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Journal Articles

Comparison of temperature, current density, and light intensity distributions of nano-resistor patterns for an improved solid state incandescent light emitting device simulation model

Adam Samuel, Yue Kuo
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 052209 (2022)
https://doi.org/10.1116/6.0002074
Published: September 2022
View article titled, Comparison of temperature, current density, and light intensity distributions of nano-resistor patterns for an improved solid state incandescent light emitting device simulation model
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Journal Articles

Molecular dynamics study of silicon atomic layer etching by chlorine gas and argon ions

Joseph R. Vella, David Humbird, David B. Graves
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 023205 (2022)
https://doi.org/10.1116/6.0001681
Published: February 2022
View article titled, Molecular dynamics study of silicon atomic layer etching by chlorine gas and argon ions
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Includes: Supplementary data
Journal Articles

Titanium diffusion in Si/Al2O3/Ti/Au metal oxide semiconductor capacitors

Roberta Hawkins, Anuj Jain, Sohum Kulkarni, Chadwin Young
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 39, 042201 (2021)
https://doi.org/10.1116/6.0001045
Published: June 2021
View article titled, Titanium diffusion in Si/Al<sub>2</sub>O<sub>3</sub>/Ti/Au metal oxide semiconductor capacitors
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Includes: Supplementary data
Journal Articles

Characterization of GeO2 films formed on Ge substrate using high pressure oxidation

Juhyun Bae, Ilsub Chung
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 39, 043201 (2021)
https://doi.org/10.1116/6.0000963
Published: June 2021
View article titled, Characterization of GeO<sub>2</sub> films formed on Ge substrate using high pressure oxidation
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Journal Articles

Fully vertical gallium nitride trench MOSFETs fabricated with metal-free gate first process

Kevin Dannecker, Jens Baringhaus
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 39, 032204 (2021)
https://doi.org/10.1116/6.0000980
Published: April 2021
View article titled, Fully vertical gallium nitride trench MOSFETs fabricated with metal-free gate first process
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Journal Articles

Developing single-layer metal-oxide-semiconductor quantum dots for diagnostic qubits

Yanxue Hong, A. N. Ramanayaka, Ryan Stein, M. D. Stewart, J. M. Pomeroy
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 39, 012204 (2021)
https://doi.org/10.1116/6.0000549
Published: December 2020
View article titled, Developing single-layer metal-oxide-semiconductor quantum dots for diagnostic qubits
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Journal Articles

Gate engineering in metal insulator semiconductor capacitors on native gallium nitride substrates for applications with high lifetime requirements

Kevin Dannecker, Jens Baringhaus
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 39, 012201 (2021)
https://doi.org/10.1116/6.0000440
Published: December 2020
View article titled, Gate engineering in metal insulator semiconductor capacitors on native gallium nitride substrates for applications with high lifetime requirements
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Journal Articles

Experimental reliability study of cumulative damage models on state-of-the-art semiconductor technologies for step-stress tests and mission profile stresses

A. Hirler, J. Biba, D. Lipp, H. Lochner, M. Siddabathula, S. Simon, T. Sulima, M. Wiatr, W. Hansch
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 38, 064001 (2020)
https://doi.org/10.1116/6.0000504
Published: September 2020
View article titled, Experimental reliability study of cumulative damage models on state-of-the-art semiconductor technologies for step-stress tests and mission profile stresses
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Journal Articles

Anomalous minority carrier behavior induced by chemical surface passivation solution in p-type GaSb metal–oxide–semiconductor capacitors on Si substrates

Shun Sasaki, Katherine Dropiewski, Shailesh Madisetti, Vadim Tokranov, Michael Yakimov, Serge Oktyabrsky
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 38, 052204 (2020)
https://doi.org/10.1116/6.0000169
Published: August 2020
View article titled, Anomalous minority carrier behavior induced by chemical surface passivation solution in p-type GaSb metal–oxide–semiconductor capacitors on Si substrates
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Journal Articles

Efficient methodology for estimation of metal effective work function, interface trap, and fixed oxide charges in metal-oxide-semiconductor capacitors with dual layer high - κ /SiO2 dielectric

Piyas Samanta
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 37, 062204 (2019)
https://doi.org/10.1116/1.5120268
Published: November 2019
View article titled, Efficient methodology for estimation of metal effective work function, interface trap, and fixed oxide charges in metal-oxide-semiconductor capacitors with dual layer high - κ /SiO<sub>2</sub> dielectric
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Journal Articles

Effects of slow highly charged ion irradiation on metal oxide semiconductor capacitors

