1-20 of 952
Heterostructures
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

4H-SiC layer with multiple trenches in lateral double-diffused metal-oxide-semiconductor transistors for high temperature and high voltage applications

Amir Sohrabi-Movahed, Ali Asghar Orouji
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 063201 (2023)
https://doi.org/10.1116/6.0002971
Published: November 2023
View article titled, 4H-SiC layer with multiple trenches in lateral double-diffused metal-oxide-semiconductor transistors for high temperature and high voltage applications
Open the PDF for 4H-SiC layer with multiple trenches in lateral double-diffused metal-oxide-semiconductor transistors for high temperature and high voltage applications in another window
Journal Articles

III–V semiconductor devices grown by metalorganic chemical vapor deposition—The development of the Swiss Army Knife for semiconductor epitaxial growth

Russell D. Dupuis
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 060803 (2023)
https://doi.org/10.1116/6.0003062
Published: October 2023
View article titled, III–V semiconductor devices grown by metalorganic chemical vapor deposition—The development of the Swiss Army Knife for semiconductor epitaxial growth
Open the PDF for III–V semiconductor devices grown by metalorganic chemical vapor deposition—The development of the Swiss Army Knife for semiconductor epitaxial growth in another window
Journal Articles

Simulation analyses of carrier dynamics in npn-type GaN-heterojunction bipolar transistors with different hole-concentration p-base layers

Akira Mase, Yusuke Iida, Masaya Takimoto, Yutaka Nikai, Takashi Egawa, Makoto Miyoshi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 052206 (2023)
https://doi.org/10.1116/6.0002577
Published: September 2023
View article titled, Simulation analyses of carrier dynamics in <em>npn</em>-type GaN-heterojunction bipolar transistors with different hole-concentration <em>p</em>-base layers
Open the PDF for Simulation analyses of carrier dynamics in <em>npn</em>-type GaN-heterojunction bipolar transistors with different hole-concentration <em>p</em>-base layers in another window
Journal Articles

Fabrication of plasma-reduced silver coupled with titanium dioxide nanoparticles for visible light-driven photocatalysis

Arantxa Danielle S. Montallana, Joven Paolo D. Angeles, Jinn P. Chu, Matthew P. Sherburne, Magdaleno R. Vasquez, Jr., Motoi Wada
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 042204 (2023)
https://doi.org/10.1116/6.0002510
Published: June 2023
View article titled, Fabrication of plasma-reduced silver coupled with titanium dioxide nanoparticles for visible light-driven photocatalysis
Open the PDF for Fabrication of plasma-reduced silver coupled with titanium dioxide nanoparticles for visible light-driven photocatalysis in another window
Journal Articles

Defect formation in InGaAs/AlSb/InAs memory devices

Aurelia Trevisan, Peter D. Hodgson, Dominic Lane, Manus Hayne, Paul M. Koenraad
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 044001 (2023)
https://doi.org/10.1116/6.0002677
Published: May 2023
View article titled, Defect formation in InGaAs/AlSb/InAs memory devices
Open the PDF for Defect formation in InGaAs/AlSb/InAs memory devices in another window
Journal Articles

Secondary ion mass spectrometry quantification: Do you remember when a factor of 2 was good enough?

Charles W. Magee, Temel H. Buyuklimanli
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 030803 (2023)
https://doi.org/10.1116/6.0002466
Published: April 2023
View article titled, Secondary ion mass spectrometry quantification: Do you remember when a factor of 2 was good enough?
Open the PDF for Secondary ion mass spectrometry quantification: Do you remember when a factor of 2 was good enough? in another window
Journal Articles

Characterization of GaN structures for power electronics by secondary ion mass spectrometry and atomic force microscope approach

Tarek Spelta, Marc Veillerot, Eugénie Martinez, Nicolas Chevalier, Denis Mariolle, Roselyne Templier, Bassem Salem, Pedro Fernandes Paes Pinto Rocha, Laura Vauche, Sarah Boubenia, Bérangère Hyot
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 034003 (2023)
https://doi.org/10.1116/6.0002573
Published: April 2023
View article titled, Characterization of GaN structures for power electronics by secondary ion mass spectrometry and atomic force microscope approach
Open the PDF for Characterization of GaN structures for power electronics by secondary ion mass spectrometry and atomic force microscope approach in another window
Journal Articles

