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Journal Articles

Novel process integration flow of germanium-on-silicon FinFETs for low-power technologies

Sumit Choudhary, Midathala Yogesh, Daniel Schwarz, Hannes S. Funk, Subrata Ghosh, Satinder K. Sharma, Jörg Schulze, Kenneth E. Gonsalves
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 052203 (2023)
https://doi.org/10.1116/6.0002767
Published: August 2023
View article titled, Novel process integration flow of germanium-on-silicon FinFETs for low-power technologies
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Includes: Supplementary data
Journal Articles

Plasma processing and annealing for defect management at SiO2/Si interface

Shota Nunomura, Takayoshi Tsutsumi, Isao Sakata, Masaru Hori
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 052202 (2023)
https://doi.org/10.1116/6.0002822
Published: August 2023
View article titled, Plasma processing and annealing for defect management at SiO<sub>2</sub>/Si interface
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Journal Articles

Rapid detection of radiation susceptible regions in electronics

Sergei P. Stepanoff, Aman Haque, Fan Ren, Stephen Pearton, Douglas E. Wolfe
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 044005 (2023)
https://doi.org/10.1116/6.0002689
Published: June 2023
View article titled, Rapid detection of radiation susceptible regions in electronics
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Journal Articles

Characterization of GaN structures for power electronics by secondary ion mass spectrometry and atomic force microscope approach

Tarek Spelta, Marc Veillerot, Eugénie Martinez, Nicolas Chevalier, Denis Mariolle, Roselyne Templier, Bassem Salem, Pedro Fernandes Paes Pinto Rocha, Laura Vauche, Sarah Boubenia, Bérangère Hyot
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 034003 (2023)
https://doi.org/10.1116/6.0002573
Published: April 2023
View article titled, Characterization of GaN structures for power electronics by secondary ion mass spectrometry and atomic force microscope approach
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Journal Articles

Radiation damage in GaN/AlGaN and SiC electronic and photonic devices

S. J. Pearton, Xinyi Xia, Fan Ren, Md Abu Jafar Rasel, Sergei Stepanoff, Nahid Al-Mamun, Aman Haque, Douglas E. Wolfe
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 030802 (2023)
https://doi.org/10.1116/6.0002628
Published: April 2023
View article titled, Radiation damage in GaN/AlGaN and SiC electronic and photonic devices
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Journal Articles

Evaluation of dry stored disposable sensor strip on rapid SARS-CoV-2 detection platform

Chao-Ching Chiang, Chan-Wen Chiu, Fan Ren, Cheng-Tse Tsai, Yu-Te Liao, Josephine F. Esquivel-Upshaw, Stephen J. Pearton
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 012204 (2023)
https://doi.org/10.1116/6.0002293
Published: December 2022
View article titled, Evaluation of dry stored disposable sensor strip on rapid SARS-CoV-2 detection platform
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Journal Articles

Trilayer process for T-gate and Γ-gate lithography using ternary developer and proximity effect correction superposition

Leonidas E. Ocola, James Bucchignano, Simon Dawes, Andrei Fustochenko
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 062605 (2022)
https://doi.org/10.1116/6.0002121
Published: November 2022
View article titled, Trilayer process for <em>T</em>-gate and Γ-gate lithography using ternary developer and proximity effect correction superposition
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Includes: Supplementary data
Journal Articles

Gamma radiation on gallium nitride high electron mobility transistors at ON, OFF, and prestressed conditions

Md Abu Jafar Rasel, Sergei Stepanoff, Aman Haque, Douglas E. Wolfe, Fan Ren, Stephen J. Pearton
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 063204 (2022)
https://doi.org/10.1116/6.0002216
Published: November 2022
View article titled, Gamma radiation on gallium nitride high electron mobility transistors at ON, OFF, and prestressed conditions
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Journal Articles

Multiple connected artificial synapses based on electromigrated Au nanogaps

Keita Sakai, Mamiko Yagi, Mitsuki Ito, Jun-ichi Shirakashi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 053202 (2022)
https://doi.org/10.1116/6.0002081
Published: September 2022
View article titled, Multiple connected artificial synapses based on electromigrated Au nanogaps
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Journal Articles

Application of deep-learning based techniques for automatic metrology on scanning and transmission electron microscopy images

J. Baderot, M. Grould, D. Misra, N. Clément, A. Hallal, S. Martinez, J. Foucher
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 054003 (2022)
https://doi.org/10.1116/6.0001988
Published: September 2022
View article titled, Application of deep-learning based techniques for automatic metrology on scanning and transmission electron microscopy images
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Journal Articles

Device feasibility and performance improvement methodologies for thin film transistors using In-Ga-Sn-O channels prepared by atomic-layer deposition

Shin-Ho Noh, Hyo-Eun Kim, Young-Ha Kwon, Nak-Jin Seong, Kyu-Jeong Choi, Sung-Min Yoon
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 040602 (2022)
https://doi.org/10.1116/6.0001945
Published: June 2022
View article titled, Device feasibility and performance improvement methodologies for thin film transistors using In-Ga-Sn-O channels prepared by atomic-layer deposition
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Journal Articles

