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Journal Articles

Preparation and effects of O2 flow on the electrical characteristics of Li doped MgZnO thin film transistors

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Longjie Tian, Song Gao, Yaobin Ma, Qi Wang, Dongzhan Zhou, Ran Li, Xiqing Zhang, Yongsheng Wang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 031207 (2017)
https://doi.org/10.1116/1.4983086
Published: May 2017
View article titled, Preparation and effects of O2 flow on the electrical characteristics of Li doped MgZnO thin film transistors
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Journal Articles

Enhanced wall-plug efficiency in monolithically integrated vertical light-emitting-diode cells based on III-nitride heterostructures

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Hyung Jo Park, Hyo Jung Bae, Jun Beom Park, Jun Seok Ha, Tak Jeong, Jong Hyeob Baek, Seung Hwan Kim, Jae-Hyun Ryou
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 021206 (2016)
https://doi.org/10.1116/1.4943941
Published: March 2016
View article titled, Enhanced wall-plug efficiency in monolithically integrated vertical light-emitting-diode cells based on III-nitride heterostructures
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Journal Articles

Carrier transport analysis of n-ZnO:Al/p-GaN:Mg heterojunction light-emitting diodes

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Seonghoon Jeong, Hyunsoo Kim
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 021205 (2015)
https://doi.org/10.1116/1.4913872
Published: March 2015
View article titled, Carrier transport analysis of n-ZnO:Al/p-GaN:Mg heterojunction light-emitting diodes
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Journal Articles

Wavelength stable, p-side-down green light emitting diodes grown by molecular beam epitaxy

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Scott Newman, Chad Gallinat, Jonathan Wright, Ryan Enck, Anand Sampath, Hongen Shen, Meredith Reed, Michael Wraback
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 31, 010601 (2013)
https://doi.org/10.1116/1.4769732
Published: December 2012
View article titled, Wavelength stable, p-side-down green light emitting diodes grown by molecular beam epitaxy
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Journal Articles

Effect of oxygen plasma-induced current blocking on the performance of GaN-based vertical light-emitting diodes

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Sang Youl Lee, Kwang Ki Choi, Hwan Hee Jeong, Eun Joo Kim, June O. Song, Joon-Woo Jeon, Tae-Yeon Seong
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 041203 (2011)
https://doi.org/10.1116/1.3607315
Published: July 2011
View article titled, Effect of oxygen plasma-induced current blocking on the performance of GaN-based vertical light-emitting diodes
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Journal Articles

Copper-plated 50 nm T -gate fabrication

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Richard K. Oxland, Xu Li, Susan Ferguson, Steven Bentley, Iain G. Thayne
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, C6P6–C6P10 (2010)
https://doi.org/10.1116/1.3501346
Published: October 2010
View article titled, Copper-plated 50 nm T -gate fabrication
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Journal Articles

Current spreading of III-nitride light-emitting diodes using plasma treatment

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Hsin-Ying Lee, Ke-Hao Pan, Chih-Chien Lin, Yun-Chorng Chang, Fu-Jen Kao, Ching-Ting Lee
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 25, 1280–1283 (2007)
https://doi.org/10.1116/1.2753853
Published: July 2007
View article titled, Current spreading of III-nitride light-emitting diodes using plasma treatment
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Journal Articles

Simulation of vertical and lateral ZnO light-emitting diodes

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Soohwan Jang, J. J. Chen, F. Ren, Hyuck-Soo Yang, Sang-Youn Han, D. P. Norton, S. J. Pearton
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 24, 690–694 (2006)
https://doi.org/10.1116/1.2180255
Published: March 2006
View article titled, Simulation of vertical and lateral ZnO light-emitting diodes
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Journal Articles

Enhancement of electroluminescence in GaN-based light-emitting diodes using an efficient current blocking layer

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Ho Won Jang, Jong-Lam Lee
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 23, 2284–2287 (2005)
https://doi.org/10.1116/1.2083931
Published: October 2005
View article titled, Enhancement of electroluminescence in GaN-based light-emitting diodes using an efficient current blocking layer
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Journal Articles

Interplay of current crowding and current self-quenching effects in planar cold cathodes

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Y. Modukuru, M. Cahay
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 19, 2149–2154 (2001)
https://doi.org/10.1116/1.1415515
Published: November 2001
View article titled, Interplay of current crowding and current self-quenching effects in planar cold cathodes
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Journal Articles

Self-heating effects in a InP/CdS/LaS cold cathode

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Aashish Malhotra, Yamini Modukuru, Marc Cahay
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 16, 3086–3096 (1998)
https://doi.org/10.1116/1.590446
Published: November 1998
View article titled, Self-heating effects in a InP/CdS/LaS cold cathode
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Journal Articles

Effect of Mo oxide layer on electromigration resistance of Al–Si–Cu/Mo bilayered interconnections

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Shin‐ichi Fukada, Motoo Suwa
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 11, 319–325 (1993)
https://doi.org/10.1116/1.586677
Published: March 1993
View article titled, Effect of Mo oxide layer on electromigration resistance of Al–Si–Cu/Mo bilayered interconnections
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Journal Articles

Design considerations of silicon avalanche cathodes

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M. Wang, Y. Lu, B. Lalevic
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 11, 426–428 (1993)
https://doi.org/10.1116/1.586876
Published: March 1993
View article titled, Design considerations of silicon avalanche cathodes
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Journal Articles

Vertical npn transistors by maskless boron implantation

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Robert H. Reuss, Damon Morgan, Edwin W. Greeneich, William M. Clark, Jr., David B. Rensch
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 3, 62–66 (1985)
https://doi.org/10.1116/1.583292
Published: January 1985
View article titled, Vertical npn transistors by maskless boron implantation
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