1-20 of 3589
Semiconductor devices
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Bias stability enhancement of metal/Al2O3/AlN/GaN capacitors by high-temperature plasma-enhanced atomic layer deposition of thin AlN interlayer

Atsushi Hiraiwa, Kiyotaka Horikawa, Hiroshi Kawarada
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 43, 032205 (2025)
https://doi.org/10.1116/6.0004310
Published: April 2025
View articletitled, Bias stability enhancement of metal/Al2O3/AlN/GaN capacitors by high-temperature plasma-enhanced atomic layer deposition of thin AlN interlayer
Open the PDF for Bias stability enhancement of metal/Al2O3/AlN/GaN capacitors by high-temperature plasma-enhanced atomic layer deposition of thin AlN interlayer in another window
Journal Articles

Controlled preparation of tungsten diselenide thin films via chemical vapor deposition

Pingfan Ning, Xuerong Li, Feifei Lan, Xiangyu Li, Yingmin Wang, Hongjuan Cheng, Yujian Wang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 43, 030601 (2025)
https://doi.org/10.1116/6.0004352
Published: April 2025
View articletitled, Controlled preparation of tungsten diselenide thin films via chemical vapor deposition
Open the PDF for Controlled preparation of tungsten diselenide thin films via chemical vapor deposition in another window
Journal Articles

Ultrathin tantalum films for Schottky contacts on 4H silicon carbide

Renato M. Beraldo, Rodrigo R. César, Melissa Mederos, Jacilene M. Medeiros, Andrei Alaferdov, Érick A. Santos, Ednan Joanni, Thebano E. A. Santos, Ricardo C. Teixeira, Marcos V. Puydinger dos Santos, Renato A. Minamisawa, José Alexandre Diniz
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 43, 033202 (2025)
https://doi.org/10.1116/6.0004313
Published: April 2025
View articletitled, Ultrathin tantalum films for Schottky contacts on 4H silicon carbide
Open the PDF for Ultrathin tantalum films for Schottky contacts on 4H silicon carbide in another window
Journal Articles

Synergistic regulation of device performance by structural parameters of vertical side-gate type vacuum channel field emission transistor

Wenhua Tang, Kerun Chen, Jie Li, Zhihua Shen, Xiao Wang, Shengli Wu
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 43, 033201 (2025)
https://doi.org/10.1116/6.0004371
Published: March 2025
View articletitled, Synergistic regulation of device performance by structural parameters of vertical side-gate type vacuum channel field emission transistor
Open the PDF for Synergistic regulation of device performance by structural parameters of vertical side-gate type vacuum channel field emission transistor in another window
Journal Articles

Tracing degradation mechanisms of epitaxially grown GaAsSb on InP by InSb formation at elevated temperatures

Editor’s Pick
Leonid Miroshnik, Brian D. Rummel, Darryl M. Shima, Andrew Li, Ganesh Balakrishnan, Talid Sinno, Sang M. Han
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 43, 022215 (2025)
https://doi.org/10.1116/6.0004324
Published: March 2025
View articletitled, Tracing degradation mechanisms of epitaxially grown GaAsSb on InP by InSb formation at elevated temperatures
Open the PDF for Tracing degradation mechanisms of epitaxially grown GaAsSb on InP by InSb formation at elevated temperatures in another window
Journal Articles

Experimental current-voltage-temperature and thermal sensitivity behaviors of an ideal Schottky barrier diode over a wide temperature range

Hasan Efeoǧlu, Abdulmecit Turut
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 43, 022212 (2025)
https://doi.org/10.1116/6.0004273
Published: March 2025
View articletitled, Experimental current-voltage-temperature and thermal sensitivity behaviors of an ideal Schottky barrier diode over a wide temperature range
Open the PDF for Experimental current-voltage-temperature and thermal sensitivity behaviors of an ideal Schottky barrier diode over a wide temperature range in another window
Journal Articles

Optimal structural design of nanoscale dual-gate air-channel triode via 3D simulation

