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Journal Articles

One-dimensional simulation of Couette–Poiseuille flow with variable cross section for the full range of gas rarefaction

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Timo Jünemann, Andreas Brümmer
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 38, 044201 (2020)
https://doi.org/10.1116/6.0000207
Published: June 2020
View article titled, One-dimensional simulation of Couette–Poiseuille flow with variable cross section for the full range of gas rarefaction
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Journal Articles

Direct metal etch of ruthenium for advanced interconnect

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Sara Paolillo, Danny Wan, Frédéric Lazzarino, Nouredine Rassoul, Daniele Piumi, Zsolt Tőkei
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 03E103 (2018)
https://doi.org/10.1116/1.5022283
Published: May 2018
View article titled, Direct metal etch of ruthenium for advanced interconnect
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Journal Articles

Nitride etching with hydrofluorocarbons III: Comparison of C4H9F and CH3F for low-k′ nitride spacer etch processes

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Hiroyuki Miyazoe, Nathan Marchack, Robert L. Bruce, Yu Zhu, Masahiro Nakamura, Eric Miller, Sivananda Kanakasabapathy, Takefumi Suzuki, Azumi Ito, Hirokazu Matsumoto, Sebastian U. Engelmann, Eric A. Joseph
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 032201 (2018)
https://doi.org/10.1116/1.5019016
Published: April 2018
View article titled, Nitride etching with hydrofluorocarbons III: Comparison of C4H9F and CH3F for low-k′ nitride spacer etch processes
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Journal Articles

Controlling defects in fine-grained sputtered nickel catalyst for graphene growth

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Eugene Zakar, A. Glen Birdwell, Kevin Hauri, Richard X. Fu, Cheng Tan, Madan Dubey
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 021803 (2018)
https://doi.org/10.1116/1.4998441
Published: March 2018
View article titled, Controlling defects in fine-grained sputtered nickel catalyst for graphene growth
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Journal Articles

Bacteria inactivation by atmospheric pressure plasma jet treatment

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Matteo Pedroni, Stefano Morandi, Tiziana Silvetti, Anna Cremona, Giuseppe Gittini, Antonio Nardone, Fabrizio Pallotta, Milena Brasca, Espedito Vassallo
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 01A107 (2018)
https://doi.org/10.1116/1.4995546
Published: December 2017
View article titled, Bacteria inactivation by atmospheric pressure plasma jet treatment
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Journal Articles

Analytical study of polymer deposition distribution for two-dimensional trench sidewall in low-k fluorocarbon plasma etching process

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Sun-Woo Kim, Hwan-Jun Zang, June Park, Gwang-Sik Kim, Hyun-Yong Yu, Minwoo Ha, Kyungbo Ko, Sang Soo Park, Choon Hwan Kim
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 011802 (2018)
https://doi.org/10.1116/1.4996641
Published: December 2017
View article titled, Analytical study of polymer deposition distribution for two-dimensional trench sidewall in low-k fluorocarbon plasma etching process
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Journal Articles

Chromium oxide as a hard mask material better than metallic chromium

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Ferhat Aydinoglu, Faycal Saffih, Ripon Kumar Dey, Bo Cui
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 06GB01 (2017)
https://doi.org/10.1116/1.4998480
Published: October 2017
View article titled, Chromium oxide as a hard mask material better than metallic chromium
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Journal Articles

DC sputtering of highly c-axis AlN films on top of 3C-SiC (111)-on-Si (111) substrates under various N2 concentrations

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Abid Iqbal, Glenn Walker, Leonie Hold, Alanna Fernandes, Alan Iacopi, Faisal Mohd-Yasin
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 06GH01 (2017)
https://doi.org/10.1116/1.4991748
Published: September 2017
View article titled, DC sputtering of highly c-axis AlN films on top of 3C-SiC (111)-on-Si (111) substrates under various N2 concentrations
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Journal Articles

Bottom profile degradation mechanism in high aspect ratio feature etching based on pattern transfer observation

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Nobuyuki Negishi, Masatoshi Miyake, Ken'etsu Yokogawa, Masatoshi Oyama, Tadamitsu Kanekiyo, Masaru Izawa
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 051205 (2017)
https://doi.org/10.1116/1.4998943
Published: August 2017
View article titled, Bottom profile degradation mechanism in high aspect ratio feature etching based on pattern transfer observation
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Journal Articles

High-etch rate processes for performing deep, highly anisotropic etches in silicon carbide using inductively coupled plasma etching

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Mehmet Ozgur, Michael Huff
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 042003 (2017)
https://doi.org/10.1116/1.4994785
Published: July 2017
View article titled, High-etch rate processes for performing deep, highly anisotropic etches in silicon carbide using inductively coupled plasma etching
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Journal Articles

