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Journal Articles

Negative bias temperature instability threshold voltage shift turnaround in SiGe channel MOSFETs

Kenneth E. Kambour, Camron Kouhestani, Patrick McMarr, Harold L. Hughes, Daniel R. Steinke, Roderick A. B. Devine
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 022201 (2015)
https://doi.org/10.1116/1.4907416
Published: February 2015
View articletitled, Negative bias temperature instability threshold voltage shift turnaround in SiGe channel MOSFETs
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Journal Articles

Direct evidence for interface state annealing in the negative bias temperature instability response

Duc D. Nguyen, Camron Kouhestani, Kenneth E. Kambour, Roderick A. B. Devine
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 011205 (2014)
https://doi.org/10.1116/1.4837436
Published: December 2013
View articletitled, Direct evidence for interface state annealing in the negative bias temperature instability response
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Journal Articles

Insight into the multicomponent nature of negative bias temperature instability

Duc D. Nguyen, Camron Kouhestani, Kenneth E. Kambour, Roderick A. B. Devine
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 31, 030601 (2013)
https://doi.org/10.1116/1.4796115
Published: March 2013
View articletitled, Insight into the multicomponent nature of negative bias temperature instability
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Journal Articles

Impact of halo implant on the hot carrier reliability of germanium p -channel metal-oxide-semiconductor field-effect transitors

J. Franco, G. Eneman, B. Kaczer, J. Mitard, B. De Jaeger, G. Groeseneken
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 01A804 (2011)
https://doi.org/10.1116/1.3520647
Published: January 2011
View articletitled, Impact of halo implant on the hot carrier reliability of germanium p -channel metal-oxide-semiconductor field-effect transitors
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Journal Articles

Multiphonon hole trapping from first principles

F. Schanovsky, W. Gös, T. Grasser
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 01A201 (2011)
https://doi.org/10.1116/1.3533269
Published: January 2011
View articletitled, Multiphonon hole trapping from first principles
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Journal Articles

Impact of nitridation on recoverable and permanent negative bias temperature instability degradation in high- k /metal-gate p -type metal oxide semiconductor field effect transistors

M. Aoulaiche, B. Kaczer, Ph. J. Roussel, R. O’Connor, M. Houssa, S. De Gendt, H. E. Maes, G. Groeseneken
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 463–467 (2009)
https://doi.org/10.1116/1.3058740
Published: February 2009
View articletitled, Impact of nitridation on recoverable and permanent negative bias temperature instability degradation in high- k /metal-gate p -type metal oxide semiconductor field effect transistors
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Journal Articles

Ultrathin decoupled plasma nitridation SiON gate dielectrics prepared with various rf powers

Chan-Yuan Hu, Shih-Chih Chen, Jone F. Chen, Shoou-Jinn Chang, Min-Hong Wang, Vita Yeh, Jung-Che Chen
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 25, 1298–1304 (2007)
https://doi.org/10.1116/1.2756545
Published: July 2007
View articletitled, Ultrathin decoupled plasma nitridation SiON gate dielectrics prepared with various rf powers
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