Zhihua Shen, Qing Cai, Qiaoning Li, Bin Ge, Xiao Wang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 43, 022805 (2025)
https://doi.org/10.1116/6.0004317
Published: February 2025
View articletitled, Optimal structural design of nanoscale dual-gate air-channel triode via 3D simulation
Open the PDF for Optimal structural design of nanoscale dual-gate air-channel triode via 3D simulation in another window
Journal Articles

Fabrication of microstructures on porous nanolattices

Nayoung Kim, Saurav Mohanty, Vijay Anirudh Premnath, Ethan Flores, Chih-Hao Chang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 43, 022601 (2025)
https://doi.org/10.1116/6.0004054
Published: February 2025
View articletitled, Fabrication of microstructures on porous nanolattices
Open the PDF for Fabrication of microstructures on porous nanolattices in another window
Journal Articles

Exploring SiC CVD growth parameters compatible with remote epitaxy

Daniel J. Pennachio, Jenifer R. Hajzus, Rachael L. Myers-Ward
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 43, 022205 (2025)
https://doi.org/10.1116/6.0004106
Published: February 2025
View articletitled, Exploring SiC CVD growth parameters compatible with remote epitaxy
Open the PDF for Exploring SiC CVD growth parameters compatible with remote epitaxy in another window
Journal Articles

Enhancement of performance and reliability in MOSFETs via high-pressure microwave annealing

Geonhyeong Kang, Hunbeom Shin, Seungyeob Kim, Lingwei Zhang, Giuk Kim, Sujeong Lee, Yunseok Nam, Chaeheon Kim, Hoon Kim, Jinho Ahn, Sanghun Jeon
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 43, 012206 (2025)
https://doi.org/10.1116/6.0004086
Published: January 2025
View articletitled, Enhancement of performance and reliability in MOSFETs via high-pressure microwave annealing
Open the PDF for Enhancement of performance and reliability in MOSFETs via high-pressure microwave annealing in another window
Journal Articles

Cost-effective fabrication of RF AlGaN/GaN HEMTs on surface activated bonding-bonded SiC-SiC substrate

Guanjun Jing, Xiangjie Xing, Dongguo Zhang, Fengwen Mu, Sen Huang, Ke Wei, Qimeng Jiang, Xinhua Wang, Xinyu Liu
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 43, 012205 (2025)
https://doi.org/10.1116/6.0004066
Published: January 2025
View articletitled, Cost-effective fabrication of RF AlGaN/GaN HEMTs on surface activated bonding-bonded SiC-SiC substrate
Open the PDF for Cost-effective fabrication of RF AlGaN/GaN HEMTs on surface activated bonding-bonded SiC-SiC substrate in another window
Journal Articles

Chaos-enhanced self-adaptive particle swarm optimization with simulated annealing for digital lithography mask optimization

Shengzhou Huang, Dongjie Wu, Yuanzhuo Tang, Bowen Ren, Jiani Pan, Zhaowei Tian, Yongkang Shao, Siwen He
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 43, 012601 (2025)
https://doi.org/10.1116/6.0004107
Published: January 2025
View articletitled, Chaos-enhanced self-adaptive particle swarm optimization with simulated annealing for digital lithography mask optimization
Open the PDF for Chaos-enhanced self-adaptive particle swarm optimization with simulated annealing for digital lithography mask optimization in another window
Journal Articles

Machine learning driven measurement of high-aspect-ratio nanostructures using Mueller matrix spectroscopic ellipsometry

Editor’s Pick
Shiva Mudide, Nick Keller, G. Andrew Antonelli, Geraldina Cruz, Julia Hart, Alexander R. Bruccoleri, Ralf K. Heilmann, Mark L. Schattenburg
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 43, 012801 (2025)
https://doi.org/10.1116/6.0004058
Published: January 2025
View articletitled, Machine learning driven measurement of high-aspect-ratio nanostructures using Mueller matrix spectroscopic ellipsometry
Open the PDF for Machine learning driven measurement of high-aspect-ratio nanostructures using Mueller matrix spectroscopic ellipsometry in another window
Journal Articles

