Page 1 | Search Results | Journal of Vacuum Science & Technology B

1-20 of 208

Sort by

Sort Order Select

Journal Articles

Ultrathin tantalum films for Schottky contacts on 4H silicon carbide

Renato M. Beraldo, Rodrigo R. César, Melissa Mederos, Jacilene M. Medeiros, Andrei Alaferdov, Érick A. Santos, Ednan Joanni, Thebano E. A. Santos, Ricardo C. Teixeira, Marcos V. Puydinger dos Santos, Renato A. Minamisawa, José Alexandre Diniz

J. Vac. Sci. Technol. B 43, 033202 (2025)

https://doi.org/10.1116/6.0004313

Published: April 2025

View article titled, Ultrathin tantalum films for Schottky contacts on 4H silicon carbide

Journal Articles

Experimental current-voltage-temperature and thermal sensitivity behaviors of an ideal Schottky barrier diode over a wide temperature range

Hasan Efeoǧlu, Abdulmecit Turut

J. Vac. Sci. Technol. B 43, 022212 (2025)

https://doi.org/10.1116/6.0004273

Published: March 2025

View article titled, Experimental current-voltage-temperature and thermal sensitivity behaviors of an ideal Schottky barrier diode over a wide temperature range

Journal Articles

Electron emission from HfC(100) single-crystal tip

Toshiaki Kusunoki, Noriaki Arai

J. Vac. Sci. Technol. B 42, 043204 (2024)

https://doi.org/10.1116/6.0003632

Published: July 2024

View article titled, Electron emission from HfC(100) single-crystal tip

Journal Articles

Effect of inductively coupled plasma etch on the interface barrier behavior of (001) β-Ga₂O₃ Schottky barrier diode

Hoon-Ki Lee, V. Janardhanam, Woojin Chang, Kyujun Cho, Chel-Jong Choi, Jae Kyoung Mun

J. Vac. Sci. Technol. B 42, 042204 (2024)

https://doi.org/10.1116/6.0003608

Published: June 2024

View article titled, Effect of inductively coupled plasma etch on the interface barrier behavior of (001) β-Ga2O3 Schottky barrier diode

Journal Articles

Analysis of temperature-dependent current–voltage characteristics of Schottky diodes by the modified thermionic emission current model

Abdulmecit Turut

J. Vac. Sci. Technol. B 42, 032201 (2024)

https://doi.org/10.1116/6.0003463

Published: March 2024

View article titled, Analysis of temperature-dependent current–voltage characteristics of Schottky diodes by the modified thermionic emission current model

Journal Articles

Low-temperature electrical properties and barrier inhomogeneities in ITO/β-Ga₂O₃ Schottky diode

Sanjoy Paul, Roberto Lopez, Adam T. Neal, Shin Mou, Jian V. Li

J. Vac. Sci. Technol. B 42, 024004 (2024)

https://doi.org/10.1116/6.0003401

Published: March 2024

View article titled, Low-temperature electrical properties and barrier inhomogeneities in ITO/β-Ga2O3 Schottky diode

Journal Articles

Theoretical approach to thermal sensitivity capability of metal-semiconductor diodes with different Schottky contact area

Abdulmecit Turut

J. Vac. Sci. Technol. B 41, 062202 (2023)

https://doi.org/10.1116/6.0002976

Published: September 2023

View article titled, Theoretical approach to thermal sensitivity capability of metal-semiconductor diodes with different Schottky contact area

Journal Articles

A novel design of a retarding field electron energy analyzer with a cavity electrode providing extremely high energy resolution

Kazuhiro Honda, Hiroyuki Ito, Souichi Katagiri, Takashi Doi, Masahiro Sasaki

J. Vac. Sci. Technol. B 41, 044006 (2023)

https://doi.org/10.1116/6.0002597

Published: June 2023

View article titled, A novel design of a retarding field electron energy analyzer with a cavity electrode providing extremely high energy resolution

Includes: Supplementary data

Journal Articles

Thermal sensing capability and current–voltage–temperature characteristics in Pt/n-GaP/Al/Ti Schottky diodes

