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Journal Articles

Realization of suspended silicon-based structures using a smart three-dimensional etching method

Hamid Mazraati, Milad Gharooni, Sara Darbari, Shams Mohajerzadeh, Fatemeh Salehi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 062002 (2014)
https://doi.org/10.1116/1.4898576
Published: October 2014
View article titled, Realization of suspended silicon-based structures using a smart three-dimensional etching method
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Journal Articles

Optimization of Ohmic metal contacts for advanced GaAs-based CMOS device

W. H. Chang, T. H. Chiang, T. D. Lin, Y. H. Chen, K. H. Wu, T. S. Huang, M. Hong, J. Kwo
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 30, 02B123 (2012)
https://doi.org/10.1116/1.3687418
Published: February 2012
View article titled, Optimization of Ohmic metal contacts for advanced GaAs-based CMOS device
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Journal Articles

Fabrication of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors

C. F. Lo, F. Ren, C. Y. Chang, S. J. Pearton, S.-H. Chen, C.-M. Chang, S.-Y. Wang, J.-I. Chyi, I. I. Kravchenko
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 031205 (2011)
https://doi.org/10.1116/1.3589808
Published: May 2011
View article titled, Fabrication of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors
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Journal Articles

Effect of source/drain-extension dopant species on device performance of embedded SiGe strained p -metal oxide semiconductor field effect transistors using millisecond annealing

Ralf Illgen, Stefan Flachowsky, Tom Herrmann, Wilfried Klix, Roland Stenzel, Thomas Feudel, Jan Höntschel, Manfred Horstmann
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, C1I12–C1I16 (2010)
https://doi.org/10.1116/1.3244578
Published: March 2010
View article titled, Effect of source/drain-extension dopant species on device performance of embedded SiGe strained p -metal oxide semiconductor field effect transistors using millisecond annealing
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Journal Articles

Detailed simulation study of embedded SiGe and Si:C source/drain stressors in nanoscaled silicon on insulator metal oxide semiconductor field effect transistors

Stefan Flachowsky, Ralf Illgen, Tom Herrmann, Wilfried Klix, Roland Stenzel, Ina Ostermay, Andreas Naumann, Andy Wei, Jan Höntschel, Manfred Horstmann
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, C1G12–C1G17 (2010)
https://doi.org/10.1116/1.3258631
Published: March 2010
View article titled, Detailed simulation study of embedded SiGe and Si:C source/drain stressors in nanoscaled silicon on insulator metal oxide semiconductor field effect transistors
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Journal Articles

Proton irradiation effects on Sb-based heterojunction bipolar transistors

C. F. Lo, H.-Y. Kim, J. Kim, Shu-Han Chen, Sheng-Yu Wang, Jen-Inn Chyi, B. Y. Chou, K. H. Chen, Y. L. Wang, C. Y. Chang, S. J. Pearton, L. I. Kravchenko, S. Jang, F. Ren
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, L33–L37 (2009)
https://doi.org/10.1116/1.3246405
Published: October 2009
View article titled, Proton irradiation effects on Sb-based heterojunction bipolar transistors
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Journal Articles

Transparent dual-gate InGaZnO thin film transistors: OR gate operation

Wantae Lim, E. A. Douglas, Jaewon Lee, Junghun Jang, V. Craciun, D. P. Norton, S. J. Pearton, F. Ren, S. Y. Son, J. H. Yuh, H. Shen, W. Chang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 2128–2131 (2009)
https://doi.org/10.1116/1.3196787
Published: August 2009
View article titled, Transparent dual-gate InGaZnO thin film transistors: <sc>OR</sc> gate operation
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Journal Articles

Stable room temperature deposited amorphous In Ga Zn O 4 thin film transistors

Wantae Lim, S.-H. Kim, Yu-Lin Wang, J. W. Lee, D. P. Norton, S. J. Pearton, F. Ren, I. I. Kravchenko
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 959–962 (2008)
https://doi.org/10.1116/1.2917075
Published: May 2008
View article titled, Stable room temperature deposited amorphous In Ga Zn O 4 thin film transistors
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Journal Articles

Scalable gate first process for silicon on insulator metal oxide semiconductor field effect transistors with epitaxial high- k dielectrics

Heinrich D. B. Gottlob, Thomas Mollenhauer, Thorsten Wahlbrink, Mathias Schmidt, Tim Echtermeyer, Johnson K. Efavi, Max C. Lemme, Heinrich Kurz
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 24, 710–714 (2006)
https://doi.org/10.1116/1.2180256
Published: March 2006
View article titled, Scalable gate first process for silicon on insulator metal oxide semiconductor field effect transistors with epitaxial high- k dielectrics
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Journal Articles

Technology CAD: Device simulation and characterization

T. Grasser, S. Selberherr
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 20, 407–413 (2002)
https://doi.org/10.1116/1.1445162
Published: January 2002
View article titled, Technology CAD: Device simulation and characterization
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Journal Articles

Modeling of ultrashallow spreading resistance probe calibration curves

R. J. Hillard, S. M. Ramey, C. Win Ye
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 18, 389–392 (2000)
https://doi.org/10.1116/1.591201
Published: January 2000
View article titled, Modeling of ultrashallow spreading resistance probe calibration curves
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Journal Articles

Electron‐beam lithography for the fabrication of air‐bridged, submicron Schottky collectors

R. E. Muller, S. C. Martin, R. P. Smith, S. A. Allen, M. Reddy, U. Bhattacharya, M. J. W. Rodwell
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 12, 3668–3672 (1994)
https://doi.org/10.1116/1.587636
Published: November 1994
View article titled, Electron‐beam lithography for the fabrication of air‐bridged, submicron Schottky collectors
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