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Journal Articles

Novel surface wave technique for moderate-pressure plasma measurements

Shadhin Hussain, Matthew Goeckner

J. Vac. Sci. Technol. B 42, 034005 (2024)

https://doi.org/10.1116/6.0003331

Published: April 2024

View article titled, Novel surface wave technique for moderate-pressure plasma measurements

Journal Articles

Stable and low loss oxide layer on α-Ta (110) film for superconducting qubits

Zengqian Ding, Boyi Zhou, Tao Wang, Lina Yang, Yanfu Wu, Xiao Cai, Kanglin Xiong, Jiagui Feng

J. Vac. Sci. Technol. B 42, 022209 (2024)

https://doi.org/10.1116/6.0003368

Published: February 2024

View article titled, Stable and low loss oxide layer on α-Ta (110) film for superconducting qubits

Includes: Supplementary data

Journal Articles

Influence of Al₂O₃ atomic-layer deposition temperature on positive-bias instability of metal/Al₂O₃/β-Ga₂O₃ capacitors

Atsushi Hiraiwa, Kiyotaka Horikawa, Hiroshi Kawarada, Motohisa Kado, Katsunori Danno

J. Vac. Sci. Technol. B 42, 012207 (2024)

https://doi.org/10.1116/6.0003186

Published: January 2024

View article titled, Influence of Al2O3 atomic-layer deposition temperature on positive-bias instability of metal/Al2O3/β-Ga2O3 capacitors

Journal Articles

Influence of gate material and diamond surface termination on current conduction in metal/Al₂O₃/diamond capacitors

Satoshi Okubo, Daisuke Matsumura, Hiroshi Kawarada, Atsushi Hiraiwa

J. Vac. Sci. Technol. B 42, 012202 (2024)

https://doi.org/10.1116/6.0003272

Published: January 2024

View article titled, Influence of gate material and diamond surface termination on current conduction in metal/Al2O3/diamond capacitors

Journal Articles

Modification of discharge sequences to control the random dispersion of flake particles during wafer etching

Ching Ming Ku, Wen Yea Jang, Stone Cheng

J. Vac. Sci. Technol. B 41, 064203 (2023)

https://doi.org/10.1116/6.0002974

Published: November 2023

View article titled, Modification of discharge sequences to control the random dispersion of flake particles during wafer etching

Journal Articles

Effect of sputtering-target composition on the structure, dielectric, ferroelectric, and energy storage properties of highly (00l)-oriented Ba(Zr_xTi_1–x)O₃ films

Lei Li, Daili Gong, Fangren Hu, Hongbo Cheng, Wei Zhang

J. Vac. Sci. Technol. B 41, 043801 (2023)

https://doi.org/10.1116/6.0002547

Published: June 2023

View article titled, Effect of sputtering-target composition on the structure, dielectric, ferroelectric, and energy storage properties of highly (00l)-oriented Ba(ZrxTi1–x)O3 films

Journal Articles

Heat transfer mechanism of electrostatic chuck surface and wafer backside to improve wafer temperature uniformity

Tae Woong Yoon, Sung Il Cho, Minsuk Choi, Sang Jeen Hong

J. Vac. Sci. Technol. B 41, 044002 (2023)

https://doi.org/10.1116/6.0002737

Published: May 2023

View article titled, Heat transfer mechanism of electrostatic chuck surface and wafer backside to improve wafer temperature uniformity

Journal Articles

Temperature dependence of the infrared dielectric function and the direct bandgap of InSb from 80 to 725 K

Melissa Rivero Arias, Carlos A. Armenta, Carola Emminger, Cesy M. Zamarripa, Nuwanjula S. Samarasingha, Jaden R. Love, Sonam Yadav, Stefan Zollner

J. Vac. Sci. Technol. B 41, 022203 (2023)

https://doi.org/10.1116/6.0002326

Published: February 2023

View article titled, Temperature dependence of the infrared dielectric function and the direct bandgap of InSb from 80 to 725 K

Includes: Supplementary data

Journal Articles

Limitations of the independent control of ion flux and energy distribution function in high-density inductively coupled chlorine plasmas