Tapered quantum cascade lasers with isolated channel emitting at 9 μm

Chenyang Wan, Yuzhe Lin, Yuan Ma, Lijun Ge, Zixian Wang, Fengxin Dong, Xuyan Zhou, Jinchuan Zhang, Fengqi Liu, Wanhua Zheng
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 43, 012202 (2025)
https://doi.org/10.1116/6.0004059
Published: January 2025
View articletitled, Tapered quantum cascade lasers with isolated channel emitting at 9 μm
Open the PDF for Tapered quantum cascade lasers with isolated channel emitting at 9 μm in another window
Journal Articles

Electrochemically fabricated ultrafine nickel masks for the fabrication of MoS2-based devices

Jianwen Zhong, Zhao Sun, Han Li, Zhuofei Gan, Chuying Sun, Yi Wan, Lain-Jong Li, Wen-Di Li
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 062213 (2024)
https://doi.org/10.1116/6.0004053
Published: December 2024
View articletitled, Electrochemically fabricated ultrafine nickel masks for the fabrication of MoS2-based devices
Open the PDF for Electrochemically fabricated ultrafine nickel masks for the fabrication of MoS2-based devices in another window
Journal Articles

Control mechanism of the back insulated-gate in vacuum nano-electronics

Qingyu Bian, Ping Chen, Feng Liang, Rui Zhang, Degang Zhao, Chunlai Xue
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 063211 (2024)
https://doi.org/10.1116/6.0004160
Published: December 2024
View articletitled, Control mechanism of the back insulated-gate in vacuum nano-electronics
Open the PDF for Control mechanism of the back insulated-gate in vacuum nano-electronics in another window
Journal Articles

Self-aligned fabrication of vertical, fin-based structures

Editor’s Pick
Joshua Perozek, Tomás Palacios
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 063209 (2024)
https://doi.org/10.1116/6.0004047
Published: December 2024
View articletitled, Self-aligned fabrication of vertical, fin-based structures
Open the PDF for Self-aligned fabrication of vertical, fin-based structures in another window
Journal Articles

Overcoming challenges in single electron charge detection of nanoscale dipoles

Mohammad Istiaque Rahaman, R. A. McManus, D. J. Noronha, G. P. Szakmany, A. O. Orlov, G. L. Snider
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 063208 (2024)
https://doi.org/10.1116/6.0004052
Published: December 2024
View articletitled, Overcoming challenges in single electron charge detection of nanoscale dipoles
Open the PDF for Overcoming challenges in single electron charge detection of nanoscale dipoles in another window
Journal Articles

Observation of low-resistance Al and Ni p-type ohmic contacts to dilute GeC and GeCSn alloys

Jibesh K. Saha, Saif A. A. Taqy, Pallab K. Sarkar, Imteaz Rahaman, Augustus W. Arbogast, Tuhin Dey, Andrei Dolocan, Md. Reaz Rahman Munna, Khorshed Alam, Daniel Wasserman, Seth R. Bank, Mark A. Wistey
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 062211 (2024)
https://doi.org/10.1116/6.0003739
Published: December 2024
View articletitled, Observation of low-resistance Al and Ni p-type ohmic contacts to dilute GeC and GeCSn alloys
Open the PDF for Observation of low-resistance Al and Ni p-type ohmic contacts to dilute GeC and GeCSn alloys in another window
Journal Articles

Fabrication of silicon W and G center embedded light-emitting diodes for electroluminescence

Editor’s Pick
Nikki Ebadollahi, Pradeep N. Namboodiri, Christian Pederson, Vijin K. Veetil, Marcelo I. Davanco, Kartik A. Srinivasan, Aaron M. Katzenmeyer, Matthew Pelton, Joshua M. Pomeroy
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 062208 (2024)
https://doi.org/10.1116/6.0004055
Published: November 2024
View articletitled, Fabrication of silicon W and G center embedded light-emitting diodes for electroluminescence
Open the PDF for Fabrication of silicon W and G center embedded light-emitting diodes for electroluminescence in another window