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Journal Articles

Ultrathin tantalum films for Schottky contacts on 4H silicon carbide

Renato M. Beraldo, Rodrigo R. César, Melissa Mederos, Jacilene M. Medeiros, Andrei Alaferdov, Érick A. Santos, Ednan Joanni, Thebano E. A. Santos, Ricardo C. Teixeira, Marcos V. Puydinger dos Santos, Renato A. Minamisawa, José Alexandre Diniz

J. Vac. Sci. Technol. B 43, 033202 (2025)

https://doi.org/10.1116/6.0004313

Published: April 2025

View articletitled, Ultrathin tantalum films for Schottky contacts on 4H silicon carbide

Journal Articles

Planar microcoil arrays for in vitro cellular-level micromagnetic activation of neurons

Renata Saha, Onri J. Benally, Sadegh Faramarzi, Robert Bloom, Kai Wu, Denis Tonini, Maple Shiao, Susan A. Keirstead, Walter C. Low, Theoden I. Netoff, Jian-Ping Wang

J. Vac. Sci. Technol. B 42, 033001 (2024)

https://doi.org/10.1116/6.0003362

Published: April 2024

View articletitled, Planar microcoil arrays for in vitro cellular-level micromagnetic activation of neurons

Includes: Supplementary data

Journal Articles

Chemical mechanical planarization for Ta-based superconducting quantum devices

Ekta Bhatia, Soumen Kar, Jakub Nalaskowski, Tuan Vo, Stephen Olson, Hunter Frost, John Mucci, Brian Martinick, Pui Yee Hung, Ilyssa Wells, Sandra Schujman, Satyavolu S. Papa Rao

J. Vac. Sci. Technol. B 41, 033202 (2023)

https://doi.org/10.1116/6.0002586

Published: April 2023

View articletitled, Chemical mechanical planarization for Ta-based superconducting quantum devices

Journal Articles

Selectively patterned Mg-doped GaN by SiN_x-driven hydrogen injection

Hyun-Soo Lee, Mohammad Wahidur Rahman, Darpan Verma, Violet M. Poole, Roberto C. Myers, Matthew D. McCluskey, Siddharth Rajan

J. Vac. Sci. Technol. B 40, 062201 (2022)

https://doi.org/10.1116/6.0002029

Published: October 2022

View articletitled, Selectively patterned Mg-doped GaN by SiNx-driven hydrogen injection

Journal Articles

Effects of iCVD organic passivation in oxide thin-film transistors under repetitive bending stress for electrical and mechanical stability

Taeseung Jung, Sanghun Jeon

J. Vac. Sci. Technol. B 40, 042201 (2022)

https://doi.org/10.1116/6.0001800

Published: May 2022

View articletitled, Effects of iCVD organic passivation in oxide thin-film transistors under repetitive bending stress for electrical and mechanical stability

Journal Articles

Electrical characterization of gate stack charge traps in floating body gate-all-around field-effect-transistors

Manh-Cuong Nguyen, An Hoang-Thuy Nguyen, Jiyong Yim, Anh-Duy Nguyen, Mingyu Kim, Jeonghan Kim, Jongyeon Beak, Rino Choi

J. Vac. Sci. Technol. B 39, 032203 (2021)

https://doi.org/10.1116/6.0000906

Published: April 2021

View articletitled, Electrical characterization of gate stack charge traps in floating body gate-all-around field-effect-transistors

Journal Articles

Apparent size effects on dopant activation in nanometer-wide Si fins

Steven Folkersma, Janusz Bogdanowicz, Paola Favia, Lennaert Wouters, Dirch Hjorth Petersen, Ole Hansen, Henrik Hartmann Henrichsen, Peter Former Nielsen, Lior Shiv, Wilfried Vandervorst

J. Vac. Sci. Technol. B 39, 023202 (2021)

https://doi.org/10.1116/6.0000921

Published: March 2021

View articletitled, Apparent size effects on dopant activation in nanometer-wide Si fins

Journal Articles

Electrical characterization of Si-doped conductive AlInN films grown nearly lattice-matched to c-plane GaN on sapphire by metalorganic chemical vapor deposition

Makoto Miyoshi, Taiki Nakabayashi, Mizuki Yamanaka, Takashi Egawa, Tetsuya Takeuchi