Hasan Efeoǧlu, Abdulmecit Turut

J. Vac. Sci. Technol. B 41, 022207 (2023)

https://doi.org/10.1116/6.0002411

Published: March 2023

View article titled, Thermal sensing capability and current–voltage–temperature characteristics in Pt/n-GaP/Al/Ti Schottky diodes

Journal Articles

Fabrication, and Direct Current and cryogenic analysis of SF₆-treated AlGaN/GaN Schottky barrier diodes

Quentin Fornasiero, Nicolas Defrance, Sylvie Lepilliet, Vanessa Avramovic, Yvon Cordier, Eric Frayssinet, Marie Lesecq, Nadir Idir, Jean-Claude De Jaeger

J. Vac. Sci. Technol. B 41, 012202 (2023)

https://doi.org/10.1116/6.0002125

Published: December 2022

View article titled, Fabrication, and Direct Current and cryogenic analysis of SF6-treated AlGaN/GaN Schottky barrier diodes

Journal Articles

Thermal sensitivity and current-voltage-temperature characteristics in Pt/epitaxy n-Si/n⁺Si structures as a function of Schottky contact area

Hasan Efeoǧlu, Abdulmecit Turut, Melik Gül

J. Vac. Sci. Technol. B 40, 052208 (2022)

https://doi.org/10.1116/6.0002030

Published: September 2022

View article titled, Thermal sensitivity and current-voltage-temperature characteristics in Pt/epitaxy n-Si/n+Si structures as a function of Schottky contact area

Journal Articles

Physics based model of an AlGaN/GaN vacuum field effect transistor

N. Hernandez, M. Cahay, J. Ludwick, T. Back, H. Hall, J. O’Mara

J. Vac. Sci. Technol. B 40, 053201 (2022)

https://doi.org/10.1116/6.0001959

Published: September 2022

View article titled, Physics based model of an AlGaN/GaN vacuum field effect transistor

Includes: Supplementary data

Journal Articles

Temperature dependence of barrier height inhomogeneity in β-Ga₂O₃ Schottky barrier diodes

Aakash Jadhav, Luke A. M. Lyle, Ziyi Xu, Kalyan K. Das, Lisa M. Porter, Biplab Sarkar

J. Vac. Sci. Technol. B 39, 040601 (2021)

https://doi.org/10.1116/6.0001059

Published: June 2021

View article titled, Temperature dependence of barrier height inhomogeneity in β-Ga2O3 Schottky barrier diodes

Journal Articles

β-Ga₂O₃ Schottky diodes based strain gauges with high resistance, large gauge factor, and high operating temperature

Bo-You Liu, Jian V. Li

J. Vac. Sci. Technol. B 39, 012206 (2021)

https://doi.org/10.1116/6.0000776

Published: January 2021

View article titled, β-Ga2O3 Schottky diodes based strain gauges with high resistance, large gauge factor, and high operating temperature

Journal Articles

Detection of some amino acids with modulation-doped and surface-nanoengineered GaAs Schottky P-I-N diodes

Tamador Alkhidir, Maguy Abi Jaoude, Deborah L. Gater, Christopher Alpha, A. F. Isakovic

J. Vac. Sci. Technol. B 38, 054002 (2020)

https://doi.org/10.1116/6.0000186

Published: August 2020

View article titled, Detection of some amino acids with modulation-doped and surface-nanoengineered GaAs Schottky P-I-N diodes

Journal Articles

Effect of thermal annealing for W/β-Ga₂O₃ Schottky diodes up to 600 °C

Minghan Xian, Chaker Fares, Fan Ren, Brent P. Gila, Yen-Ting Chen, Yu-Te Liao, Marko Tadjer, Stephen J. Pearton

J. Vac. Sci. Technol. B 37, 061201 (2019)

https://doi.org/10.1116/1.5125006

Published: September 2019

View article titled, Effect of thermal annealing for W/β-Ga2O3 Schottky diodes up to 600 °C

Journal Articles

Evaluation of electron optics with an offset cylindrical lens: Application to a monochromator or energy analyzer

