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Journal Articles

Thermally stable radio frequency power and noise behaviors of AlGaN/GaN high electron mobility transistor without voltage-blocking buffer layer design

Chong-Rong Huang, Hsien-Chin Chiu, Hsuan-Ling Kao, Hsiang-Chun Wang, Shinn-Yn Lin, Chih-Tien Chen, Kuo-Jen Chang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 043201 (2024)
https://doi.org/10.1116/6.0003551
Published: May 2024
View article titled, Thermally stable radio frequency power and noise behaviors of AlGaN/GaN high electron mobility transistor without voltage-blocking buffer layer design
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Journal Articles

Fabrication of suspended antenna-coupled nanothermocouples

Gergo P. Szakmany, Alexei O. Orlov, Gary H. Bernstein, Wolfgang Porod
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 37, 052201 (2019)
https://doi.org/10.1116/1.5113506
Published: July 2019
View article titled, Fabrication of suspended antenna-coupled nanothermocouples
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Journal Articles

Spectral response characteristics of transmission-mode alkali telluride photocathodes working from vacuum-ultraviolet to ultraviolet band

Xiang Zhang, Yijun Zhang, Yunsheng Qian, Cheng Feng, Jingzhi Zhang, Yunlong Jiang, Zhiyun Pan
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 061202 (2017)
https://doi.org/10.1116/1.5006049
Published: October 2017
View article titled, Spectral response characteristics of transmission-mode alkali telluride photocathodes working from vacuum-ultraviolet to ultraviolet band
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Journal Articles

Circuit design considerations for current preamplifiers for scanning tunneling microscopy

Jacob P. Petersen, S. Alex Kandel
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 033201 (2017)
https://doi.org/10.1116/1.4981017
Published: April 2017
View article titled, Circuit design considerations for current preamplifiers for scanning tunneling microscopy
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Journal Articles

Modification of the electronic properties of magic In clusters on Si(111)7 × 7 by different environments

Martin Franz, Julia Schmermbeck, Mario Dähne
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 04J101 (2016)
https://doi.org/10.1116/1.4947265
Published: April 2016
View article titled, Modification of the electronic properties of magic In clusters on Si(111)7 × 7 by different environments
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Journal Articles

V-band monolithic microwave integrated circuit with continuous wave output power of >23.5 dBm using conventional AlGaN/GaN-on-Si structure

Dong-Hwan Kim, Su-Keun Eom, Myoung-Jin Kang, Jun-Seok Jeong, Kwang-Seok Seo, Ho-Young Cha
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 040602 (2016)
https://doi.org/10.1116/1.4947005
Published: April 2016
View article titled, V-band monolithic microwave integrated circuit with continuous wave output power of >23.5 dBm using conventional AlGaN/GaN-on-Si structure
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Journal Articles

Normally-off matrix layout p-GaN gate AlGaN/GaN power HEMT with a through-substrate via process

Hsien-Chin Chiu, Li-Yi Peng, Chih-Wei Yang, Hsiang-Chun Wang, Kai-Di Mai, Hsuan-Ling Kao, Chien-Kai Tung, Tsung-Cheng Chang, Schang-jing Hon, Jia-Ching Lin, Kuo-Jen Chang, Yi-Cheng Cheng
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 021205 (2016)
https://doi.org/10.1116/1.4943573
Published: March 2016
View article titled, Normally-off matrix layout p-GaN gate AlGaN/GaN power HEMT with a through-substrate via process
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Journal Articles

Improvement of drain breakdown voltage with a back-side gate on AlGaN/GaN high electron mobility transistors

Ya-Hsi Hwang, Chen Dong, Yue-Ling Hsieh, Weidi Zhu, Shihyun Ahn, Fan Ren, Stephen J. Pearton, Ivan I. Kravchenko
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 042201 (2015)
https://doi.org/10.1116/1.4922022
Published: June 2015
View article titled, Improvement of drain breakdown voltage with a back-side gate on AlGaN/GaN high electron mobility transistors
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Journal Articles

Characteristics of gate leakage current and breakdown voltage of AlGaN/GaN high electron mobility transistors after postprocess annealing

Lu Liu, Yuyin Xi, Shihyun Ahn, Fan Ren, Brent P. Gila, Stephen J. Pearton, Ivan I. Kravchenko
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 052201 (2014)
https://doi.org/10.1116/1.4891168
Published: July 2014
View article titled, Characteristics of gate leakage current and breakdown voltage of AlGaN/GaN high electron mobility transistors after postprocess annealing
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Journal Articles

Alkali azide based growth of high quantum efficiency photocathodes

Luca Cultrera, Mark Brown, Siddharth Karkare, William Schaff, Ivan Bazarov, Bruce Dunham
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 031211 (2014)
https://doi.org/10.1116/1.4876184
Published: May 2014
View article titled, Alkali azide based growth of high quantum efficiency photocathodes
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Journal Articles

