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Journal Articles

Tracing degradation mechanisms of epitaxially grown GaAsSb on InP by InSb formation at elevated temperatures

Editor’s Pick
Leonid Miroshnik, Brian D. Rummel, Darryl M. Shima, Andrew Li, Ganesh Balakrishnan, Talid Sinno, Sang M. Han
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 43, 022215 (2025)
https://doi.org/10.1116/6.0004324
Published: March 2025
View articletitled, Tracing degradation mechanisms of epitaxially grown GaAsSb on InP by InSb formation at elevated temperatures
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Journal Articles

Exploring SiC CVD growth parameters compatible with remote epitaxy

Daniel J. Pennachio, Jenifer R. Hajzus, Rachael L. Myers-Ward
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 43, 022205 (2025)
https://doi.org/10.1116/6.0004106
Published: February 2025
View articletitled, Exploring SiC CVD growth parameters compatible with remote epitaxy
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Journal Articles

Cost-effective fabrication of RF AlGaN/GaN HEMTs on surface activated bonding-bonded SiC-SiC substrate

Guanjun Jing, Xiangjie Xing, Dongguo Zhang, Fengwen Mu, Sen Huang, Ke Wei, Qimeng Jiang, Xinhua Wang, Xinyu Liu
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 43, 012205 (2025)
https://doi.org/10.1116/6.0004066
Published: January 2025
View articletitled, Cost-effective fabrication of RF AlGaN/GaN HEMTs on surface activated bonding-bonded SiC-SiC substrate
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Journal Articles

Tapered quantum cascade lasers with isolated channel emitting at 9 μm

Chenyang Wan, Yuzhe Lin, Yuan Ma, Lijun Ge, Zixian Wang, Fengxin Dong, Xuyan Zhou, Jinchuan Zhang, Fengqi Liu, Wanhua Zheng
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 43, 012202 (2025)
https://doi.org/10.1116/6.0004059
Published: January 2025
View articletitled, Tapered quantum cascade lasers with isolated channel emitting at 9 μm
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Journal Articles

Anomalous resistive switching effect in La0.8Ca0.2MnO3/Nb:SrTiO3 structure

Zhiquan Wang, Chengang Dong, Xin Wang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 064004 (2024)
https://doi.org/10.1116/6.0004095
Published: November 2024
View articletitled, Anomalous resistive switching effect in La0.8Ca0.2MnO3/Nb:SrTiO3 structure
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Journal Articles

Current–voltage characteristics of Ag/Nb:SrTiO3/Ag and Au/Nb:SrTiO3/Ag heterostructures

Weibai Bian, Chen Han, Jiqiang Jia, Xiaoqin Liu
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 054005 (2024)
https://doi.org/10.1116/6.0003843
Published: September 2024
View articletitled, Current–voltage characteristics of Ag/Nb:SrTiO3/Ag and Au/Nb:SrTiO3/Ag heterostructures
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Journal Articles

Study on geometry-dependent n+-InGaN regrowth via MOCVD for AlN/GaN ohmic contact application

Editor’s Pick
Yu-Xi Zhou, Jie-Jie Zhu, Jing-Shu Guo, Ling-Jie Qin, Bo-Wen Zhang, Meng-Di Li, Ming-Chen Zhang, Xiao-Hua Ma
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 052201 (2024)
https://doi.org/10.1116/6.0003690
Published: August 2024
View articletitled, Study on geometry-dependent n+-InGaN regrowth via MOCVD for AlN/GaN ohmic contact application
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Journal Articles

GaAs/GeSn/Ge n–i–p diodes and light emitting diodes formed via grafting

Jie Zhou, Haibo Wang, Po Rei Huang, Shengqiang Xu, Yang Liu, Jiarui Gong, Jianping Shen, Daniel Vicent, Samuel Haessly, Alireza Abrand, Parsian K. Mohseni, Munho Kim, Shui-Qing Yu, Guo-En Chang, Xiao Gong, Zhenqiang Ma
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 042213 (2024)
https://doi.org/10.1116/6.0003619
Published: July 2024
View articletitled, GaAs/GeSn/Ge n–i–p diodes and light emitting diodes formed via grafting
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Journal Articles

Group-IV based pin photodetectors for C-band application

Michael Oehme, Maurice Wanitzek, Christian Spieth, Lukas Seidel, Michael Hack, Erich Kasper, Daniel Schwarz
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 033202 (2024)
https://doi.org/10.1116/6.0003556
Published: April 2024
View articletitled, Group-IV based pin photodetectors for C-band application
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Journal Articles

