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Journal Articles

Influence of gate material and diamond surface termination on current conduction in metal/Al₂O₃/diamond capacitors

Satoshi Okubo, Daisuke Matsumura, Hiroshi Kawarada, Atsushi Hiraiwa

J. Vac. Sci. Technol. B 42, 012202 (2024)

https://doi.org/10.1116/6.0003272

Published: January 2024

View article titled, Influence of gate material and diamond surface termination on current conduction in metal/Al2O3/diamond capacitors

Journal Articles

Investigation of a defect in the β-Ga₂O₃ substrate material from capacitance transients

Jian V. Li, Adam T. Neal, Shin Mou, Man Hoi Wong

J. Vac. Sci. Technol. B 40, 064001 (2022)

https://doi.org/10.1116/6.0002045

Published: October 2022

View article titled, Investigation of a defect in the β-Ga2O3 substrate material from capacitance transients

Journal Articles

Defect characterization in floating body transistors using a single pulse charge pumping method

Manh-Cuong Nguyen, An Hoang-Thuy Nguyen, Jiyong Yim, Anh-Duy Nguyen, Mingyu Kim, Jeonghan Kim, Jongyeon Baek, Rino Choi

J. Vac. Sci. Technol. B 39, 053205 (2021)

https://doi.org/10.1116/6.0001172

Published: September 2021

View article titled, Defect characterization in floating body transistors using a single pulse charge pumping method

Journal Articles

Titanium diffusion in Si/Al₂O₃/Ti/Au metal oxide semiconductor capacitors

Roberta Hawkins, Anuj Jain, Sohum Kulkarni, Chadwin Young

J. Vac. Sci. Technol. B 39, 042201 (2021)

https://doi.org/10.1116/6.0001045

Published: June 2021

View article titled, Titanium diffusion in Si/Al2O3/Ti/Au metal oxide semiconductor capacitors

Includes: Supplementary data

Journal Articles

High sensitivity x-ray detectors based on 4H-SiC p-i-n structure with 80 μm thick intrinsic layer

Qing Liu, Dong Zhou, Weizong Xu, Dunjun Chen, Fangfang Ren, Rong Zhang, Youdou Zheng, Hai Lu

J. Vac. Sci. Technol. B 39, 022202 (2021)

https://doi.org/10.1116/6.0000829

Published: March 2021

View article titled, High sensitivity x-ray detectors based on 4H-SiC p-i-n structure with 80 μm thick intrinsic layer

Journal Articles

Postdeposition annealing effect on the reliability of atomic-layer-deposited Al₂O₃ films on GaN

Kiyotaka Horikawa (堀川清貴), Satoshi Okubo (大久保智), Hiroshi Kawarada (川原田洋), Atsushi Hiraiwa (平岩篤)

J. Vac. Sci. Technol. B 38, 062207 (2020)

https://doi.org/10.1116/6.0000531

Published: October 2020

View article titled, Postdeposition annealing effect on the reliability of atomic-layer-deposited Al2O3 films on GaN

Journal Articles

Evaluation of interface trap characterization methods in 4H-SiC metal oxide semiconductor structures over a wide temperature range

Fabian Triendl, Gernot Fleckl, Michael Schneider, Georg Pfusterschmied, Ulrich Schmid

J. Vac. Sci. Technol. B 37, 032903 (2019)

https://doi.org/10.1116/1.5094137

Published: May 2019

View article titled, Evaluation of interface trap characterization methods in 4H-SiC metal oxide semiconductor structures over a wide temperature range

Journal Articles

Design and fabrication of large-area tunable MOEMS-based shortwave infrared Fabry-Pérot filters

Jyun-Hao Liao, Wen Wang, Chien-Ju Chen, Chia-Jui Yu, Meng-Chyi Wu

J. Vac. Sci. Technol. B 37, 032002 (2019)

https://doi.org/10.1116/1.5085259

Published: April 2019

View article titled, Design and fabrication of large-area tunable MOEMS-based shortwave infrared Fabry-Pérot filters

