Page 1 | Search Results | Journal of Vacuum Science & Technology B

1-20 of 230

Sort by

Sort Order Select

Journal Articles

Study on geometry-dependent n⁺-InGaN regrowth via MOCVD for AlN/GaN ohmic contact application

Yu-Xi Zhou, Jie-Jie Zhu, Jing-Shu Guo, Ling-Jie Qin, Bo-Wen Zhang, Meng-Di Li, Ming-Chen Zhang, Xiao-Hua Ma

J. Vac. Sci. Technol. B 42, 052201 (2024)

https://doi.org/10.1116/6.0003690

Published: August 2024

View article titled, Study on geometry-dependent n+-InGaN regrowth via MOCVD for AlN/GaN ohmic contact application

Journal Articles

Characteristics of β-(Al_xGa_1−x)₂O₃/Ga₂O₃ dual-metal gate modulation-doped field-effect transistors simulated by TCAD

Xiaole Jia, Yibo Wang, Cizhe Fang, Bochang Li, Zhengdong Luo, Yan Liu, Yue Hao, Genquan Han

J. Vac. Sci. Technol. B 42, 032207 (2024)

https://doi.org/10.1116/6.0003502

Published: April 2024

View article titled, Characteristics of β-(AlxGa1−x)2O3/Ga2O3 dual-metal gate modulation-doped field-effect transistors simulated by TCAD

Journal Articles

Sodium adsorption on nanometer-thick TiO₂ channel thin-film transistors for enhanced drain currents

Ryo Miyazawa, Haruto Suzuki, Hibiki Takeda, Masanori Miura, Bashir Ahmmad, Fumihiko Hirose

J. Vac. Sci. Technol. B 42, 022213 (2024)

https://doi.org/10.1116/6.0003217

Published: March 2024

View article titled, Sodium adsorption on nanometer-thick TiO2 channel thin-film transistors for enhanced drain currents

Journal Articles

Influence of processing conditions on the titanium–aluminum contact metallization on a silicon wafer for thermal management

Manish Singh, Lakshmi Narayanan Ramasubramanian, Raj N. Singh

J. Vac. Sci. Technol. B 41, 042208 (2023)

https://doi.org/10.1116/6.0002749

Published: June 2023

View article titled, Influence of processing conditions on the titanium–aluminum contact metallization on a silicon wafer for thermal management

Journal Articles

Ohmic contact structures on β-Ga₂O₃ with n+ β-Ga₂O₃ pulsed laser deposition layers

Elizabeth V. Favela, Hyung Min Jeon, Kevin D. Leedy, Kun Zhang, Szu-Wei Tung, Francelia Sanchez Escobar, C. V. Ramana, Lisa M. Porter

J. Vac. Sci. Technol. B 41, 032205 (2023)

https://doi.org/10.1116/6.0002620

Published: May 2023

View article titled, Ohmic contact structures on β-Ga2O3 with n+ β-Ga2O3 pulsed laser deposition layers

Includes: Supplementary data

Journal Articles

Fabrication, and Direct Current and cryogenic analysis of SF₆-treated AlGaN/GaN Schottky barrier diodes

Quentin Fornasiero, Nicolas Defrance, Sylvie Lepilliet, Vanessa Avramovic, Yvon Cordier, Eric Frayssinet, Marie Lesecq, Nadir Idir, Jean-Claude De Jaeger

J. Vac. Sci. Technol. B 41, 012202 (2023)

https://doi.org/10.1116/6.0002125

Published: December 2022

View article titled, Fabrication, and Direct Current and cryogenic analysis of SF6-treated AlGaN/GaN Schottky barrier diodes

Journal Articles

Method to create cuprate tunnel junctions with atomically sharp interfaces

Anthony T. Bollinger, Xi He, Xiaotao Xu, Xiaoyan Shi, Ivan Božović

J. Vac. Sci. Technol. B 40, 015001 (2022)

https://doi.org/10.1116/6.0001487

Published: December 2021

View article titled, Method to create cuprate tunnel junctions with atomically sharp interfaces

