1-20 of 141
Light emitting diodes
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

MeV proton and neutron damage effects on deep-ultraviolet light-emitting diodes

Jian-Sian Li, Chao-Ching Chiang, Hsiao-Hsuan Wan, Jihyun Kim, Simon Barke, Peter Wass, Fan Ren, John W. Conklin, S. J. Pearton
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 052206 (2024)
https://doi.org/10.1116/6.0003818
Published: August 2024
View article titled, MeV proton and neutron damage effects on deep-ultraviolet light-emitting diodes
Open the PDF for MeV proton and neutron damage effects on deep-ultraviolet light-emitting diodes in another window
Journal Articles

Near zero-field magnetoresistance and defects in gallium nitride pn junctions

M. J. Elko, D. T. Hassenmayer, A. A. Higgins, P. M. Lenahan, M. E. Flatté, D. Fehr, M. D. Craven, T. D. Larsen
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 052205 (2024)
https://doi.org/10.1116/6.0003855
Published: August 2024
View article titled, Near zero-field magnetoresistance and defects in gallium nitride pn junctions
Open the PDF for Near zero-field magnetoresistance and defects in gallium nitride pn junctions in another window
Journal Articles

GaAs/GeSn/Ge n–i–p diodes and light emitting diodes formed via grafting

Jie Zhou, Haibo Wang, Po Rei Huang, Shengqiang Xu, Yang Liu, Jiarui Gong, Jianping Shen, Daniel Vicent, Samuel Haessly, Alireza Abrand, Parsian K. Mohseni, Munho Kim, Shui-Qing Yu, Guo-En Chang, Xiao Gong, Zhenqiang Ma
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 042213 (2024)
https://doi.org/10.1116/6.0003619
Published: July 2024
View article titled, GaAs/GeSn/Ge <em>n–i–p</em> diodes and light emitting diodes formed via grafting
Open the PDF for GaAs/GeSn/Ge <em>n–i–p</em> diodes and light emitting diodes formed via grafting in another window
Journal Articles

Development of “GaSb-on-silicon” metamorphic substrates for optoelectronic device growth

Fatih F. Ince, Mega Frost, Darryl Shima, Thomas J. Rotter, Sadhvikas Addamane, Chadwick L. Canedy, Stephanie Tomasulo, Chul Soo Kim, William W. Bewley, Igor Vurgaftman, Jerry R. Meyer, Ganesh Balakrishnan
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 012205 (2024)
https://doi.org/10.1116/6.0003211
Published: January 2024
View article titled, Development of “GaSb-on-silicon” metamorphic substrates for optoelectronic device growth
Open the PDF for Development of “GaSb-on-silicon” metamorphic substrates for optoelectronic device growth in another window
Journal Articles

Permeation of oxygen and water into a plasma-enhanced chemical vapor deposited silicon nitride film as function of deposition pressure

Masayuki Shiochi, Hiroshi Fujimoto, Hin Wai Mo, Keiko Inoue, Yusaku Tanahashi, Hiroyuki Hosomi, Takashi Miyamoto, Hiroshi Miyazaki, Chihaya Adachi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 060601 (2023)
https://doi.org/10.1116/6.0003050
Published: October 2023
View article titled, Permeation of oxygen and water into a plasma-enhanced chemical vapor deposited silicon nitride film as function of deposition pressure
Open the PDF for Permeation of oxygen and water into a plasma-enhanced chemical vapor deposited silicon nitride film as function of deposition pressure in another window
Includes: Supplementary data
Journal Articles

III–V semiconductor devices grown by metalorganic chemical vapor deposition—The development of the Swiss Army Knife for semiconductor epitaxial growth

Russell D. Dupuis
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 060803 (2023)
https://doi.org/10.1116/6.0003062
Published: October 2023
View article titled, III–V semiconductor devices grown by metalorganic chemical vapor deposition—The development of the Swiss Army Knife for semiconductor epitaxial growth
Open the PDF for III–V semiconductor devices grown by metalorganic chemical vapor deposition—The development of the Swiss Army Knife for semiconductor epitaxial growth in another window
Journal Articles