Takashi Ogawa, Yoshizo Takai

J. Vac. Sci. Technol. B 36, 032902 (2018)

https://doi.org/10.1116/1.5025775

Published: May 2018

View article titled, Evaluation of electron optics with an offset cylindrical lens: Application to a monochromator or energy analyzer

Includes: Supplementary data

Journal Articles

Annealing of dry etch damage in metallized and bare (-201) Ga₂O₃

Jiancheng Yang, Fan Ren, Rohit Khanna, Kristen Bevlin, Dwarakanath Geerpuram, Li-Chun Tung, Jingyu Lin, Hongxing Jiang, Jonathan Lee, Elena Flitsiyan, Leonid Chernyak, S. J. Pearton, Akito Kuramata

J. Vac. Sci. Technol. B 35, 051201 (2017)

https://doi.org/10.1116/1.4986300

Published: July 2017

View article titled, Annealing of dry etch damage in metallized and bare (-201) Ga2O3

Journal Articles

Electrical behavior of β-Ga₂O₃ Schottky diodes with different Schottky metals

Yao Yao, Raveena Gangireddy, Jaewoo Kim, Kalyan Kumar Das, Robert F. Davis, Lisa M. Porter

J. Vac. Sci. Technol. B 35, 03D113 (2017)

https://doi.org/10.1116/1.4980042

Published: May 2017

View article titled, Electrical behavior of β-Ga2O3 Schottky diodes with different Schottky metals

Journal Articles

Inductively coupled plasma etching of bulk, single-crystal Ga₂O₃

Jiancheng Yang, Shihyun Ahn, Fan Ren, Stephen Pearton, Rohit Khanna, Kristen Bevlin, Dwarakanath Geerpuram, Akito Kuramata

J. Vac. Sci. Technol. B 35, 031205 (2017)

https://doi.org/10.1116/1.4982714

Published: May 2017

View article titled, Inductively coupled plasma etching of bulk, single-crystal Ga2O3

Update search

NARROW

Format

Collections

Topics

Subjects

Journal

Article Type

Issue Section

Date

Availability

Ultrathin tantalum films for Schottky contacts on 4H silicon carbide

Experimental current-voltage-temperature and thermal sensitivity behaviors of an ideal Schottky barrier diode over a wide temperature range

Electron emission from HfC(100) single-crystal tip

Effect of inductively coupled plasma etch on the interface barrier behavior of (001) β-Ga₂O₃ Schottky barrier diode

Analysis of temperature-dependent current–voltage characteristics of Schottky diodes by the modified thermionic emission current model

Low-temperature electrical properties and barrier inhomogeneities in ITO/β-Ga₂O₃ Schottky diode

Theoretical approach to thermal sensitivity capability of metal-semiconductor diodes with different Schottky contact area

A novel design of a retarding field electron energy analyzer with a cavity electrode providing extremely high energy resolution

Thermal sensing capability and current–voltage–temperature characteristics in Pt/n-GaP/Al/Ti Schottky diodes

Fabrication, and Direct Current and cryogenic analysis of SF₆-treated AlGaN/GaN Schottky barrier diodes

Thermal sensitivity and current-voltage-temperature characteristics in Pt/epitaxy n-Si/n⁺Si structures as a function of Schottky contact area

Physics based model of an AlGaN/GaN vacuum field effect transistor

Temperature dependence of barrier height inhomogeneity in β-Ga₂O₃ Schottky barrier diodes

β-Ga₂O₃ Schottky diodes based strain gauges with high resistance, large gauge factor, and high operating temperature

Detection of some amino acids with modulation-doped and surface-nanoengineered GaAs Schottky P-I-N diodes

Effect of thermal annealing for W/β-Ga₂O₃ Schottky diodes up to 600 °C

Evaluation of electron optics with an offset cylindrical lens: Application to a monochromator or energy analyzer

Annealing of dry etch damage in metallized and bare (-201) Ga₂O₃

Electrical behavior of β-Ga₂O₃ Schottky diodes with different Schottky metals

Inductively coupled plasma etching of bulk, single-crystal Ga₂O₃

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

Update search

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only