Journal Articles

Extending the metal-induced gap state model of Schottky barriers

John Robertson, Yuzheng Guo, Zhaofu Zhang, Hongfei Li

J. Vac. Sci. Technol. B 38, 042208 (2020)

https://doi.org/10.1116/6.0000164

Published: July 2020

View article titled, Extending the metal-induced gap state model of Schottky barriers

Journal Articles

High-breakdown-voltage AlGaN-channel metal-insulator-semiconductor heterostructure field-effect transistors employing a quaternary AlGaInN barrier layer and an Al₂O₃ gate insulator

Daiki Hosomi, Keita Furuoka, Heng Chen, Saki Saito, Toshiharu Kubo, Takashi Egawa, Makoto Miyoshi

J. Vac. Sci. Technol. B 37, 041205 (2019)

https://doi.org/10.1116/1.5097338

Published: July 2019

View article titled, High-breakdown-voltage AlGaN-channel metal-insulator-semiconductor heterostructure field-effect transistors employing a quaternary AlGaInN barrier layer and an Al2O3 gate insulator

Journal Articles

Effect of proton irradiation energy on SiN_x/AlGaN/GaN metal-insulator semiconductor high electron mobility transistors

Chaker Fares, Fan Ren, Stephen J. Pearton, Gwangseok Yang, Jihyun Kim, Chien-Fong Lo, J. Wayne Johnson

J. Vac. Sci. Technol. B 36, 052202 (2018)

https://doi.org/10.1116/1.5049596

Published: September 2018

View article titled, Effect of proton irradiation energy on SiNx/AlGaN/GaN metal-insulator semiconductor high electron mobility transistors

Journal Articles

Effect of alpha-particle irradiation dose on SiN_x/AlGaN/GaN metal–insulator semiconductor high electron mobility transistors

Chaker Fares, Fan Ren, Stephen J. Pearton, Gwangseok Yang, Jihyun Kim, Chien-Fong Lo, J. Wayne Johnson

J. Vac. Sci. Technol. B 36, 041203 (2018)

https://doi.org/10.1116/1.5042261

Published: July 2018

View article titled, Effect of alpha-particle irradiation dose on SiNx/AlGaN/GaN metal–insulator semiconductor high electron mobility transistors

Journal Articles

Effect of adding an insulator between metal and semiconductor layers on contact resistance

Hyunjung Kim, Woochool Jang, Heewoo Lim, Youngkyun Kweon, Minwook Bang, Saejin Kwon, Bumsik Kim, Haewon Cho, Hyeongtag Jeon

J. Vac. Sci. Technol. B 36, 032202 (2018)

https://doi.org/10.1116/1.5020310

Published: April 2018

View article titled, Effect of adding an insulator between metal and semiconductor layers on contact resistance

Journal Articles

Three-wire method to characterize the thermoelectric properties of one-dimensional materials

Weigang Ma, Shaoyi Shi, Xing Zhang

J. Vac. Sci. Technol. B 36, 022903 (2018)

https://doi.org/10.1116/1.5022118

Published: January 2018

View article titled, Three-wire method to characterize the thermoelectric properties of one-dimensional materials

Journal Articles

Improvement of Ohmic contacts on Ga₂O₃ through use of ITO-interlayers

Patrick H. Carey, IV, Jiancheng Yang, Fan Ren, David C. Hays, Stephen J. Pearton, Akito Kuramata, Ivan I. Kravchenko

J. Vac. Sci. Technol. B 35, 061201 (2017)

https://doi.org/10.1116/1.4995816

Published: October 2017

View article titled, Improvement of Ohmic contacts on Ga2O3 through use of ITO-interlayers

Journal Articles

Simulation and characterization of short-channel organic thin-film transistors fabricated using ink-jet printing and an imprint process

Juhyun Bae, Kyohyeok Kim, Namyong Kwon, Ilsub Chung

J. Vac. Sci. Technol. B 35, 032401 (2017)

https://doi.org/10.1116/1.4981930

Published: April 2017

View article titled, Simulation and characterization of short-channel organic thin-film transistors fabricated using ink-jet printing and an imprint process

Journal Articles

Effect of oxide traps on channel transport characteristics in graphene field effect transistors

