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Journal Articles

Device feasibility and performance improvement methodologies for thin film transistors using In-Ga-Sn-O channels prepared by atomic-layer deposition

Editor’s Pick
Shin-Ho Noh, Hyo-Eun Kim, Young-Ha Kwon, Nak-Jin Seong, Kyu-Jeong Choi, Sung-Min Yoon
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 040602 (2022)
https://doi.org/10.1116/6.0001945
Published: June 2022
View article titled, Device feasibility and performance improvement methodologies for thin film transistors using In-Ga-Sn-O channels prepared by atomic-layer deposition
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Journal Articles

Electrical characterization of gate stack charge traps in floating body gate-all-around field-effect-transistors

Manh-Cuong Nguyen, An Hoang-Thuy Nguyen, Jiyong Yim, Anh-Duy Nguyen, Mingyu Kim, Jeonghan Kim, Jongyeon Beak, Rino Choi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 39, 032203 (2021)
https://doi.org/10.1116/6.0000906
Published: April 2021
View article titled, Electrical characterization of gate stack charge traps in floating body gate-all-around field-effect-transistors
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Journal Articles

Developing single-layer metal-oxide-semiconductor quantum dots for diagnostic qubits

Yanxue Hong, A. N. Ramanayaka, Ryan Stein, M. D. Stewart, J. M. Pomeroy
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 39, 012204 (2021)
https://doi.org/10.1116/6.0000549
Published: December 2020
View article titled, Developing single-layer metal-oxide-semiconductor quantum dots for diagnostic qubits
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Journal Articles

Efficient methodology for estimation of metal effective work function, interface trap, and fixed oxide charges in metal-oxide-semiconductor capacitors with dual layer high - κ /SiO2 dielectric

Piyas Samanta
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 37, 062204 (2019)
https://doi.org/10.1116/1.5120268
Published: November 2019
View article titled, Efficient methodology for estimation of metal effective work function, interface trap, and fixed oxide charges in metal-oxide-semiconductor capacitors with dual layer high - κ /SiO<sub>2</sub> dielectric
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Journal Articles

Determination of border/bulk traps parameters based on (C-G-V) admittance measurements

Andrzej Mazurak, Jakub Jasin´ski, Bogdan Majkusiak
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 37, 032904 (2019)
https://doi.org/10.1116/1.5060674
Published: May 2019
View article titled, Determination of border/bulk traps parameters based on (<em>C</em>-<em>G</em>-<em>V</em>) admittance measurements
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Includes: Supplementary data
Journal Articles

Determination of physical mechanism responsible for the capacitance-voltage weak inversion “hump” phenomenon in n-InGaAs based metal-oxide-semiconductor gate stacks

Igor Krylov
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 37, 031202 (2019)
https://doi.org/10.1116/1.5085065
Published: April 2019
View article titled, Determination of physical mechanism responsible for the capacitance-voltage weak inversion “hump” phenomenon in n-InGaAs based metal-oxide-semiconductor gate stacks
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Journal Articles

Flexible vertical-channel thin-film transistors using In-Ga-Zn-O active channel and polyimide spacer on poly(ethylene naphthalate) substrate

Hyeong-Rae Kim, Ji-Hee Yang, Gi-Heon Kim, Sung-Min Yoon
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 37, 010602 (2019)
https://doi.org/10.1116/1.5082898
Published: January 2019
View article titled, Flexible vertical-channel thin-film transistors using In-Ga-Zn-O active channel and polyimide spacer on poly(ethylene naphthalate) substrate
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Journal Articles

Germanium out diffusion in SiGe-based HfO2 gate stacks

Eugenie Martinez, Emmanuel Nolot, Jean-Paul Barnes, Yann Mazel, Nicolas Bernier, Raja Muthinti, Hemanth Jagannathan, Choonghyun Lee, Narciso Gambacorti
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 042902 (2018)
https://doi.org/10.1116/1.5027072
Published: July 2018
View article titled, Germanium out diffusion in SiGe-based HfO<sub>2</sub> gate stacks
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Journal Articles

Monolithic integration of patterned BaTiO3 thin films on Ge wafers

Editor’s Pick
Patrick Ponath, Agham Posadas, Michael Schmidt, Anne-Marie Kelleher, Mary White, Dan O'Connell, Paul K. Hurley, Ray Duffy, Alexander A. Demkov
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 031206 (2018)
https://doi.org/10.1116/1.5026109
Published: May 2018
View article titled, Monolithic integration of patterned BaTiO<sub>3</sub> thin films on Ge wafers
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Journal Articles

Interface states reduction in atomic layer deposited TiN/ZrO2/Al2O3/Ge gate stacks

Lakshmi Ganapathi Kolla, Yiming Ding, Durga Misra, Navakanta Bhat
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 021201 (2018)
https://doi.org/10.1116/1.5006789
Published: January 2018
View article titled, Interface states reduction in atomic layer deposited TiN/ZrO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/Ge gate stacks
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Journal Articles

