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Journal Articles

New method of fabrication of suspended metallic single electron transistor (SET)

Mohammad Istiaque Rahaman, G. P. Szakmany, A. O. Orlov, G. L. Snider
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 013201 (2024)
https://doi.org/10.1116/6.0003025
Published: January 2024
View article titled, New method of fabrication of suspended metallic single electron transistor (SET)
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Journal Articles

Trap studies in silicon nanowire junctionless transistors using low-frequency noise

Noah Opondo, Sarath Ramadurgam, Chen Yang, Saeed Mohammadi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 011804 (2016)
https://doi.org/10.1116/1.4939787
Published: January 2016
View article titled, Trap studies in silicon nanowire junctionless transistors using low-frequency noise
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Journal Articles

Binary matrices of optimal autocorrelations as alignment marks

Scott A. Skirlo, Ling Lu, Marin Soljačić
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 021601 (2015)
https://doi.org/10.1116/1.4913316
Published: February 2015
View article titled, Binary matrices of optimal autocorrelations as alignment marks
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Journal Articles

Highly thermally stable in situ SiNX passivation AlGaN/GaN enhancement-mode high electron mobility transistors using TiW refractory gate structure

Hsien-Chin Chiu, Chao-Hung Chen, Chih-Wei Yang, Hsuan-Ling Kao, Fan-Hsiu Huang, Sheng-Wen Peng, Heng-Kuang Lin
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 31, 051212 (2013)
https://doi.org/10.1116/1.4821195
Published: September 2013
View article titled, Highly thermally stable <em>in situ</em> SiN<sub>X</sub> passivation AlGaN/GaN enhancement-mode high electron mobility transistors using TiW refractory gate structure
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Journal Articles

Characteristic comparison of AlGaN/GaN enhancement-mode HEMTs with CHF3 and CF4 surface treatment

C. H. Chen, C. W. Yang, H. C. Chiu, Jeffrey. S. Fu
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 30, 021201 (2012)
https://doi.org/10.1116/1.3680115
Published: February 2012
View article titled, Characteristic comparison of AlGaN/GaN enhancement-mode HEMTs with CHF<sub>3</sub> and CF<sub>4</sub> surface treatment
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Journal Articles

Recent trends in bias temperature instability

B. Kaczer, T. Grasser, J. Franco, M. Toledano-Luque, Ph. J. Roussel, M. Cho, E. Simoen, G. Groeseneken
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 01AB01 (2011)
https://doi.org/10.1116/1.3521505
Published: January 2011
View article titled, Recent trends in bias temperature instability
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Journal Articles

Noise analysis of carbon nanotube field effect transistors irradiated by electron beam

Jack Chan, Deborah Kidd, Brian Burke, Lloyd Harriott, Keith Williams
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, C6P66–C6P69 (2010)
https://doi.org/10.1116/1.3517517
Published: December 2010
View article titled, Noise analysis of carbon nanotube field effect transistors irradiated by electron beam
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Journal Articles

dc and low frequency noise analysis of Fowler–Nordheim stress of n -channel metal-oxide semiconductor field-effect transistors processed in a 65 nm technology

J. Armand, F. Martinez, P. Benoit, M. Valenza, E. Vincent, V. Huard, K. Rochereau
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 1129–1131 (2009)
https://doi.org/10.1116/1.3130166
Published: May 2009
View article titled, dc and low frequency noise analysis of Fowler–Nordheim stress of n -channel metal-oxide semiconductor field-effect transistors processed in a 65 nm technology
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Journal Articles

Low frequency noise analysis in Hf O 2 ∕ Si O 2 gate oxide fully depleted silicon on insulator transistors

L. Zafari, J. Jomaah, G. Ghibaudo, O. Faynot
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 402–405 (2009)
https://doi.org/10.1116/1.3072518
Published: February 2009
View article titled, Low frequency noise analysis in Hf O 2 ∕ Si O 2 gate oxide fully depleted silicon on insulator transistors
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Journal Articles

Different mechanism to explain the 1 ∕ f noise in n - and p -SOI-MOS transistors fabricated on (110) and (100) silicon-oriented wafers

Philippe Gaubert, Akinobu Teramoto, Weitao Cheng, Tatsufumi Hamada, Tadahiro Ohmi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 394–401 (2009)
https://doi.org/10.1116/1.3054280
Published: February 2009
View article titled, Different mechanism to explain the 1 ∕ f noise in n - and p -SOI-MOS transistors fabricated on (110) and (100) silicon-oriented wafers
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Journal Articles

Hot-carrier effects on the scattering parameters of lightly doped drain n -type metal–oxide–semiconductor field effect transistors

W. S. Kwan, M. J. Deen
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 16, 628–632 (1998)
https://doi.org/10.1116/1.589873
Published: March 1998
View article titled, Hot-carrier effects on the scattering parameters of lightly doped drain n -type metal–oxide–semiconductor field effect transistors
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Journal Articles

Planar‐processed tungsten and polysilicon vacuum microelectronic devices with integral cavity sealing

Q. Mei, T. Tamagawa, C. Ye, Y. Lin, S. Zurn, D. L. Polla
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 11, 493–496 (1993)
https://doi.org/10.1116/1.586848
Published: March 1993
View article titled, Planar‐processed tungsten and polysilicon vacuum microelectronic devices with integral cavity sealing
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Journal Articles

Fabrication techniques for nanometer scale resistors: A poor man’s nanolithography

G. A. Garfunkel, M. B. Weissman
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 8, 1087–1092 (1990)
https://doi.org/10.1116/1.584921
Published: September 1990
View article titled, Fabrication techniques for nanometer scale resistors: A poor man’s nanolithography
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