Marlene Bonmann, Andrei Vorobiev, Jan Stake, Olof Engström

J. Vac. Sci. Technol. B 35, 01A115 (2017)

https://doi.org/10.1116/1.4973904

Published: January 2017

View article titled, Effect of oxide traps on channel transport characteristics in graphene field effect transistors

Journal Articles

Multifield sub-5 nm overlay in imprint lithography

Paras Ajay, Anshuman Cherala, Bailey A. Yin, Euclid E. Moon, R. Fabian Pease, S. V. Sreenivasan

J. Vac. Sci. Technol. B 34, 061605 (2016)

https://doi.org/10.1116/1.4967371

Published: November 2016

View article titled, Multifield sub-5 nm overlay in imprint lithography

Journal Articles

Aluminum-based contacts for use in GaSb-based diode lasers

Thanh-Nam Tran, Saroj Kumar Patra, Magnus Breivik, Bjørn-Ove Fimland

J. Vac. Sci. Technol. B 34, 061207 (2016)

https://doi.org/10.1116/1.4967300

Published: November 2016

View article titled, Aluminum-based contacts for use in GaSb-based diode lasers

Journal Articles

Mask registration and lithography platform portability for nitride fin-based field effect transistors prototyping

Jae Woo Suh, Michael E. Babb, Edward L. Principe, Harlan Rusty Harris

J. Vac. Sci. Technol. B 34, 06K602 (2016)

https://doi.org/10.1116/1.4967182

Published: November 2016

View article titled, Mask registration and lithography platform portability for nitride fin-based field effect transistors prototyping

Journal Articles

Device characteristics and performance estimation of nearly lattice-matched InAlN/AlGaN heterostructure field-effect transistors

Makoto Miyoshi, Tatsuya Tsutsumi, Gosuke Nishino, Yuta Miyachi, Mayuko Okada, Joseph J. Freedsman, Takashi Egawa

J. Vac. Sci. Technol. B 34, 050602 (2016)

https://doi.org/10.1116/1.4961908

Published: August 2016

View article titled, Device characteristics and performance estimation of nearly lattice-matched InAlN/AlGaN heterostructure field-effect transistors

NARROW

Topics

Study on geometry-dependent n⁺-InGaN regrowth via MOCVD for AlN/GaN ohmic contact application

Characteristics of β-(Al_xGa_1−x)₂O₃/Ga₂O₃ dual-metal gate modulation-doped field-effect transistors simulated by TCAD

Sodium adsorption on nanometer-thick TiO₂ channel thin-film transistors for enhanced drain currents

Influence of processing conditions on the titanium–aluminum contact metallization on a silicon wafer for thermal management

Ohmic contact structures on β-Ga₂O₃ with n+ β-Ga₂O₃ pulsed laser deposition layers

Fabrication, and Direct Current and cryogenic analysis of SF₆-treated AlGaN/GaN Schottky barrier diodes

Method to create cuprate tunnel junctions with atomically sharp interfaces

Extending the metal-induced gap state model of Schottky barriers

High-breakdown-voltage AlGaN-channel metal-insulator-semiconductor heterostructure field-effect transistors employing a quaternary AlGaInN barrier layer and an Al₂O₃ gate insulator

Effect of proton irradiation energy on SiN_x/AlGaN/GaN metal-insulator semiconductor high electron mobility transistors

Effect of alpha-particle irradiation dose on SiN_x/AlGaN/GaN metal–insulator semiconductor high electron mobility transistors

Effect of adding an insulator between metal and semiconductor layers on contact resistance

Three-wire method to characterize the thermoelectric properties of one-dimensional materials

Improvement of Ohmic contacts on Ga₂O₃ through use of ITO-interlayers

Simulation and characterization of short-channel organic thin-film transistors fabricated using ink-jet printing and an imprint process

Effect of oxide traps on channel transport characteristics in graphene field effect transistors

Multifield sub-5 nm overlay in imprint lithography

Aluminum-based contacts for use in GaSb-based diode lasers

Mask registration and lithography platform portability for nitride fin-based field effect transistors prototyping

Device characteristics and performance estimation of nearly lattice-matched InAlN/AlGaN heterostructure field-effect transistors

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only