liu, Liang Xu, Pi Wang

J. Vac. Sci. Technol. B 33, 022601 (2015)

https://doi.org/10.1116/1.4908170

Published: February 2015

View articletitled, Dependence of mode transition points and hysteresis upon plasma pressure in a re-entrant configuration of inductively coupled plasma

Journal Articles

Negative gate-bias instability of ZnO thin-film transistors studied by current–voltage and capacitance–voltage analyses

Yurong Liu, Shufeng Mo, Ruohe Yao, Pui To Lai

J. Vac. Sci. Technol. B 32, 061208 (2014)

https://doi.org/10.1116/1.4901505

Published: November 2014

View articletitled, Negative gate-bias instability of ZnO thin-film transistors studied by current–voltage and capacitance–voltage analyses

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Low trap density of oxygen-rich HfO₂/GaN interface for GaN MIS-HEMT applications

Analysis of multipole fields for a practical wire lens of an aberration corrector

First-order reversal curve diagrams for characterizing ferroelectricity of Hf_0.5Zr_0.5O₂ films grown at different rates

1.5 MeV electron irradiation damage in β-Ga₂O₃ vertical rectifiers

Voltage-amplitude-controlled complementary and self-compliance bipolar resistive switching of slender filaments in Pt/HfO₂/HfO_x/Pt memory devices

Electrical and physical characteristics of metal–oxide–semiconductor structured nonvolatile memory with HfLa_xTi_yO_z charge trapping layers

AlN/GaN/AlN resonant tunneling diodes grown by rf-plasma assisted molecular beam epitaxy on freestanding GaN

Effect of oxide traps on channel transport characteristics in graphene field effect transistors

Electrical transport and magnetic properties of cobalt telluride nanostructures

Interfacial versus filamentary resistive switching in TiO₂ and HfO₂ devices

Observation of negative differential resistance in GaN-based multiple-quantum-well light-emitting diodes

Ferromagnetic, spin glass, and antiferromagnetic behaviors in Cd_1−xMn_xTe nanowires

Passivation of oxide traps in gallium arsenide (semiconductor) metal-oxide-semiconductor capacitor with high-k dielectric by using fluorine incorporation

Properties of epitaxial barium titanate thin films using a highly volatile Ba(hfa)₂triglyme precursor

Core–shell FeNi–Ni_xFe_3−xO₄ nanowires

Photoresponse of an oxide semiconductor photosensor

Surface analytical investigation on organometal triiodide perovskite

Fabrication of pseudo-spin-valve giant magnetoresistance arrays for nanomagnet logic by liftoff and the snow-jet process

Dependence of mode transition points and hysteresis upon plasma pressure in a re-entrant configuration of inductively coupled plasma

Negative gate-bias instability of ZnO thin-film transistors studied by current–voltage and capacitance–voltage analyses

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