Dmitry Levko, Rochan R. Upadhyay, Kenta Suzuki, Laxminarayan L. Raja

J. Vac. Sci. Technol. B 41, 012205 (2023)

https://doi.org/10.1116/6.0002236

Published: December 2022

View article titled, Limitations of the independent control of ion flux and energy distribution function in high-density inductively coupled chlorine plasmas

Journal Articles

Effect of Hf concentration on energy storage performance of lead-free BaHf_xTi_1−xO₃ thin film capacitors

Tingzhi Duan, Tianyi Hu, Jing Jin, Chunrui Ma, Ming Liu

J. Vac. Sci. Technol. B 40, 062207 (2022)

https://doi.org/10.1116/6.0001967

Published: November 2022

View article titled, Effect of Hf concentration on energy storage performance of lead-free BaHfxTi1−xO3 thin film capacitors

Includes: Supplementary data

Journal Articles

Spectro-ellipsometric probing of wetting, nucleation, and dot/island formation during photo-excited chemical vapor deposition of Ge on SiO₂ substrate

Housei Akazawa

J. Vac. Sci. Technol. B 40, 062204 (2022)

https://doi.org/10.1116/6.0002067

Published: October 2022

View article titled, Spectro-ellipsometric probing of wetting, nucleation, and dot/island formation during photo-excited chemical vapor deposition of Ge on SiO2 substrate

Journal Articles

Low trap density of oxygen-rich HfO₂/GaN interface for GaN MIS-HEMT applications

Wei-Chih Cheng, Jiaqi He, Minghao He, Zepeng Qiao, Yang Jiang, Fangzhou Du, Xiang Wang, Haimin Hong, Qing Wang, Hongyu Yu

J. Vac. Sci. Technol. B 40, 022212 (2022)

https://doi.org/10.1116/6.0001654

Published: March 2022

View article titled, Low trap density of oxygen-rich HfO2/GaN interface for GaN MIS-HEMT applications

Journal Articles

Identifying extreme ultraviolet lithography attenuated phase shifting mask absorber materials using effective media approximation modeling

Rajiv Sejpal, Bruce Smith

J. Vac. Sci. Technol. B 39, 062604 (2021)

https://doi.org/10.1116/6.0001298

Published: November 2021

View article titled, Identifying extreme ultraviolet lithography attenuated phase shifting mask absorber materials using effective media approximation modeling

Journal Articles

Temperature dependence of the optical phonon reflection band in GaP

Nuwanjula S. Samarasingha, Stefan Zollner

J. Vac. Sci. Technol. B 39, 052201 (2021)

https://doi.org/10.1116/6.0001118

Published: July 2021

View article titled, Temperature dependence of the optical phonon reflection band in GaP

Includes: Supplementary data

Journal Articles

Gate engineering in metal insulator semiconductor capacitors on native gallium nitride substrates for applications with high lifetime requirements

Kevin Dannecker, Jens Baringhaus

J. Vac. Sci. Technol. B 39, 012201 (2021)

https://doi.org/10.1116/6.0000440

Published: December 2020

View article titled, Gate engineering in metal insulator semiconductor capacitors on native gallium nitride substrates for applications with high lifetime requirements

Journal Articles

Postdeposition annealing effect on the reliability of atomic-layer-deposited Al₂O₃ films on GaN

Kiyotaka Horikawa (堀川清貴), Satoshi Okubo (大久保智), Hiroshi Kawarada (川原田洋), Atsushi Hiraiwa (平岩篤)

J. Vac. Sci. Technol. B 38, 062207 (2020)

https://doi.org/10.1116/6.0000531

Published: October 2020

View article titled, Postdeposition annealing effect on the reliability of atomic-layer-deposited Al2O3 films on GaN

Journal Articles

Experimental reliability study of cumulative damage models on state-of-the-art semiconductor technologies for step-stress tests and mission profile stresses

A. Hirler, J. Biba, D. Lipp, H. Lochner, M. Siddabathula, S. Simon, T. Sulima, M. Wiatr, W. Hansch

J. Vac. Sci. Technol. B 38, 064001 (2020)

https://doi.org/10.1116/6.0000504

Published: September 2020

View article titled, Experimental reliability study of cumulative damage models on state-of-the-art semiconductor technologies for step-stress tests and mission profile stresses