Fabrication and comparative study of DC and low frequency noise characterization of GaN/AlGaN based MOS-HEMT and HEMT

Md Rezaul Hasan, Abhishek Motayed, Md Shamiul Fahad, Mulpuri V. Rao
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 052202 (2017)
https://doi.org/10.1116/1.4998937
Published: August 2017
View article titled, Fabrication and comparative study of DC and low frequency noise characterization of GaN/AlGaN based MOS-HEMT and HEMT
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Journal Articles

Impact of low thermal processes on reliability of high-k/metal gate stacks

Artemisia Tsiara, Xavier Garros, Cao-Minh Vincent Lu, Claire Fenouillet-Béranger, Gerard Ghibaudo
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 01A114 (2017)
https://doi.org/10.1116/1.4973905
Published: January 2017
View article titled, Impact of low thermal processes on reliability of high-k/metal gate stacks
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Journal Articles

Applications of clustering model to bimodal distributions for dielectric breakdown

Ernest Y. Wu, Ronald Bolam, Ronald Filippi, James H. Stathis, Baozhen Li, Andrew Kim
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 01A112 (2017)
https://doi.org/10.1116/1.4972871
Published: January 2017
View article titled, Applications of clustering model to bimodal distributions for dielectric breakdown
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Journal Articles

Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications

Igor Krylov, Boaz Pokroy, Dan Ritter, Moshe Eizenberg
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 011205 (2017)
https://doi.org/10.1116/1.4973300
Published: January 2017
View article titled, Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
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Journal Articles

Mapping of CMOS FET degradation in bias space—Application to dram peripheral devices

B. Kaczer, J. Franco, S. Tyaginov, M. Jech, G. Rzepa, T. Grasser, B. J. O'Sullivan, R. Ritzenhaler, T. Schram, A. Spessot, D. Linten, N. Horiguchi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 01A109 (2017)
https://doi.org/10.1116/1.4972872
Published: December 2016
View article titled, Mapping of CMOS FET degradation in bias space—Application to dram peripheral devices
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Journal Articles

Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/GaN MOS HEMTs: Impact of deposition conditions on interface state density

Milan Ťapajna, Lukáš Válik, Filip Gucmann, Dagmar Gregušová, Karol Fröhlich, Štefan Haščík, Edmund Dobročka, Lajos Tóth, Béla Pécz, Ján Kuzmík
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 01A107 (2017)
https://doi.org/10.1116/1.4972870
Published: December 2016
View article titled, Low-temperature atomic layer deposition-grown Al<sub>2</sub>O<sub>3</sub> gate dielectric for GaN/AlGaN/GaN MOS HEMTs: Impact of deposition conditions on interface state density
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Journal Articles

Ga+ focused ion beam lithography as a viable alternative for multiple fin field effect transistor prototyping

Alessandra Leonhardt, Marcos Vinicius Puydinger dos Santos, José Alexandre Diniz, Leandro Tiago Manera, Lucas Petersen Barbosa Lima
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 06KA03 (2016)
https://doi.org/10.1116/1.4963879
Published: October 2016
View article titled, Ga<sup>+</sup> focused ion beam lithography as a viable alternative for multiple fin field effect transistor prototyping
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Journal Articles

Electrical characterization of dry and wet processed interface layer in Ge/High-K devices

Y. M. Ding, D. Misra, M. N. Bhuyian, Kandabara Tapily, Robert D. Clark, Steve Consiglio, Cory S. Wajda, Gert J. Leusink
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 021203 (2016)
https://doi.org/10.1116/1.4943559
Published: March 2016
View article titled, Electrical characterization of dry and wet processed interface layer in Ge/High-K devices
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Journal Articles

Interface state density engineering in Hf1-xZrxO2/SiON/Si gate stack

Md Nasir Uddin Bhuyian, Durgamadhab Misra, Kandabara Tapily, Robert D. Clark, Steven Consiglio, Cory S. Wajda, Gert J. Leusink
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 011207 (2016)
https://doi.org/10.1116/1.4937916
Published: December 2015
View article titled, Interface state density engineering in Hf<sub>1-x</sub>Zr<sub>x</sub>O<sub>2</sub>/SiON/Si gate stack
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Journal Articles

Study of the electrical and chemical properties of the multistep deposited and two-step (ultraviolet ozone cum rapid thermal) annealed HfO2 gate stack

Kwang Sing Yew, Diing Shenp Ang, Lei Jun Tang, Jisheng Pan
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 011205 (2016)
https://doi.org/10.1116/1.4936893
Published: December 2015
View article titled, Study of the electrical and chemical properties of the multistep deposited and two-step (ultraviolet ozone cum rapid thermal) annealed HfO<sub>2</sub> gate stack
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