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Journal Articles

Investigation of a defect in the β-Ga2O3 substrate material from capacitance transients

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Jian V. Li, Adam T. Neal, Shin Mou, Man Hoi Wong
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 064001 (2022)
https://doi.org/10.1116/6.0002045
Published: October 2022
View articletitled, Investigation of a defect in the β-Ga2O3 substrate material from capacitance transients
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Journal Articles

Dry etch damage in n-type crystalline silicon wafers assessed by deep-level transient spectroscopy and minority carrier lifetime

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Eddy Simoen, Hariharsudan Sivaramakrishnan Radhakrishnan, Md. Gius Uddin, Ivan Gordon, Jef Poortmans, Chong Wang, Wei Li
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 041201 (2018)
https://doi.org/10.1116/1.5026529
Published: June 2018
View articletitled, Dry etch damage in n-type crystalline silicon wafers assessed by deep-level transient spectroscopy and minority carrier lifetime
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Journal Articles

Evolution of traps in TiN/O3-sourced Al2O3/GaN gate structures with thermal annealing temperature

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Xinyu Liu, Sen Huang, Qilong Bao, Xinhua Wang, Ke Wei, Yankui Li, Jinjuan Xiang, Chao Zhao, Xuelin Yang, Bo Shen, Shiping Guo
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 022202 (2018)
https://doi.org/10.1116/1.5010029
Published: February 2018
View articletitled, Evolution of traps in TiN/O3-sourced Al2O3/GaN gate structures with thermal annealing temperature
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Electrical analyses of GaN PIN diodes grown on patterned sapphire substrates

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Li-Wei Shan, Zhe-Yu Liu, Min-Pang Lin, Chia-Jui Yu, Kuang-Chien Hsieh, Meng-Chyi Wu
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 052203 (2017)
https://doi.org/10.1116/1.4997900
Published: August 2017
View articletitled, Electrical analyses of GaN PIN diodes grown on patterned sapphire substrates
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Journal Articles

Investigation on deep level defects in polycrystalline ZnO thin films

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Christos Tsiarapas, Dimitra Girginoudi, Evangelos Ioannou Dimitriadis, Nikolaos Georgoulas
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 031203 (2017)
https://doi.org/10.1116/1.4979691
Published: April 2017
View articletitled, Investigation on deep level defects in polycrystalline ZnO thin films
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Journal Articles

Deep traps and instabilities in AlGaN/GaN high electron mobility transistors on Si substrates

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Alexander Y. Polyakov, N. B. Smirnov, A. V. Turutin, I. S. Shemerov, Fan Ren, S. J. Pearton, J. Wayne Johnson
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 041216 (2016)
https://doi.org/10.1116/1.4953347
Published: June 2016
View articletitled, Deep traps and instabilities in AlGaN/GaN high electron mobility transistors on Si substrates
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Journal Articles

Electrical characterization of dry and wet processed interface layer in Ge/High-K devices

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Y. M. Ding, D. Misra, M. N. Bhuyian, Kandabara Tapily, Robert D. Clark, Steve Consiglio, Cory S. Wajda, Gert J. Leusink
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 021203 (2016)
https://doi.org/10.1116/1.4943559
Published: March 2016
View articletitled, Electrical characterization of dry and wet processed interface layer in Ge/High-K devices
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Journal Articles

Deep level transient spectroscopy in III-Nitrides: Decreasing the effects of series resistance

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Alexander Y. Polyakov, Nikolai B. Smirnov, In-Hwan Lee, Stephen J. Pearton
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 061203 (2015)
https://doi.org/10.1116/1.4932013
Published: September 2015
View articletitled, Deep level transient spectroscopy in III-Nitrides: Decreasing the effects of series resistance
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Journal Articles

Hole trap distribution on 2 MeV electron irradiated high-k dielectrics

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Salvador Dueñas, Helena Castán, Héctor García, Lisa María Fuentes, Luis Bailón, Francesca Campabadal, Joan Marc Rafí, Mireia Bargalló González, Kenitirou Takakura, Isao Tsunoda, Masashi Yoneoka
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 032201 (2015)
https://doi.org/10.1116/1.4915617
Published: March 2015
View articletitled, Hole trap distribution on 2 MeV electron irradiated high-k dielectrics
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Journal Articles

Spatial location of the Ec-0.6 eV electron trap in AlGaN/GaN heterojunctions

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In-Hwan Lee, Alexander Y. Polyakov, Nikolai B. Smirnov, Cheol-Koo Hahn, S. J. Pearton
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 050602 (2014)
https://doi.org/10.1116/1.4895840
Published: September 2014
View articletitled, Spatial location of the Ec-0.6 eV electron trap in AlGaN/GaN heterojunctions
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Journal Articles

Comprehensive characterization of interface and oxide states in metal/oxide/semiconductor capacitors by pulsed mode capacitance and differential isothermal capacitance spectroscopy