Radiation damage in GaN/AlGaN and SiC electronic and photonic devices

S. J. Pearton, Xinyi Xia, Fan Ren, Md Abu Jafar Rasel, Sergei Stepanoff, Nahid Al-Mamun, Aman Haque, Douglas E. Wolfe
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 030802 (2023)
https://doi.org/10.1116/6.0002628
Published: April 2023
View article titled, Radiation damage in GaN/AlGaN and SiC electronic and photonic devices
Open the PDF for Radiation damage in GaN/AlGaN and SiC electronic and photonic devices in another window
Journal Articles

Effect of substrate rotation speed on AlGaN nanowire deep ultraviolet light-emitting diodes by molecular beam epitaxy

Mohammad Fazel Vafadar, Rezoana Bente Arif, Qihua Zhang, Songrui Zhao
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 030601 (2023)
https://doi.org/10.1116/6.0002494
Published: April 2023
View article titled, Effect of substrate rotation speed on AlGaN nanowire deep ultraviolet light-emitting diodes by molecular beam epitaxy
Open the PDF for Effect of substrate rotation speed on AlGaN nanowire deep ultraviolet light-emitting diodes by molecular beam epitaxy in another window
Journal Articles

Numerical simulations of heterojunction GaN nanopillar light emitting diodes

Zbigniew Lisik, Janusz Wozny, Ewa Raj, Jacek Podgorski
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 023204 (2023)
https://doi.org/10.1116/5.0121997
Published: March 2023
View article titled, Numerical simulations of heterojunction GaN nanopillar light emitting diodes
Open the PDF for Numerical simulations of heterojunction GaN nanopillar light emitting diodes in another window
Journal Articles

Observation of ground loop signals in GaN monolithically integrated devices

Xiao Ma, Hoi Wai Choi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 012207 (2023)
https://doi.org/10.1116/6.0002245
Published: January 2023
View article titled, Observation of ground loop signals in GaN monolithically integrated devices
Open the PDF for Observation of ground loop signals in GaN monolithically integrated devices in another window
Journal Articles

AlGaN nanowire deep ultraviolet LEDs with polarization enhanced tunnel junction and p-AlGaN layer by molecular beam epitaxy

FeaturedScilight
Mohammad Fazel Vafadar, Songrui Zhao
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 050602 (2022)
https://doi.org/10.1116/6.0002037
Published: September 2022
View article titled, AlGaN nanowire deep ultraviolet LEDs with polarization enhanced tunnel junction and p-AlGaN layer by molecular beam epitaxy
Open the PDF for AlGaN nanowire deep ultraviolet LEDs with polarization enhanced tunnel junction and p-AlGaN layer by molecular beam epitaxy in another window
Journal Articles

Fabrication of Cd-free ZnCuInS/ZnS based inverted quantum dot light-emitting diode: Considering substrate temperature effect on sputtered ZnO layer

Mohammad Mostafizur Rahman Biswas, Md. Faruk Hossain, Masahiro Morimoto, Shigeki Naka, Hiroyuki Okada
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 39, 063401 (2021)
https://doi.org/10.1116/6.0001365
Published: November 2021
View article titled, Fabrication of Cd-free ZnCuInS/ZnS based inverted quantum dot light-emitting diode: Considering substrate temperature effect on sputtered ZnO layer
Open the PDF for Fabrication of Cd-free ZnCuInS/ZnS based inverted quantum dot light-emitting diode: Considering substrate temperature effect on sputtered ZnO layer in another window
Includes: Supplementary data
Journal Articles

Selective lateral photoelectrochemical wet etching of InGaN nanorods

Chunyu Zhao, Xu Zhang, Chak Wah Tang, Jiannong Wang, Kei May Lau
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 38, 060602 (2020)
https://doi.org/10.1116/6.0000527
Published: October 2020
View article titled, Selective lateral photoelectrochemical wet etching of InGaN nanorods
Open the PDF for Selective lateral photoelectrochemical wet etching of InGaN nanorods in another window
Journal Articles

Direct molecular quantification of electronic disorder in N,N′-Di-[(1-naphthyl)-N,N′-diphenyl]-1,1′-biphenyl)-4,4′-diamine on Au(111)

