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Journal Articles

Radio frequency side-gate nanoscale vacuum channel triode

Zhihua Shen, Qiaoning Li, Bin Ge, Xiao Wang, Shengli Wu
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 052801 (2024)
https://doi.org/10.1116/6.0003823
Published: August 2024
View article titled, Radio frequency side-gate nanoscale vacuum channel triode
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Journal Articles

Characteristics of β-(AlxGa1−x)2O3/Ga2O3 dual-metal gate modulation-doped field-effect transistors simulated by TCAD

Xiaole Jia, Yibo Wang, Cizhe Fang, Bochang Li, Zhengdong Luo, Yan Liu, Yue Hao, Genquan Han
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 032207 (2024)
https://doi.org/10.1116/6.0003502
Published: April 2024
View article titled, Characteristics of <em>β</em>-(Al<em><sub>x</sub></em>Ga<sub>1−<em>x</em></sub>)<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> dual-metal gate modulation-doped field-effect transistors simulated by TCAD
Open the PDF for Characteristics of <em>β</em>-(Al<em><sub>x</sub></em>Ga<sub>1−<em>x</em></sub>)<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> dual-metal gate modulation-doped field-effect transistors simulated by TCAD in another window
Journal Articles

Investigation of silicon-on-insulator back-gate nano vacuum channel transistor array

Kaifang Weng, Changsheng Shen, Zhaofu Chen, Ningfeng Bai
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 023201 (2024)
https://doi.org/10.1116/6.0003346
Published: February 2024
View article titled, Investigation of silicon-on-insulator back-gate nano vacuum channel transistor array
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Journal Articles

Novel process integration flow of germanium-on-silicon FinFETs for low-power technologies

Sumit Choudhary, Midathala Yogesh, Daniel Schwarz, Hannes S. Funk, Subrata Ghosh, Satinder K. Sharma, Jörg Schulze, Kenneth E. Gonsalves
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 052203 (2023)
https://doi.org/10.1116/6.0002767
Published: August 2023
View article titled, Novel process integration flow of germanium-on-silicon FinFETs for low-power technologies
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Includes: Supplementary data
Journal Articles

Simulation of a multichannel vacuum transistor with high cut-off frequency

Zhihua Shen, Xiao Wang, Bin Ge, Shengli Wu, Jinshou Tian
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 043203 (2023)
https://doi.org/10.1116/6.0002675
Published: July 2023
View article titled, Simulation of a multichannel vacuum transistor with high cut-off frequency
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Journal Articles

Gamma radiation on gallium nitride high electron mobility transistors at ON, OFF, and prestressed conditions

Md Abu Jafar Rasel, Sergei Stepanoff, Aman Haque, Douglas E. Wolfe, Fan Ren, Stephen J. Pearton
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 063204 (2022)
https://doi.org/10.1116/6.0002216
Published: November 2022
View article titled, Gamma radiation on gallium nitride high electron mobility transistors at ON, OFF, and prestressed conditions
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Journal Articles

Physics based model of an AlGaN/GaN vacuum field effect transistor

Editor’s Pick
N. Hernandez, M. Cahay, J. Ludwick, T. Back, H. Hall, J. O’Mara
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 053201 (2022)
https://doi.org/10.1116/6.0001959
Published: September 2022
View article titled, Physics based model of an AlGaN/GaN vacuum field effect transistor
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Includes: Supplementary data
Journal Articles

Fully vertical gallium nitride trench MOSFETs fabricated with metal-free gate first process

Editor’s Pick
Kevin Dannecker, Jens Baringhaus
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 39, 032204 (2021)
https://doi.org/10.1116/6.0000980
Published: April 2021
View article titled, Fully vertical gallium nitride trench MOSFETs fabricated with metal-free gate first process
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Journal Articles

Neuromorphic computing: From devices to integrated circuits

Vishal Saxena
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 39, 010801 (2021)
https://doi.org/10.1116/6.0000591
Published: December 2020
View article titled, Neuromorphic computing: From devices to integrated circuits
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Journal Articles

Au-free low-temperature ohmic contacts for AlGaN/AlN/GaN heterostructures

Xiaowei Wang, Hsien-Chih Huang, Bruce Green, Xiang Gao, Daniel Rosenmann, Xiuling Li, Junxia Shi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 38, 062206 (2020)
https://doi.org/10.1116/6.0000287
Published: October 2020
View article titled, Au-free low-temperature ohmic contacts for AlGaN/AlN/GaN heterostructures
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Journal Articles

Impacts on access resistance of InP high electron mobility transistors from wafer processing