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Pierre R. Muret
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 03D114 (2014)
https://doi.org/10.1116/1.4865912
Published: February 2014
View articletitled, Comprehensive characterization of interface and oxide states in metal/oxide/semiconductor capacitors by pulsed mode capacitance and differential isothermal capacitance spectroscopy
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Journal Articles

Closed cycle chiller as a low cost alternative to liquid nitrogen in molecular beam epitaxy

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Ryan B. Lewis, James A. Mackenzie, Thomas Tiedje, Daniel A. Beaton, Mostafa Masnadi-Shirazi, Vahid Bahrami-Yekta, Keelan P. Watkins, Patricia M. Mooney
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 31, 03C116 (2013)
https://doi.org/10.1116/1.4795512
Published: March 2013
View articletitled, Closed cycle chiller as a low cost alternative to liquid nitrogen in molecular beam epitaxy
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Journal Articles

Spectroscopic study of polysilicon traps by means of fast capacitance transients

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Maria Toledano-Luque, Baojun Tang, Robin Degraeve, Ben Kaczer, Eddy Simoen, Jan Van Houdt, Guido Groeseneken
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 31, 01A110 (2013)
https://doi.org/10.1116/1.4768682
Published: December 2012
View articletitled, Spectroscopic study of polysilicon traps by means of fast capacitance transients
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Journal Articles

Interface quality of Sc2O3 and Gd2O3 films based metal–insulator–silicon structures using Al, Pt, and Ti gates: Effect of buffer layers and scavenging electrodes

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Alfonso Gómez, Helena Castán, Héctor García, Salvador Dueñas, Luis Bailón, María Ángela Pampillón, Pedro Carlos Feijoo, Enrique San Andrés
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 31, 01A106 (2013)
https://doi.org/10.1116/1.4768678
Published: November 2012
View articletitled, Interface quality of Sc2O3 and Gd2O3 films based metal–insulator–silicon structures using Al, Pt, and Ti gates: Effect of buffer layers and scavenging electrodes
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Journal Articles

Interface studies on high-k/GaAs MOS capacitors by deep level transient spectroscopy

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Souvik Kundu, Yelagam Anitha, Supratic Chakraborty, Pallab Banerji
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 30, 051206 (2012)
https://doi.org/10.1116/1.4745882
Published: August 2012
View articletitled, Interface studies on high-k/GaAs MOS capacitors by deep level transient spectroscopy
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Journal Articles

Metastable centers in AlGaN/AlN/GaN heterostructures

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Alexander Y. Polyakov, Nick B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, Stephen J. Pearton, Fan Ren, S. Yu. Karpov, K. D. Shcherbachev, N. G. Kolin, Wantae Lim
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 30, 041209 (2012)
https://doi.org/10.1116/1.4731256
Published: July 2012
View articletitled, Metastable centers in AlGaN/AlN/GaN heterostructures
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Journal Articles

Electrical properties of InAlN/GaN high electron mobility transistor with Al 2 O 3 , ZrO 2 , and GdScO 3 gate dielectrics

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K. Čičo, K. Hušeková, M. Ťapajna, D. Gregušová, R. Stoklas, J. Kuzmík, J.-F. Carlin, N. Grandjean, D. Pogany, K. Fröhlich
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 01A808 (2011)
https://doi.org/10.1116/1.3521506
Published: January 2011
View articletitled, Electrical properties of InAlN/GaN high electron mobility transistor with Al 2 O 3 , ZrO 2 , and GdScO 3 gate dielectrics
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Journal Articles

Electrical characterization of high- k based metal-insulator-semiconductor structures with negative resistance effect when using Al 2 O 3 and nanolaminated films deposited on p -Si

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A. Gómez, H. Castán, H. García, S. Dueñas, L. Bailón, F. Campabadal, J. M. Rafí, M. Zabala
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 01A901 (2011)
https://doi.org/10.1116/1.3521383
Published: January 2011
View articletitled, Electrical characterization of high- k based metal-insulator-semiconductor structures with negative resistance effect when using Al 2 O 3 and nanolaminated films deposited on p -Si
Open the PDF for Electrical characterization of high- k based metal-insulator-semiconductor structures with negative resistance effect when using Al 2 O 3 and nanolaminated films deposited on p -Si in another window
Journal Articles

Polarity-related asymetry at ZnO surfaces and metal interfaces

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Yufeng Dong, Z.-Q. Fang, D. C. Look, D. R. Doutt, M. J. Hetzer, L. J. Brillson
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 1710–1716 (2009)
https://doi.org/10.1116/1.3119681
Published: May 2009
View articletitled, Polarity-related asymetry at ZnO surfaces and metal interfaces
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Journal Articles

Metal contacts on bulk ZnO crystal treated with remote oxygen plasma

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Z.-Q. Fang, B. Claflin, D. C. Look, Y.-F. Dong, L. Brillson
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 1774–1779 (2009)
https://doi.org/10.1116/1.3095814
Published: May 2009
View articletitled, Metal contacts on bulk ZnO crystal treated with remote oxygen plasma
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