Wet and dry etching of ultrawide bandgap LiGa5O8 and LiGaO2

Vijay Gopal Thirupakuzi Vangipuram, Kaitian Zhang, Hongping Zhao
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 032204 (2024)
https://doi.org/10.1116/6.0003450
Published: April 2024
View articletitled, Wet and dry etching of ultrawide bandgap LiGa5O8 and LiGaO2
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Journal Articles

Growth of CdS heterojunctions on Cd0.9Zn0.1Te single crystals with H2S

Hao Yuan, T. Tiedje, Jingye Chen, Hui Wang, Brad Aitchison, Pawan Kumar, Yuxin Song
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 012206 (2024)
https://doi.org/10.1116/6.0003265
Published: January 2024
View articletitled, Growth of CdS heterojunctions on Cd0.9Zn0.1Te single crystals with H2S
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Journal Articles

Room-temperature nanostructured PbSe/CdSe mid-infrared photodetector: Annealing effects

Milad Rastkar Mirzaei, Zhisheng Shi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 012204 (2024)
https://doi.org/10.1116/6.0003193
Published: January 2024
View articletitled, Room-temperature nanostructured PbSe/CdSe mid-infrared photodetector: Annealing effects
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Journal Articles

4H-SiC layer with multiple trenches in lateral double-diffused metal-oxide-semiconductor transistors for high temperature and high voltage applications

Amir Sohrabi-Movahed, Ali Asghar Orouji
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 063201 (2023)
https://doi.org/10.1116/6.0002971
Published: November 2023
View articletitled, 4H-SiC layer with multiple trenches in lateral double-diffused metal-oxide-semiconductor transistors for high temperature and high voltage applications
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Journal Articles

III–V semiconductor devices grown by metalorganic chemical vapor deposition—The development of the Swiss Army Knife for semiconductor epitaxial growth

Russell D. Dupuis
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 060803 (2023)
https://doi.org/10.1116/6.0003062
Published: October 2023
View articletitled, III–V semiconductor devices grown by metalorganic chemical vapor deposition—The development of the Swiss Army Knife for semiconductor epitaxial growth
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Journal Articles

Simulation analyses of carrier dynamics in npn-type GaN-heterojunction bipolar transistors with different hole-concentration p-base layers

Akira Mase, Yusuke Iida, Masaya Takimoto, Yutaka Nikai, Takashi Egawa, Makoto Miyoshi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 052206 (2023)
https://doi.org/10.1116/6.0002577
Published: September 2023
View articletitled, Simulation analyses of carrier dynamics in npn-type GaN-heterojunction bipolar transistors with different hole-concentration p-base layers
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Journal Articles

Fabrication of plasma-reduced silver coupled with titanium dioxide nanoparticles for visible light-driven photocatalysis

Arantxa Danielle S. Montallana, Joven Paolo D. Angeles, Jinn P. Chu, Matthew P. Sherburne, Magdaleno R. Vasquez, Jr., Motoi Wada
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 042204 (2023)
https://doi.org/10.1116/6.0002510
Published: June 2023
View articletitled, Fabrication of plasma-reduced silver coupled with titanium dioxide nanoparticles for visible light-driven photocatalysis
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Journal Articles

Secondary ion mass spectrometry quantification: Do you remember when a factor of 2 was good enough?

Charles W. Magee, Temel H. Buyuklimanli
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 030803 (2023)
https://doi.org/10.1116/6.0002466
Published: April 2023
View articletitled, Secondary ion mass spectrometry quantification: Do you remember when a factor of 2 was good enough?
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Journal Articles

Characterization of GaN structures for power electronics by secondary ion mass spectrometry and atomic force microscope approach

Tarek Spelta, Marc Veillerot, Eugénie Martinez, Nicolas Chevalier, Denis Mariolle, Roselyne Templier, Bassem Salem, Pedro Fernandes Paes Pinto Rocha, Laura Vauche, Sarah Boubenia, Bérangère Hyot
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 034003 (2023)
https://doi.org/10.1116/6.0002573
Published: April 2023
View articletitled, Characterization of GaN structures for power electronics by secondary ion mass spectrometry and atomic force microscope approach
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Journal Articles

Restoration of the original depth distribution from experimental SIMS profile using the depth resolution function in framework of RMR model

Yu. Kudriavtsev, R. Asomoza, K. D. Moiseev
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 024003 (2023)
https://doi.org/10.1116/6.0002302
Published: March 2023
View articletitled, Restoration of the original depth distribution from experimental SIMS profile using the depth resolution function in framework of RMR model
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Journal Articles

Numerical simulations of heterojunction GaN nanopillar light emitting diodes

Zbigniew Lisik, Janusz Wozny, Ewa Raj, Jacek Podgorski
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 023204 (2023)
https://doi.org/10.1116/5.0121997
Published: March 2023
View articletitled, Numerical simulations of heterojunction GaN nanopillar light emitting diodes
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