Restoration of the original depth distribution from experimental SIMS profile using the depth resolution function in framework of RMR model

Yu. Kudriavtsev, R. Asomoza, K. D. Moiseev
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 024003 (2023)
https://doi.org/10.1116/6.0002302
Published: March 2023
View article titled, Restoration of the original depth distribution from experimental SIMS profile using the depth resolution function in framework of RMR model
Open the PDF for Restoration of the original depth distribution from experimental SIMS profile using the depth resolution function in framework of RMR model in another window
Journal Articles

Numerical simulations of heterojunction GaN nanopillar light emitting diodes

Zbigniew Lisik, Janusz Wozny, Ewa Raj, Jacek Podgorski
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 023204 (2023)
https://doi.org/10.1116/5.0121997
Published: March 2023
View article titled, Numerical simulations of heterojunction GaN nanopillar light emitting diodes
Open the PDF for Numerical simulations of heterojunction GaN nanopillar light emitting diodes in another window
Journal Articles

Fabrication, and Direct Current and cryogenic analysis of SF6-treated AlGaN/GaN Schottky barrier diodes

Quentin Fornasiero, Nicolas Defrance, Sylvie Lepilliet, Vanessa Avramovic, Yvon Cordier, Eric Frayssinet, Marie Lesecq, Nadir Idir, Jean-Claude De Jaeger
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 012202 (2023)
https://doi.org/10.1116/6.0002125
Published: December 2022
View article titled, Fabrication, and Direct Current and cryogenic analysis of SF<sub>6</sub>-treated AlGaN/GaN Schottky barrier diodes
Open the PDF for Fabrication, and Direct Current and cryogenic analysis of SF<sub>6</sub>-treated AlGaN/GaN Schottky barrier diodes in another window
Journal Articles

Observation of interfacial strain relaxation and electron beam damage thresholds in Al0.3In0.7N/GaN heterostructures by transmission electron microscopy

Keisuke Motoki, Zachary Engel, Christopher M. Matthews, Habib Ahmad, Timothy M. McCrone, Kohei Harada, W. Alan Doolittle
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 052210 (2022)
https://doi.org/10.1116/6.0001974
Published: September 2022
View article titled, Observation of interfacial strain relaxation and electron beam damage thresholds in Al<sub>0.3</sub>In<sub>0.7</sub>N/GaN heterostructures by transmission electron microscopy
Open the PDF for Observation of interfacial strain relaxation and electron beam damage thresholds in Al<sub>0.3</sub>In<sub>0.7</sub>N/GaN heterostructures by transmission electron microscopy in another window
Journal Articles

Improve photo-to-dark current ratio of p-Si/SiO2/n-Ga2O3 heterojunction solar-blind photodetector by inserting SiO2 barrier layer

Xu Yan, Xueqiang Ji, Jinjin Wang, Chao Lu, Zuyong Yan, Shengrun Hu, Sai Zhang, Peigang Li
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 052207 (2022)
https://doi.org/10.1116/5.0107495
Published: September 2022
View article titled, Improve photo-to-dark current ratio of p-Si/SiO<sub>2</sub>/n-Ga<sub>2</sub>O<sub>3</sub> heterojunction solar-blind photodetector by inserting SiO<sub>2</sub> barrier layer
Open the PDF for Improve photo-to-dark current ratio of p-Si/SiO<sub>2</sub>/n-Ga<sub>2</sub>O<sub>3</sub> heterojunction solar-blind photodetector by inserting SiO<sub>2</sub> barrier layer in another window
Journal Articles

Thermal-field emission from cones and wires

Kevin L. Jensen, Michael S. McDonald, Mia K. Dhillon, Daniel Finkenstadt, Andrew Shabaev, Michael Osofsky
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 022801 (2022)
https://doi.org/10.1116/6.0001656
Published: January 2022
View article titled, Thermal-field emission from cones and wires
Open the PDF for Thermal-field emission from cones and wires in another window
Journal Articles