J. Vac. Sci. Technol. B 38, 052205 (2020)

https://doi.org/10.1116/6.0000284

Published: September 2020

View articletitled, Electrical characterization of Si-doped conductive AlInN films grown nearly lattice-matched to c-plane GaN on sapphire by metalorganic chemical vapor deposition

Journal Articles

Au-free recessed Ohmic contacts to AlGaN/GaN high electron mobility transistor: Study of etch chemistry and metal scheme

Niranjan S, Ivor Guiney, Colin J. Humphreys, Prosenjit Sen, Rangarajan Muralidharan, Digbijoy N. Nath

J. Vac. Sci. Technol. B 38, 032207 (2020)

https://doi.org/10.1116/1.5144509

Published: April 2020

View articletitled, Au-free recessed Ohmic contacts to AlGaN/GaN high electron mobility transistor: Study of etch chemistry and metal scheme

Journal Articles

Integration of the Ni/InP system on a 300 mm platform for III-V/Si hybrid lasers

Flore Boyer, Patrice Gergaud, Karen Dabertrand, Denis Mariolle, Christophe Jany, Fabrice Nemouchi, Magali Grégoire, Quentin Rafhay, Philippe Rodriguez

J. Vac. Sci. Technol. B 38, 012209 (2020)

https://doi.org/10.1116/1.5128554

Published: January 2020

View articletitled, Integration of the Ni/InP system on a 300 mm platform for III-V/Si hybrid lasers

Journal Articles

Sub-rf period electrical characterization of a pulsed capacitively coupled argon plasma

Alex F. Press, Matthew J. Goeckner, Lawrence J. Overzet

J. Vac. Sci. Technol. B 37, 062926 (2019)

https://doi.org/10.1116/1.5132753

Published: November 2019

View articletitled, Sub-rf period electrical characterization of a pulsed capacitively coupled argon plasma

Journal Articles

Low-temperature back-end-of-line technology compatible with III-V nanowire MOSFETs

Stefan Andric, Lars Ohlsson Fhager, Fredrik Lindelöw, Olli-Pekka Kilpi, Lars-Erik Wernersson

J. Vac. Sci. Technol. B 37, 061204 (2019)

https://doi.org/10.1116/1.5121017

Published: October 2019

View articletitled, Low-temperature back-end-of-line technology compatible with III-V nanowire MOSFETs

Journal Articles

One-step transfer printing of patterned nanogap electrodes

Kai B. Saller, Hubert Riedl, Paolo Lugli, Gregor Koblmüller, Marc Tornow

J. Vac. Sci. Technol. B 37, 040602 (2019)

https://doi.org/10.1116/1.5100560

Published: June 2019

View articletitled, One-step transfer printing of patterned nanogap electrodes

Includes: Supplementary data

Journal Articles

Low-temperature, plasma assisted, cyclic synthesis of MoS₂

Christopher J. Perini, Michael J. Muller, Brent K. Wagner, Eric M. Vogel

J. Vac. Sci. Technol. B 36, 031201 (2018)

https://doi.org/10.1116/1.5023202

Published: April 2018

View articletitled, Low-temperature, plasma assisted, cyclic synthesis of MoS2

Journal Articles

Ga⁺ focused ion beam lithography as a viable alternative for multiple fin field effect transistor prototyping

Alessandra Leonhardt, Marcos Vinicius Puydinger dos Santos, José Alexandre Diniz, Leandro Tiago Manera, Lucas Petersen Barbosa Lima

J. Vac. Sci. Technol. B 34, 06KA03 (2016)

https://doi.org/10.1116/1.4963879

Published: October 2016

View articletitled, Ga+ focused ion beam lithography as a viable alternative for multiple fin field effect transistor prototyping

Journal Articles

Electrical characterization of a gate-recessed AlGaN/GaN high-electron-mobility transistor with a p-GaN passivation layer

Kuang-Po Hsueh, Feng-Tso Chien, Li-Yi Peng, Chih-Wei Yang, Hou-Yu Wang, Kai-Di Mai, Hsien-Chin Chiu