Dependence of structural and electrical properties of AlGaN/GaN HEMT on Si(111) on buffer growth conditions by MBE

Partha Mukhopadhyay, Subhra Chowdhury, Andrew Wowchak, Amir Dabiran, Peter Chow, Dhrubes Biswas
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 31, 03C132 (2013)
https://doi.org/10.1116/1.4803836
Published: May 2013
View article titled, Dependence of structural and electrical properties of AlGaN/GaN HEMT on Si(111) on buffer growth conditions by MBE
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Journal Articles

Evidence of long-wave-infrared excited state transition at high temperature (200 K) in 35-layer In0.50Ga0.50As/GaAs quantum dot infrared photodetector

Sourav Adhikary, Subhananda Chakrabarti
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 31, 03C128 (2013)
https://doi.org/10.1116/1.4801791
Published: April 2013
View article titled, Evidence of long-wave-infrared excited state transition at high temperature (200 K) in 35-layer In<sub>0.50</sub>Ga<sub>0.50</sub>As/GaAs quantum dot infrared photodetector
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Journal Articles

Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors

Lu Liu, Chien-Fong Lo, Yuyin Xi, Yuxi Wang, Fan Ren, Stephen J. Pearton, Hong-Yeol Kim, Jihyun Kim, Robert C. Fitch, Dennis E. Walker, Jr., Kelson D. Chabak, James K. Gillespie, Stephen E. Tetlak, Glen D. Via, Antonio Crespo, Ivan I. Kravchenko
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 31, 022201 (2013)
https://doi.org/10.1116/1.4788904
Published: January 2013
View article titled, Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors
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Journal Articles

Ultra-compact, high-yield intra-cavity contacts for GaAs/AlGaAs-based vertical-cavity surface-emitting lasers

Chin-Han Lin, Brian J. Thibeault, Yan Zheng, Mark J. W. Rodwell, Larry A. Coldren, Alok Mehta, Anis Husain
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 31, 011205 (2013)
https://doi.org/10.1116/1.4769856
Published: December 2012
View article titled, Ultra-compact, high-yield intra-cavity contacts for GaAs/AlGaAs-based vertical-cavity surface-emitting lasers
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Journal Articles

Characteristic comparison of AlGaN/GaN enhancement-mode HEMTs with CHF3 and CF4 surface treatment

C. H. Chen, C. W. Yang, H. C. Chiu, Jeffrey. S. Fu
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 30, 021201 (2012)
https://doi.org/10.1116/1.3680115
Published: February 2012
View article titled, Characteristic comparison of AlGaN/GaN enhancement-mode HEMTs with CHF<sub>3</sub> and CF<sub>4</sub> surface treatment
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Journal Articles

Investigating the effect of off-state stress on trap densities in AlGaN/GaN high electron mobility transistors

L. Liu, F. Ren, S. J. Pearton, R. C. Fitch, D. E. Walker, K. D. Chabak, J. K. Gillespie, M. Kossler, M. Trejo, David Via, A. Crespo
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 060603 (2011)
https://doi.org/10.1116/1.3660396
Published: November 2011
View article titled, Investigating the effect of off-state stress on trap densities in AlGaN/GaN high electron mobility transistors
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Journal Articles

Fabrication of nanogaps by a progressive electromigration technique using wires of various thicknesses

Swatilekha Saha, Guoguang Qian, Kim M. Lewis
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 061802 (2011)
https://doi.org/10.1116/1.3647908
Published: October 2011
View article titled, Fabrication of nanogaps by a progressive electromigration technique using wires of various thicknesses
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Journal Articles

Comparison of DC performance of Pt/Ti/Au- and Ni/Au-gated AlGaN/GaN high electron mobility transistors

Lu Liu, Chien-Fong Lo, Tsung-Sheng Kang, Fan Ren, S. J. Pearton, I. I. Kravchenko, O. Laboutin, Yu Cao, Wayne J. Johnson
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 042202 (2011)
https://doi.org/10.1116/1.3607601
Published: July 2011
View article titled, Comparison of DC performance of Pt/Ti/Au- and Ni/Au-gated AlGaN/GaN high electron mobility transistors
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Journal Articles

Development of a vacuum transistor using hafnium nitride field emitter arrays

Keita Ikeda, Wataru Ohue, Keisuke Endo, Yasuhito Gotoh, Hiroshi Tsuji
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 02B116 (2011)
https://doi.org/10.1116/1.3565430
Published: March 2011
View article titled, Development of a vacuum transistor using hafnium nitride field emitter arrays
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Journal Articles

Ex situ tunnel junction process technique characterized by Coulomb blockade thermometry

M. Prunnila, M. Meschke, D. Gunnarsson, S. Enouz-Vedrenne, J. M. Kivioja, J. P. Pekola
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, 1026–1029 (2010)
https://doi.org/10.1116/1.3490406
Published: September 2010
View article titled, <em>Ex situ</em> tunnel junction process technique characterized by Coulomb blockade thermometry
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