Journal Articles

Effect of surface treatments on electrical properties of β-Ga₂O₃

Jiancheng Yang, Zachary Sparks, Fan Ren, Stephen J. Pearton, Marko Tadjer

J. Vac. Sci. Technol. B 36, 061201 (2018)

https://doi.org/10.1116/1.5052229

Published: September 2018

View article titled, Effect of surface treatments on electrical properties of β-Ga2O3

Journal Articles

Electrical and optical characterization of CdTe solar cells with CdS and CdSe buffers—A comparative study

Md Dalim Mia, Craig H. Swartz, Sanjoy Paul, Sandeep Sohal, Corey R. Grice, Yanfa Yan, Mark Holtz, Jian V. Li

J. Vac. Sci. Technol. B 36, 052904 (2018)

https://doi.org/10.1116/1.5044219

Published: September 2018

View article titled, Electrical and optical characterization of CdTe solar cells with CdS and CdSe buffers—A comparative study

Journal Articles

Analysis of strain induced carrier confinement with varying passivation thickness of the Al_0.3Ga_0.7N/GaN heterostructure with graded Al_xGa_1-xN buffer on Si (111) substrate

Syed Mukulika Dinara, Saptarsi Ghosh, Sanjay Kr. Jana, Shubhankar Majumdar, Dhrubes Biswas, Sekhar Bhattacharya

J. Vac. Sci. Technol. B 35, 051202 (2017)

https://doi.org/10.1116/1.4996735

Published: July 2017

View article titled, Analysis of strain induced carrier confinement with varying passivation thickness of the Al0.3Ga0.7N/GaN heterostructure with graded AlxGa1-xN buffer on Si (111) substrate

Journal Articles

Electrical behavior of β-Ga₂O₃ Schottky diodes with different Schottky metals

Yao Yao, Raveena Gangireddy, Jaewoo Kim, Kalyan Kumar Das, Robert F. Davis, Lisa M. Porter

J. Vac. Sci. Technol. B 35, 03D113 (2017)

https://doi.org/10.1116/1.4980042

Published: May 2017

View article titled, Electrical behavior of β-Ga2O3 Schottky diodes with different Schottky metals

Journal Articles

Electrical and optical characteristics of gamma-ray irradiated AlGaN/GaN high electron mobility transistors

Min P. Khanal, Burcu Ozden, Kyunghyuk Kim, Sunil Uprety, Vahid Mirkhani, Kosala Yapabandara, Ayayi C. Ahyi, Minseo Park

J. Vac. Sci. Technol. B 35, 03D107 (2017)

https://doi.org/10.1116/1.4979976

Published: April 2017

View article titled, Electrical and optical characteristics of gamma-ray irradiated AlGaN/GaN high electron mobility transistors

Journal Articles

Extraction of bulk and interface trap densities in amorphous InGaZnO thin-film transistors

Chan-Yong Jeong, Hee-Joong Kim, Jong In Kim, Jong-Ho Lee, Hyuck-In Kwon

J. Vac. Sci. Technol. B 34, 060601 (2016)

https://doi.org/10.1116/1.4964608

Published: October 2016

View article titled, Extraction of bulk and interface trap densities in amorphous InGaZnO thin-film transistors

Journal Articles

Deep traps and instabilities in AlGaN/GaN high electron mobility transistors on Si substrates

Alexander Y. Polyakov, N. B. Smirnov, A. V. Turutin, I. S. Shemerov, Fan Ren, S. J. Pearton, J. Wayne Johnson

J. Vac. Sci. Technol. B 34, 041216 (2016)

https://doi.org/10.1116/1.4953347

Published: June 2016

View article titled, Deep traps and instabilities in AlGaN/GaN high electron mobility transistors on Si substrates

Journal Articles

Temperature-dependent electrical instability of p-type SnO thin-film transistors

Jeong-Hwan Lee, Yong-Jin Choi, Chan-Yong Jeong, Chang-Woo Lee, Hyuck-In Kwon

J. Vac. Sci. Technol. B 34, 041210 (2016)

https://doi.org/10.1116/1.4949558

Published: May 2016

View article titled, Temperature-dependent electrical instability of p-type SnO thin-film transistors

Journal Articles

Dependence of reverse bias leakage on depletion width and V-pit size in InGaN/GaN light-emitting diodes grown on silicon