Daniel B. Cutshall, Dhruva D. Kulkarni, James E. Harriss, Daniel A. Field, Chad E. Sosolik, William R. Harrell
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 052901 (2018)
https://doi.org/10.1116/1.5028149
Published: July 2018
View article titled, Effects of slow highly charged ion irradiation on metal oxide semiconductor capacitors
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Journal Articles

Fabrication of radiation hardened SOI with embedded Si nanocrystal by ion-cut technique

Yongwei Chang, Shi Cheng, Lihua Dai, Da Chen, Zhongying Xue, Yemin Dong, Xing Wei, Xi Wang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 020603 (2017)
https://doi.org/10.1116/1.4977577
Published: March 2017
View article titled, Fabrication of radiation hardened SOI with embedded Si nanocrystal by ion-cut technique
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Journal Articles

Effect of excess hafnium on HfO2 crystallization temperature and leakage current behavior of HfO2/Si metal-oxide-semiconductor devices

Debaleen Biswas, Manavendra Narayan Singh, Anil Kumar Sinha, Satyaranjan Bhattacharyya, Supratic Chakraborty
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 022201 (2016)
https://doi.org/10.1116/1.4941247
Published: February 2016
View article titled, Effect of excess hafnium on HfO<sub>2</sub> crystallization temperature and leakage current behavior of HfO<sub>2</sub>/Si metal-oxide-semiconductor devices
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Journal Articles

Optimization of annealing temperature for high-κ-based gate oxides using differential scanning calorimetry

Debaleen Biswas, Anil Kumar Sinha, Supratic Chakraborty
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 052205 (2015)
https://doi.org/10.1116/1.4929442
Published: August 2015
View article titled, Optimization of annealing temperature for high-<em>κ</em>-based gate oxides using differential scanning calorimetry
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Journal Articles

Passivation of oxide traps in gallium arsenide (semiconductor) metal-oxide-semiconductor capacitor with high-k dielectric by using fluorine incorporation

Lining Liu, Hoi Wai Choi, Pui To Lai, Jingping Xu
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 050601 (2015)
https://doi.org/10.1116/1.4927483
Published: July 2015
View article titled, Passivation of oxide traps in gallium arsenide (semiconductor) metal-oxide-semiconductor capacitor with high-k dielectric by using fluorine incorporation
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Journal Articles

Hole trap distribution on 2 MeV electron irradiated high-k dielectrics

Salvador Dueñas, Helena Castán, Héctor García, Lisa María Fuentes, Luis Bailón, Francesca Campabadal, Joan Marc Rafí, Mireia Bargalló González, Kenitirou Takakura, Isao Tsunoda, Masashi Yoneoka
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 032201 (2015)
https://doi.org/10.1116/1.4915617
Published: March 2015
View article titled, Hole trap distribution on 2 MeV electron irradiated high-k dielectrics
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Journal Articles

Oxide structure-dependent interfacial layer defects of HfAlO/SiO2/Si stack analyzed by conductance method

Yi Ming Ding, Durgamadhab Misra
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 021203 (2015)
https://doi.org/10.1116/1.4913280
Published: February 2015
View article titled, Oxide structure-dependent interfacial layer defects of HfAlO/SiO<sub>2</sub>/Si stack analyzed by conductance method
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Journal Articles

Active-matrix Spindt-type field emitter array with faster response time for image sensor with high-gain avalanche rushing amorphous photoconductor target

Yuki Honda, Masakazu Nanba, Kazunori Miyakawa, Misao Kubota, Norifumi Egami
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 012205 (2015)
https://doi.org/10.1116/1.4906103
Published: January 2015
View article titled, Active-matrix Spindt-type field emitter array with faster response time for image sensor with high-gain avalanche rushing amorphous photoconductor target
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Journal Articles

Growth of high-density Ir nanocrystals by atomic layer deposition for nonvolatile nanocrystal memory applications

Xiao-Jie Liu, Lin Zhu, Xue-Fei Li, Zheng-Yi Cao, Ai-Dong Li, Di Wu
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 042201 (2014)
https://doi.org/10.1116/1.4878942
Published: May 2014
View article titled, Growth of high-density Ir nanocrystals by atomic layer deposition for nonvolatile nanocrystal memory applications
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Journal Articles

Influences of low-temperature postdeposition annealing on memory properties of Al/Al2O3/Al-rich Al-O/SiO2/p-Si charge trapping flash memory structures

Shinya Ozaki, Takashi Kato, Takeshi Kawae, Akiharu Morimoto
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 031213 (2014)
https://doi.org/10.1116/1.4876135
Published: May 2014
View article titled, Influences of low-temperature postdeposition annealing on memory properties of Al/Al<sub>2</sub>O<sub>3</sub>/Al-rich Al-O/SiO<sub>2</sub>/p-Si charge trapping flash memory structures
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