J. Vac. Sci. Technol. B 34, 061204 (2016)

https://doi.org/10.1116/1.4963897

Published: September 2016

View articletitled, Electrical characterization of a gate-recessed AlGaN/GaN high-electron-mobility transistor with a p-GaN passivation layer

Journal Articles

Electrical characterization of dry and wet processed interface layer in Ge/High-K devices

Y. M. Ding, D. Misra, M. N. Bhuyian, Kandabara Tapily, Robert D. Clark, Steve Consiglio, Cory S. Wajda, Gert J. Leusink

J. Vac. Sci. Technol. B 34, 021203 (2016)

https://doi.org/10.1116/1.4943559

Published: March 2016

View articletitled, Electrical characterization of dry and wet processed interface layer in Ge/High-K devices

Journal Articles

Formation of nanometer-thick delaminated amorphous carbon layer by two-step plasma processing of methacrylate-based polymer

Dominik Metzler, Florian Weilnboeck, Sandra C. Hernández, Scott G. Walton, Robert L. Bruce, Sebastian Engelmann, Lourdes Salamanca-Riba, Gottlieb S. Oehrlein

J. Vac. Sci. Technol. B 33, 051601 (2015)

https://doi.org/10.1116/1.4928493

Published: August 2015

View articletitled, Formation of nanometer-thick delaminated amorphous carbon layer by two-step plasma processing of methacrylate-based polymer

Journal Articles

Dielectrophoretic manipulation of individual nickel nanowires for electrical transport measurements

Marcos V. Puydinger dos Santos, Lucas P. B. Lima, Rafael A. Mayer, Fanny Béron, Kleber R. Pirota, Jose A. Diniz

J. Vac. Sci. Technol. B 33, 031804 (2015)

https://doi.org/10.1116/1.4918732

Published: April 2015

View articletitled, Dielectrophoretic manipulation of individual nickel nanowires for electrical transport measurements

Journal Articles

Fluorine interface treatments within the gate stack for defect passivation in 28 nm high-k metal gate technology

Maximilian Drescher, Andreas Naumann, Jonas Sundqvist, Elke Erben, Carsten Grass, Martin Trentzsch, Florian Lazarevic, Roman Leitsmann, Philipp Plaenitz

J. Vac. Sci. Technol. B 33, 022204 (2015)

https://doi.org/10.1116/1.4913947

Published: March 2015

View articletitled, Fluorine interface treatments within the gate stack for defect passivation in 28 nm high-k metal gate technology

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Ultrathin tantalum films for Schottky contacts on 4H silicon carbide

Planar microcoil arrays for in vitro cellular-level micromagnetic activation of neurons

Chemical mechanical planarization for Ta-based superconducting quantum devices

Selectively patterned Mg-doped GaN by SiN_x-driven hydrogen injection

Effects of iCVD organic passivation in oxide thin-film transistors under repetitive bending stress for electrical and mechanical stability

Electrical characterization of gate stack charge traps in floating body gate-all-around field-effect-transistors

Apparent size effects on dopant activation in nanometer-wide Si fins

Electrical characterization of Si-doped conductive AlInN films grown nearly lattice-matched to c-plane GaN on sapphire by metalorganic chemical vapor deposition

Au-free recessed Ohmic contacts to AlGaN/GaN high electron mobility transistor: Study of etch chemistry and metal scheme

Integration of the Ni/InP system on a 300 mm platform for III-V/Si hybrid lasers

Sub-rf period electrical characterization of a pulsed capacitively coupled argon plasma

Low-temperature back-end-of-line technology compatible with III-V nanowire MOSFETs

One-step transfer printing of patterned nanogap electrodes

Low-temperature, plasma assisted, cyclic synthesis of MoS₂

Ga⁺ focused ion beam lithography as a viable alternative for multiple fin field effect transistor prototyping

Electrical characterization of a gate-recessed AlGaN/GaN high-electron-mobility transistor with a p-GaN passivation layer

Electrical characterization of dry and wet processed interface layer in Ge/High-K devices

Formation of nanometer-thick delaminated amorphous carbon layer by two-step plasma processing of methacrylate-based polymer

Dielectrophoretic manipulation of individual nickel nanowires for electrical transport measurements

Fluorine interface treatments within the gate stack for defect passivation in 28 nm high-k metal gate technology

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