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Journal Articles

Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications

Editor’s Pick
Hryhorii Stanchu, Grey Abernathy, Joshua Grant, Fernando M. de Oliveira, Yuriy I. Mazur, Jifeng Liu, Wei Du, Baohua Li, Gregory J. Salamo, Shui-Qing Yu
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 042802 (2024)
https://doi.org/10.1116/6.0003734
Published: July 2024
View article titled, Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications
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Journal Articles

AlGe wafer bonding in ultra-high vacuum environment

Thomas Stöttinger, Bernhard Rebhan, Kurt Hingerl
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 042802 (2023)
https://doi.org/10.1116/6.0002539
Published: June 2023
View article titled, AlGe wafer bonding in ultra-high vacuum environment
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Journal Articles

Integration of the Ni/InP system on a 300 mm platform for III-V/Si hybrid lasers

Flore Boyer, Patrice Gergaud, Karen Dabertrand, Denis Mariolle, Christophe Jany, Fabrice Nemouchi, Magali Grégoire, Quentin Rafhay, Philippe Rodriguez
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 38, 012209 (2020)
https://doi.org/10.1116/1.5128554
Published: January 2020
View article titled, Integration of the Ni/InP system on a 300 mm platform for III-V/Si hybrid lasers
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Journal Articles

Effect of oxygen plasma cleaning on nonswitching pseudo-Bosch etching of high aspect ratio silicon pillars

Ferhat Aydinoglu, Aixi Pan, Chenxu Zhu, Bo Cui
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 38, 012804 (2020)
https://doi.org/10.1116/1.5122822
Published: January 2020
View article titled, Effect of oxygen plasma cleaning on nonswitching pseudo-Bosch etching of high aspect ratio silicon pillars
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Journal Articles

Imaging the native inversion layer under buried oxide in silicon-on-insulator radio frequency device technology via scanning surface photovoltage microscopy

Daminda H. Dahanayaka, Philip V. Kaszuba, Leon Moszkowicz, Randall H. Wells, Franklin J. Alwine, Richard A. Phelps, James A. Slinkman, Andrew A. Wong, Lloyd A. Bumm
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 37, 052906 (2019)
https://doi.org/10.1116/1.5111139
Published: September 2019
View article titled, Imaging the native inversion layer under buried oxide in silicon-on-insulator radio frequency device technology via scanning surface photovoltage microscopy
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Journal Articles

Sub-100 nm integrated ferroelectric tunnel junction devices using hydrogen silsesquioxane planarization

Mohammad Abuwasib, Jung-Woo Lee, Hyungwoo Lee, Chang-Beom Eom, Alexei Gruverman, Uttam Singisetti
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 021803 (2017)
https://doi.org/10.1116/1.4978519
Published: March 2017
View article titled, Sub-100 nm integrated ferroelectric tunnel junction devices using hydrogen silsesquioxane planarization
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Journal Articles

Comparison of scanning laser annealing and microwave annealing for As+ implanted Si

Zhao Zhao, Joe Hilman, Manny Oropeza, Qiong Nian, Terry L. Alford
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 011202 (2017)
https://doi.org/10.1116/1.4972051
Published: December 2016
View article titled, Comparison of scanning laser annealing and microwave annealing for As<sup>+</sup> implanted Si
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Journal Articles

High quality extremely thin SOI fabricated by facilitated ion-cut with H-trapping effect

Yongwei Chang, Zhongying Xue, Da Chen, Shi Cheng, Miao Zhang, Zengfeng Di, Xing Wei, Xi Wang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 020601 (2016)
https://doi.org/10.1116/1.4943562
Published: March 2016
View article titled, High quality extremely thin SOI fabricated by facilitated ion-cut with H-trapping effect
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Journal Articles

Improved resistive switching properties in SiOx-based resistive random-access memory cell with Ti buffer layer

Sungjun Kim, Seongjae Cho, Byung-Gook Park
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 022204 (2016)
https://doi.org/10.1116/1.4943560
Published: March 2016
View article titled, Improved resistive switching properties in SiO<sub><em>x</em></sub>-based resistive random-access memory cell with Ti buffer layer
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Journal Articles

Effect of radiation induced charging on gate-all-around NMOS devices

Kenneth E. Kambour, Camron Kouhestani, Duc D. Nguyen, Roderick A. B. Devine
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 011803 (2016)
https://doi.org/10.1116/1.4939500
Published: January 2016
View article titled, Effect of radiation induced charging on gate-all-around NMOS devices
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Journal Articles

Nonlinear and complementary resistive switching behaviors of Au/Ti/TaOx/TiN devices dependent on Ti thicknesses