Incorporation of dopants in epitaxial SiC layers grown with fluorinated CVD chemistry

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Pontus Stenberg, Erik Janzén, Henrik Pedersen
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 031201 (2017)
https://doi.org/10.1116/1.4979279
Published: March 2017
View article titled, Incorporation of dopants in epitaxial SiC layers grown with fluorinated CVD chemistry
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Journal Articles

Sub-10 nm plasma nanopatterning of InGaAs with nearly vertical and smooth sidewalls for advanced n-fin field effect transistors on silicon

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Fares Chouchane, Bassem Salem, Guillaume Gay, Mickael Martin, Erwine Pargon, Franck Bassani, Sandrine Arnaud, Sylvain David, Reynald Alcotte, Sébastien Labau, Jérémy Moeyart, Thierry Baron
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 021206 (2017)
https://doi.org/10.1116/1.4975796
Published: February 2017
View article titled, Sub-10 nm plasma nanopatterning of InGaAs with nearly vertical and smooth sidewalls for advanced n-fin field effect transistors on silicon
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Journal Articles

Oxidation and oxidative vapor-phase etching of few-layer MoS2

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Timothy N. Walter, Frances Kwok, Hamed Simchi, Haila M. Aldosari, Suzanne E. Mohney
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 021203 (2017)
https://doi.org/10.1116/1.4975144
Published: January 2017
View article titled, Oxidation and oxidative vapor-phase etching of few-layer MoS2
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Includes: Supplementary data
Journal Articles

Influence of SiH4 and pressure on PECVD preparation of silicon films with subwavelength structures

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William W. Hernández-Montero, Carlos Zúñiga-Islas, Adrián Itzmoyotl-Toxqui, Joel Molina-Reyes, Laura E. Serrano-De la Rosa
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 011204 (2017)
https://doi.org/10.1116/1.4973303
Published: December 2016
View article titled, Influence of SiH4 and pressure on PECVD preparation of silicon films with subwavelength structures
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Journal Articles

Effect of droplet size, droplet placement, and gas dissolution on throughput and defect rate in UV nanoimprint lithography

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Akhilesh Jain, Andrew Spann, Roger T. Bonnecaze
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 011602 (2017)
https://doi.org/10.1116/1.4971771
Published: December 2016
View article titled, Effect of droplet size, droplet placement, and gas dissolution on throughput and defect rate in UV nanoimprint lithography
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Journal Articles

Mechanisms of silicon damage during N2/H2 organic etching for fin field-effect-transistor CMOS

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Tamotsu Morimoto, Hiroto Ohtake, Tomiko Wanifuchi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 051811 (2015)
https://doi.org/10.1116/1.4930244
Published: September 2015
View article titled, Mechanisms of silicon damage during N2/H2 organic etching for fin field-effect-transistor CMOS
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Journal Articles

Protection of extreme ultraviolet lithography masks. I. Thermophoretic protection factors at low pressure for diffusing nanoscale particles

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Leonard E. Klebanoff, Anthony S. Geller, John R. Torczynski, Michael A. Gallis, Daniel J. Rader, Frank C. Chilese, Rudy F. Garcia, Gil Delgado
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 031601 (2015)
https://doi.org/10.1116/1.4916210
Published: March 2015
View article titled, Protection of extreme ultraviolet lithography masks. I. Thermophoretic protection factors at low pressure for diffusing nanoscale particles
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Journal Articles

Etching of Ag and Au films in CH4-based plasmas at low temperature

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Tae-Seop Choi, Dennis W. Hess
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 012202 (2015)
https://doi.org/10.1116/1.4902332
Published: November 2014
View article titled, Etching of Ag and Au films in CH4-based plasmas at low temperature
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Journal Articles

Effects of MoS2 thickness and air humidity on transport characteristics of plasma-doped MoS2 field-effect transistors

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Mikai Chen, Sungjin Wi, Hongsuk Nam, Greg Priessnitz, Xiaogan Liang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 06FF02 (2014)
https://doi.org/10.1116/1.4897133
Published: October 2014
View article titled, Effects of MoS2 thickness and air humidity on transport characteristics of plasma-doped MoS2 field-effect transistors
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Journal Articles

Fabrication of sub-200 nm AlN-GaN-AlN waveguide with cleaved end facet

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Yijing Chen, Vivek Krishnamurthy, Yicheng Lai, Yi Luo, Zhibiao Hao, Lai Wang, Seng-Tiong Ho
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 041207 (2014)
https://doi.org/10.1116/1.4890487
Published: July 2014
View article titled, Fabrication of sub-200 nm AlN-GaN-AlN waveguide with cleaved end facet
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