Hyun Kum, Mihyun Kim, Dong-gun Lee, Youngjo Tak, Jongsun Maeng, Joosung Kim, Gilho Gu, Joong Jung Kim, Yongil Kim, Jun-Youn Kim, Youngsoo Park

J. Vac. Sci. Technol. B 33, 060602 (2015)

https://doi.org/10.1116/1.4933039

Published: October 2015

View article titled, Dependence of reverse bias leakage on depletion width and V-pit size in InGaN/GaN light-emitting diodes grown on silicon

Journal Articles

Electronic properties and charge storage effect of amorphous SiN passivated nanocrystalline silicon

Dameng Tan, Pei Zhang, Jie Xu, Yunqing Cao, Peng Lu, Wei Li, Jun Xu, Kunji Chen

J. Vac. Sci. Technol. B 33, 041205 (2015)

https://doi.org/10.1116/1.4923228

Published: June 2015

View article titled, Electronic properties and charge storage effect of amorphous SiN passivated nanocrystalline silicon

Journal Articles

Negative gate-bias instability of ZnO thin-film transistors studied by current–voltage and capacitance–voltage analyses

Yurong Liu, Shufeng Mo, Ruohe Yao, Pui To Lai

J. Vac. Sci. Technol. B 32, 061208 (2014)

https://doi.org/10.1116/1.4901505

Published: November 2014

View article titled, Negative gate-bias instability of ZnO thin-film transistors studied by current–voltage and capacitance–voltage analyses

Journal Articles

Comprehensive characterization of interface and oxide states in metal/oxide/semiconductor capacitors by pulsed mode capacitance and differential isothermal capacitance spectroscopy

Pierre R. Muret

J. Vac. Sci. Technol. B 32, 03D114 (2014)

https://doi.org/10.1116/1.4865912

Published: February 2014

View article titled, Comprehensive characterization of interface and oxide states in metal/oxide/semiconductor capacitors by pulsed mode capacitance and differential isothermal capacitance spectroscopy

NARROW

Topics

Influence of gate material and diamond surface termination on current conduction in metal/Al₂O₃/diamond capacitors

Investigation of a defect in the β-Ga₂O₃ substrate material from capacitance transients

Defect characterization in floating body transistors using a single pulse charge pumping method

Titanium diffusion in Si/Al₂O₃/Ti/Au metal oxide semiconductor capacitors

High sensitivity x-ray detectors based on 4H-SiC p-i-n structure with 80 μm thick intrinsic layer

Postdeposition annealing effect on the reliability of atomic-layer-deposited Al₂O₃ films on GaN

Evaluation of interface trap characterization methods in 4H-SiC metal oxide semiconductor structures over a wide temperature range

Design and fabrication of large-area tunable MOEMS-based shortwave infrared Fabry-Pérot filters

Effect of surface treatments on electrical properties of β-Ga₂O₃

Electrical and optical characterization of CdTe solar cells with CdS and CdSe buffers—A comparative study

Analysis of strain induced carrier confinement with varying passivation thickness of the Al_0.3Ga_0.7N/GaN heterostructure with graded Al_xGa_1-xN buffer on Si (111) substrate

Electrical behavior of β-Ga₂O₃ Schottky diodes with different Schottky metals

Electrical and optical characteristics of gamma-ray irradiated AlGaN/GaN high electron mobility transistors

Extraction of bulk and interface trap densities in amorphous InGaZnO thin-film transistors

Deep traps and instabilities in AlGaN/GaN high electron mobility transistors on Si substrates

Temperature-dependent electrical instability of p-type SnO thin-film transistors

Dependence of reverse bias leakage on depletion width and V-pit size in InGaN/GaN light-emitting diodes grown on silicon

Electronic properties and charge storage effect of amorphous SiN passivated nanocrystalline silicon

Negative gate-bias instability of ZnO thin-film transistors studied by current–voltage and capacitance–voltage analyses

Comprehensive characterization of interface and oxide states in metal/oxide/semiconductor capacitors by pulsed mode capacitance and differential isothermal capacitance spectroscopy

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