Jiuyang Wang, Jingying Wang, Daniel B. Dougherty
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 38, 053401 (2020)
https://doi.org/10.1116/6.0000401
Published: August 2020
View article titled, Direct molecular quantification of electronic disorder in <em>N,N</em>′-Di-[(1-naphthyl)-<em>N,N</em>′-diphenyl]-1,1′-biphenyl)-4,4′-diamine on Au(111)
Open the PDF for Direct molecular quantification of electronic disorder in <em>N,N</em>′-Di-[(1-naphthyl)-<em>N,N</em>′-diphenyl]-1,1′-biphenyl)-4,4′-diamine on Au(111) in another window
Journal Articles

Implementation of the inductively coupled plasma etching processes for forming gallium nitride nanorods used in ultraviolet light-emitting diode technology

Marek Ekielski, Marek Wzorek, Krystyna Gołaszewska, Alina Domanowska, Andrzej Taube, Mariusz Sochacki
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 38, 042802 (2020)
https://doi.org/10.1116/6.0000133
Published: June 2020
View article titled, Implementation of the inductively coupled plasma etching processes for forming gallium nitride nanorods used in ultraviolet light-emitting diode technology
Open the PDF for Implementation of the inductively coupled plasma etching processes for forming gallium nitride nanorods used in ultraviolet light-emitting diode technology in another window
Journal Articles

Ultraviolet light-emitting diode arrays using Ga-doped ZnO as current spreading layer

Wu-Liang Bi, Wei-Hao Lee, Hsin-Hao Yeh, Meng-Chyi Wu
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 38, 010601 (2020)
https://doi.org/10.1116/1.5127064
Published: December 2019
View article titled, Ultraviolet light-emitting diode arrays using Ga-doped ZnO as current spreading layer
Open the PDF for Ultraviolet light-emitting diode arrays using Ga-doped ZnO as current spreading layer in another window
Journal Articles

Flexible InP based quantum dot light-emitting diodes using Ag nanowire-colorless polyimide composite electrode

Jong-Woong Kim, Jiwan Kim
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 04E101 (2017)
https://doi.org/10.1116/1.4984804
Published: June 2017
View article titled, Flexible InP based quantum dot light-emitting diodes using Ag nanowire-colorless polyimide composite electrode
Open the PDF for Flexible InP based quantum dot light-emitting diodes using Ag nanowire-colorless polyimide composite electrode in another window
Journal Articles

Controlling color emission of InGaN/AlGaN nanowire light-emitting diodes grown by molecular beam epitaxy

Editor’s Pick
Moab R. Philip, Dipayan D. Choudhary, Mehrdad Djavid, Md Nasiruddin Bhuyian, James Piao, Thi T. Pham, Durgamadhab Misra, Hieu P. T. Nguyen
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 02B108 (2017)
https://doi.org/10.1116/1.4977174
Published: March 2017
View article titled, Controlling color emission of InGaN/AlGaN nanowire light-emitting diodes grown by molecular beam epitaxy
Open the PDF for Controlling color emission of InGaN/AlGaN nanowire light-emitting diodes grown by molecular beam epitaxy in another window
Journal Articles

Structure compensation and illumination uniformity improvement through inkjet printing in organic light-emitting diode subpixels

Chin-Yen Lin, Li-Wen Wang, Kuan-Hsun Liao, Cheng-Yao Lo
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 020601 (2017)
https://doi.org/10.1116/1.4974932
Published: January 2017
View article titled, Structure compensation and illumination uniformity improvement through inkjet printing in organic light-emitting diode subpixels
Open the PDF for Structure compensation and illumination uniformity improvement through inkjet printing in organic light-emitting diode subpixels in another window
Journal Articles

Transparent and visible light-insensitive acrylic photoresist for negative tone optical lithography

Daniel J. Carbaugh, Savas Kaya, Faiz Rahman
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 011601 (2017)
https://doi.org/10.1116/1.4971198
Published: December 2016
View article titled, Transparent and visible light-insensitive acrylic photoresist for negative tone optical lithography
Open the PDF for Transparent and visible light-insensitive acrylic photoresist for negative tone optical lithography in another window