Designing MoS2 channel properties for analog memory in neuromorphic applications

Vladislav Kurtash, Sebastian Thiele, Sobin Mathew, Heiko O. Jacobs, Joerg Pezoldt
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 030602 (2022)
https://doi.org/10.1116/6.0001815
Published: April 2022
View article titled, Designing MoS<sub>2</sub> channel properties for analog memory in neuromorphic applications
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Journal Articles

Low trap density of oxygen-rich HfO2/GaN interface for GaN MIS-HEMT applications

Wei-Chih Cheng, Jiaqi He, Minghao He, Zepeng Qiao, Yang Jiang, Fangzhou Du, Xiang Wang, Haimin Hong, Qing Wang, Hongyu Yu
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 022212 (2022)
https://doi.org/10.1116/6.0001654
Published: March 2022
View article titled, Low trap density of oxygen-rich HfO<sub>2</sub>/GaN interface for GaN MIS-HEMT applications
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Journal Articles

Rapid SARS-CoV-2 diagnosis using disposable strips and a metal-oxide-semiconductor field-effect transistor platform

Chan-Wen Chiu, Minghan Xian, Jenna L. Stephany, Xinyi Xia, Chao-Ching Chiang, Fan Ren, Cheng-Tse Tsai, Siang-Sin Shan, Yu-Te Liao, Josephine F. Esquivel-Upshaw, Santosh R. Rananaware, Long T. Nguyen, Nicolas C. Macaluso, Piyush K. Jain, Melanie N. Cash, Carla N. Mavian, Marco Salemi, Marino E. Leon, Chin-Wei Chang, Jenshan Lin, Stephen J. Pearton
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 023204 (2022)
https://doi.org/10.1116/6.0001615
Published: February 2022
View article titled, Rapid SARS-CoV-2 diagnosis using disposable strips and a metal-oxide-semiconductor field-effect transistor platform
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Journal Articles

Digital biosensor for human cerebrospinal fluid detection with single-use sensing strips

Minghan Xian, Chan-Wen Chiu, Patrick H. Carey, IV, Chaker Fares, Liya Chen, Rena Wu, Fan Ren, Cheng-Tse Tsai, Siang-Sin Shan, Yu-Te Liao, Josephine F. Esquivel-Upshaw, Stephen J. Pearton
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 023202 (2022)
https://doi.org/10.1116/6.0001576
Published: February 2022
View article titled, Digital biosensor for human cerebrospinal fluid detection with single-use sensing strips
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Journal Articles

Characterization of nanoscale vertical-channel charge-trap memory thin film transistors using oxide semiconducting active and trap layers

Soo-Hyun Bae, Hyun-Joo Ryoo, Nak-Jin Seong, Kyu-Jeong Choi, Gi-Heon Kim, Sung-Min Yoon
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 39, 043202 (2021)
https://doi.org/10.1116/6.0001049
Published: June 2021
View article titled, Characterization of nanoscale vertical-channel charge-trap memory thin film transistors using oxide semiconducting active and trap layers
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Journal Articles

Titanium diffusion in Si/Al2O3/Ti/Au metal oxide semiconductor capacitors

Roberta Hawkins, Anuj Jain, Sohum Kulkarni, Chadwin Young
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 39, 042201 (2021)
https://doi.org/10.1116/6.0001045
Published: June 2021
View article titled, Titanium diffusion in Si/Al<sub>2</sub>O<sub>3</sub>/Ti/Au metal oxide semiconductor capacitors
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Includes: Supplementary data
Journal Articles

Characterization of GeO2 films formed on Ge substrate using high pressure oxidation

Juhyun Bae, Ilsub Chung
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 39, 043201 (2021)
https://doi.org/10.1116/6.0000963
Published: June 2021
View article titled, Characterization of GeO<sub>2</sub> films formed on Ge substrate using high pressure oxidation
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Journal Articles

Fast SARS-CoV-2 virus detection using disposable cartridge strips and a semiconductor-based biosensor platform

Minghan Xian, Hao Luo, Xinyi Xia, Chaker Fares, Patrick H. Carey, IV, Chan-Wen Chiu, Fan Ren, Siang-Sin Shan, Yu-Te Liao, Shu-Min Hsu, Josephine F. Esquivel-Upshaw, Chin-Wei Chang, Jenshan Lin, Steven C. Ghivizzani, Stephen J. Pearton
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 39, 033202 (2021)
https://doi.org/10.1116/6.0001060
Published: May 2021
View article titled, Fast SARS-CoV-2 virus detection using disposable cartridge strips and a semiconductor-based biosensor platform
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Journal Articles

Fully vertical gallium nitride trench MOSFETs fabricated with metal-free gate first process

Kevin Dannecker, Jens Baringhaus
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 39, 032204 (2021)
https://doi.org/10.1116/6.0000980
Published: April 2021
View article titled, Fully vertical gallium nitride trench MOSFETs fabricated with metal-free gate first process
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