Heeyoung Jeon, Jingyu Park, Hyunjung Kim, Honggi Kim, Woochool Jang, Hyoseok Song, Hyeongtag Jeon
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 051204 (2015)
https://doi.org/10.1116/1.4927368
Published: July 2015
View article titled, Nonlinear and complementary resistive switching behaviors of Au/Ti/TaO<sub>x</sub>/TiN devices dependent on Ti thicknesses
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Journal Articles

Electron-beam-evaporated thin films of hafnium dioxide for fabricating electronic devices

Zhigang Xiao, Kim Kisslinger
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 042001 (2015)
https://doi.org/10.1116/1.4922627
Published: June 2015
View article titled, Electron-beam-evaporated thin films of hafnium dioxide for fabricating electronic devices
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Journal Articles

Argon–germane in situ plasma clean for reduced temperature Ge on Si epitaxy by high density plasma chemical vapor deposition

Erica A. Douglas, Josephine J. Sheng, Jason C. Verley, Malcolm S. Carroll
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 041202 (2015)
https://doi.org/10.1116/1.4921590
Published: June 2015
View article titled, Argon–germane <em>in situ</em> plasma clean for reduced temperature Ge on Si epitaxy by high density plasma chemical vapor deposition
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Journal Articles

Hole trap distribution on 2 MeV electron irradiated high-k dielectrics

Salvador Dueñas, Helena Castán, Héctor García, Lisa María Fuentes, Luis Bailón, Francesca Campabadal, Joan Marc Rafí, Mireia Bargalló González, Kenitirou Takakura, Isao Tsunoda, Masashi Yoneoka
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 032201 (2015)
https://doi.org/10.1116/1.4915617
Published: March 2015
View article titled, Hole trap distribution on 2 MeV electron irradiated high-k dielectrics
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Journal Articles

Optical conductivity of Ni1−xPtxSi monosilicides (0 < x < 0.3) from spectroscopic ellipsometry

Lina S. Abdallah, Stefan Zollner, Christian Lavoie, Ahmet S. Ozcan, Mark Raymond
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 051210 (2014)
https://doi.org/10.1116/1.4895111
Published: September 2014
View article titled, Optical conductivity of Ni<sub>1−</sub><sub><em>x</em></sub>Pt<sub><em>x</em></sub>Si monosilicides (0 &lt; <em>x</em> &lt; 0.3) from spectroscopic ellipsometry
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Includes: Supplementary data
Journal Articles

Contamination mitigation of hydrogen silsesquioxane resist processed with Na+-containing developer for nanoscale CMOS device patterning

Markus Brink, Isaac Lauer, Sebastian U. Engelmann, Amlan Majumdar, Stephan A. Cohen, Ernst Kratschmer, Michael A. Guillorn
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 022204 (2014)
https://doi.org/10.1116/1.4867653
Published: March 2014
View article titled, Contamination mitigation of hydrogen silsesquioxane resist processed with Na<sup>+</sup>-containing developer for nanoscale CMOS device patterning
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Journal Articles

Two-terminal vertical memory cell for cross-point static random access memory applications

Xiaodong Tong, Jun Luo, Hao Wu, Qingqing Liang, Huicai Zhong, Huilong Zhu, Chao Zhao
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 021205 (2014)
https://doi.org/10.1116/1.4865572
Published: February 2014
View article titled, Two-terminal vertical memory cell for cross-point static random access memory applications
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Journal Articles

Patterning of silicon nitride for CMOS gate spacer technology. II. Impact of subsilicon surface carbon implantation on epitaxial regrowth

Romuald Blanc, Cécile Jenny, Sébastien Lagrasta, François Leverd, Olivier Joubert
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 021806 (2014)
https://doi.org/10.1116/1.4865896
Published: February 2014
View article titled, Patterning of silicon nitride for CMOS gate spacer technology. II. Impact of subsilicon surface carbon implantation on epitaxial regrowth
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Journal Articles

Improvement of resistive switching uniformity for TiO2-based memristive devices by introducing a thin HfO2 layer

Hao Jiang, Qiangfei Xia
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 31, 06FA04 (2013)
https://doi.org/10.1116/1.4831764
Published: November 2013
View article titled, Improvement of resistive switching uniformity for TiO<sub>2</sub>-based memristive devices by introducing a thin HfO<sub>2</sub> layer
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Journal Articles

Influence of Al/TiN/SiO2 structure on MOS capacitor, Schottky diode, and fin field effect transistors devices

Lucas P. B. Lima, José A. Diniz, Claudio Radtke, Marcos V. P. dos Santos, Ioshiaki Doi, José Godoy Fo
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 31, 052202 (2013)
https://doi.org/10.1116/1.4817178
Published: August 2013
View article titled, Influence of Al/TiN/SiO<sub>2</sub> structure on MOS capacitor, Schottky diode, and fin field effect transistors devices
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