Journal Articles

Dielectric breakdown in epitaxial BaTiO₃ thin films

HsinWei Wu, Patrick Ponath, Edward L. Lin, Robert M. Wallace, Chadwin Young, John G. Ekerdt, Alexander A. Demkov, Martha R. McCartney, David J. Smith

J. Vac. Sci. Technol. B 38, 044007 (2020)

https://doi.org/10.1116/6.0000237

Published: July 2020

View article titled, Dielectric breakdown in epitaxial BaTiO3 thin films

Journal Articles

Thickness dependence of infrared lattice absorption and excitonic absorption in ZnO layers on Si and SiO₂ grown by atomic layer deposition

Nuwanjula S. Samarasingha, Stefan Zollner, Dipayan Pal, Rinki Singh, Sudeshna Chattopadhyay

J. Vac. Sci. Technol. B 38, 042201 (2020)

https://doi.org/10.1116/6.0000184

Published: May 2020

View article titled, Thickness dependence of infrared lattice absorption and excitonic absorption in ZnO layers on Si and SiO2 grown by atomic layer deposition

Includes: Supplementary data

Journal Articles

Band offsets at amorphous hydrogenated boron nitride/high-k oxide interfaces from x-ray photoelectron spectroscopy with charging effects analysis

Michelle M. Paquette, Anthony N. Caruso, Justin Brockman, Jeff Bielefeld, Markus Kuhn, Sean W. King

J. Vac. Sci. Technol. B 38, 030601 (2020)

https://doi.org/10.1116/6.0000005

Published: April 2020

View article titled, Band offsets at amorphous hydrogenated boron nitride/high-k oxide interfaces from x-ray photoelectron spectroscopy with charging effects analysis

NARROW

Topics

Novel surface wave technique for moderate-pressure plasma measurements

Stable and low loss oxide layer on α-Ta (110) film for superconducting qubits

Influence of Al₂O₃ atomic-layer deposition temperature on positive-bias instability of metal/Al₂O₃/β-Ga₂O₃ capacitors

Influence of gate material and diamond surface termination on current conduction in metal/Al₂O₃/diamond capacitors

Modification of discharge sequences to control the random dispersion of flake particles during wafer etching

Effect of sputtering-target composition on the structure, dielectric, ferroelectric, and energy storage properties of highly (00l)-oriented Ba(Zr_xTi_1–x)O₃ films

Heat transfer mechanism of electrostatic chuck surface and wafer backside to improve wafer temperature uniformity

Temperature dependence of the infrared dielectric function and the direct bandgap of InSb from 80 to 725 K

Limitations of the independent control of ion flux and energy distribution function in high-density inductively coupled chlorine plasmas

Effect of Hf concentration on energy storage performance of lead-free BaHf_xTi_1−xO₃ thin film capacitors

Spectro-ellipsometric probing of wetting, nucleation, and dot/island formation during photo-excited chemical vapor deposition of Ge on SiO₂ substrate

Low trap density of oxygen-rich HfO₂/GaN interface for GaN MIS-HEMT applications

Identifying extreme ultraviolet lithography attenuated phase shifting mask absorber materials using effective media approximation modeling

Temperature dependence of the optical phonon reflection band in GaP

Gate engineering in metal insulator semiconductor capacitors on native gallium nitride substrates for applications with high lifetime requirements

Postdeposition annealing effect on the reliability of atomic-layer-deposited Al₂O₃ films on GaN

Experimental reliability study of cumulative damage models on state-of-the-art semiconductor technologies for step-stress tests and mission profile stresses

Dielectric breakdown in epitaxial BaTiO₃ thin films

Thickness dependence of infrared lattice absorption and excitonic absorption in ZnO layers on Si and SiO₂ grown by atomic layer deposition

Band offsets at amorphous hydrogenated boron nitride/high-k oxide interfaces from x-ray photoelectron spectroscopy with charging effects analysis

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