Rubin Ma, Jean Lapointe, Craig Storey, Philip Poole, Frank Jiang, Alireza Seyfollahi, Alexandre W. Walker, Jean-Paul Noël, Alicia Kam, Adam Densmore
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 38, 022212 (2020)
https://doi.org/10.1116/1.5140364
Published: March 2020
View article titled, Impacts on access resistance of InP high electron mobility transistors from wafer processing
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Journal Articles

Nanoscale etching of perovskite oxides for field effect transistor applications

Junao Cheng, Hao Yang, Caiyu Wang, Nick Combs, Chris Freeze, Omor Shoron, Wangzhou Wu, Nidhin Kurian Kalarickal, Hareesh Chandrasekar, Susanne Stemmer, Siddharth Rajan, Wu Lu
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 38, 012201 (2020)
https://doi.org/10.1116/1.5122667
Published: December 2019
View article titled, Nanoscale etching of perovskite oxides for field effect transistor applications
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Journal Articles

Investigation of impact of gate underlap/overlap on the analog/RF performance of composite channel double gate MOSFETs

J. Ajayan, D. Nirmal, Dheena Kurian, P. Mohankumar, L. Arivazhagan, A. S. Augustine Fletcher, T. D. Subash, M. Saravanan
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 37, 062201 (2019)
https://doi.org/10.1116/1.5116199
Published: October 2019
View article titled, Investigation of impact of gate underlap/overlap on the analog/RF performance of composite channel double gate MOSFETs
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Journal Articles

Degradation of AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors under off-state electrical stress

Liang Song, Kai Fu, Jie Zhao, Guohao Yu, Ronghui Hao, Yaming Fan, Yong Cai, Baoshun Zhang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 042201 (2018)
https://doi.org/10.1116/1.5023844
Published: June 2018
View article titled, Degradation of AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors under off-state electrical stress
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Journal Articles

Electrical and optical characteristics of gamma-ray irradiated AlGaN/GaN high electron mobility transistors

Editor’s Pick
Min P. Khanal, Burcu Ozden, Kyunghyuk Kim, Sunil Uprety, Vahid Mirkhani, Kosala Yapabandara, Ayayi C. Ahyi, Minseo Park
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 03D107 (2017)
https://doi.org/10.1116/1.4979976
Published: April 2017
View article titled, Electrical and optical characteristics of gamma-ray irradiated AlGaN/GaN high electron mobility transistors
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Journal Articles

Mapping of CMOS FET degradation in bias space—Application to dram peripheral devices

B. Kaczer, J. Franco, S. Tyaginov, M. Jech, G. Rzepa, T. Grasser, B. J. O'Sullivan, R. Ritzenhaler, T. Schram, A. Spessot, D. Linten, N. Horiguchi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 01A109 (2017)
https://doi.org/10.1116/1.4972872
Published: December 2016
View article titled, Mapping of CMOS FET degradation in bias space—Application to dram peripheral devices
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Journal Articles

Effects of various bias and temperature stresses on low-frequency noise properties of amorphous InGaZnO thin-film transistors

Hee-Joong Kim, Chan-Yong Jeong, Sang-Dae Bae, Hyuck-In Kwon
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 010601 (2017)
https://doi.org/10.1116/1.4972524
Published: December 2016
View article titled, Effects of various bias and temperature stresses on low-frequency noise properties of amorphous InGaZnO thin-film transistors
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Journal Articles

Electrical characterization of a gate-recessed AlGaN/GaN high-electron-mobility transistor with a p-GaN passivation layer

Kuang-Po Hsueh, Feng-Tso Chien, Li-Yi Peng, Chih-Wei Yang, Hou-Yu Wang, Kai-Di Mai, Hsien-Chin Chiu
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 061204 (2016)
https://doi.org/10.1116/1.4963897
Published: September 2016
View article titled, Electrical characterization of a gate-recessed AlGaN/GaN high-electron-mobility transistor with a p-GaN passivation layer
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Journal Articles

Effects of proton irradiation and thermal annealing on off-state step-stressed AlGaN/GaN high electron mobility transistors

Byung-Jae Kim, Shihyun Ahn, Fan Ren, Stephen J. Pearton, Gwangseok Yang, Jihyun Kim
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 041231 (2016)
https://doi.org/10.1116/1.4959028
Published: July 2016
View article titled, Effects of proton irradiation and thermal annealing on off-state step-stressed AlGaN/GaN high electron mobility transistors
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Journal Articles

Temperature-dependent electrical instability of p-type SnO thin-film transistors

Jeong-Hwan Lee, Yong-Jin Choi, Chan-Yong Jeong, Chang-Woo Lee, Hyuck-In Kwon
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 041210 (2016)
https://doi.org/10.1116/1.4949558
Published: May 2016
View article titled, Temperature-dependent electrical instability of p-type SnO thin-film transistors
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