Photoinduced carrier transport mechanism in pn- and nn-GaN/GaON heterojunctions

Xiaojun Sun, Chao Wu, Yachao Wang, Daoyou Guo
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 012204 (2022)
https://doi.org/10.1116/6.0001601
Published: January 2022
View article titled, Photoinduced carrier transport mechanism in <em>pn</em>- and <em>nn</em>-GaN/GaON heterojunctions
Open the PDF for Photoinduced carrier transport mechanism in <em>pn</em>- and <em>nn</em>-GaN/GaON heterojunctions in another window
Journal Articles

Method to create cuprate tunnel junctions with atomically sharp interfaces

Anthony T. Bollinger, Xi He, Xiaotao Xu, Xiaoyan Shi, Ivan Božović
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 015001 (2022)
https://doi.org/10.1116/6.0001487
Published: December 2021
View article titled, Method to create cuprate tunnel junctions with atomically sharp interfaces
Open the PDF for Method to create cuprate tunnel junctions with atomically sharp interfaces in another window
Journal Articles

Enhancement of thermionic emission and conversion characteristics using polarization- and band-engineered n-type AlGaN/GaN cathodes

Shigeya Kimura, Hisashi Yoshida, Hisao Miyazaki, Takuya Fujimoto, Akihisa Ogino
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 39, 062207 (2021)
https://doi.org/10.1116/6.0001357
Published: November 2021
View article titled, Enhancement of thermionic emission and conversion characteristics using polarization- and band-engineered n-type AlGaN/GaN cathodes
Open the PDF for Enhancement of thermionic emission and conversion characteristics using polarization- and band-engineered n-type AlGaN/GaN cathodes in another window
Journal Articles

Influences of etching chemical parameters on AlGaN/GaN electrical degradation in power devices

Frédéric Le Roux, Nicolas Possémé, Pauline Burtin
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 39, 063201 (2021)
https://doi.org/10.1116/6.0001130
Published: October 2021
View article titled, Influences of etching chemical parameters on AlGaN/GaN electrical degradation in power devices
Open the PDF for Influences of etching chemical parameters on AlGaN/GaN electrical degradation in power devices in another window
Journal Articles

Lithium source for focused ion beam implantation and analysis

Michael Titze, Daniel L. Perry, Elizabeth A. Auden, Jose L. Pacheco, John B. S. Abraham, Edward S. Bielejec
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 39, 012802 (2021)
https://doi.org/10.1116/6.0000645
Published: January 2021
View article titled, Lithium source for focused ion beam implantation and analysis
Open the PDF for Lithium source for focused ion beam implantation and analysis in another window
Journal Articles

Evidence of improved power conversion efficiency in lead-free CsGeI3 based perovskite solar cell heterostructure via scaps simulation

Abhishek Raj, Manish Kumar, Hemant Bherwani, Ankit Gupta, Avneesh Anshul
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 39, 012401 (2021)
https://doi.org/10.1116/6.0000718
Published: December 2020
View article titled, Evidence of improved power conversion efficiency in lead-free CsGeI<sub>3</sub> based perovskite solar cell heterostructure via <sc>scaps</sc> simulation
Open the PDF for Evidence of improved power conversion efficiency in lead-free CsGeI<sub>3</sub> based perovskite solar cell heterostructure via <sc>scaps</sc> simulation in another window
Includes: Supplementary data
Journal Articles

Superhydrophobic SnO2 nanowire/graphene heterostructure-based ultraviolet detectors

Youngsoo Kang, Sanghyun Ju
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 38, 062210 (2020)
https://doi.org/10.1116/6.0000565
Published: November 2020
View article titled, Superhydrophobic SnO<sub>2</sub> nanowire/graphene heterostructure-based ultraviolet detectors
Open the PDF for Superhydrophobic SnO<sub>2</sub> nanowire/graphene heterostructure-based ultraviolet detectors in another window